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At least 307 records · Page 17

Spin transport of a doped Mott insulator in moiré heterostructures

Moiré superlattices of semiconducting transition metal dichalcogenide heterobilayers are model systems for investigating strongly correlated electronic phenomena. Specifically, WSe 2 /WS 2 moiré superlattices have emerged as a quantum simulator for the two-dimensional extended Hubbard model. Experimental studies of charge transport have revealed correlated Mott insulator and generalized Wigner crystal states, but spin transport of the moiré heterostructure has not yet been sufficiently explored. Here, we use spatially and temporally resolved circular dichroism spectroscopy to directly image the spin transport as a function of carrier doping and temperature in WSe 2 /WS 2 moiré heterostructures. We observe diffusive spin transport at all hole concentrations at 11 Kelvin — including the Mott insulator at one hole per moiré unit cell — where charge transport is strongly suppressed. At elevated temperatures the spin diffusion constant remains unchanged in the Mott insulator state, but it increases significantly at finite doping away from the Mott state. The doping- and temperature-dependent spin transport can be qualitatively understood using a t–J model, where spins can move via the hopping of spin-carrying charges and via the exchange interaction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Impurity-enhanced core valence luminescence via Zn-doping in cesium magnesium chlorides

Scintillators with faster timing capabilities are currently in high demand for use in radiation detection systems in the fields of nuclear and medical physics. The limited number of suitable materials that meet the performance criteria of next generation detection systems presents an opportunity for discovery of new fast scintillator materials. In this work, the effects of doping several ultrafast core-valence luminescent (CVL) scintillators with divalent Zn is explored. Three compounds are investigated – CsMgCl 3 , Cs 2 MgCl 4 , and Cs 3 MgCl 5 – and single crystals of each doped with 5 mol% Zn are grown via the Bridgman method. Additionally, mixing across the full range of concentrations (from 0 % to 100 % Zn) is explored in the Cs 2 Mg 1-x Zn x Cl 4 and Cs 3 Mg 1-x Zn x Cl 5 systems. For low concentrations of Zn, light yields of all three compounds are enhanced (by up to ~60 %) compared to the pure crystals, achieving what we believe to be the brightest known CVL, CsMgCl 3 :Zn 5 % (3400 ± 170 ph/MeV light yield). More importantly, Zn doping does not affect the ultrafast timing properties, with each composition maintaining a single-component decay time around 1–3 ns. A sub-100 ps coincidence time resolution (CTR) is also achieved with CsMgCl 3 :Zn 5 %. The results of this work reveal a new avenue towards obtaining brighter CVL materials, which could open up possibilities for more advanced ultrafast scintillators to be discovered moving forward.

36 MATERIALS SCIENCE↗

Temporal and spatial tuning of optical constants in praseodymium doped ceria by electrochemical means

Abstract Temporal and spatial tuning of the refractive index of optical thin films is desired for flat optics applications. The redistribution of mobile ions in mixed ionic-electronic conductors (MIEC) has been demonstrated to serve as a viable means for achieving optical tuning down to the nanoscale. Here we studied the dynamic range of the optical tuning achievable in the refractive index, in the MIEC oxide – Pr x Ce 1− x O 2− δ (PCO), for x = 0.1, 0.2 and 0.4, at 500 °C, by in-situ spectrophotometry. Significant increases in the modulation of both the imaginary and real optical constants in the visible and the adjacent spectra were obtained for increased doping levels. Device employing an electrochemical titration method was implemented to modulate the oxygen concentration, and thereby the optical transmission of PCO. Incorporation of a patterned top electrode allowed for the demonstration of spatial control of PCO thin film properties by in-situ video imaging of the optical switching process. The electrochemically induced optical state is shown to remain non-volatile upon quenching the device to room temperature under applied bias.

