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At least 325 records · Page 18

An analysis of the contact sintering process in III-V solar cells

The possibility of eliminating the gross mechanical changes that take place during sintering while retaining the processes that reduce contact resistivity is investigated. Before considering the electrical aspects, however, it is necessary to understand the relevant metallurgy. As the sintering process proceeds in the InP-Au system, dramatic color changes that enable a precise measurement of the kinetics of each step occur. A detailed insight into the processes that control each stage in the InP-Au interaction has resulted. It is shown that contact sintering in the InP-Au system consists of three consecutive stages, each of which is controlled by a separate mechanism.

Weizer, Victor G.↗

A review of indium phosphide space solar cell fabrication technology

A review of the status of InP cell efficiency and of approaches to the reduction of cell cost is presented. The use of heteroepitaxial techniques such as InP-on-GaAs and InP-on-Si is discussed along with the use of chemical and mechanical techniques for removal and recovery of the substrate. The efficiency ultimately obtainable with designs made possible by such an approach is calculated.

Spitzer, M. B.↗

Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

Metalorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greaater than 16 percent AM0) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AM0 efficiency at 25 C.

Jain, R. K.↗

The achievement of low contact resistance to indium phosphide: The roles of Ni, Au, Ge, and combinations thereof

We have investigated the electrical and metallurgical behavior of Ni, Au-Ni, and Au-Ge-Ni contacts on n-InP. We have found that very low values of contact resistivity rho(sub c) in the E-7 omega-sq cm range are obtained with Ni-only contacts. We show that the addition of Au to Ni contact metallization effects an additional order of magnitude reduction in rho(sub c). Ultra-low contact resistivities in the E-8 omega-sq cm range are obtained with both the Au-Ni and the Au-Ge-Ni systems, effectively eliminating the need for the presence of Ge in the Au-Ge-Ni system. The formation of various nickel phosphides at the metal-InP interface is shown to be responsible for the observed rho(sub c) values in the Ni and Au-Ni systems. We show, finally, that the order in which the constituents of Au-Ni and Au-Ge-Ni contacts are deposited has a significant bearing on the composition of the reaction products formed at the metal-InP interface and therefore on the contact resistivity at that interface.

Fatemi, Navid S.↗

Influence of the Dislocation Density on the Performance of Heteroepitaxial Indium Phosphide Solar Cells

Calculations are made to study the dependence of heteroepitaxial InP solar-cell efficiency on dislocation density. Effects of surface recombination velocity and cell emitter thickness are considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20 percent AM0 efficiency could be fabricated if dislocations are reduced to less than 100,000/sq cm.

Jain, R. K.↗

High voltage thermally diffused p(+)n solar cells

The possibility of fabricating thermally diffused p(+)n InP solar-cells with high open-circuit voltage without sacrificing the short circuit current is discussed. The p(+)n InP junctions were formed by Cd and Zn diffusion through a 3-5-nm-thick anodic or chemical phosphorus-rich oxide cap layer grown on n:InP:S (with ND-NA = 3.5 x 10 exp 16 and 4.5 x 10 exp 17/cu cm) Czochralski LEC-grown substrates. After thinning the emitter from its initial thickness of 1 to 2.5 micron down to 0.06-0.15 micron, the maximum efficiency was found when the emitter was 0.2 to 0.3 micron thick. Typical AM0, 25 C values of 854-860 mV were achieved for Voc, Jsc values were from 25.9 to 29.1 mA/sq cm using only the P-rich passivating layer left after the thinning process as an antireflection coating.

Faur, M.↗

Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators

A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.

