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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Quality assurance and quality control of the $26~\text {m}^2$ SiPM production for the DarkSide-20k dark matter experiment

DarkSide-20k is a novel liquid argon dark matter detector currently under construction at the Laboratori Nazionali del Gran Sasso (LNGS) of the Istituto Nazionale di Fisica Nucleare (INFN) that will push the sensitivity for Weakly Interacting Massive Particle (WIMP) detection into the neutrino fog. The core of the apparatus is a dual-phase Time Projection Chamber (TPC), filled with 50 tonnes of low radioactivity underground argon (UAr) acting as the WIMP target. NUV-HD-cryo Silicon Photomultipliers (SiPM)s designed by Fondazione Bruno Kessler (FBK) (Trento, Italy) were selected as the photon sensors covering two $10.5~\text {m}^2$ Optical Planes, one at each end of the TPC, and a total of $5~\text {m}^2$ photosensitive surface for the liquid argon veto detectors. This paper describes the Quality Assurance and Quality Control (QA/QC) plan and procedures accompanying the production of FBK NUV-HD-cryo SiPM wafers manufactured by LFoundry s.r.l. (Avezzano, AQ, Italy). SiPM characteristics are measured at 77 K at the wafer level with a custom-designed probe station. As of March 2025, 1314 of the 1400 production wafers (94% of the total) for DarkSide-20k were tested. The wafer yield is $93.2\pm 2.5$%, which exceeds the 80% specification defined in the original DarkSide-20k production plan.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV - ) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV - -based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodolumines cence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV - emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV - emitters and that grain boundaries impact SiV - emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Unraveling the intrinsic atomic physics behind x-ray absorption line shifts in warm dense silicon plasmas

Here, we present a novel free-energy density functional theory (DFT)-based methodology for optical property calculations of warm dense matter to cover a wide range of thermodynamic conditions and photon energies including the entire x-ray range. It uses Mermin–Kohn–Sham density functional theory with exchange-correlation (XC) thermal effects taken into account via a fully temperature dependent generalized gradient approximation XC functional. The methodology incorporates a combination of the ab initio molecular dynamics (AIMD) snapshotted Kubo–Greenwood optic data with a single-atom in simulation cell calculations to close the photon energy gap between the L and K edges and extend the K-edge tail toward many-keV photon energies. This gap arises in the standard scheme due to a prohibitively large number of bands required for the Kubo–Greenwood calculations with AIMD snapshots. Kubo–Greenwood data on snapshots provide an accurate description of optic properties at low photon frequencies slightly beyond the L-edge and x-ray absorption near edges structure (XANES) spectra, while data from periodic calculations with single atoms cover the tail regions beyond the edges. To demonstrate its applicability to mid-Z materials where the standard DFT-based approach is not computationally feasible, we have applied it to opacity calculations of warm dense silicon plasmas. These first-principles calculations revealed a very interesting phenomon of red-to-blue shift in K–L (1s → 2p) and K-edge absorptions along both isotherm and isochore, which are absent in most continuum-lowering models of traditional plasma physics. This new physics phenomenon can be attributed to the underlying competition between the screening of deeply bound core electrons and the screening of outer-shell electrons caused by warm-dense-plasma conditions. We further demonstrate that the ratio of 1s → 2p to the K-edge x-ray absorptions can be used to characterize warm-dense-plasma conditions. Eventually, based on our absorption calculations, we have established a first-principles opacity table (FPOT) for silicon in a wide range of material densities and temperatures.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Förster Resonance Energy Transfer and Enhanced Emission in Cs 4 PbBr 6 Nanocrystals Encapsulated in Silicon Nano-Sheets for Perovskite Light Emitting Diode Applications