36 MATERIALS SCIENCE↗

Electronic Trap-State Modulation in Sm-Doped SnO 2 Nanofibers Enables Ultrasensitive Hydrogen Sensing

The demand for sub-ppm hydrogen (H 2 ) sensing is growing across emerging applications such as environmental monitoring, breath-based disease diagnostics, and early-stage battery failure detection. However, achieving reliable ppb-level detection with chemiresistive metal oxide sensors remains challenging. At trace gas concentrations, resistance modulation is often insufficient, particularly in the absence of noble metal catalysts. Here, we report samarium-doped tin dioxide (Sm-SnO 2 ) nanofibers in which electronic trap-state modulation is exploited to enable ultrasensitive hydrogen sensing. The 2 at% Sm-doped SnO 2 nanofibers exhibited markedly enhanced H 2 sensitivity, achieving clear detection down to 25 ppb H 2 at 200 °C, with a theoretical limit of detection of 4.5 ppb, placing this material among the most sensitive noble-metal-free SnO 2 -based H 2 sensors reported to date. Mechanistic investigations through X-ray photoelectron spectroscopy and electron energy loss spectroscopy revealed that Sm 3+ doping introduces deep trap states associated with charge-compensating defect complexes. These states reduce free carrier density, increase baseline resistance, and enable trap-assisted charge release during H 2 exposure, thereby amplifying the sensing response. Trap-state engineering via rare-earth doping, exemplified by Sm-SnO 2 , provides an effective pathway for achieving ppb-level hydrogen detection in noble-metal-free chemiresistive sensors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Selective thermal neutron transmutation doping with Gd masks in GaN semiconductors

For the first time, selective neutron transmutation doping was successfully performed on GaN through Gd masks, showing the feasibility of patternable doping through neutron irradiations. In collaborating with Oak Ridge National Laboratory, GaN with Gd masks was irradiated by directional neutrons. By using the Gd properties with high neutron absorption cross-sections, it was confirmed that the area covered by Gd masks on GaN was completely shielded from neutrons, and the uncovered area was doped with the generated Ge and 14 C. Property differences were clearly identified in various ways when comparing the area exposed by neutrons and the area unexposed by neutrons. The discoloration by the ejected protons and elastic scattering of neutrons appeared only in the exposed area while the unexposed area remained the same as before irradiation. The aspect ratio of the patterned profile of GaN was estimated by comparing patterns on the front and backside. From energy dispersive X-ray spectroscopy spectra and secondary ion mass spectrometry measurement, the concentration difference between Ge and 14 C as well as the exact concentration of produced 14 C was also checked. Further, Schottky barrier diodes on the selectively doped GaN were fabricated and investigated to study the electrical properties.

42 ENGINEERING↗

Role of Alkali-Metal Cations in Electronic Structure and Halide Segregation of Hybrid Perovskites

The ability to control or prevent phase segregation in perovskites is crucial to realizing stable and tunable mixed-halide optoelectronic devices. Here, we systematically examine the impact of alkali-metal-cation (Cs + and K + ) concentration on the band structure, chemical composition, phase segregation, and polycrystalline microstructure on formamidinium-dominated mixed-halide mixed-cation perovskite films. It was found that the incorporation of Cs + and K + cations decreases the work function and the core levels of all components shift toward higher binding energy consistent with n-doping the perovskite film, which facilitates electron transfer to the electron transport layer TiO 2 . A concentration-dependent film structure was observed by X-ray photoemission spectroscopy and grazing incidence wide-angle X-ray scattering where the halides and cations are distributed evenly across perovskite films at low metallic cation concentration (5%). A high metal-cation ratio (20%) leads to halide segregation within the perovskite film and the surface becomes bromide-poor, whereas the bromide and metal cations diffuse more deeply within the film. These differences in electronic properties, element distribution, and film morphology were reflected in the device performance where the power conversion efficiency of low-metallic-cation concentration (5% of Cs + and K + ) perovskite solar cells is ≈5% higher than the high-concentration ones (20%). This study provides valuable chemical and physical insight into the underlying trade-offs in the careful tuning of electrical properties and film structure to optimize multication and mixed-halide hybrid perovskites.

