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At least 343 records · Page 19

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DOE OSTI2025

What are grana in chloroplasts of vascular plants good for?

All plants and green algae contain stacked grana thylakoid membranes in their chloroplasts, underscoring an evolutionary pressure to maintain this unique structural feature. In addition, numerous studies have demonstrated that particular lateral and vertical dimensions of grana facilitate the function, regulation and repair of the photosynthetic machinery responsible for energy conversion. In this review, we present an updated overview of our understanding concerning the structure of grana thylakoids, the forces that contribute to their formation and their architectural dynamics. After establishing the structural foundation, we continue by reviewing the implications of grana formation on light harvesting, electron transport and protein maintenance in the thylakoid membranes of vascular plants. Regarding light harvesting, we discuss the implications of grana formation on energy spillover, macromolecular crowding, lateral versus vertical excitation energy transfer, and state transition. With respect to electron transport, we summarize recent findings regarding the functional connectivity of spatially separated photosystems facilitated by grana formation through small mobile electron carriers. We also explore how the dynamic responses of grana architecture regulate electron transport. Finally, we address how grana formation contributes to the organization of protein repair and biogenesis within thylakoid membranes.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2023

Optimizing the electron transport chain to sustainably improve photosynthesis

Abstract Genetically improving photosynthesis is a key strategy to boosting crop production to meet the rising demand for food and fuel by a rapidly growing global population in a warming climate. Many components of the photosynthetic apparatus have been targeted for genetic modification for improving photosynthesis. Successful translation of these modifications into increased plant productivity in fluctuating environments will depend on whether the electron transport chain (ETC) can support the increased electron transport rate without risking overreduction and photodamage. At present atmospheric conditions, the ETC appears suboptimal and will likely need to be modified to support proposed photosynthetic improvements and to maintain energy balance. Here, I derive photochemical equations to quantify the transport capacity and the corresponding reduction level based on the kinetics of redox reactions along the ETC. Using these theoretical equations and measurements from diverse C3/C4 species across environments, I identify several strategies that can simultaneously increase the transport capacity and decrease the reduction level of the ETC. These strategies include increasing the abundances of reaction centers, cytochrome b6f complexes, and mobile electron carriers, improving their redox kinetics, and decreasing the fraction of secondary quinone–nonreducing photosystem II reaction centers. I also shed light on several previously unexplained experimental findings regarding the physiological impacts of the abundances of the cytochrome b6f complex and plastoquinone. The model developed, and the insights generated from it facilitate the development of sustainable photosynthetic systems for greater crop yields.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2022

Spin singlet and quasiparticle excitations in cuprate superconductors

We followed step by step the transition from an antiferromagnetic (AFM) Mott insulator to a superconducting (SC) metal in the Bi 2 Sr 2 CaCu 2 O 8 + δ (Bi-2212) cuprate using electronic Raman scattering spectroscopy. This was achieved by tracking the doping dependence of the spin singlet excitation (SSE) originating from the AFM Mott insulator, the normal-state quasiparticle excitation related to the mobile charge carriers, and the Bogoliubov quasiparticles related to the SC gap. We show that the signature of the pseudogap phase which develops during this transition can be interpreted as the blocking of charge carriers by the enhancement of the AFM correlations as the temperature drops. We find that the energy scale of the pseudogap, Δ pg (p), closely follows that of the SSE, Δ sse (p) with doping p. The quasiparticle lifetime considerably increases with doping when the pseudogap collapses. We reveal that the maximum amplitude of the SC gap Δ$^{ma}_{sc}$ and the SC transition temperature T c are linked in an extended range of doping, such as Δ$^{ma}_{sc}$(p)∝Δ sse (p)T c (p). This relation suggests that the AFM correlations play a key role in the mechanism of superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Emergence of composite many-body exciton states in WS 2 and MoSe 2 monolayers