Encapsulating Cs 4 PbBr 6 quantum dots in silicon nano-sheets not only stabilizes the halide perovskite, but also takes advantage of the nano-sheet for a compatible integration with the traditional silicon semiconductor. Here, we report the preparation of un-passivated Cs 4 PbBr 6 ellipsoidal nanocrystals and pseudo-spherical quantum dots in silicon nano-sheets and their enhanced photoluminescence (PL). For a sample with low concentrations of quantum dots in silicon nano-sheets, the emission from Cs 4 PbBr 6 pseudo-spherical quantum dots is quenched and is dominated with Pb 2+ ion/silicene emission, which is very stable during the whole measurement period. For a high concentration of Cs 4 PbBr 6 ellipsoidal nanocrystals in silicon nano-sheets, we have observed Förster resonance energy transfer with up to 87% efficiency through the oscillation of two PL peaks when UV excitation switches between on and off, using recorded video and PL lifetime measurements. In an area of a non-uniform sample containing both ellipsoidal nanocrystals and pseudo-spherical quantum dots, where Pb 2+ ion/silicene emissions, broadband emissions from quantum dots, and bandgap edge emissions (515 nm) appear, the 515 nm peak intensity increases five times over 30 min of UV excitation, probably due to a photon recycling effect. This irradiated sample has been stable for one year of ambient storage. Cs 4 PbBr 6 quantum dots encapsulated in silicon nano-sheets can lead to applications of halide perovskite light emitting diodes (PeLEDs) and integration with traditional semiconductor materials.

36 MATERIALS SCIENCE↗
DOE OSTI2026

SEARCHING FOR MESONIC DARK MATTER WITH THE HEAVY PHOTON SEARCH EXPERIMENT

Several highly-sensitive astrophysical experiments over the past couple of decades have demonstrated that the current abundance of visible Standard Model matter cannot explain galactic rotation curves, the expansion history of the Universe, or the apparent warping of light in empty space. Instead, one finds strong agreement with this body of experimental results upon positing the existence of an invisible particulate field, dark matter. Namely, a cold, weakly interacting dark matter component can explain all these phenomena. A number of accelerator-based experiments have been developed to search for the weak couplings/interactions of these particles, many of them concentrating on particle models with masses of tens to thousands of GeV. A relatively new, well-motivated model is a dark sector coupled to the Standard Model via a dark photon. The current abundance of dark matter can be obtained if one assumes that dark matter is coupled to light by a MeV to GeV particle with a U(1) symmetry. The parameter space of these models remains largely unexplored because they are difficult to probe experimentally. In this thesis, I analyze data from the Heavy Photon Search (HPS) detector, whose two detector halves closely surround the electron beam, providing acceptance to far-forward boosted interactions. This forward acceptance to highly boosted particles yields unprecedented sensitivity to MeV-scale invariant masses. I exhaustively optimize the offline reconstruction of the HPS detector. Each reconstruction object, from Silicon Vertex Tracker hits to tracks, is studied to maximize acceptance of dark matter events. I then use the 2021 run data to search for one model of dark-photon-mediated matter, the Strongly Interacting Massive Particle (SIMP). SIMP models provide self-interacting dark matter candidates that can form bound states resembling dark mesons. HPS can detect SIMPs through the decay of a dark vector boson (either a dark ¿ or ¿) into e+e- pairs. I obtain exclusion contours for SIMPs using both an optimized cuts-based selection and a machine-learning-based selection, advancing our knowledge of the nature of dark matter.

O'Dwyer, Rory [Stanford Univ., CA (United States).↗
DOE OSTI2020

Exceptional coupling in photonic anisotropic metamaterials for extremely low waveguide crosstalk

Electromagnetic coupling is ubiquitous in photonic systems and transfers optical signals from one device to the other, creating crosstalk between devices. While this allows the functionality of some photonic components such as couplers, it limits the integration density of photonic chips, and many approaches have been proposed to reduce the crosstalk. However, due to the wave nature of light, complete elimination of crosstalk between closely spaced, identical waveguides is believed to be impossible and has not been observed experimentally. Here we show an exceptional coupling that can completely suppresses the crosstalk utilizing highly anisotropic photonic metamaterials. The anisotropic dielectric perturbations in the metamaterial mutually cancel the couplings from different field components, resulting in an infinitely long coupling length. We demonstrate the extreme suppression of crosstalk via exceptional coupling on a silicon-on-insulator platform, which is compatible with a complementary metal-oxide-semiconductor process. The idea of exceptional coupling with anisotropic metamaterials can be applied to many other electromagnetic devices, and it could drastically increase the integration density of photonic chips.