36 MATERIALS SCIENCE↗

Electro-assisted regeneration of pH-sensitive ion exchangers for sustainable phosphate removal and recovery

Removal and recovery of phosphate from wastewater can minimize deleterious environmental impacts and supplement fertilizer supply. Hybrid anion exchangers (HAIX, with doped ferric oxide nanoparticles (FeOnp)) can remove phosphate from complex wastewaters and recover concentrated phosphate solutions. Here, we integrate HAIX with a weak acid cation exchanger (WAC) to enrich phosphate and calcium in mild regenerants and precipitate both elements for recovery. We demonstrated an electro-assisted regeneration approach to avoid strong acid and base input. Based on demonstrated pH sensitivities of both materials, electrochemically produced mild electrolytes (pH 3 and pH 11), which are 100–1000 times less concentrated than typical regenerants, preserved 80% WAC and 50% HAIX capacities over five batch adsorption-regeneration cycles. FeOnp in HAIX facilitated regeneration due to pH sensitivity and their likely distribution on the resin particle surface, which reduced intraparticle diffusion path length. In column tests, repeatable phosphate removal (> 95%) from synthetic wastewater (3 mg P/L) was achieved with 20 kWh/kg P specific energy consumption. After removal, a similar 50% HAIX regeneration efficiency as batch experiments was achieved. In spent regenerant, more than 95% phosphorus was recovered as hydroxyapatite. This novel approach enhances ion exchange by minimizing chemical inputs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrochemical Oxidation of Metal–Catechol Complexes as a New Synthesis Route to the High-Quality Ternary Photoelectrodes: A Case Study of Fe 2 TiO 5 Photoanodes

A new electrochemical, solution-based synthesis method to prepare uniform multinary oxide photoelectrodes was developed. This method involves solubilizing multiple metal ions as metal-catechol complexes in a pH condition where they are otherwise insoluble. When some of the catechol ligands are electrochemically oxidized, the remaining metal complexes become insoluble and are deposited as metal-catechol films on the working electrode. The resulting films are then annealed to form crystalline multinary oxide electrodes. Since catechol can serve as a complexing agent for a variety of metal ions, the newly developed method can be used to prepare a variety of multinary oxide films. In the present study, we used this method to prepare n-type Fe 2 TiO 5 photoanodes and investigated their photoelectrochemical properties for use in a photoelectrochemical water splitting cell. We also performed a computational investigation with two goals. The first goal was to investigate small electron polaron formation in Fe 2 TiO 5 . Charge transport in most oxide photoelectrodes involves small polaron hopping, but small polaron formation in Fe 2 TiO 5 has not been examined prior to this work. The second goal was to investigate the effect of substitutional Sn doping at the Fe site on the electronic band structure and the carrier concentration of Fe 2 TiO 5 . Here, the combined experimental and theoretical results presented in this study greatly improve our understanding of Fe 2 TiO 5 for use as a photoanode.

14 SOLAR ENERGY↗

Evolution of the structural transition in Mo 1–x W x Te 2

The composition dependence of the structural transition between the monoclinic 1T' and orthorhombic Td phases in the Mo 1–x W x Te 2 Weyl semimetal was investigated by elastic neutron scattering on single crystals up to x ≈ 0.54. First observed in MoTe 2 , the transition from T d to 1T' is accompanied by an intermediate pseudo-orthorhombic phase, T d *. Upon doping with W, the T d * phase vanishes by x ≈ 0.34. Above this concentration, a phase coexistence behavior with both T d and 1T' is observed instead. The interlayer in-plane positioning parameter δ, which relates to the 1T' β angle, decreases with temperature as well as with W substitution, likely due to strong anharmonicity in the interlayer interactions. As a result, the temperature width of the phase coexistence remains almost constant up to x ≈ 0.54, in contrast to the broadening reported under pressure.

