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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18

All sources NASA NTRS DOE OSTI

NASA NTRS2005

Electronics box having internal circuit cards interconnected to external connectors sans motherboard

An electronics chassis box includes a pair of opposing sidewalls, a pair of opposing end walls, a bottom surface, a top cover, and ring connectors assemblies mounted in selective ones of the walls of the electronic box. Boss members extend from the bottom surface at different heights upon which circuit cards are mounted in spatial relationship to each other. A flex interconnect substantially reduces and generally eliminates the need of a motherboard by interconnecting the circuit cards to one another and to external connectors mounted within the ring connector assemblies.

Hockett, John E.↗

NASA NTRS1995

Method for fabricating an interconnected array of semiconductor devices

A method of forming an array of interconnected solar cells. A flexible substrate carrying semiconductor and conductive layers is divided into individual devices by slitting the substrate along the web length. The individual devices are then connected with one another in series by laminating the substrate onto an insulating backing and by depositing conducting interconnection layers which join the lower conductor of one device with the top conductor of the adjoining device.

Grimmer, Derrick P.↗

NASA NTRS1976

Process for making a multilayer interconnect system

A process for making an interconnect system for a multilayer circuit pattern. The interconnect system is formed having minimized through-hole space consumption so as to be suitable for high density, closely meshed circuit patterns.

Zachry, Clyde L.↗

NASA NTRS2011

Decentralized Adaptive Control of Systems with Uncertain Interconnections, Plant-Model Mismatch and Actuator Failures

Decentralized adaptive control is considered for systems consisting of multiple interconnected subsystems. It is assumed that each subsystem s parameters are uncertain and the interconnection parameters are not known. In addition, mismatch can exist between each subsystem and its reference model. A strictly decentralized adaptive control scheme is developed, wherein each subsystem has access only to its own state but has the knowledge of all reference model states. The mismatch is estimated online for each subsystem and the mismatch estimates are used to adaptively modify the corresponding reference models. The adaptive control scheme is extended to the case with actuator failures in addition to mismatch.

Patre, Parag↗

NASA NTRS2014

Copper Nanowire Production for Interconnect Applications

A method of fabricating metallic Cu nanowires with lengths up to about 25 micrometers and diameters in a range 20-100 nanometers, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 micrometers), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nanometers. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).

Han, Jin-Woo↗

NASA NTRS2015

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype ICs with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3-and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient.

Silicon Carbide↗

NASA NTRS2015

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype IC's with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3- and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient. Improved reproducibility remains to be accomplished.

JFET↗

NASA NTRS2018

Interconnection of Semiconductor Devices in Extreme Environment Microelectronic Integrated Circuit Chips

A process of fabrication and the resulting integrated circuit device is made of patterned metal electrical interconnections between semiconductor devices residing on and forming extremely harsh environment integrated circuit chips. The process enables more complicated wide band gap semiconductor integrated circuits with more than one level of interconnect to function for prolonged time periods (over 1000 hours) at much higher temperatures (500 C).

Spry, David J.↗

NASA NTRS2017

Pt: Ti Diffusion Barrier, Interconnect, and Simultaneous Ohmic Contacts to n- and p-type 4H-SiC

We report the initial results of using co-sputtered Pt:Ti 80:20 at. % composition ratio metallization as a diffusion barrier against gold (Au) and oxygen (O), as an interconnect layer, as well as forming simultaneous ohmic contacts to n-and p-type 4H-SiC. Having a single conductor with such combined multi-functional attributes would appreciably reduce the fabrication costs, processing time and complexity that are inherent in the production of SiC based devices. Auger Electron Spectroscopy, Focused Ion Beam-assisted Field Emission Scanning Electron Microscopy and Energy Dispersive Spectroscopy analyses revealed no Au and O migration to the SiC contact surface and minimal diffusion through the Pt:Ti barrier layer after 15 minutes of exposure at 800 °C in atmosphere, thus offering potential long term stability of the ohmic contacts. Specific contact resistance values of 7 x 10(exp -5) and 7.4 x 10(exp -4) Ω-sq.cm were obtained on the n (N(sub d)=7 x 10(exp 18) per cu.cm and p (N(sub a)=2 x 10(exp 20) per cu. cm) -type 4H-SiC, respectively. The resistivity of 75 μΩ-cm was obtained for the Pt:Ti layer that was sandwiched between two SiO2 layers and annealed in pure O ambient up to 900 °C, which offers promise as a high temperature interconnect metallization.

