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NASA NTRS2010

Physical and Electrical Characterization of Aluminum Polymer Capacitors

Conductive polymer aluminum capacitor (PA capacitor) is an evolution of traditional wet electrolyte aluminum capacitors by replacing liquid electrolyte with a solid, highly conductive polymer. On the other hand, the cathode construction in polymer aluminum capacitors with coating of carbon and silver epoxy for terminal connection is more like a combination of the technique that solid tantalum capacitor utilizes. This evolution and combination result in the development of several competing capacitor construction technologies in manufacturing polymer aluminum capacitors. The driving force of this research on characterization of polymer aluminum capacitors is the rapid progress in IC technology. With the microprocessor speeds exceeding a gigahertz and CPU current demands of 80 amps and more, the demand for capacitors with higher peak current and faster repetition rates bring conducting polymer capacitors to the center o( focus. This is because this type of capacitors has been known for its ultra-low ESR and high capacitance. Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were obtained and tested. The construction analysis of the capacitors revealed three different constructions: conventional rolled foil, the multilayer stacking V-shape, and a dual-layer sandwich structure. The capacitor structure and its impact on the electrical characteristics has been revealed and evaluated. A destructive test with massive current over stress to fail the polymer aluminum capacitors reveals that all polymer aluminum capacitors failed in a benign mode without ignition, combustion, or any other catastrophic failures. The extraordinary low ESR (as low as 3 mOMEGA), superior frequency independence reported for polymer aluminum capacitors have been confirmed. For the applications of polymer aluminum capacitors in space programs, a thermal vacuum cycle test was performed. The results, as expected, show no impact on the electrical characteristics of the capacitors. The breakdown voltage of polymer capacitors has been evaluated using a steady step surge test. Initial results show the uniform distribution in the breakdown voltage for polymer aluminum capacitors. Polymer aluminum capacitors with a combination of very high capacitance, extraordinary low ESR, excellent frequency stability, and non-ignite benign failure mode make it a niche fit in space applications for both today and future. Polymer capacitors are apparently also the best substitutes of the currently used MnO2-based tantalum capacitors in the low voltage range. However, some critical aspects are still to be addressed in the next phase of the investigation for PA capacitors. These include the long term reliability test of 125 C dry life and 85 C/85%RH humidity, the failure mechanism and de-rating, the radiation tolerance, and the high temperature performance. All of the above requires the continuous NEPP funding and support.

Liu, David (Donghang)↗

NASA NTRS2016

Influence of Molecular Simulation Model Accuracy on the Interfacial Properties of an Ionic Liquid: Overview of Recommended Practices

Increasing the energy storage capability of ionic liquid supercapacitors will require better understanding of ion-electrode interactions. We have probed the influence of these interactions on the structure and differential capacitance of of an ionic liquid ([EMIM][BF4]) at an ideal graphite interface as a function of model accuracy. Of note, differential capacitance is determined through newly derived and validated fluctuation formulas. In terms of model accuracy, we test electrostatic techniques, electrode charging techniques, and electrolyte interatomic potentials. For electrostatic summations, we employ high cost, high fidelity techniques as well as less expensive, approximate techniques for summation in slab geometry. For electrode charging, uniform, constant-charge and environmentally responsive, constant-potential conditions are employed. For the ionic liquid, constant charge and atomically polarizable models are employed. We comment on the role of model accuracy on the structure and energetics of the electric double layer as well as on the magnitude and shape of differential capacitance.

simulations↗

NASA NTRS1965

Thin-film resistors used in functional electronic blocks

Vapor-deposited thin-film resistors replace diffused resistors in R-C tank circuits in a solid state electronic block. This allows an optimum parallel capacitance to be obtained for circuit applications requiring a high resistance and a low capacitance.

Source record↗

NASA NTRS1970

Constant-amplitude RC oscillator

Sinusoidal oscillator has a frequency determined by resistance-capacitance /RC/ values of two charge control devices and a constant-amplitude voltage independent of frequency and RC values. RC elements provide either voltage-control, resistance-control, or capacitance-control of the frequency.