36 MATERIALS SCIENCE↗

Diesel Particulate Filter Durability Performance Comparison Using Metals Doped B20 vs. Conventional Diesel Part II: Chemical and Microscopic Characterization of Aged DPFs

This project's objective was to generate experimental data to evaluate the impact of metals doped B20 on diesel particle filter (DPF) ash loading and performance compared to that of conventional petrodiesel. The effect of metals doped B20 vs. conventional diesel on a DPF was quantified in a laboratory controlled accelerated ash loading study. The ash loading was conducted on two DPFs - one using ULSD fuel and the other on B20 containing metals dopants equivalent to 4 ppm B100 total metals. Engine oil consumption and B20 metals levels were accelerated by a factor of 5, with DPFs loaded to 30 g/L of ash. Details of the ash loading experiment and on-engine DPF performance evaluations are presented in the companion paper (Part I). The DPFs were cleaned, and ash samples were taken from the cleaned material. X-ray Fluorescence (XRF), X-Ray Photoelectron Spectroscopy (XPS) and X-Ray Diffraction (XRD) were conducted on the ash samples. Core samples were taken from the cleaned DPF and were subjected to scanning electron microscope energy dispersive x-ray spectroscopy (SEM-EDS) and XRF analysis. A comparison of the data from the two DPFs is presented. The XRD and XPS analysis showed that the compounds present in the ash from the two DPFs were nearly identical, though differing in concentrations. CaSO4 was the biggest component of the ash from both DPFs. The metals doped B20 fuel resulted in ash with similar characteristics to that deposited by the lube oil and did not appear to have any deleterious physical effects on the DPF substrate (did not penetrate the substrate).

ADVANCED PROPULSION SYSTEMS,BIOMASS FUELS↗

Quantitative Infrared-to-Terahertz Nanospectroscopy of Semiconductors

Semiconductor technology now employs few-nanometer features, necessitating tools probing electronic properties on the same length scale. While the concentration of free charge carriers is routinely measured, the scattering rate remains challenging to access at the nanoscale. Here, we present ultrabroadband (5–50 THz) synchrotron infrared nanospectroscopy as a quantitative metrology tool for semiconductors. This technique can determine both the charge carrier concentration and scattering rate with percent-level accuracy, and it is inherently capable of ∼10 nm spatial resolution. We study silicon with different doping levels and confirm the method’s accuracy by statistical analysis and comparison with established far-field infrared spectroscopy. Near-field measurements systematically reveal charge-carrier concentrations ∼30% lower than far-field values, consistent with increased surface sensitivity and surface depletion. Our work establishes synchrotron infrared nanospectroscopy as a precise tool for quantitative nanoscale semiconductor characterization and paves the way toward all-optical characterization of surface depletion effects.

36 MATERIALS SCIENCE↗

Arsenic activation and compensation in single crystal CdTe bilayers

In state-of-the art polycrystalline CdTe photovoltaics, group-V dopant activation is about 2%. Low activation can create electronic defects and lead to recombination and band tail losses. To develop methods to overcome this limitation, dopant activation was systematically investigated using molecular beam epitaxy (MBE) grown single crystal bilayers of As-doped CdTe on undoped CdTe. Results suggest multiple paths for improved As-activation in polycrystalline CdTe-based devices. It was found that the carrier concentration in this MBE material saturated at ∼3 × 1016 cm−3, with high levels (>50%) of As-activation possible. High activation could be achieved with a post-growth activation temperature of ∼450 °C, when the initial doping level was below the saturation level. However, at typical polycrystalline As incorporation levels (>5 × 1016 cm−3), the excess As is inactive or compensating, requiring elevated temperatures (500–600 °C) to achieve high activation. Oxygen in the annealing ambient was detrimental, while the effect of CdCl2 in the ambient is more case-dependent. A 575 °C activation anneal was combined with a 450 °C CdCl2 treatment to better understand the implications for polycrystalline CdTe. Interestingly, on highly doped samples, processes ending with a high temperature step displayed high activation, while those ending at 450 °C significantly reduced the carrier concentration (with or without CdCl2 in the ambient). Low activation can be restored with another high temperature anneal, allowing reproducible toggling between high and low activation based on the final temperature. Photoluminescence revealed the presence of donor–acceptor pairs in the low activation state that appear to be associated with a compensating defect.

