Evaporated thin films
Superconductivity and electric resistance of thin films of tin oxide and vanadium
VANADIUM↗
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AC impedance analysis of polypyrrole thin films
The AC impedance spectra of thin polypyrrole films were obtained at open circuit potentials from -0.4 to 0.4 V vs SCE. Two limiting cases are discussed for which simplified equivalent circuits are applicable. At very positive potentials, the predominantly nonfaradaic AC impedance of polypyrrole is very similar to that observed previously for finite porous metallic films. Modeling of the data with the appropriate equivalent circuit permits effective pore diameter and pore number densities of the oxidized film to be estimated. At potentials from -0.4 to -0.3 V, the polypyrrole film is essentially nonelectronically conductive and diffusion of polymer oxidized sites with their associated counterions can be assumed to be linear from the film/substrate electrode interface. The equivalent circuit for the polypyrrole film at these potentials is that previously described for metal oxide, lithium intercalation thin films. Using this model, counterion diffusion coefficients are determined for both semi-infinite and finite diffusion domains. In addition, the limiting low frequency resistance and capacitance of the polypyrrole thin fims was determined and compared to that obtained previously for thicker films of the polymer. The origin of the observed potential dependence of these low frequency circuit components is discussed.
Penner, Reginald M.↗
Thin film growth effects on electrical conductivity in entropy stabilized oxides
Entropy stabilization has garnered significant attention as a new approach to designing novel materials. Much of the work in this area has focused on bulk ceramic processing, leaving entropy-stabilized thin films relatively under-explored. Following an extensive multi-variable investigation of polycrystalline (Mg 0.2 Co 0.2 Ni 0.2 Cu 0.2 Zn 0.2 )O thin films deposited via pulsed laser deposition (PLD), it is shown here that substrate temperature and deposition pressure have strong and repeatable effects on film texture and lattice parameter. Further analysis shows that films deposited at lower temperatures and under lower oxygen chamber pressure are 40x less electrically resistive than otherwise identical films grown at higher temperature and pressure. Annealing these films in an oxygen-rich environment increases their electrical resistivity to match that of the films grown at higher temperatures and pressures. Because of this, the electric conductivity is hypothesized to be the result of polaron hopping mediated by transition metal valence changes which compensate for oxygen off-stoichiometry.
36 MATERIALS SCIENCE↗
Copolymers of vinylferrocene and vinylimidazole for potential sensing applications
Abstract Since imidazole is easily protonated and well known to coordinated to various transition metals, its incorporation into a polymer with ferrocene may result in interesting electronic interactions between the ferrocenyl and imidazolium moieties. To this end, copolymers of vinylferrocene and vinylimidazole were prepared in various ratios by free radical polymerization. The interactions between the ferrocenyl and imidazolium moieties were studied by cyclic voltammetry, UV–Vis spectroscopy and density functional theory (DFT) studies. Cyclic voltammetry of polymer thin films showed multiple oxidation waves at low pH or in the presence of Pb 2+ or Cd 2+ ions. The UV–Vis spectrum of thin films showed an additional absorbance at 625 nm suggesting electronic interactions. In addition, DFT studies indicated that the morphology of the polymer would place some of the ferrocenyl and imidazolium moieties in close proximity.
