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At least 325 records · Page 18

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DOE OSTI2024

From Design to Device: Challenges and Opportunities in Computational Discovery of p -Type Transparent Conductors

A high-performance p -type transparent conductor (TC) does not yet exist but could lead to advances in a wide range of optoelectronic applications and enable new architectures for, e.g., next-generation photovoltaic (PV) devices. High-throughput computational material screenings have been a promising approach to filter databases and identify new p -type TC candidates and some of these predictions have been experimentally validated. However, most of these predicted candidates do not have experimentally achieved properties on par with n -type TCs used in solar cells and therefore have not yet been used in commercial devices. Thus, there is still a significant divide between transforming predictions into results that are actually achievable in the laboratory and an even greater lag in scaling predicted materials into functional devices. In this perspective, we outline some of the major disconnects in this materials discovery process—from scaling computational predictions into synthesizable crystals and thin films in the laboratory to scaling laboratory-grown films into real-world solar devices—and share insights to inform future strategies for TC discovery and design. Published by the American Physical Society 2024

14 SOLAR ENERGY↗

DOE OSTI2024

Transformer Masked Autoencoders for RF Device Fingerprinting

Machine learning methods for RF device fingerprinting typically rely on CNN-based models. Transformer-based models have outperformed CNNs for modulation classification tasks, but there are few implementations for device fingerprinting. We train a transformer for device fingerprinting with the largest device count to date and explore several variations of the architecture. Additionally, we demonstrate that pre-training an RF transformer as a Masked Autoencoder improves classification accuracy, as has been observed for CNN fingerprinting models and vision transformers.

artificial intelligence↗

DOE OSTI2024

A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance

The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.

42 ENGINEERING↗

DOE OSTI2026

Thermal Performance of Neutron Sensor Qualification Device

The neutron sensor qualification device was developed to provide a temperature-controlled environment for neutron sensors and dosimetry, enabling irradiation in a neutron field at the Armed Forces Radiobiology Research Institute (AFRRI) TRIGA reactor facility. The device, constructed from low-activation and low neutron cross-section materials, features a modular tube furnace design with three independently controlled heating zones for controlling axial temperature distribution. Laboratory testing validated the device's thermal performance, including uniform temperature distribution with less than 6°C variation across the central region, a steady-state operational temperature of 350°C achieved in approximately 3 hours, and a cooling time constant of 3.5 hours. External surface temperatures remained safe for handling, with the surrounding aluminum structure remaining at ambient conditions. The results confirm the device’s suitability for neutron sensor qualification experiments, with potential for future operation at higher temperatures and further optimization of performance.

46 - INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AN↗

DOE OSTI2024

Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality

Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.

2D materials↗

DOE OSTI2026

From IMT Device Measurements to Network-Level Consequences: When Learning Suppresses Beyond-LIF Neuron Dynamics

Emerging neuromorphic devices such as insulator--metal transition (IMT) devices exhibit complex temporal dynamics, including slow internal state memory, hysteresis, and burst-like firing, which are poorly captured by conventional leaky integrate-and-fire (LIF) neurons. However, it remains unclear when such dynamics influence learning and inference at the network level, particularly under commonly used unsupervised plasticity rules. We present a controlled, full-stack co-design study spanning experimental characterization of individual IMT devices, compact neuron model development, and large-scale spiking network simulations with identical architectures and learning rules. Rather than optimizing benchmark accuracy, our goal is to diagnose when neuron-level dynamics survive learning and competition, and when they are suppressed, to inform the co-design of devices, networks, and learning rules that can exploit beyond-LIF complexity.

42 ENGINEERING↗

NASA NTRS1972

A catalogue of devices applicable to the measurement of boundary layers and wakes on flight vehicles

A literature search was conducted to assemble a catalog of devices and techniques which have possible application to boundary layer and wake measurements on flight vehicles. The indices used in the search were NACA, NASA STAR, IAA, USGRDR and Applied Science and Technology Index. The period covered was 1950 through 1970. The devices contained in the catalog were restricted to those that provided essentially direct measurement of velocities, pressures and shear stresses. Pertinent material was included in the catalog if it contained either an adequate description of a device and associated performance data or a presentation of applicable information on a particular measurement theory and/or technique. When available, illustrations showing the configuration of the device and test condition data were also included.

Miley, S. J.↗

NASA NTRS1971

The use of semiconductors in nonreciprocal devices for submillimeter wavelengths.

This paper reviews the use of anisotropic effects in a passive semiconductor magnetoplasma for the development of submillimeter isolators and circulators. The emphasis is on two schemes that are applicable over the far infrared portion of the spectrum. The theory of transmission devices depending on Faraday rotation is described, and experiments are discussed. At far infrared wavelengths it is not necessary to cool the semiconductor in order to achieve low forward loss. Some experimental results are available in this frequency range, and a theoretical evaluation of device performance is given. Reflection devices in which the desired signal does not propagate through the semiconductor, but is reflected off of its surface, are also discussed. Experimental results show that these devices can have a low forward loss; a variety of novel geometrical arrangements are able to improve isolator performance. Theoretical results indicating satisfactory performance for a far infrared isolator using InSb at room temperature are presented.