Deo, Naresh C.↗

Performance of Ga(0.47)In(0.53)As cells over a range of proton energies

Ga(0.47)In(0.53)As solar cells were processed by OMVPE and their characteristics determined at proton energies of 0.2, 0.5, and 3 MeV. Emphasis was on characteristics applicable to use of this cell as the low bandgap member of a monolithic, two terminal high efficiency InP/GaInAs cell. It was found that the radiation induced degradation in efficiency, I(sub SC), V(sub OC) and diffusion length increased with decreasing proton energy. When efficiency degradations were compared with InP it was observed that the present cells showed considerably more degradation over the entire energy range. Similar to InP, R(sub C), the carrier removal rate, decreased with increasing proton energy. However, numerical values for R(sub C) differed from those observed with InP. The difference is attributed to differing defect behavior between the two cell types. It was concluded that particular attention should be paid to the effects of low energy protons especially when the particle's track ends in one cell of the multibandgap device.

Weinberg, I.↗

Deep Space Network, Cryogenic HEMT LNAs

Exploration of the Solar System with automated spacecraft that are more than ten astronomical units (1 AU = 149,597,870.691 km) from earth requires very large antennae employing extremely sensitive receivers. A key figure of merit in the specification of the spacecraft-to-earth telecommunications link is the ratio of the antenna gain to operatio nal noise temperature (G/Top) of the system. The Deep Space Network (DSN) receivers are cryogenic, low-noise amplifiers (LNAs) which addres s the need to maintain Top as low as technology permits. Historicall y, the extra-ordinarily sensitive receive systems operated by the DSN have required ctyogenically cooled, ruby masers, operating at a physi cal temperature near the boiling point of helium, as the LNA. Althoug h masers continue to be used today, they are hand crafted at JPL and expensive to manufacture and maintain. Recent advances in the developm ent of indium phosphide (InP) based high electron mobility transistor s (HEMTs) combined with cryogenic cooling near the boiling point of h ydrogen have made this alternate technology comparable with and a fraction of the cost of maser technology. InP HEMT LNA modules are demons trating noise temperatures less than ten times the quantum noise limi t (10hf/k) from 1 to 100 GHz. To date, the lowest noise LNA modules developed for the DSN have demonstrated noise temperatures of 3.5 K and 8.5 K at 8.5 K at 32 GHz, respectively. Front-end receiver packages employing these modules have demonstrated operating system noise temperatures of 17 K at 8.4 GHz (on a 70m antenna at zenith) and 39 K at 3 2 GHz (on a 34m antenna at zenith). The development and demonstration of cryogenic, InP HEMT based front-end amplifiers for the DSN requir es accurate component and module characterization, and modeling from 1 to 100 GHz at physical temperatures down to 12 K. The characterizati on and modeling begins with the HEMT chip, proceeds to the multi-stag e HEMT LNA module, and culminates with the complete front-end cryogenic receiver package for the antenna. This presentation will provide a n overview of this development process. Examples will be shown for de vices, LNA modules, front-end receiver packages, antennae employing these packages and the improvements to the down-link capacity.

low-noise amplifiers (LNAs)↗

Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2.7 dB at a frequency of 181 GHz. The measured gain results of each chip are shown next to their respective photos.

Samoska, Lorene↗

Update on Waveguide-Embedded Differential MMIC Amplifiers

There is an update on the subject matter of Differential InP HEMT MMIC Amplifiers Embedded in Waveguides (NPO-42857) NASA Tech Briefs, Vol. 33, No. 9 (September 2009), page 35. To recapitulate: Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The MMICs are designed integrally with, and embedded in, waveguide packages. The instant work does not mention InP HEMTs but otherwise reiterates part of the subject matter of the cited prior article, with emphasis on the following salient points: An MMIC is mounted in the electric-field plane ("E-plane") of a waveguide and includes a finline transition to each differential-amplifier stage. The differential configuration creates a virtual ground within each pair of transistor-gate fingers, eliminating the need for external radio-frequency grounding. This work concludes by describing a single-stage differential submillimeter-wave amplifier packaged in a rectangular waveguide and summarizing results of tests of this amplifier at frequencies of 220 and 305 GHz.