When doped with a high density of mobile charge carriers, monolayer transition-metal dichalcogenide (TMD) semiconductors can host new types of composite many-particle exciton states that do not exist in conventional semiconductors. Further, such multiparticle bound states arise when a photoexcited electron-hole pair couples not to just a single Fermi sea that is quantum-mechanically distinguishable (as in the case of conventional charged excitons or trions), but rather couples simultaneously to multiple Fermi seas, each having distinct spin and valley quantum numbers. Composite six-particle “hexciton” states were recently identified in electron-doped $WSe$ $2$ monolayers, but under suitable conditions they should also form in all other members of the monolayer TMD family. Here we present spectroscopic evidence demonstrating the emergence of many-body hexcitons in charge-tunable $WS$ $2$ monolayers (at the A-exciton) and $MoSe$ $2$ monolayers (at the B-exciton). The roles of distinguishability and carrier screening on the stability of hexcitons are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Emergent Dimer-Model Topological Order and Quasiparticle Excitations in Liquid Crystals: Combinatorial Vortex Lattices

Liquid crystals have proven to provide a versatile experimental and theoretical platform for studying topological objects such as vortices, skyrmions, and hopfions. In parallel, in hard condensed matter physics, the concept of topological phases and topological order has been introduced in the context of spin liquids to investigate emergent phenomena like quantum Hall effects and high-temperature superconductivity. Here, we bridge these two seemingly disparate perspectives on topology in physics. Combining experiments and simulations, we show how topological defects in liquid crystals can be used as versatile building blocks to create complex, highly degenerate topological phases, which we refer to as “combinatorial vortex lattices” (CVLs). CVLs exhibit extensive residual entropy and support locally stable quasiparticle excitations in the form of charge-conserving topological monopoles, which can act as mobile information carriers and be linked via Dirac strings. CVLs can be rewritten and reconfigured on demand, endowed with various symmetries, and modified through laser-induced topological surgery—an essential capability for information storage and retrieval. We demonstrate experimentally the realization, stability, and precise optical manipulation of CVLs, thus opening new avenues for understanding and technologically exploiting higher-hierarchy topology in liquid crystals and other ordered media.

36 MATERIALS SCIENCE↗

DOE OSTI2020

A heterogeneously integrated silicon photonic/lithium niobate travelling wave electro-optic modulator

Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.

42 ENGINEERING↗

DOE OSTI2020

Tailoring Charge Transport and Magnetism in Complex Half-Heusler/Full-Heusler Nanocomposites (Final Report)

This project exploits (1) the facile co-crystallization of the half-Heusler (HH) and full-Heusler (FH) structures, (2) the high coherency and stability of the HH/FH interfaces, and (3) the solid-state inter-conversion between HH and FH structures through local atomic diffusion, to investigate, for selected compositions of the HH and FH phases, the effect of size, dimensionality, dispersion and volume fraction of FH nanostructures on the electronic, phonon and magnetic behavior of the resulting HH/FH nanocomposites. Our goal is to identify and control key material and growth parameters governing phase formation, microstructural evolution, and to understand the mechanism by which these changes of the internal structure modify the material’s performance. To elucidate the mechanism by which the FH nanostructures regulate electronic charge transport and induce ferromagnetism within non-magnetic and magnetic semiconducting HH matrices, suitable series of HH/0D-FH and HH/2D-FH nanocomposites will be fabricated using synthesis conditions suggested by theoretical calculations of the formation energy and stability of various FH phases (varying M) in HH matrices with known chemical composition. The structure of the HH/FH interfaces (size, chemical composition, volume fraction and dispersion) will be investigated along with the evaluation of the electronic (carrier density, mobility, thermopower, electrical conductivity, effective mass), thermal and magnetic (susceptibility, magnetization etc.) properties of the resulting HH/FH nanocomposites.

36 MATERIALS SCIENCE↗

DOE OSTI2021

The Transport Properties of Quasi–One-Dimensional Ba 3 Co 2 O 6 (CO 3 ) 0.7

We have performed combined elastic neutron diffuse, electrical transport, specific heat, and thermal conductivity measurements on the quasi–one-dimensional Ba 3 Co 2 O 6 (CO 3 ) 0.7 single crystal to characterize its transport properties. A modulated superstructure of polyatomic CO 3 2- is formed, which not only interferes the electronic properties of this compound, but also reduces the thermal conductivity along the c-axis. Furthermore, a large magnetic entropy is observed to be contributed to the heat conduction. Our investigations reveal the influence of both structural and magnetic effects on its transport properties and suggest a theoretical improvement on the thermoelectric materials by building up superlattice with conducting ionic group.

