Search NASA⌕ Search

SEARCH · Search NASA

Results for “Carrier Transport”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

Pseudomorphic In0.15Ga0.85As/A10.15Ga0.85As modulation-doped field effect transistors (MODFET's) exhibiting extremely good dc characteristics have been successfully fabricated. dc transconductance in these strained-layer structures of 270 mS/mm was measured for 1-micron gate, normally-on devices at 300 K. Maximum drain current levels are 290 mA/mm, with excellent pinch-off and saturation characteristics. The transconductance increased to 360 mS/mm at 77 K while no persistent photoconductivity or drain collapse was observed. Preliminary microwave results indicate a 300-K current gain cutoff frequency of about 20 GHz. These results are equivalent to the best GaAs/AlGaAs MODFET results and are due in part to the improved transport properties and carrier confinement in the InGaAs quantum well.

Ketterson, A.↗
NASA NTRS1985

Superstructures and multijunction cells for high efficiency energy conversion

Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.

Wagner, M.↗
NASA NTRS1995

Airborne and Ground-Based Optical Depth Measurements in Canada and California During LITE

The NASA Ames Airborne Autotracking Sunphotometer was used to obtain correlative optical depth measurements in conjunction with LITE (Lidar-In-Space Technology Experiment) measurements during STS-64 Orbits 35, 66, and 82, The sunphotometer was operated on, board the NASA C-130 and obtained data in Canada a few hours prior to the shuttle overpass during Orbit 35. Because of the approximate two-hour slip in STS-64 launch time, all overpasses in Canada after Orbit 35 occurred after local sunset. Therefore, immediately following the Orbit 35 C-130 flight, the sunphotometer was removed from the C-130 and transported via commercial carrier to Southern California, where ground-based measurements were taken prior to and during the shuttle overflights of Orbits 66 and 82. Vertical profiles of optical depth spectra, as well as ground-based spectra, are shown. The spectra derived from measurements acquired during Orbits 66 and 82 are compared with analogous spectra derived from solar radiometer measurements obtained by the University of Arizona at various Southern California sites. Both data sets are available for comparison to nearby LITE measurements and for calculation of backscatter-to-extinction ratios, derivation of aerosol size distributions, and use in transmission-correction of LITE signal profiles.

Russell, Philip B.↗
NASA NTRS2001

Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

We study recently reported drain current I(sub d)-drain voltage V(sub d) characteristics of a carbon nanotube metal-semiconductor diode device with the gate voltage V(sub g) applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative V(sub g) blocked I(sub d) more effectively in the negative V(sub d) region, resulting in the rectifying I(sub d)-V(sub d) characteristics, and that (2) positive V(sub g) allowed I(sub d) in the both V(sub d) polarities, resulting in the non-rectifying characteristics. The negative V(sub d) was the Schottky reverse direction, judging from the negligible I(sub d) behavior for a wide region of -4 V (is less than) V(sub d) (is less than) 0 V, with V(sub g) = -4 V. Such negative V(sub g) would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (E(sub F)). With larger negative V(sub g), the experiment showed that the Schottky forward direction (V(sub d) (is greater than) 0) had a smaller turn-on voltage and the Schottky reverse direction (V(sub d) (is less than) 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when E(sub F) is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when E(sub F) is lowered.

Yamada, Toshishige↗
NASA NTRS2002

Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

We study recently reported drain current Id-drain voltage Vd characteristics of a carbon nanotube metal semiconductor diode device with the gate voltage Vg applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative Vg blocked Id more effectively in the negative Vd region, resulting in the rectifying Id-Vd characteristics, and that (2) positive Vg allowed Id in the both Vd polarities, resulting in the non-rectifying characteristics. The negative Vd was the Schottky reverse direction, judging from the negligible Id behavior for a wide region of -4 V less than Vd less than 0 V, with Vg = -4 V. Such negative Vg would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (EF). With larger negative Vg, the experiment showed that the Schottky forward direction (Vd greater than 0) had a smaller turn-on voltage and the Schottky reverse direction (Vd less than 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when EF is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when EF is lowered.