Kangaslahti, Pekka↗

Aerosol-Ice Formation Closure Pilot Study (AEROICESTUDY) Field Campaign Report

The aerosol-ice formation closure pilot study (AEROICESTUDY) was a field campaign conducted at the U.S. Department of Energy Atmospheric Radiation Measurement (ARM) user facility at the Southern Great Plains (SGP) observatory from October 7 to 28, 2019. The purpose of this campaign was to test a field observational approach for conducting an aerosol-ice formation closure study. In other words, the goal was to predict the number of ice nucleating particles (INPs) from the measurements of physical and chemical aerosol properties and compare those to measured INP number concentrations. This project was motivated by the fact that the aerosol community has widely conducted aerosol radiative closure, aerosol-cloud condensation nuclei (CCN), and CCN-droplet closure studies to test the physical models and parameterizations that cloud-resolving and climate models rely on to perform reliable simulations of the Earth system and energy budget. However, very few closure studies related to INPs have been conducted, and to our knowledge, none using robust, size-resolved, ambient aerosol composition measurements as model inputs

AEROICESTUDY↗

The impacts of immersion ice nucleation parameterizations on Arctic mixed-phase stratiform cloud properties and the Arctic radiation budget in GEOS-5

The influence of four different immersion freezing parameterizations on Arctic clouds and the top-of-the atmosphere (TOA) and surface radiation fluxes is investigated in the fifth version of the National Aeronautics and Space Administration (NASA) Goddard Earth Observing System (GEOS-5) with sea surface temperature, sea ice fraction and aerosol emissions held fixed. The different parameterizations were derived from a variety of sources, including classical nucleation theory, field and laboratory measurements. Despite the large spread in the ice-nucleating particle (INP) concentrations in the parameterizations, the cloud properties and radiative fluxes had a tendency to form two groups, with the lower INP concentration category producing larger water path and low-level cloud fraction during winter and early spring, whereas the opposite occurred during the summer season. The stability of the lower troposphere was found to strongly correlate with low-cloud fraction, and along with the effect of ice nucleation, ice sedimentation and melting rates, appears to explain the spring-to-summer reversal pattern in the relative magnitude of the cloud properties between the two categories of simulations. The strong modulation effect of the liquid phase on immersion freezing led to the successful simulation of the characteristic Arctic cloud structure, with a layer rich in supercooled water near cloud top and ice and snow at lower levels. Comparison with satellite retrievals and in situ data suggest that simulations with low INP concentrations more realistically represent Arctic clouds and radiation.

Arctic↗

Technology Maturation for Cloud Ice Radiometers

Global measurements of ice in clouds, both the amount and particle size distribution, are critically needed to reduce uncertainties in global climate models. The retrieval of this information is best achieved with a range of receiver channels across the submillimeter wave range. Advancement of low noise Indium Phosphide (InP) MMIC amplifier technology to 25-nm gate length enabled us to develop miniature submillimeter-wave receivers for a CubeSat scale instrument that achieves 6 km spatial resolution. We developed the 25-nm InP MMICs and radiometer receivers for 240, 310, 380, 670 GHz. The 25-nm InP MMIC technology was thermal vacuum tested to reduce risk for future space mission.

Duffy, Maxwell↗

Cryogenic Low Noise MMIC Amplifiers for U-Band (40-60 GHz)

In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (LNA) and mixer designs for U-Band, also known as the WR19 waveguide band (40-60 GHz). The LNAs were fabricated in NGC’s 35 nm InP HEMT MMIC process. The MMICs were packaged in WR19 waveguide housings and tested for noise, both at room temperature and cryogenically. We present the results, including a comparison to the state-of-the-art, and discuss applications for amplifiers in this frequency range. To date, these are the first cryogenic 35 nm InP MMIC results covering the 40-60 GHz range. We achieved a noise temperature less than 30 K over the 40-60 GHz range, when the amplifiers were cryogenically cooled. These results are comparable with other results in the literature, and we believe are the lowest reported for MMICs in the 50-60 GHz range.