Kerwin, W. J.↗

NASA NTRS1972

Method for measuring static Young's modulus of tungsten to 1900 K

An instrument system was developed and tested to measure static Young's modulus of elasticity of refractory metals in tension at temperatures to 1900 K. The extensometer uses capacitance displacement sensors for measuring total elongation of a specimen and incorporates a unique high-resolution remote zero-adjusting mechanism. Details of a method for calibrating capacitance displacement sensors at temperatures to 800 K are included. The system was built to adapt to a vacuum furnace on a tensile machine and was tested on unalloyed tungsten rod specimens. The test results show that the system can measure the modulus of tungsten to 1900 K to within a precision of + or - 5 percent. The uncertainty of the measurement is estimated to be of the same order as the precision.

Harrigill, W. T., Jr.↗

NASA NTRS1972

Design, processing, and testing of lsi arrays for space station

The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comprise computer simulations that accurately predict performance; aluminum-gate COS/MOS devices including a 256-bit RAM with current sensing; and a silicon-gate process that is being used in the construction of a 256-bit RAM with voltage sensing. The Si-gate process increases speed by reducing the overlap capacitance between gate and source-drain, thus reducing the crossover capacitance and allowing shorter interconnections. The design of a Si-gate RAM, which is pin-for-pin compatible with an RCA bulk silicon COS/MOS memory (type TA 5974), is discussed in full. The Integrated Circuit Tester (ICT) is limited to dc evaluation, but the diagnostics and data collecting are under computer control. The Silicon-on-Sapphire Memory Evaluator (SOS-ME, previously called SOS Memory Exerciser) measures power supply drain and performs a minimum number of tests to establish operation of the memory devices. The Macrodata MD-100 is a microprogrammable tester which has capabilities of extensive testing at speeds up to 5 MHz. Beam-lead technology was successfully integrated with SOS technology to make a simple device with beam leads. This device and the scribing are discussed.

Lile, W. R.↗

NASA NTRS1972

Optical interferometry study of film formation in lubrication of sliding and/or rolling contacts

Seventeen fluids of widely varying physical properties and molecular structure were chosen for study. Film thickness and traction were measured simultaneously in point contacts by interferometry, from which a new theory of traction was proposed. Film thickness was measured in line contacts by interferometry and electrical capacitance to establish correlation between these two methods. An interferometric method for the absolute determination of refractive index in the contact zone was developed and applied to point contact fluid entrapments. Electrical capacitance was used to study the thickness and properties of the soft surface film which sometimes forms near a metal-fluid interface.

Stejskal, E. O.↗

NASA NTRS1973

Double time lag combustion instability model for bipropellant rocket engines

A bipropellant stability model is presented in which feed system inertance and capacitance are treated along with injection pressure drop and distinctly different propellant time lags. The model is essentially an extension of Crocco's and Cheng's monopropellant model to the bipropellant case assuming that the feed system inertance and capacitance along with the resistance are located at the injector. The neutral stability boundaries are computed in terms of these parameters to demonstrate the interaction among them.

Liu, C. K.↗

NASA NTRS1974

Surface-state spectra from thick-oxide MOS tunnel junctions

The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.

Ma, T. P.↗

NASA NTRS1975

An optimized output stage for MOS integrated circuits

An output device for optimizing propagation delay and minimizing chip area is described. An optimum means of tapering the output stages to minimize propagation delay is determined. The minimum delay is a function of the capacitive load to node ratio, the number of output stages, and the interstage propagation delay. The effects on area are also presented. A figure of merit which is a function of area and propagation time is defined which is of use in designing output stages. An optimum exists which can be considered the best compromise between further decreasing propagation delay and increasing chip area. Data are also presented which allow a designer to determine the minimum chip area once the capacitive load and the maximum allowable delay are known.

Lin, H. C.↗

NASA NTRS1976

IGFET/SOI fabrication method

Technique increases switching speeds, shortens channel length, reduces parasitic capacitance and gate overlap, and minimizes gate-to-channel capacitance. The p and n sections may be reversed, allowing fabrication of complementary devices.