Yamada, Toshishige↗
NASA NTRS2005

A NASA Strategy for Leveraging Emerging Launch Vehicles for Routine, Small Payload Missions

Orbital flight opportunities for small payloads have always been few and far between, and then on February 1, 2002, the situation got worse. In the wake of the loss of the Columbia during STS- 107, changing NASA missions and priorities led to the termination of the Shuttle Small Payloads Projects, including Get-Away Special, Hitcbker, and Space Experiment Module. In spite of the limited opportunities, long queue, and restrictions associated with flying experiments on a man-rated transportation system; the carriers provided a sustained, high quality experiment services for education, science, and technology payloads, and was one of the few games in town. Attempts to establish routine opportunities aboard existing ELVs have been unsuccessful, as the cost-per-pound on small ELVs and conflicts with primary spacecraft on larger vehicles have proven prohibitive. Ths has led to a backlog of existing NASA-sponsored payloads and no prospects or plans for fbture opportunities within the NASA community. The prospects for breaking out of this paradigm appear promising as a result of NASA s partnership with DARPA in pursuit of low-cost, responsive small ELVs under the Falcon Program. Through this partnership several new small ELVs, providing 1000 lbs. to LEO will be demonstrated in less than two years that promise costs that are reasonable enough that NASA, DoD, and other sponsors can once again invest in small payload opportunities. Within NASA, planning has already begun. NASA will be populating one or more of the Falcon demonstration flights with small payloads that are already under development. To accommodate these experiments, Goddard s Wallops Flight Facility has been tasked to develop a multi-payload ejector (MPE) to accommodate the needs of these payloads. The MPE capabilities and design is described in detail in a separately submitted abstract. Beyond use of the demonstration flights however, Goddard has already begun developing strategies to leverage these new ELVs as elements of a larger system designed to provide routine, low-cost end-to-end services for small science, Exploration, and education payloads. The plan leverages the management approaches of the successful Sounding Rocket Program and Shuttle Small Payloads Projects. The strategy consists of using a systems implementation approach of elements, including 1) Falcon ELVs, 2) advanced launch site technologies and processes, 3) suite of experiment carriers accommodating different mission requirements, 4) streamlined integration and test operations, 5 ) experiment brokering and management, and 6) standardized, distributed payload operations. The envisioned suite of carriers includes the MPE, a standard interface experiment carrier, and potentially a reentry fieeflyer experiment carrier. Key to the success of this strategy is standard experiment interfaces within the carriers to limit mission- unique tasks, establishmg and managing a program of scheduled reoccurring flights rather than discrete missions, and streamlined, centralized implementation of the elements. These individual elements are each under development and Goddard will demonstrate the overall system strategy low-cost small payload missions on the initial Falcon demonstration launches from Wallops. goal is to show that this model should be converted to a sustained NASA program supporting science, technology, and education, with annual flight opportunities. The paper will define in detail the various elements of the overall program, as well as provide status, philosophy, and strategy for the program that will hopefully once-and-for-all provide low-cost, routine access to space for the small payloads community.

Underwood, Bruce E.↗
NASA NTRS2001

Radio astronomy with microspacecraft

A dynamic constellation of microspacecraft in lunar orbit can carry out valuable radio astronomy investigations in the frequency range of 30kHz--30MHz, a range that is difficult to explore from Earth. In contrast to the radio astronomy ivestigations that have flown on individual spacecraft, the four microspacecraft together with a carrier spacecraft, which transported them to lunar orbit, form an interferometer with far superior angular resolution. Use of microspacecraft allows the entire constellation to be launched with a Taurus-class vehicle. Also distinguishing this approach is that the Moon is used as needed to shield the constellation from RF interference from the Earth and Sun.