Polymer Science↗
Evaluation of Nanostructured β-Mn 2 V 2 O 7 Thin Films as Photoanodes for Photoelectrochemical Water Oxidation
β-Mn 2 V 2 O 7 (β-MVO) was recently reported to be a promising candidate for photoelectrochemical (PEC) water splitting, with a suitable band gap and band edge positions and reasonable stability and photoactivity in preliminary tests in alkaline solution. Here, we present an in-depth evaluation of the PEC performance and stability of phase-pure nanostructured β-Mn 2 V 2 O 7 films made by calcination of a spin-cast molecular ink. We show that β-Mn 2 V 2 O 7 dissolves in pure water, corrodes in aqueous electrolytes at pH 7 and 9, and converts to amorphous manganese (hydr)oxides within minutes at pH 13. Our β-Mn 2 V 2 O 7 films yielded only miniscule photocurrents (~uA cm -2 ) for the oxidation of iodide, sulfite, or water and the reduction of iodate or water in borate- and phosphate-buffered electrolytes at pH 7 and 9, the oxidation of [Fe(CN) 6 ] 4- or water at pH 13, and the oxidation of bromide in acetonitrile, regardless of film calcination temperature and time, film thickness, and illumination geometry. Minimal photoactivity was observed even in electrolytes in which film degradation was insignificant over the duration of the PEC tests. Ultrafast transient absorption spectroscopy shows that the poor photoactivity is likely the result of fast hole trapping and recombination at the MVO surface that leaves few free charge carriers beyond the picosecond time scale. Given its poor charge transport/extraction and chemical stability, native nanostructured β-Mn 2 V 2 O 7 is ineffective for solar water splitting and future research on this material should focus on the development of superior syntheses and film morphologies, MVO alloys, heterostructures, and surface coatings to alleviate recombination and boost operational stability. This work underscores the importance of careful follow-up studies of materials identified as "hits" in combinatorial materials discovery campaigns.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Mars Atmospheric Oxidant Sensor (MAOS): An In-Situ Heterogeneous Chemistry Analysis
We describe a chemometric array sensor, the Mars Atmospheric Oxidant Sensor (MAOS) that is designed to measure the oxidation rate of thin films on the martian surface. MAOS will discriminate among leading hypotheses for oxidant production. Additional information is contained in the original extended abstract.
Zent, A. P.↗
Lowering insulator-to-metal transition temperature of vanadium dioxide thin films via co-sputtering, furnace oxidation, and thermal annealing
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Vishwa Krishna Rajan↗
Nanometer-Thick Sr 2 IrO 4 Freestanding Films for Flexible Electronics
In this article, we report the structural and optical properties of nanoscale Sr 2 IrO 4 freestanding thin-films fabricated using a water-soluble Sr 3 Al 2 O 6 layer. The coherent lattice structure, phonon modes, two-magnon Raman scattering, and optical absorption spectra of the Sr 2 IrO 4 nanomembrane are analogous to those of the layered iridate epitaxial thin-films and single crystals. Remarkably, the formation of 3-unit-cell-thick SrIrO 3 and interfacial composite layers alleviates the antiphase boundaries at the Sr 2 IrO 4 /Sr 3 Al 2 O 6 interface, resulting in structurally-robust nanomembranes. Our experimental results show that this freestanding thin-film approach of layered oxides can provide techniques for tuning or realizing unprecedented states beyond conventional thin-film methods, suggesting a pathway in achieving flexible layered-oxide electronics.
36 MATERIALS SCIENCE↗
Functionalized Metal–Organic Framework Thin Films for Stable and Efficient Electrochemical Water Oxidation under Near-Neutral Conditions
The development of molecularly modified metal− organic frameworks (MOFs) for electrochemical water oxidation has emerged as a promising strategy for efficient artificial photosynthesis. In this study, a ruthenium-based water oxidation catalyst (WOC) was incorporated into the UiO-67 framework, forming RuM−UiO-67 films grown directly on conductive FTO substrates. These modified films demonstrate efficient water oxidation activity at near-neutral pH (pH 6), operating at a low overpotential of ∼600 mV. The catalyst exhibits a turnover frequency (TOF) of (0.32 ± 0.02) s −1 at 1.5 V versus the normal hydrogen electrode (NHE) in buffered solution (pH 6) for the oxygen evolution reaction. Notably, incorporation into the MOF results in a 12-fold increase in electroactive surface coverage compared to a monolayer of the same catalyst on bare FTO. Faradaic efficiency analysis revealed incomplete conversion to O 2 , and follow-up iodometric analysis confirmed the formation of H 2 O 2 as a competing two-electron oxidation product during electrocatalysis. These results highlight the utility of MOF-based architectures for maximizing the catalyst accessibility and stability under electrochemical water oxidation conditions.
catalysts↗
Research into the use of pyrolytic oxides and polymers for the fabrication of thin film high energy capacitors
Construction, capacitance and dissipation factor, and electrode materials for single layer capacitors are discussed. Basic construction, phosphosilicate glass, ten layer capacitors, twenty layer capacitors, stress measurements, buffered oxide layers, and 30 layer capacitors are also discussed. Spin-on phosphosilicate glass is addressed. Polymers as dielectric materials are also considered.
