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In solar energy utilization studies, correct measurements of flux arriving at other angles to optical axis must be given. Developed device (Cosine diffuser) significantly reduces measurement errors. In combination of radiation transmitter and diffuser co-operating with collimated optical instrument, relative aperture of instrument is filled.
An experimental and theoretical investigation of the feasibility of using the MOS C-V (capacitance-voltage) technique to determine impurity and surface state concentrations on the diffused face of Si solar cells with Ta2O5 coatings. Impurity concentration 10 A from the diffused surface is found to be 2.9 times 10 to the 20th power per cu cm. Charge density in surface and oxide states is 2.1 times 10 to the 13th power per sq cm. These data agree with theoretical predictions.-
The feasibility of using the MOS C-V technique to obtain information regarding impurity and surface state concentrations on the diffused face of silicon solar cells with Ta2O5 coatings is studied. Results indicate that the MOS C-V technique yields useful information concerning surface parameters which contribute to the high, efficiency limiting, surface recombination velocities on the n+ surface of silicon solar cells.
As the dense molecular cloud that was the precursor of our Solar System was collapsing to form a protosun and the surrounding solar-nebula accretion disk, infalling interstellar grains were heated much more effectively by radiation from the forming protosun than by radiation from the disk's accretion shock. Accordingly, we have estimated the temperatures experienced by these infalling grains using radiative diffusion calculations whose sole energy source is radiation from the protosun. Although the calculations are 1-dimensional, they make use of 2-D, cylindrically symmetric models of the density structure of a collapsing, rotating cloud. The temperature calculations also utilize recent models for the composition and radiative properties of interstellar grains (Pollack et al. 1994. Astrophys. J. 421, 615-639), thereby allowing us to estimate which grain species might have survived, intact, to the disk accretion shock and what accretion rates and molecular-cloud rotation rates aid that survival. Not surprisingly, we find that the large uncertainties in the free parameter values allow a wide range of grain-survival results: (1) For physically plausible high accretion rates or low rotation rates (which produce small accretion disks), all of the infalling grain species, even the refractory silicates and iron, will vaporize in the protosun's radiation field before reaching the disk accretion shock. (2) For equally plausible low accretion rates or high rotation rates (which produce large accretion disks), all non-ice species, even volatile organics, will survive intact to the disk accretion shock. These grain-survival conclusions are subject to several limitations which need to be addressed by future, more sophisticated radiative-transfer models. Nevertheless, our results can serve as useful inputs to models of the processing that interstellar grains undergo at the solar nebula's accretion shock, and thus help address the broader question of interstellar inheritance in the solar nebula and present Solar System. These results may also help constrain the size of the accretion disk: for example, if we require that the calculations produce partial survival of organic grains into the solar nebula, we infer that some material entered the disk intact at distances comparable to or greater than a few AU. Intriguingly, this is comparable to the heliocentric distance that separates the C-rich outer parts of the current Solar System from the C-poor inner regions.
This paper describes the fabrication of solar cells made by a simple open tube p(+)-diffusion into bulk n-GaAs. In addition, cell performance is provided as an indicator of the quality of bulk GaAs for this application. Initial results using this technique (12.2 percent efficiency at AM1 for 0.5 sq cm cells) are promising, and indicate directions for materials improvement. It is shown that the introduction of the diffusant (zinc) with point defects significantly affects the material properties and results in an increase in current capability.
The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.
Diffusion and scatter free cosmic ray propagation theories are discussed in terms of the quality of their alternate viewpoints. A hypothetical model of conditions in interplantary space is described which aids in the comparison. A plot of the intensity of the interplanetary magnetic field over a long period is presented, and the association of these regions with high velocity streams is shown to support the scatter free viewpoint.
Minority-carrier diffusion lengths in amphoteric GaAs:Si were investigated. Electron and hole diffusion lengths in p- and n-type, respectively, were determined to be 13 microns and 7 microns. Preliminary efficiency measurements on heteroface structures based on amphoteric GaAs:Si p-n junctions indicated that these devices should make excellent solar cells.