Mia, Md Borhan (ORCID:0000000320851331)↗
DOE OSTI2023

Realization of a wide steering end-fire facet optical phased array using silicon rich silicon nitride

The design, fabrication, and characterization of a 16-element optical phased array (OPA) using a high index (n = 3.1) silicon-rich silicon nitride (SRN) is demonstrated. Here, we present one-dimensional beam steering with end-fire facet antennas over a wide steering range of >115° at a fixed wavelength of 1525 nm. A beam width of 6.3° has been measured at boresight, consistent with theory. We demonstrate SRN as a viable material choice for chip-scale OPA applications due to its high thermo-optic coefficient, high optical power handling capacity [negligible two-photon absorption (TPA)], wide transparency window, and CMOS compatibility.

Nejadriahi, Hani↗
DOE OSTI2021

Beamline Spectroscopy of Integrated Circuits With Hard X-Ray Transition Edge Sensors at the Advanced Photon Source

At Argonne National Laboratory, we are developing hard X-ray (2 to 20 keV) Transition Edge Sensor (TES) arrays for beamline science. The significantly improved energy resolution provided by superconducting detectors compared to semiconductor-based energy-dispersive detectors, but with better collection efficiency than wavelength-dispersive instruments, will enable greatly improved X-ray emission and absorption spectroscopic measurements. Additionally, a prototype instrument with 24 microwave-frequency multiplexed pixels is now in testing at the Advanced Photon Source (APS) 1-BM beamline. Initial measurements show an energy resolution ten times better (150 eV compared to < 15 eV) than the silicon-drift detectors currently available to APS beamline users, and in particular demonstrate the ability to resolve closely-spaced emission lines in samples containing multiple transition metal elements, such as integrated circuits. Comparing fluorescence spectra of integrated circuits measured with our TESs at the beamline to those measured with silicon detectors, we find emission lines and elements largely hidden (e.g. Hf alongside Cu) from a semiconductor-based detector but well resolved by a TES. This directly shows the strengths of TES-based instruments in fluorescence mapping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Revisiting the dark matter interpretation of excess rates in semiconductors

In light of recent results from low-threshold dark matter detectors, we revisit the possibility of a common dark matter origin for multiple excesses across numerous direct detection experiments, with a focus on the excess rates in semiconductor detectors. We explore the interpretation of the low-threshold calorimetric excess rates above 40 eV in the silicon SuperCDMS Cryogenic Phonon Detector and above 100 eV in the germanium EDELWEISS Surface detector as arising from a common but unknown origin, and demonstrate a compatible fit for the observed energy spectra in both experiments, which follow a power law of index α = 3.4 3 - 0.06 + 0.11 . Despite the intriguing scaling of the normalization of these two excess rates with approximately the square of the mass number A 2 , we argue that the possibility of common origin by dark matter scattering via nuclear recoils is strongly disfavored, even allowing for exotic condensed matter effects in an as-yet unmeasured kinematic regime, due to the unphysically large dark matter velocity required to give comparable rates in the different energy ranges of the silicon and germanium excesses. We also investigate the possibility of inelastic nuclear scattering by cosmic ray neutrons, solar neutrinos, and photons as the origin, and quantitatively disfavor all three based on known fluxes of particles.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Hybrid Tandem Photovoltaics