radio astronomy microspacecraft lunar orbit moon i↗
NASA NTRS2004

Semiconductor Lasers Containing Quantum Wells in Junctions

In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

Yang, Rui Q.↗
DOE OSTI2021

Doped gate dielectric materials

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

Cao, Yu↗
DOE OSTI2022

Separation of rare earth elements using supported membrane solvent extraction

A system and method for the recovery and separation of rare earth elements (REEs) are provided. The system and method include the supported membrane solvent extraction of REEs and the separation of light and heavy REEs that have been recovered from scrap permanent magnets and other electronic waste. In supported membrane solvent extraction, an organic phase consisting of an extractant and an organic solvent is immobilized in the pores of hollow fibers. An aqueous feed solution and a strip solution flow along the shell side and lumen side of the hollow fibers, respectively. The extractant functions as a carrier to selectively transport certain rare earth metal ions from the feed side to the strip side. The rare earth metals are concurrently back extracted in the strip solution, allowing processing to proceed continuously without equilibrium limitations.

Bhave, Ramesh R.↗
DOE OSTI2022

Doped gate dielectrics materials

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

Cao, Yu↗
DOE OSTI2022

Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites

Abstract The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead‐halide perovskite field‐effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor‐phase epitaxy technique that results in large‐area single‐crystalline cesium lead bromide (CsPbBr 3 ) films with excellent structural and surface properties, including atomically flat surface morphology, essentially free from defects and traps at the level relevant to device operation; ii) an extensive materials analysis of these films using a variety of thin‐film and surface probes certifying the chemical and structural quality of the material; and iii) the fabrication of nearly ideal (trap‐free) FETs with characteristics superior to any reported to date. These devices allow the investigation of the intrinsic FET and (gated) Hall‐effect carrier mobilities as functions of temperature. The intrinsic mobility is found to increase on cooling from ≈30 cm 2 V −1 s −1 at room temperature to ≈250 cm 2 V −1 s −1 at 50 K, revealing a band transport limited by phonon scattering. Establishing the intrinsic (phonon‐limited) mobility provides a solid test for theoretical descriptions of carrier transport in perovskites, reveals basic limits to the technology, and points to a path for future high‐performance perovskite electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Quantifying Charge Carrier Localization in PBTTT Using Thermoelectric and Spectroscopic Techniques

Chemically doped poly[2,5-bis(3-alkylthiophen-2-yl)thieno[3,2- b ]thiophene] (PBTTT) shows promise for many organic electronic applications, but rationalizing its charge transport properties is challenging because conjugated polymers are inhomogeneous, with convoluted optical and solid-state transport properties. Herein, we use the semilocalized transport (SLoT) model to quantify how the charge transport properties of PBTTT change as a function of iron(III) chloride (FeCl 3 ) doping level. We use the SLoT model to calculate fundamental transport parameters, including the carrier density needed for metal-like electrical conductivities and the position of the Fermi energy level with respect to the transport edge. We then contextualize these parameters with other polymer-dopant systems and previous PBTTT reports. Additionally, we use grazing incidence wide-angle X-ray scattering and spectroscopic ellipsometry techniques to better characterize inhomogeneity in PBTTT. Our analyses indicate that PBTTT obtains high electrical conductivities due to its quickly rising reduced Fermi energy level, and this rise is afforded by its locally high carrier densities in highly ordered microdomains. Ultimately, this report sets a benchmark for comparing transport properties across polymer-dopant-processing systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Generalized design principles for hydrodynamic electron transport in anisotropic metals

