SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
A method is described for producing a high density silicon carbide sintering substance which contains aluminum oxide. The sintering is done in CO gas atmosphere, which is kept at 2 to 20 atmospheric pressures.
A study on the field-induced surface-charge region in 3C silicon carbide (SiC) using 1 MHz capacitance-voltage (C-V) measurements at room temperature is here reported. A double column mercury probe was used on oxidized SiC substrates to form metal-oxide-semiconductor (MOS) structures. These structures were characterized in terms of the substrate doping profile, effective fixed oxide charge, and interface trap density. A distinctive feature of the MOS C-V curves from accumulation to inversion is that after going into deep depletion the capacitance rises to its equilibrium inversion level during the voltage sweep. Capacitance transient measurements indicate that the minority-carrier generation occurs at the SiO2/SiC interface.
A deep level transient spectroscopy (DLTS) study on n-type epitaxial cubic silicon carbide grown on Si substrates has been performed. The results of this study indicate the presence of at least two majority-carrier traps. One trap is located 0.34 eV from the conduction-band edge; and the other trap is located 0.68 eV from the conduction-band edge. These two traps have concentrations of approximately 1 x 10 the 15th/cu cm. The DLTS spectrum has been investigated as a function of the surface treatment of the SiC. The results of this investigation indicate that one of the levels (SCE2) appears to be formed as a result of high temperature thermal oxidation.
Tensile strengths and stress rupture lives of carbon-fiber reinforced silicon carbide (C/SiC) specimens were measured at 800 C and are compared to previously reported 1200 C data. All tests were conducted in an environmental chamber containing 1000 ppm of oxygen in argon. The average 800 C tensile strength of 610 MPa is 10% greater than at 1200 C. Average stress rupture lives at 800 C were 2.5 times longer than those obtained at 1200 C. The difference in the 800 and 1200 C lives is related to the oxidation rate of the reinforcing carbon fibers, which is the primary damage mode of C/SiC composites in oxygen-containing environments.
A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.
Presentation for master's work at University of Idaho discussing Integral Heat Transfer Test Method for Determining Thermal Resistance of Silicon Carbide Cladding and Liquid Tin System at Elevated Temperatures. Presentation covers slight literature review results/previous work, discussions on system design and approach for thermal property measurement of SiC composite and Tin system, modeling efforts, and results.
Compared to graphene with semimetallic features, two-dimensional (2D) silicon carbide (Si–C) materials constitute another highly promising family for opto-electronic applications owing to their intrinsic electronic gaps.
This study pioneers the fabrication and characterization of silicon carbide (SiC) containing cerium dioxide (CeO 2 ). CeO 2 powder was tested as a surrogate for actinide oxide waste forms such as uranium dioxide (UO 2 ) and plutonium dioxide (PuO 2 ). Several syntheses were evaluated with varying amounts of preceramic polymer (SMP-10 resin) and CeO 2 containing either SiC fiber, carbon fiber, or no fibers. Scanning electron microscopy (SEM) was used to characterize morphology and compositional differences, and energy-dispersive x-ray spectroscopy (EDS) was used to provide semiquantitative elemental analysis. In addition, each sample was characterized by density, powder x-ray diffraction (pXRD), and Raman spectroscopy. Samples containing nearly more than four times CeO 2 powder than SMP-10 resin by mass had the best properties. This research establishes a unique synthesis for SiC containing high concentrations of CeO 2 powder to illustrate how it may be managed as a potential waste form.
Quenching was used to form compressive surface layers in hot-pressed silicon carbide. The presence of the compressive stresses was verified by slotted rod tests. The slotted rod tip deflection was retained at temperatures to at least 1380 C, showing that the stresses are not relieved immediately at elevated temperatures. The flexural strength and impact resistance of specimens quenched from moderate temperatures (2000 C) were increased. Frequently, specimens quenched from higher temperatures were weakened by thermal shock damage.
Simple technique uses commercial binder, containing commercially available blended powder mixture for repairing silicon carbide coatings.
New thread material outperforms silica. Sewing threads containing silicon carbide (SiC) yarn withstand temperatures of more than 1,100 degrees C. Intended for use in stitching thermally insulating blankets.
A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques.
Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.
Stereolithography (SLA) is an established process able to produce high resolution polymer parts with complex geometries. Silicon carbide (SiC) has uses in a variety of applications, but traditionally was difficult to manufacture into complex geometries. There have been advances in producing SiC through SLA using a SiC-derived ceramic such as silicon oxycarbide (SiOC). In this study, a slurry using a commercially available resin as the base material with additional modifiers was investigated to create a SiC slurry ready for pressureless sintering. The effects of photoinitiator, dispersant and a bimodal distribution of SiC particle sizes was studied using a design of experiments (DOE). A slurry with a bimodal distribution of 70 % coarse and 30 % fine SiC powder at 40 % solids loading by volume was prepared and successfully printed. Rheology measurements show the slurry to have viscoelastic shear thinning behavior below the recommended 1000 Pas necessary for printing. Printing parameters for the new material on a commercially available SLA printer were studied parametrically. The laser marking speeds found to print the slurry was 260 mm/s and 130 mm/s. A slurry and printing parameters were determined to produce a green part with a proposed debinding cycle.
We design, fabricate, and characterize fishbone grating couplers for triangular cross-section photonics in silicon carbide compatible with color center integration. The periodic and aperiodic grating coupler designs are optimized to outcouple up to 31% of light in the fundamental TE mode of a triangular waveguide. The devices are fabricated using an ion beam etching process in a 4H–SiC sample implanted with NV center ensembles. The room-temperature transmission and the cryogenic NV center photoluminescence collection measurements indicate experimental grating coupler efficiency of up to 24%. This result provides a scalable method to efficiently extract color center light from SiC quantum nanophotonic devices to free-space optics.
Development of silicon carbide hot electron emitter
We have performed the initial characterization of single crystal 4H silicon carbide (4H-SiC) pressure sensors to determine the operational reliability over time at 800 °C. Important parameters such as the zero pressure offset, bridge resistance, and pressure sensitivity as they are affected by temperature were extracted. These parameters showed relative stability within the prescribed operational envelop of the sensor at 800 °C. Of significance is the increase in pressure sensitivity with increasing temperature beyond 400 °C, to the extent that the sensitivity at 800 °C was higher than the room temperature value. The implication of this result is that the sensor can be inserted further into the high temperature environment, thereby capturing the wider bandwidth of the pressure transients than currently possible.
General Atomics Electromagnetic Systems (GA-EMS) together with The Nonwovens Institute (NWI) and Harper International have executed on a development project to improve the production efficiency and reduce the production cost of silicon carbide (SiC) fiber – a critical material that advances US energy security and aerospace leadership. In the first budget period (BP1), the modified tow throughput (MTT) apparatus was developed, enabling fiber spinning in the form of loose coils rather than tightly packed spools (Figure 1) for batch processing of SiC fiber. This coil-based approach was proven to be capable of uniform fiber crosslinking and ceramic conversion, as well as demonstrating key process efficiencies while meeting the program fiber property targets.