Tandem solar cell structures are the only strategy demonstrated to surpass the detailed balance efficiency limit of high-quality single-junction solar cells. To continue to improve the efficiencies of cost-effective terrestrial solar power, hybrid tandems of dissimilar subcells are being considered by many around the world, especially designs that incorporate silicon solar cells as a bottom subcell. In this project, we studied a wide variety of tandem design possibilities including those with three-terminal (3T) and four-terminal (4T) configurations. The use of 3T and 4T designs could be useful for efficient and economical hybrid tandem designs that utilize the best available subcell materials such as emerging perovskite materials. Three-terminal configurations, in particular, have not been sufficiently studied previously. We have laid the foundational groundwork in this project for understanding the operation of 3T tandems: developing a taxonomy for naming, a methodology for measuring and interconnecting, and models for simply characterizing 3T tandems. Electrical and optical subcell coupling between the subcells was also measured and modeled. An important part of this work was the fabrication of novel example tandem structures, including 4T GaAs/Si, 3T GaInP/Si, 3T GaAs/Si, and 3T GaInP/GaAs devices. Using these high-quality tandem cells, we have been able to clearly demonstrate the achievability of high-efficiencies, and subtle physical effects such as photon recycling and luminescent coupling. We have developed and demonstrated essential building-block tools such as transparent conductive adhesives (TCA) and 3T silicon bottom cells with interdigitated back contacts (IBC) that can also be used in many other tandem designs. We have tested the reliability of these tools and devices under standardized testing and outdoor measurements. We have found 4T GaAs/Si tandems to be relatively straightforward to fabricate and robust in real-world outdoor conditions. While we have demonstrated working hybrid 3T III-V/TCA/Si IBC tandems, we experienced low yields even with our best process flows yet. Further work is still needed to improve the processing yield of these devices. We therefore also created tandem cells using an all-III-V 3T tandem process which was very robust with high yields, allowing for the creation of voltage-matched strings in many different configurations using 8 nearly identical 3T tandems. Using these robust 3T tandem examples, we were able measure and precisely characterize 3T tandem behaviors to predict their operation under changing spectrum and temperature. The optoelectronic equivalent-circuit model was shown to be very general and applicable to hybrid tandems, and encompassed the operation 3T Si IBC cells. This general model has been distributed to the public in as open-source Python-based software called PVcircuit. We have calculated the implications of these new tandem device designs on the real-world energy production and shown how the relative performance of different tandem configurations is situational and can be engineered using the tools developed here.

14 SOLAR ENERGY↗
DOE OSTI2023

Multiport High-pressure Fluid Cell (MHPFC) for Photon and Electron Beams

A multiport high-pressure fluid cell was developed based on an engineered thin film membrane solution with a reinforced frame of boron-doped silicon, optimized to withstand better pressure with an increase of 17.6% in average burst pressure over similar membranes without frame. The novel cells (patent pending) have 8 microfluidic ports, two intra-cavity electrodes and two pressure sensors on a 8 mm x 8 mm Si chip. The prototypes resisted up to 60 bar with 50-nm-thick silicon nitride membranes of size 70 nm x 70 nm. The cells can be used for testing reactions in fluids in medium-high pressure (up to 300 bar) using X-rays (primary application), electron beams, IR or visible light. Improvements in the pressure sensing setup and customization for applications are supposed to follow.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector

The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. Here we present the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2026

Gepta-EX: a multi-channel germanium detector for X-ray absorption fine structure

Fluorescence-mode X-ray absorption spectroscopy (XAS) at high photon energies requires detectors with high stopping power and excellent energy resolution to measure weak element-specific signals. Traditional silicon-based detectors suffer from poor efficiency above ∼20 keV, while most high-Z materials such as cadmium telluride, cadmium zinc telluride, and gallium arsenide have focused predominantly on imaging applications with limited spectroscopic resolution. In contrast, germanium combines excellent stopping power with superior intrinsic energy resolution due to its low Fano factor and favorable charge transport properties, making it ideal for high-resolution spectroscopy in the 15 keV to 100 keV range. To address these requirements, we report on the development, fabrication, and performance evaluation of Gepta-EX, a compact multi-channel high-purity germanium (HPGe) detector system for fluorescence-mode XAS. The Gepta-EX system features a monolithic seven-channel HPGe pixel array integrated with low-noise CUBE charge-sensitive preamplifiers, housed within a thermally isolated compact cryostat operating near 90 K. The detector achieves energy resolutions of 218 eV at 5.9 keV (from a 55 Fe source) and 373 eV at 59.5 keV (from a 241 Am source), with uniform performance across all channels. By avoiding the escape peak interference commonly associated with silicon detectors and providing stable, high-resolution performance, Gepta-EX represents a powerful tool for high-energy X-ray spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A New Route to Quantum-Scale Structures through a Novel Enhanced Germanium Diffusion Mechanism

