A Balance for Measuring the Planar Components of Small Forces
Instrument for remote measurement of planar components of small forces in molecular flow
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Instrument for remote measurement of planar components of small forces in molecular flow
Approximate analysis of the effect of nonzero trim on planar tumbling motion of vehicle during atmospheric reentry
Second order wave structure theory for shock wave system from body in supersonic flight analyzed for planar flows
Computer acquired performance map of etched-rhenium, niobium planar diode
Planar motion of human being subjected to action of body-fixed force
Performance evaluation of planar thermionic converters having various electrode materials
Performance of planar radioisotope thermoelectric generator model
Periodic orbit families in planar Pythagorean three body problem
Computer acquired performance mapping of fixed spaced planar diode with etched Re emitter and Nb collector over wide operating temperature range
Planar supersonic near wake flow field problem with variable viscosity and base injection, investigating boundary errors spatial decay rate
Computer acquired I-V characteristics of thermionic fixed spaced planar diodes
Performance data from an etched-rhenium, molybdenum thermionic converter are presented. The planar converter has a guard-ringed collector and a fixed spacing of 0.254 mm (10 mils). The data were acquired by using a computer and are available on microfiche as individual or composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E, collector T sub C and cesium reservoir T sub R. The composite plots have constant T sub E, and varying T sub C or T sub R, or both. The envelope and composite plots having constant I sub E are presented. The diode was tested at increments between 1500 and 2000 K for the emitter, 750 and 1100 K for the collector, and 540 and 640 K for the reservoir. In all, 774 individual current, voltage curves were obtained.
Performance data are compared for thermionic diodes with various tungsten or rhenium emitters and niobium or molybdenum collectors. The planar converters have guard-ringed collectors and a fixed space of 10 mils (0.254 mm). The data were acquired using a computer. The parameters are the temperatures of the emitter Te, collector Tc, and cesium reservoir Tr. The composite plots have constant Te and varying Tc or Tr or both. The envelope and composite plots having constant Te are presented. The diodes were tested at increments between 1500 and 2000 K for the emitters, 750 and 1100 K for the collectors, and 520 and 650 K for the reservoirs.
Incident white light and ordinary interferometer attachment provide images that differ in color according to relative heights of planar surfaces. With aid of technique, it is possible to perceive buried layers, such as diffused collectors, as well as discover defects in buried layers.
A computerized simulation of a planar phased array of circular waveguide elements is reported using mutual coupling and wide angle impedance matching in phased arrays. Special emphasis is given to circular polarization. The aforementioned computer program has as variable inputs: frequency, polarization, grid geometry, element size, dielectric waveguide fill, dielectric plugs in the waveguide for impedance matching, and dielectric sheets covering the array surface for the purpose of wide angle impedance matching. Parameter combinations are found which produce reflection peaks interior to grating lobes, while dielectric cover sheets are successfully employed to extend the usable scan range of a phased array. The most exciting results came from the application of computer aided optimization techniques to the design of this type of array.
The results of the program for the development of a more sensitive method for selecting silicon planar semiconductor devices for long life applications are reported. The manufacturing technologies (MOS and Bipolar) are discussed along with the screening procedures developed as a result of the tests and evaluations, and the effectiveness of the MOS and Bilayer screening procedures are evaluated.
Approximate expressions are presented which correlate experimental performance data from a CVD tungsten-niobium, planar thermionic converter. The current voltage characteristics are given as functions of emitter and collector temperatures and cesium pressure for currents below the knee in the ignited mode. The correlation covers the temperature ranges of 1700 to 1950 K for the emitter, 900 to 1050 K for the collector, and 580 to 645 K for the cesium reservoir.
Performance data from a chemically vapor-deposited-rhenium, niobium thermionic converter are presented. The planar converter has a guard-ringed collector and a nominal fixed spacing of 0.25 mm (10 mils). The data were obtained by using a computerized acquisition system and are available on request to one of the authors on microfiche as individual and composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E collector T sub C, and cesium reservoir T sub R. The composite plots have constant T sub E and varying T sub C or T sub R, or both. Current, voltage envelopes having constant T sub E with and without fixed T sub C appear in the present report. The diode was tested at increments between 1600 and 2000 K for the emitter Hohlraum, 800 to 1100 K for the collector, and 540 and 650 K for the reservoir. A total of 312 current, voltage curves were obtained in the present performance evaluation. Current, voltage envelopes from three rhenium emitter converters evaluated in the present program are also given. The data are compared at commom emitter Hohlraum temperatures.