Interactions of charge carriers with lattice vibrations, or phonons, play a critical role in unconventional electronic transport of metals and semimetals. Recent observations of phonon-mediated collective electron flow in bulk semimetals, termed electron hydrodynamics, present new opportunities in the search for strong electron-electron interactions in high carrier density materials. Here we present the general transport signatures of such a second-order scattering mechanism, along with analytical limits at the Eliashberg level of theory. We study electronic transport, using ab initio calculations, in finite-size channels of semimetallic ZrSiS and TaAs 2 with and without topological band crossings, respectively. The order of magnitude separation between momentum-relaxing and momentum-conserving scattering length scales across a wide temperature range make both of them promising candidates for further experimental observation of electron hydrodynamics. More generally, our calculations suggest that the hydrodynamic transport regime does not, to first order, rely on the topological nature of the bands. Finally, we discuss general design principles guiding future search for hydrodynamic candidates, based on the analytical formulation and our ab initio predictions. Further, we find that systems with strong electron-phonon interactions, reduced electronic phase space, and suppressed phonon-phonon scattering at temperatures of interest are likely to feature hydrodynamic electron transport. We predict that layered and/or anisotropic semimetals composed of half-filled d shells and light group V/VI elements with lower crystal symmetry are promising candidates to observe hydrodynamic phenomena in the future.

36 MATERIALS SCIENCE↗
NASA NTRS1985

General purpose aft cargo carrier study, volume 1

The Space Transportation System (STS) documents were reviewed to determine their applicability to the Aft Cargo Carrier (ACC). The ACC requirements were developed to assure that the appropriate STS requirements were met. Payload accommodations/interface was discussed. The configuration, structural details, and subsystems of the ACC design are described. Mission analysis, planning schedules, and cost are summarized.

Source record↗
DOE OSTI2020

Negative Charge Confined Amine Carriers within the Nanowire Network for Stable and Efficient Membrane Carbon Capture

Membrane-based carbon dioxide (CO 2 ) capture has attracted great research interest owing to its potential for higher separation efficiency and lower energy consumption. However, it is still a challenging task to capture CO 2 with membrane from flue gas, especially under moderate-temperature and high-humidity conditions. Here, a stable CO 2 -selective membrane that can operate at temperatures up to 90 °C and under high humidity is reported. The positively charged amine carriers for CO 2 are confined within the negatively charged polymer modified carbon nanotube (CNT) network. In this structure, interconnected CNTs act as the framework for the selective layer and provide numerous nanochannels for gas transport. The negatively charged polymer ensures the carrier stability and further regulates the size of nanochannels in the CNT network. By virtue of carrier-facilitated transport, high CO 2 permeance (up to 3300 gas permeation units) and high CO 2 /N 2 selectivity (400) are achieved under simulated flue gas conditions. Moreover, theoretical calculations verify that the stable separation performance is due to the strong electrostatic interaction between the amine carriers and polymer matrix. The high performance and good stability indicate the great potential of this novel membrane structure for practical application in CO 2 capture.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Model for Collaboration among Carriers to Reduce Empty Container Truck Trips

In recent years, intermodal transport has become an increasingly attractive alternative to freight shippers. However, the current intermodal freight transport is not as efficient as it could be. Oftentimes an empty container needs to be transported from the empty container depot to the shipper, and conversely, an empty container needs to be transported from the receiver to the empty container depot. These empty container movements decrease the freight carrier’s profit, as well as increase traffic congestion, decrease roadway safety, and add unnecessary emissions to the environment. To this end, our study evaluates a potential collaboration strategy to be used by carriers for domestic intermodal freight transport based on an optimization approach to reduce the number of empty container trips. A binary integer-linear programming model is developed to determine each freight carrier’s optimal schedule while minimizing its operating cost. The model ensures that the cost for each carrier with collaboration is less than or equal to its cost without collaboration. It also ensures that average savings from the collaboration are shared equally among all participating carriers. Additionally, two stochastic models are provided to account for uncertainty in truck travel times. The proposed collaboration strategy is tested using empirical data and is demonstrated to be effective in meeting all of the shipment constraints.

42 ENGINEERING↗
NASA NTRS1975

Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices

The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

Chu, T. L.↗