Nevin, J. H.↗
Expanding the Zinc Precursor Toolbox: A Comparative Study of Precursors for Thermal ALD of ZnO Thin Films
Atomic layer deposition (ALD) of zinc oxide (ZnO) has been widely researched using diethyl zinc (DEZ)-based methods. The significant importance of thin films of ZnO as transparent conductive oxides (TCO) in optoelectronic devices and photovoltaics warrants examining alternative Zn precursors for ZnO ALD as potential replacements for the pyrophoric DEZ. In this study, we investigated three alternative Zn precursors: Zn(EEKI)2, Zn(DMP)2, ZnEt(HMDS), in the process development for high-quality ZnO thin films and compared them to DEZ. The ALD processes were studied using in situ spectroscopic ellipsometry. The properties of the ALD ZnO films were characterized using ex situ X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry and nuclear reaction analysis (RBS/NRA), X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and ultraviolet-visible (UV/Vis) spectrophotometry. These measurements confirmed the formation of pure, stoichiometric, and polycrystalline ZnO films using all four Zn precursors. Although the selected precursors are chemically diverse Zn compounds, they all yielded saturating ALD processes and high-quality ZnO thin films at 200 °C. This study highlights the potential benefits of alternative zinc precursors in designing ALD processes for ZnO thin films.
Obenlüneschloß, Jorit↗
High Temperature - Thin Film Strain Gages Based on Alloys of Indium Tin Oxide
A stable, high temperature strain gage based on reactively sputtered indium tin oxide (ITO) was demonstrated at temperatures up to 1050 C. These strain sensors exhibited relatively large, negative gage factors at room temperature and their piezoresistive response was both linear and reproducible when strained up to 700 micro-in/in. When cycled between compression and tension, these sensors also showed very little hysteresis, indicating excellent mechanical stability. Thin film strain gages based on selected ITO alloys withstood more than 50,000 strain cycles of +/- 500 micro-in/in during 180 hours of testing in air at 1000 C, with minimal drift at temperature. Drift rates as low as 0.0009%/hr at 1000 C were observed for ITO films that were annealed in nitrogen at 700 C prior to strain testing. These results compare favorably with state of the art 10 micro-m thick PdCr films deposited by NASA, where drift rates of 0.047%/hr at 1050 C were observed. Nitrogen annealing not only produced the lowest drift rates to date, but also produce the largest dynamic gage factors (G = 23.5). These wide bandgap, semiconductor strain sensors also exhibited moderately low temperature coefficients of resistance (TCR) at temperatures up to 1100 C, when tested in a nitrogen ambient. A TCR of +230 ppm/C over the temperature range 200 C < T < 500 C and a TCR of -469 ppm/C over the temperature range 600 C < T < 1100 C was observed for the films tested in nitrogen. However, the resistivity behavior changed considerably when the same films were tested in oxygen ambients. A TCR of -1560 ppm/C was obtained over the temperature range of 200 C < T < 1100 C. When similar films were protected with an overcoat or when ITO films were prepared with higher oxygen contents in the plasma, two distinct TCR's were observed. At T < 800 C, a linear TCR of -210 ppm/C was observed and at T > 800 C, a linear TCR of -2170 DDm/C was observed. The combination of a moderately low TCR and a relatively large gage factor make these semiconducting oxide films promising candidates for the active strain elements in high temperature thin film strain gages, particularly in applications where static strain measurement is desired.
Gregory, Otto J.↗
Nano-crystalline porous tin oxide film for carbon monoxide sensing
A tin oxide sol is deposited on platinum electrodes (12) of a sensor (10). The sol is calcined at a temperature of 500 to 800.degree. C. to produce a thin film of tin oxide with a thickness of about 150 nm to 2 .mu. and having a nano-crystalline structure with good stability. The sensor rapidly detects reducing gases, such as carbon monoxide, or hydrocarbons and organic vapors. Sensors using films calcined at around 700.degree. C. have high carbon monoxide selectivity with a response time of around 4 minutes and a recovery time of 1 minute, and therefore provide good detection systems for detection of trace amounts of pollutants such as toxic and flammable gases in homes, industrial settings, and hospitals.