14 SOLAR ENERGY↗

Broad-range tuning of ferroelectric switching of La x Bi 1−x FeO 3 epitaxial films via digital doping using off-axis co-sputtering

To investigate the scope of ferroelectric behavior in La-substituted BiFeO 3 films, La x Bi 1−x FeO 3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO 3 (001) and DyScO 3 (110) substrates with a SrRuO 3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi 1−x FeO 3 films across a wide range of x = 0.05–0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x ≥ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi 1−x FeO 3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Facet-Dependent Doping and Dopant-Dependent Faceting in Si-Doped GaAsSb Nanowires

Here, we correlate the spatial distributions of Si, Sb, and rotational twins in Si-doped GaAs 1-x Sb x nanowires. GaAs 1-x Sb x nanowires were grown epitaxially on Si(111) substrates by tuning process conditions to achieve repeated nucleation of rotational twins and growth along the [111]B direction; dilute Sb and Si fluxes were chosen to create a sufficient twin density to achieve high yield while avoiding growth of the wurtzite phase. While the impact of Si and Sb on twin density and nanowire growth rate has been previously reported, the facet-dependent incorporation of these species has not been established. Scanning transmission electron microscopy was used to confirm that Sb incorporates preferentially on the (111)B facets relative to {1 ̅1 ̅0} facets prior to nucleation of a rotational twin. With periodic twinning, this facet dependence leads to alternating regions of enriched and depleted Sb concentration attributed to a growth rate-dependent Sb-As-exchange mechanism. Atom probe tomography measurements establish that while Si doping is not perturbed by twinning on (111)B facets, Si and Sb concentrations are anti-correlated for growth on non-(111)B facets. Density functional theory calculations underpin a thermodynamic model that explains the observed anisotropies in dopant incorporation.

36 MATERIALS SCIENCE↗

SCGSR Final Report

Dual phase noble liquid time projection chambers (TPCs) have an unprecedented sensitivity towards dark matter searches and neutrinos, owing to their ability to detect single electrons. When a particle deposits energy into one of these detectors, electrons are released and drifted into a gaseous region of high electric field. In the gas, the electrons are accelerated to produce extra light into what is called an S2 pulse. This light is far easier to detect than the current induced from a single electron. The two widely used elements for noble liquid detectors are Xe and Ar. Xe has a larger chance of being hit by neutrinos or dark matter, but ends with a lower (i.e. harder to detect) energy when struck. However, Ar light is hard to reflect and detect due to its short wavelength which is absorbed by most materials. While one may use TPB to re-emit this light at a longer wavelength, spatial variations of TPB thickness can smear the amount of re-emitted light, and thus cause a poor S2 energy resolution and spatial resolution. Furthermore, a single electron pulse in Ar is spread over a much longer time than one in Xe, which makes it harder to identify single electrons in Ar. The goal of Xe doping is to combine the best aspects of Ar with the best aspects of Xe. More specifically, this means a detector with a larger yield of photons and electrons produced per energy deposition, an ability to collect more of the light given by those signals, and a narrower pulse from the electron signal. During this project, we developed and operated a detector that can overcome the thermodynamic challenges of Xe doping – namely, preventing Xe from freezing. In the first experimental run during this award period, we found that we can achieve at least 5% of Xe in LAr, and measure the Xe concentration in the gas. In the second run, we installed our detector and saw the first S2 pulses in a dual phase Xe doped LAr TPC. With the data we took, we quantified the effect of Xe doping on the detectability of wavelength-shifted light produced in a Xe doped Ar mixture, as well as the single electron pulse shape. While the Ar light has successfully been wavelength shifted, we learned that much to our surprise, Xe doping actually makes the S2 pulse wider before it makes it narrower.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Bandgap recovery of monolayer MoS 2 using defect engineering and chemical doping