Hayes, R. E.↗

NASA NTRS1973

Condensate-removal device for heat exchangers

Device comprises array of perforated tubes manifolded together and connected to a vacuum suction device. Vacuum applied to these tubes pulls mixture of condensate and effluent gas through perforations and along length of tubes to discharge device. Discharge device may be a separator which separates water vapor from effluent air and allows recirculation of both of them.

Trusch, R. B.↗

NASA NTRS1973

Wide temperature range electronic device with lead attachment

A electronic device including lead attachment structure which permits operation of the devices over a wide temperature range is reported. The device comprises a core conductor having a thin coating of metal thereon whereby only a limited amount of coating material is available to form an alloy which bonds the core conductor to the device electrode, the electrode composition thus being affected only in the region adjacent to the lead.

Farrell, R.↗

NASA NTRS1972

A linear voltage-tunable distributed null device.

A linear voltage-tunable null device was predicted, fabricated, and tested. This filter is conceptually a distributed parameter RC representation of the channel of a MOSFET in a network configuration with a second MOSFET that is treated as a variable resistor. Classical transmission-line theory is used to predict a linear tuning curve with applied bias for the device. This concept was used to design a null device having a null that is linearly tunable in the range of 100 kHz. Such devices were fabricated and tested. Typical MOS processing steps were used and the resulting structures are compatible with the planar technology. The compatibility leads towards extension of this work to different frequency ranges for other specific applications.

Benz, H. F.↗

NASA NTRS1974

Charge coupled device image sensor study

An evaluation of a charge-coupled device (CCD) image sensors for use in spacecraft-borne imaging systems was conducted. The study resulted in design recommendations for two sensors, an approximately 500 times 500 element imaging device and a 1 times 190 element linear imaging device with a 190 times 121 buffer store. Emphasis was placed on the higher resolution, area-imaging sensor. The objectives of the proposed sensors are listed, results of the experiments are analyzed, and estimates of the device performance are presented. A summary of the major technical recommendations is included.

Source record↗

NASA NTRS1973

Model experiments to evaluate vortex dissipation devices proposed for installation on or near aircraft runways

The effectiveness of various vortex dissipation devices proposed for installation on or near aircraft runways is evaluated on basis of results of experiments conducted with a 0.03-scale model of a Boeing 747 transport aircraft in conjunction with a simulated runway. The test variables included type of vortex dissipation device, mode of operation of the powered devices, and altitude, lift coefficient and speed of the generating aircraft. A total of fifteen devices was investigated. The evaluation is based on time sequence photographs taken in the vertical and horizontal planes during each run.

Kohl, R. E.↗

NASA NTRS1974

A varistor technique to reduce the hazards of electrostatics to electroexplosive devices

Inherent to the design and construction of electroexplosive devices is a vulnerability to inadvertent initiation from electrostatic discharges. The small spacing (approx. 1 mm) between the bridgewire circuits and the body and between bridgewire circuits afford easy breakdown paths for electrostatic voltages. In some cases where metallic component pyrotechnic materials are loaded onto the bridgewire circuits the susceptability to inadvertant initiation is increased. An approach to solving this problem is reported based on the application of a new varistor (nonlinear resistor) material. Certain formulations of metal oxides normally have electrically nonconductive characteristics. However, at selective potentials they become conductive. By proper design and incorporation into electroexplosive devices a variety of breakdown potentials can be achieved. The breakdown potential of the varistor element can be adjusted to meet the requirements of the particular electroexplosive device. The varistor element can also be incorporated in an area isolated from the explosive or pyrotechnic material. Adaptation of this technique to a specific electroexplosive device and the resulting test data are presented.

Menichelli, V. J.↗

NASA NTRS1974

Influence of material quality and process-induced defects on semiconductor device performance and yield

An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations.

Porter, W. A.↗

NASA NTRS1975

The Annular Momentum Control Device (AMCD)

An annular momentum control device consisting principally of a spinning rim, a set of noncontacting magnetic bearings for supporting the rim, a noncontacting electric motor for driving the rim, and, for some applications, one or more gimbals is described. The device is intended for applications where requirements for control torque and momentum storage exist. Hardware requirements and potential unit configurations are discussed. Theoretical considerations for the passive use of the device are discussed. Potential applications of the device in other than passive configurations for the attitude control, stabilization, and maneuvering of spacecraft are reported.

Anderson, W. W.↗

NASA NTRS1975

Semiconductor diode laser material and devices with emission in visible region of the spectrum

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

Ladany, I.↗

NASA NTRS1975

Thermal coupling apparatus for electroexplosive devices

This paper describes the equipment for nondestructive testing of electroexplosive devices using a thermal coupling technique. The technique utilizes a self-balancing bridge to apply a nominal amount of power to the bridge wire of the device. The bridge wire behaving as a thermal sensor detects heat flow into the device when heat is preferentially directed down the center of the explosive column toward the bridge wire. Thermal equilibrium is upset and the change in power from the self-balancing bridge is measured directly in watts. Faults such as omissions, incorrect materials, contamination, and so on, can be detected by observing the rate of heat flow to the bridge wire. The response is indicative of the thermal resistance and diffusivity of the system. The paper also presents data on electroexplosive devices loaded with inert and explosive materials.

Menichelli, V. J.↗