36 MATERIALS SCIENCE↗

NASA NTRS1989

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Oh, J. E.↗

NASA NTRS1989

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Oh, J. E.↗

NASA NTRS1992

Temperature independent quantum well FET with delta channel doping

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.

Young, P. G.↗

NASA NTRS1993

Critical review of electrical conductivity measurements and charge distribution analysis of magnesium oxide

The electrical conductivity sigma of MgO single crystals shows a sharp increase at 500-800 C, in particular of sigma surface, generally attributed to surface contamination. Charge Distribution Analysis (CDA), a new technique providing information on fundamental properties that was previously unavailable, allows for the determination of surface charges, their sign and associated internal electric field. Data on 99.99% purity, arc-fusion grown MgO crystals show that mobile charge carriers start to appear in the bulk of the MgO crystals between 200 and 400 C when sigma (measured by conventional techniques) is in t he 10(exp -14) to 10(exp -16) /omega/cm range. Above 500 C, as sigma increases to 10(exp -6) to 10(exp -7)/omega/cm, more charges appear giving rise to a strong positive surface charge supported by a strong internal field. This indicates that charges are generated in the bulk and diffuse to the surface by an internally controlled process. On the basis of their positive sign they are identified as holes (defect electrons). Because of the low cation content of these very pure MgO crystals, theses holes cannnot be associated with transition metal impurties. Instead, they are associated with the O(2-) sublattice, e.g. consist of O(-) states or positive holes. This conclusion is supported by magnetic susceptibility data showing the appearance of 1000 +/- 500 ppm paramagnetic species between 200-500 C. The magnetic data are consistent with strongly coupled, diamagnetic O(-) pairs below 200-500 C, chemically equivalent to peroxy anions, O2(2-), and probably associated with cation vacancies in the MgO matrix. The formation of O2(2-) in arc-fusion grown MgO crystals is very unexpected because of the highly reducing growth conditions. Their presence implies an internal redox reaction involving dissolved 'water' by which OH(-) pairs convert to O2(2-) plus H2 molecules. This redox conversion is supported by mass spectroscopic measurements of the H2 release from highly OH(-)-doped, finely divided MgO and by wet-chemical analysis of its oxidant concentration.

Freund, Friedemann↗

NASA NTRS2002

Charge Generation and Propagation in Igneous Rocks

Various electrical phenomena have been reported prior to or concurrent with earthquakes such as resistivity changes, ground potentials, electromagnetic (EM), and luminous signals. Doubts have been raised as to whether some of these phenomena are real and indeed precursory. One of the reasons for uncertainty is that, despite decades of intense work, there is still no physically coherent model. Using low- to medium-velocity impacts to measure electrical signals with microsecond time resolution, it has now been observed that when dry gabbro and diorite cores are impacted at relatively low velocities, approximately 100 m/s, highly mobile charge carriers are generated in a small volume near the impact point. They spread through the rocks, causing electric potentials exceeding +400 mV, EM, and light emission. As the charge cloud spreads, the rock becomes momentarily conductive. When a dry granite block is impacted at higher velocity, approximately 1.5 km/s, the propagation of the P and S waves is registered through the transient piezoelectric response of quartz. After the sound waves have passed, the surface of the granite block becomes positively charged, suggesting the same charge carriers as observed during the low-velocity impact experiments, expanding from within the bulk. During the next 2-3 ms the surface potential oscillates, indicating pulses of electrons injected from ground and contact electrodes. The observations are consistent with positive holes, e.g., defect electrons in the O(2-) sublattice, traveling via the O 2p-dominated valence band of the silicate minerals. Before activation, the positive holes lay dormant in the form of electrically inactive positive hole pairs (PHP), chemically equivalent to peroxy links, O3X/OO\XO3, with X=Si(4+), Al(3+), etc. PHPs are introduced into the minerals by way of hydroxyl,O3X-OH, which all nominally anhydrous minerals incorporate when crystallizing in H2O-laden environments. The fact that positive holes can be activated by low-energy impacts, and their attendant sound waves, suggests that they can also be activated by microfracturing. Depending on where in the stressed rock volume the charge carriers are activated, they will form rapidly moving or fluctuating charge clouds that may account for earthquake-related electrical signals and EM emission. Wherever such charge clouds intersect the surface, high fields are expected, causing electric discharges and earthquake lights.