Liu, Chung-Chiun↗
Interface creation on a mixed-terminated perovskite surface
In the field of complex oxide heterostructures, understanding of the initial substrate surface can be critical to fundamental studies regarding the development of emergent properties at the film–substrate interface. For this reason, a considerable amount of effort has gone into the development of techniques to achieve surfaces with single termination for a variety of perovskite single crystals. However, a decisive understanding of how an interface is created when epitaxial growth occurs on a mixed terminated surface remains lacking. Employing in situ synchrotron X-ray scattering during thin film growth by molecular beam epitaxy, we investigate the initial stages of growth on (LaAlO 3 )(Sr 2 AlTaO 6 ) (001) substrates with mixed termination. Using LaNiO 3 as a model system, we find that the surface layers of the substrate restructure during deposition such that while a NiO 2 monolayer is weakly bound, a LaO monolayer bonds strongly, effectively incorporating with (Al, Ta)O 2 from the surface and forming a La(Al, Ta)O 3 ultrathin film. <!--/abstract content--><!--fulltext content--> With regard to the synthesis of high-quality complex oxide heterostructures, it is important that the substrate meet an array of criteria related to the crystal structure, lattice parameter, thermodynamic properties, electrical and optical properties, and so on. In particular, the surface of the substrate should be atomically smooth and exhibit the step-terrace structure ideal for epitaxial thin film growth. Perovskite oxides with the formula ABO 3 have two possible (001) surfaces: AO (A-site termination) and BO 2 (B-site termination). The ability to consistently achieve one of these surface terminations on SrTiO 3 , i.e., TiO 2 , has helped SrTiO 3 become the predominant oxide in the field.
36 MATERIALS SCIENCE↗
Mars Atmospheric Oxidant Sensor (MAOS): An In-Situ Heterogeneous Chemistry Analysis
We describe a chemometric array sensor, the Mars Atmospheric Oxidant Sensor (MAOS, pronounced "mouse '') that is designed measure the oxidation rate of thin films on the martian surface. We select films that are sensitive to particular types of oxidants, that represent key elements in the martian soil, or that emulate prebiotic materials. Concern that naturally arising martian oxidants may have destroyed evidence of ancient life on Mars was raised by the Viking mission in the 1970's. The possibility that oxidants may limit the viability of biologica1 habitats is particularly timely in light of recent suggestions of contemporary flowing water on Mars. By controlling the temperature of the films, as well as their exposure to dust and ultraviolet light, MAOS will discriminate among leading hypotheses for oxidant production. MAOS weighs 55 grams, fits in a 6 x 7 x 2 cm envelope, and uses 250 mW power. Much of the enabling technology was developed for the MOx experiment, lost on the Russian Mars '96 mission.
Zent, A. P.↗
Oxidation processes in magneto-optic and related materials
The surface oxidation processes of thin films of magneto-optic materials, such as the rare-earth transition metal alloys have been studied, starting in ultrahigh vacuum environments, using surface analysis techniques, as a way of modeling the oxidation processes which occur at the base of a defect in an overcoated material, at the instant of exposure to ambient environments. Materials examined have included FeTbCo alloys, as well as those same materials with low percentages of added elements, such a Ta, and their reactivities to both O2 and H2O compared with materials such as thin Fe films coated with ultrathin adlayers of Ti. The surface oxidation pathways for these materials is reviewed, and XPS data presented which indicates the type of oxides formed, and a critical region of Ta concentration which provides optimum protection.
Lee, Paul A.↗
Production of pulsed atomic oxygen beams via laser vaporization methods
The generation of energetic pulsed atomic oxygen beams by laser-driven evaporation of cryogenically frozen ozone/oxygen films and thin indium-tin oxide (ITO) films is reported. Mass spectroscopy is used in the mass and energy characterization of beams from the ozone/oxygen films, and a peak flux of 3 x 10 to the 20th/sq m per sec at 10 eV is found. Analysis of the time-of-flight data suggests that several processes contribute to the formation of the oxygen beam. Results show the absence of metastable states such as the 2p(3)3s(1)(5S) level of atomic oxygen blown-off from the ITO films. The present process has application to the study of the oxygen degradation problem of LEO materials.
Brinza, David E.↗
The chemisorption of H2O, HCOOH and CH3COOH on thin amorphous films of Al2O3
Investigation of the irreversible chemisorption of water, formic acid and acetic acid on a thin amorphous aluminum oxide film, using inelastic tunneling spectroscopy. All of the tunnel junctions employed were Al-Al2O3-Pb junctions with the adsorbate on the Al2O3 surface between the Al2O3 and the Pb electrode. The results obtained include the finding that all Al2O3 surfaces prepared by oxidation of Al have free CH groups present on them.
Lewis, B. F.↗