This project sought to develop a fundamental understanding of the mechanisms underlying a newly observed enhanced germanium (Ge) diffusion process in silicon germanium (SiGe) semiconductor nanostructures during thermal oxidation. Using a combination of oxidationdiffusion experiments, high resolution imaging, and theoretical modeling, a model for the enhanced Ge diffusion mechanism was proposed. Additionally, a nanofabrication approach utilizing this enhanced Ge diffusion mechanism was shown to be applicable to arbitrary 3D shapes, leading to the fabrication of stacked silicon quantum dots embedded in SiGe nanopillars. A new wet etch-based method for preparing 3D nanostructures for highresolution imaging free of obscuring material or damage was also developed. These results enable a new method for the controlled and scalable fabrication of on-chip silicon nanostructures with sub-10 nm dimensions needed for next generation microelectronics, including low energy electronics, quantum computing, sensors, and integrated photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Monolithic integration of optical waveguides with metal routing layers

A photonic integrated circuit and a method for its manufacture are provided. In an embodiment, an intermetal dielectric layer, for example, a silicon oxide layer, is contiguous between an upper metal layer and a lower metal layer on a substrate. One or more waveguides having top and bottom faces are formed in respective waveguide layers within the intermetal dielectric layer between the upper and lower metal layers. There is a distance of at least 600 nm from the upper metal layer to the top face of the uppermost of the several waveguides. There is a distance of at least 600 nm from the lower metal layer to the bottom face of the lowermost of the several waveguides. The waveguides are formed of silicon nitride for longer wavelengths and alumina for shorter wavelengths. These dimensions and materials are favorable for CMOS processing, among other things.

Gehl, Michael↗
DOE OSTI2020

Beating absorption in solid-state high harmonics

Since the new millennium coherent extreme ultra-violet and soft x-ray radiation has revolutionized the understanding of dynamical physical, chemical and biological systems at the electron’s natural timescale. Unfortunately, coherent laser-based upconversion of infrared photons to vacuum-ultraviolet and soft x-ray high-order harmonics in gaseous, liquid and solid targets is notoriously inefficient. In dense nonlinear media, the limiting factor is strong re-absorption of the generated high-energy photons. Here we overcome this limitation by generating high-order harmonics from a periodic array of thin one-dimensional crystalline silicon ridge waveguides. Adding vacuum gaps between the ridges avoids the high absorption loss of the bulk and results in a ~ 100-fold increase of the extraction depth. As the grating period is varied, each high harmonic shows a different and marked modulation, indicating their waveguiding in the vacuum slots with reduced absorption. Looking ahead, our results enable bright on-chip coherent short-wavelength sources and may extend the usable spectral range of traditional nonlinear crystals to their absorption windows. Potential applications include on-chip chemically-sensitive spectro-nanoscopy.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Multi-amplifier Sensing Charge-coupled Devices for Next Generation Spectroscopy

We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal, photon-limited imaging. The MAS CCD is designed to reach sub-electron readout noise by repeatedly measuring charge through a line of amplifiers during the serial transfer shifts. Using synchronized readout electronics based on the Dark Energy Spectroscopic Instrument CCD controller, we report a read noise of 1.03 e$^{−}$ rms pix$^{−1}$ at a speed of 26 μs pix$^{−1}$ with a single-sample readout scheme where charge in a pixel is measured only once for each output stage. At these operating parameters, we find the amplifier-to-amplifier charge transfer efficiency (ACTE) to be >0.9995 at low counts for all amplifiers but one for which the ACTE is 0.997. This charge transfer efficiency falls above 50,000 electrons for the read-noise optimized voltage configuration we chose for the serial clocks and gates. The amplifier linearity across a broad dynamic range from ∼300 to 35,000 e$^{−}$ was also measured to be ±2.5%. We describe key operating parameters to optimize on these characteristics and describe the specific applications for which the MAS CCD may be a suitable detector candidate.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