Simultaneous Ohmic Contact↗

NASA NTRS2026

Synchronized Eruptions on Io: Possible Evidence of Interconnected Subsurface Magma Reservoirs

On 27 December 2024, Juno's JIRAM (Jovian InfraRed Auroral Mapper) instrument observed an unprecedented volcanic event in Io's southern hemisphere, covering a vast region of ∼65,000 km2, near 73°S, 140°E. Within the imaged region, only one hot spot was previously known (Pfd454). This feature was earlier estimated to cover an area of 300 km2 with a total power output of 34 GW. JIRAM results show that the region produces a power output of 140–260 TW, over 1,000 times higher than earlier estimates and likely exceeding the brightest eruption ever recorded on Io, that of Surt in 2001 (∼80 TW). Three adjacent hot spots also exhibited dramatic power increases: P139, PV18, and an unnamed feature south of the main one that surged to ∼1 TW, placing all of them among the top 10 most powerful hot spots observed on Io. A temperature analysis of the features supports the simultaneous onset of these brightenings and suggests a single eruptive event propagating beneath the surface across hundreds of kilometers; this is the first time this has been observed on Io. This in turn would imply a connection among the hotspots' magma reservoirs, while other nearby hotspots that have been known to be active in the recent past, such as Kurdalagon Patera, appear unaffected. The simultaneity supports models of massive, interconnected magma reservoirs. The topology of these regional magma systems may resemble that of a large-scale sponge, in which the massive reservoirs are the pores, interconnected through a largely solid outer shell.

A Mura↗

DOE OSTI2016

Fuel cell system with interconnect

The present invention includes a fuel cell system having an interconnect that reduces or eliminates diffusion (leakage) of fuel and oxidant by providing an increased densification, by forming the interconnect as a ceramic/metal composite.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2016

Architecture for on-die interconnect

In an embodiment, an apparatus includes: a plurality of islands configured on a semiconductor die, each of the plurality of islands having a plurality of cores; and a plurality of network switches configured on the semiconductor die and each associated with one of the plurality of islands, where each network switch includes a plurality of output ports, a first set of the output ports are each to couple to the associated network switch of an island via a point-to-point interconnect and a second set of the output ports are each to couple to the associated network switches of a plurality of islands via a point-to-multipoint interconnect. Other embodiments are described and claimed.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2018

Cellular structures with interconnected microchannels

A method for fabricating a cellular tritium breeder component includes obtaining a reticulated carbon foam skeleton comprising a network of interconnected ligaments. The foam skeleton is then melt-infiltrated with a tritium breeder material, for example, lithium zirconate or lithium titanate. The foam skeleton is then removed to define a cellular breeder component having a network of interconnected tritium purge channels. In an embodiment the ligaments of the foam skeleton are enlarged by adding carbon using chemical vapor infiltration (CVI) prior to melt-infiltration. In an embodiment the foam skeleton is coated with a refractory material, for example, tungsten, prior to melt infiltration.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Architecture for on-die interconnect

42 ENGINEERING↗

DOE OSTI2018

Interconnect system with friction fit backshell

Various technologies described herein pertain to interconnect systems for electrical cables. An interconnect system can include a connector, an adapter ring, and a backshell. The connector includes a threaded distal coupling portion. The adapter ring includes a threaded proximal coupling portion and a non-threaded distal coupling portion. The backshell includes a proximal coupling portion and a port. The threaded proximal coupling portion of the adapter ring and the threaded distal coupling portion of the connector can be mechanically attached. Additionally, the proximal coupling portion of the backshell and the non-threaded distal coupling portion of the adapter ring can be mechanically attached. A wire bundle can enter the backshell through the port, pass through the adapter ring, and terminate at the connector. A shield that encloses the wire bundle can terminate at the backshell such that an end of the shield is positioned around an outer surface of the port.

42 ENGINEERING↗

DOE OSTI2018

Interconnect system with friction fit backshell

42 ENGINEERING↗

DOE OSTI2019

Fuel cell system including multilayer interconnect

In some examples, a fuel cell comprising a first electrochemical cell including a first anode and a first cathode; a second electrochemical cell including a second anode and a second cathode; and an interconnect configured to conduct a flow of electrons from the first anode to the second cathode, wherein the interconnect comprises a first portion and a second portion, wherein the first portion is closer to the anode than the second portion, and the second portion is closer to the cathode than the first portion, wherein the first portion comprises one or more of doped ceria, doped lanthanum chromite, and doped yttrium chromite, and wherein the second portion comprises one or more of a Co—Mn spinel and a ABO3 perovskite.

Liu, Zhien↗

DOE OSTI2021

Properties of the Inter-area Modes of the U.S. Eastern Interconnection System

With an increase in the oscillation events observed in the U.S. Eastern Interconnection (EI), it has become increasingly important to have a good understanding of the EI system oscillatory behavior. However, as compared to the Western Interconnection system (WI), not much work has been done in this regard for the EI system. Therefore, in this paper, a thorough analysis is carried out to identify inter-area modes and their properties for the EI system using model-based approach. Multi-channel Prony method is used in this paper for estimating system modes and mode-shapes.

Agrawal, Urmila↗