MMIC↗

Potential Link Between Ice Nucleation and Climate Model Spread in Arctic Amplification

Arctic amplification (AA) is simulated by all global climate models, however the spread in the degree of projected warming is large and the underlying mechanisms driving it are poorly understood. The impact of the temperature dependence of immersion freezing on cloud feedbacks and AA is studied using NASA's GEOS-5 model. Parameterizations that exhibit low ice-nucleating particle (INP) concentrations in the high Arctic during summer are found to weaken the cloud-phase feedback. This allows sunlight to readily melt sea-ice in the summer, which decreases the stability of the lower troposphere, causing a decrease in wintertime cloud fraction over open ocean. Arctic amplification was found to span from ∼1.4 to >2.6, which spans 30% of the spread in AA in the coupled model intercomparison project models, depending on the temperature dependence of immersion freezing. These results suggest that summertime INP concentrations may provide an observational constraint on AA.

Ice Nucleation↗

Quantifying and Modeling the Impact of Phase State on the Ice Nucleation Abilities of 2-Methyltetrols as a Key Component of Secondary Organic Aerosol Derived from Isoprene Epoxydiols

Organic aerosols (OAs) may serve as ice-nucleating particles (INPs), impacting the formation and properties of cirrus clouds when their phase state and viscosity are in the semisolid to glassy range. However, there is a lack of direct parameterization between aerosol viscosity and their ice nucleation capabilities. In this study, we experimentally measured the ice nucleation rate of 2-methyltetrols (2-MT) aerosols, a key component of isoprene-epoxydiol-derived secondary organic aerosols (IEPOX-SOA), at different viscosities. These results demonstrate that the phase state has a significant impact on the ice nucleation abilities of OA under typical cirrus cloud conditions, with the ice nucleation rate increasing by 2 to 3 orders of magnitude when the phase state changes from liquid to semisolid. An innovative parametric model based on classical nucleation theory was developed to directly quantify the impact of viscosity on the heterogeneous nucleation rate. This model accurately represents our laboratory measurement and can be implemented into climate models due to its simple, equation-based form. Based on data collected from the ACRIDICON-CHUVA field campaign, our model predicts that the INP concentration from IEPOX-SOA can reach the magnitude of 1 to tens per liter in the cirrus cloud region impacted by the Amazon rainforest, consistent with recent field observations and estimations. This novel parameterization framework can also be applied in regional and global climate models to further improve representations of cirrus cloud formation and associated climate impacts.

2-methyltetrol↗

Contact Freezing of Water Droplets by Crystalline Organic Acids

The ability of water to freeze into ice crystals in mixed-phase clouds affects physical properties, including particle size, precipitation rates, and radiative properties. The presence of an insoluble particle at the surface of water droplets can promote ice nucleation at temperatures higher than that of pure water, even in the absence of a collision. However, contact freezing remains an underexplored mode of ice nucleation. Here, we present a study of atmospherically relevant organic acids and their role as effective ice-nucleating particles (INP) in contact mode using a Raman-microscope-equipped environmental chamber. We determined contact freezing temperatures induced by solid crystals of docosanol, adipic acid, cis-pinonic acid, fumaric acid, 4-hydroxybenzoic acid, palmitic acid, phthalic acid, sebacic acid, stearic acid, terephthalic acid, and vanillic acid. All solids except fumaric acid promoted contact freezing of water droplets at significantly higher temperatures than pure water in the chamber (−15.0 to −18.5 °C vs −21.3 °C). Physical and chemical properties were identified which correlate with greater effectiveness of INPs in the contact mode, including crystal lattice mismatch with ice, carbon number, and insolubility in water. In conclusion, we suggest that the presence of these organic solids in atmospheric aerosols may promote atmospheric ice nucleation at warm temperatures.

Clouds↗