Two-dimensional transition metal dichalcogenide materials have created avenues for exciting physics with unique electronic and photonic applications. Among these materials, molybdenum disulfide is the most known due to extensive research in understanding its electronic and optical properties. In this paper, we report on the successful growth and modification of monolayer MoS 2 (1L MoS 2 ) by controlling carrier concentration and manipulating bandgap in order to improve the efficiency of light emission. Atomic size MoS 2 vacancies were created using a Helium Ion Microscope, then the defect sites were doped with 2,3,5,6-tetrafluro7,7,8,8-tetracyanoquinodimethane (F4TCNQ). The carrier concentration in intrinsic (as-grown) and engineered 1L MoS 2 was calculated using Mass Action model. The results are in a good agreement with Raman and photoluminescence spectroscopy as well as Kelvin probe force microscopy characterizations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Charge doping effects on magnetic properties of single-crystal La 1-x Sr x (Cr 0.2 Mn 0.2 Fe 0.2 Co 0.2 Ni 0.2 )O 3 (0 ≤ x ≤ 0.5) high-entropy perovskite oxides

The observed influence of hole doping on magnetic properties is mapped for the compositionally complex high-entropy oxide ABO 3 perovskite La 1-x Sr x (Cr 0.2 Mn 0.2 Fe 0.2 Co 0.2 Ni 0.2 )O 3 (0 ≤ x ≤ 0.5). It is found that aliovalent A -site substitution is a viable means to manipulate the magnetically active B -site sublattice. A series of single-crystal films are synthesized and show a general trend toward stronger ferromagnetic response and a shift in magnetic anisotropy as the Sr concentration increases. Magnetometry demonstrates complex and nonuniform responses similar to rigid and uncoupled composites at intermediate dopings. This behavior points to the presence of locally inhomogeneous magnetic phase competition, where ferromagnetic and antiferromagnetic magnetic contributions create a frustrated matrix containing uncompensated spins at the boundaries between these regions. The observations are discussed in the context of known responses to hole doping in the less complex ternary LaT M O 3 (T M =Cr,Mn,Fe,Co,Ni) oxides, and they are found to be different from a simple sum of the doped parents. The results are summarized in a preliminary magnetic phase diagram.

36 MATERIALS SCIENCE↗

Thermodynamic properties and enhancement of diamagnetism in nitrogen doped lutetium hydride synthesized at high pressure

Nitrogen doped lutetium hydride has drawn global attention in the pursuit of room-temperature superconductivity near ambient pressure and temperature. However, variable synthesis techniques and uncertainty surrounding nitrogen concentration have contributed to extensive debate within the scientific community about this material and its properties. We used a solid-state approach to synthesize nitrogen doped lutetium hydride at high pressure and temperature (HPT) and analyzed the residual starting materials to determine its nitrogen content. High temperature oxide melt solution calorimetry determined the formation enthalpy of LuH 1.96 N 0.02 (LHN) from LuH 2 and LuN to be −28.4 ± 11.4 kJ/mol. Magnetic measurements indicated diamagnetism which increased with nitrogen content. Ambient pressure conductivity measurements observed metallic behavior from 5 to 350 K, and the constant and parabolic magnetoresistance changed with increasing temperature. High pressure conductivity measurements revealed that LHN does not exhibit superconductivity up to 26.6 GPa. We compressed LHN in a diamond anvil cell to 13.7 GPa and measured the Raman signal at each step, with no evidence of any phase transition. Despite the absence of superconductivity, a color change from blue to purple to red was observed with increasing pressure. Thus, our findings confirm the thermodynamic stability of LHN, do not support superconductivity, and provide insights into the origins of its diamagnetism.

Science & Technology - Other Topics↗