Feltner, W. R.↗

NASA NTRS1976

Experimental investigation of a double-diffused MOS structure

Self-aligned polysilicon gate technology was applied to double-diffused MOS (DMOS) construction in a manner that retains processing simplicity and effectively eliminates parasitic overlap capacitance because of the self-aligning feature. Depletion mode load devices with the same dimensions as the DMOS transistors were integrated. The ratioless feature results in smaller dimension load devices, allowing for higher density integration with no increase in the processing complexity of standard MOS technology. A number of inverters connected as ring oscillators were used as a vehicle to test the performance and to verify the anticipated benefits. The propagation time-power dissipation product and process related parameters were measured and evaluated. This report includes (1) details of the process; (2) test data and design details for the DMOS transistor, the load device, the inverter, the ring oscillator, and a shift register with a novel tapered geometry for the output stages; and (3) an analytical treatment of the effect of the distributed silicon gate resistance and capacitance on the speed of DMOS transistors.

Lin, H. C.↗

NASA NTRS1977

Engine Hydraulic Stability

An analytical injector model was developed specifically to analyze combustion instability coupling between the injector hydraulics and the combustion process. This digital computer dynamic injector model will, for any imposed chamber of inlet pressure profile with a frequency ranging from 100 to 3000 Hz (minimum) accurately predict/calculate the instantaneous injector flowrates. The injector system is described in terms of which flow segments enter and leave each pressure node. For each flow segment, a resistance, line lengths, and areas are required as inputs (the line lengths and areas are used in determining inertance). For each pressure node, volume and acoustic velocity are required as inputs (volume and acoustic velocity determine capacitance). The geometric criteria for determining inertances of flow segments and capacitance of pressure nodes was set. Also, a technique was developed for analytically determining time averaged steady-state pressure drops and flowrates for every flow segment in an injector when such data is not known. These pressure drops and flowrates are then used in determining the linearized flow resistance for each line segment of flow.

Kesselring, R. C.↗

NASA NTRS1980

Measuring charge nonuniformity in MOS devices

Convenient method of determining inherent lateral charge non-uniformities along silicon dioxide/silicon interface of metal-oxide-semiconductor (MOS) employs rapid measurement of capacitance of interface as function of voltage at liquid nitrogen temperature. Charge distribution is extracted by fast-Fourier-transform analysis of capacitance voltage (C-V) measurement.

Maserjian, J.↗

NASA NTRS1967

Dynamic capacitor having a peripherally driven element and system incorporating the same

A capacitor in which one plate or electrode element is vibratable to achieve a variation in capacitance is described. The capacitor includes two spaced stationary elements. The third element is supported at its center and in the form of a thin diaphragm which is vibrated at its inherent mechanical resonant frequency to achieve a corresponding variation in capacitance between one of the stationary elements and the vibrating diaphragm.

Goldstein, C. S.↗

NASA NTRS1979

LaF3 insulators for MIS structures

Thin films of LaF3 deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively hysteresis-free and sharp C-V (capacitance-voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.

Sher, A.↗

NASA NTRS1980

Induction powered biological radiosonde

An induction powered implanted monitor for epidurally measuring intracranial pressure and telemetering the pressure information to a remote readout is disclosed. The monitor utilizes an inductance-capacitance (L-C) oscillator in which the C comprises a variable capacitance transducer, one electrode of which is a small stiff pressure responsive diaphragm. The oscillator is isolated from a transmitting tank circuit by a buffer circuit and all electric components in the implanted unit except an input and an output coil are shielded by a metal housing.

Fryer, T. B.↗

NASA NTRS1980

Analysis of differential and active charging phenomena on ATS-5 and ATS-6

Spacecraft charging on the differential charging and artificial particle emission experiments on ATS 5 and ATS 6 were studied. Differential charging of spacecraft surfaces generated large electrostatic barriers to spacecraft generated electrons, from photoemission, secondary emission, and thermal emitters. The electron emitter could partially or totally discharge the satellite, but the mainframe recharged negatively in a few 10's of seconds. The time dependence of the charging behavior was explained by the relatively large capacitance for differential charging in comparison to the small spacecraft to space capacitance. A daylight charging event on ATS 6 was shown to have a charging behavior suggesting the dominance of differential charging on the absolute potential of the mainframe. Ion engine operations and plasma emission experiments on ATS 6 were shown to be an effective means of controlling the spacecraft potential in eclipse and sunlight. Elimination of barrier effects around the detectors and improving the quality of the particle data are discussed.

Olsen, R. C.↗