Recently, we have succeeded in fabricating diffused junction p(+)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3%. The maximum AMO, 25 C efficiency recorded to date on bare cells is, however, only 13.2%. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(+)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: 1) the formation of thin p(+) InP:Cd emitter layers, 2) electroplated front contacts, 3) surface passivation and 4) the design of a new native oxide/AI203/MgF2 three layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.
A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.
Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.
Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.
The nonadiabatic frequencies of a standard solar model and a solar model that includes helium diffusion are discussed. The nonadiabatic pulsation calculation includes physics that describes the losses and gains due to radiation. Radiative gains and losses are modeled in both the diffusion approximation, which is only valid in optically thick regions, and the Eddington approximation, which is valid in both optically thin and thick regions. The calculated pulsation frequencies for modes with l less than or equal to 1320 are compared to the observed spectrum of the Sun. Compared to a strictly adiabatic calculation, the nonadiabatic calculation of p-mode frequencies improves the agreement between model and observation. When helium diffusion is included in the model the frequencies of the modes that are sensitive to regions near the base of the convection zone are improved (i.e., brought into closer agreement with observation), but the agreement is made worse for other modes. Cyclic variations in the frequency spacings of the Sun as a function of frequency of n are presented as evidence for a discontinuity in the structure of the Sun, possibly located near the base of the convection zone.
Effects of diffusion redistribution of phosphorous on characteristics of silicon solar cells
A determination of diffusivity on solar cells is here reported which utilizes a one dimensional treatment of diffusion under sinusoidal excitation. An intensity-modulated beam of a scanning electron microscope was used as a source of excitation. The beam was injected into the rear of the cell, and the modulated component of the induced terminal current was recovered phase sensitively. A Faraday cup to measure the modulated component of beam current was mounted next to the sample, and connected to the same electronics. A step up transformer and preamplifier were mounted on the sample holder. Beam currents on the order of 400-pA were used in order to minimize effects of high injection. The beam voltage was 34-kV, and the cell bias was kept at 0-V.
Verification of the Visible Infrared Imager Radiometer Suite (VIIRS) End-to-End (E2E) sensor calibration is highly recommended before launch, to identify any anomalies and to improve our understanding of the sensor on-orbit calibration performance. E2E testing of the Reflective Solar Bands (RSB) calibration cycle was performed pre-launch for the VIIRS Fight 1 (F1) sensor at the Ball Aerospace facility in Boulder CO in March 2010. VIIRS reflective band calibration cycle is very similar to heritage sensor MODIS in that solar illumination, via a diffuser, is used to correct for temporal variations in the instrument responsivity. Monochromatic light from the NIST T-SIRCUS was used to illuminate both the Earth View (EV), via an integrating sphere, and the Solar Diffuser (SD) view, through a collimator. The collimator illumination was cycled through a series of angles intended to simulate the range of possible angles for which solar radiation will be incident on the solar attenuation screen on-orbit. Ideally, the measured instrument responsivity (defined here as the ratio of the detector response to the at-sensor radiance) should be the same whether the EV or SD view is illuminated. The ratio of the measured responsivities was determined at each collimator angle and wavelength. In addition, the Solar Diffuser Stability Monitor (SDSM), a ratioing radiometer designed to track the temporal variation in the SD BRF by direct comparison to solar radiation, was illuminated by the collimator. The measured SDSM ratio was compared to the predicted ratio. An uncertainty analysis was also performed on both the SD and SDSM calibrations.
The purpose was to demonstrate the possibility of fabricating thermally diffused p(+)n InP solar cells having high open-circuit voltage without sacrificing the short circuit current. The p(+)n junctions were formed by closed-ampoule diffusion of Cd through a 3 to 5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n-InP:S Czochralski LEC grown substrates. For solar cells made by thermal diffusion the p(+)n configuration is expected to have a higher efficiency than the n(+)p configuration. It is predicted that the AM0, BOL efficiencies approaching 19 percent should be readily achieved providing that good ohmic front contacts could be realized on the p(+) emitters of thickness lower than 1 micron.
Interplanetary diffusion model for time dependency of intensity of solar cosmic ray event