Freund, Friedemann↗

NASA NTRS2006

Dual Input AND Gate Fabricated From a Single Channel Poly (3-Hexylthiophene) Thin Film Field Effect Transistor

A regio-regular poly (3-hexylthiophene) (RRP3HT) thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or -10 V to each of the gate electrodes. When -10 V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The p-type carrier charge mobility was about 5x10(exp -4) per square centimeter per V-sec. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate non-planarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.

Pinto, N. J.↗

NASA NTRS2002

Synthesis and thermoeletric properties of Co(sub (1-x)ni)(sub X)P(sub 3) and CoAs((sub 3-x))P(sub x) skutterudites

Two types of promising phosphide skutterudite materials, Co(1-x)NixP3 (x= 0.025 to 0.70) and CoAs(3-x)Px (x=0.5 to 0.10), have been synthesized and their transport properties measured. These compounds were prepared using a direct synthesis technique. The samples were hot pressed and analyzed by electron microprobe microscopy. Hall Effect measurements were conducted to determine the electrical conductivity, mobility and carrier concentration. In addition, Seebeck voltage and thermal conductivity measurements were performed. The thermoelectric properties are presented anddiscussed as a function of temperature up to 1273 K. The thermal stability of the primary CoP3 was examined in a static vacuum under isothermal and in-gradient conditions. The effect of the presence of 1 atm of a cover gas on the material loss rate was analyzed.

thermoelectric↗

NASA NTRS1994

A Generic Telerobotics Architecture for C-5 Industrial Processes

The application of telerobotics to aircraft depot maintenance and remanufacturing is described and a telerobotics architecture for the application is discussed.

telerobotics↗

DOE OSTI2020

Optimization of the electron transport layer in quantum dot light-emitting devices

Quantum dot light-emitting devices have emerged as an important technology for display applications. Their emission is a result of recombination between positive and negative charge carriers that are transported through the hole and electron conductive layers, respectively. The selection of electron or hole transport materials in these devices not only demands the alignment of energy levels between the layers but also balances the flow of electrons and holes toward the recombination sites. In this work, we examine a method for device optimization through control of the charge carrier kinetics. We employ impedance spectroscopy to examine the mobility of charge carriers through each of the layers. The derived mobility values provide a path to estimate the transition time of each charge carrier toward the emitting layer. We suggest that an optimal device structure can be obtained when the transition times of both charge carriers toward the active layer are similar. Finally, we examine our hypothesis by focusing on thickness optimization of the electron transport layer.

36 MATERIALS SCIENCE↗

NASA NTRS2000

Charge Generation and Propagation in Igneous Rocks

Resistivity changes, ground potentials, electromagnetic (EM) and luminous signals prior to or during earthquakes have been reported, in addition to ground uplift and tilt, and to changes in the seismic wave propagation parameters. However, no physical model exists that ties these diverse phenomena together. Through time-resolved impacts experiments it has been observed that, when igneous rocks (gabbro, diorite, granite) are impacted at low velocities (approx. 100 m/sec), highly mobile electronic charge carriers are generated, spreading from a small volume near the impact point, causing electric potentials, EM and light emission. The rock becomes momentarily conductive. When impacted at higher velocities (approx. 1.5 km/sec), the propagation of the P and S waves is registered through the transient piezoelectric response of quartz. At the same time, the rock volume is filled with mobile charge carriers, and a positive surface potential is registered. During the next 1-2 msec the surface potential oscillates, due to electron injection from ground. These observations are consistent with positive holes, e.g. defect electrons in the O(2-) sublattice, that can travel via the O 2p-dominated valence band of the silicate minerals at the speed of a phonon-mediated charge transfer. Before activation, the positive hole charge carriers lay dormant in form of positive hole pairs, PHP, electrically inactive, chemically equivalent to peroxy links in the structures of constituent minerals. PHPs are introduced by way of hydroxyl (O3Si-OH) incorporated into nominally anhydrous minerals when they crystallize in water-laden environments. Given that sound waves of even relatively low intensity appear to cause PHPs dissociation, thus generating mobile positive holes, it is proposed that microfracturing during rock deformation cause PHP dissociation. Depending on where and how much the rock volume is stressed, the positive holes are expected to form fluctuating charge clouds in the earthquake source region that may account for earthquake-related electrical phenomena and the reported low frequency EM signals.

Freund, Friedemann↗