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Results for “ELECTRON RADIATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Electron acceleration and radiation signatures in loop coronal transients

It is proposed that in loop coronal transients an erupting loop moves away from the solar surface, with a velocity exceeding the local Alfven speed, pushing against the overlying magnetic fields and driving a shock in the front of the moving part of the loop. Lower hybrid waves are excited at the shock front and propagate radially toward the center of the loop with phase velocity along the magnetic field that exceeds the thermal velocity. The lower hybrid waves stochastically accelerate the tail of the electron distribution inside the loop. The manner in which the accelerated electrons are trapped in the moving loop are discussed, and their radiation signature is estimated. It is suggested that plasma radiation can explain the power observed in stationary and moving type IV bursts.

Vlahos, L.↗
NASA NTRS1996

Mobility of Electron in DNA Crystals by Laser Radiation

The mobility of electrons in laser radiated DNA is closed to the energy transfer and energy migration of a biological molecule. Arrhenius has studied the conductivity of the electrons in a biological molecule. But his result is far from the experimental result and meanwhile the relation between some parameters in his theory and the micro-quantities in DNA is not very clear. In this paper, we propose a new phonon model of electron mobility in DNA and use Lippman-Schwinger equation and S-matrix theory to study the mobility of electrons in DNA crystal. The result is relatively close to the experiment result and some parameters in Arrhenius theory are explained in our work.

Zhang, Kaixi↗
NASA NTRS1997

Process and Radiation Induced Defects in Electronic Materials and Devices

Process and radiation induced defects are characterized by a variety of electrical techniques, including capacitance-voltage measurements and charge pumping. Separation of defect type into stacking faults, displacement damage, oxide traps, interface states, etc. and their related causes are discussed. The defects are then related to effects on device parameters. Silicon MOS technology is emphasized. Several reviews of radiation effects and silicon processing exist.

Washington, Kenneth↗
NASA NTRS2001

Effects of Electrons, Protons, and Ultraviolet Radiation on Thermophysical Properties of Polymeric Films

The response of coated thin polymer films to ultraviolet (UV), electron and proton radiation simultaneously has been evaluated, with selected measurements in situ. Exposure was intended to simulate the electron and proton radiation environment near the Earth-Sun Lagrangian points (LI and L2) for five years and approximately 1000 equivalent solar hours (ESH) UV. These orbital environments are relevant to several potential missions such as the Next Generation Space Telescope and Geomagnetic Storm Warning, both of which may use thin film based structures for a sunshade and solar sail, respectively. The thin film candidates (12.5 micrometers thick) consisted of commercially available materials (Kapton(R) E, HN, Upilex(R) S, CP-1, CP-2, TOR-RC, and TOR-LMBP) that were metalized on one side with vapor deposited aluminum. All of the films are aromatic polyimides, with the exception of TORLMBP, which is a copoly(arylene ether benzimidazole). The films were exposed as second surface mirrors and the effects of the exposure on solar absorptance, thermal emittance, and tensile properties were determined. The in situ changes in solar absorptance from Kapton(R) and Upilex(R) were less than 0. 1, whereas the solar absorptance of TOR and CP films increased by more than 0.3 without saturating. The thermal emittance measurements also showed that the Kapton(R) and Upilex(R) materials increased only 1-2%, but the remaining materials increased 5-8%. Based on tensile property measurements made in air following the test, the failure stress of every type of polymer film decreased as a result of irradiation. The polymers most stable in reflectance, namely Upilex(R) and Kapton(R), were also the strongest in tension before irradiation, and they retained the greatest percentage of tensile strength. The films less stable in reflectance were also weaker in tension, and lost more tensile strength as a result of irradiation. The apparent failure strain (as a percent of original gage length) of every type of polymer film except TOR-RC, decreased as a result of irradiation.

Russell, Dennis A.↗
NASA NTRS2008

SiC vs. Si for High Radiation Environments: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4 x 10(exp 14) p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. A simple model is presented that allows calculation of the series resistance of the device and then relates the carrier removal rate to the changes in series resistance. Using this model to calculate the carrier removal rate in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.

Schottky barrier power diodes↗
NASA NTRS2001

Miniature Free-Flying Magnetometer Utilizing System-On-A-Chip Technology

Four Free-Flying Magnetometers (FFMs), developed at the Jet Propulsion Laboratory (JPL) for the Enstrophy mission, were successfully deployed from the payload of a sounding rocket launched from Poker Flats, Alaska on February 11, 1999. The FFMs functioned successfully by synchronously measuring the vector magnetic field at 4 points separate from the payload and at relative distances up to 3 km, and communicated their data, in bursts, to the ground. This is the first time synchronized in-situ multipoint measurements of the Earth's magnetic field utilizing miniature spin-stabilized "sensorcraft" have been performed. The data they provided have enabled, for the first time, the direct measure of field-aligned current density and are enabling new science by determining the fine-scale structure of the currents in the Earth's ionosphere involved in the production of aurora. These proof-of-concept "hockey puck" (80 mm diameter, 38 mm height, 250 gram mass) FFMs were built using off-the-shelf commercial, industrial, and military grade surface-mount electronic components. Radiation-hard electronics was not required for the Enstrophy mission's short sub-orbital flight. The successful design, implementation, and flight demonstration of this 1st generation FFM design has provided a solid base for further development of a 2nd generation FFM design for planetary science applications. A reliable ultra-miniature radiation-hard 2nd-generation FFM utilizing System-On-A-Chip (SOAC) technologies is proposed. This design would be targeted for long-term planetary missions to investigate magnetospheric field configurations in regions having small-scale structure and to separate spatial and temporal variations. A fleet of short-lived (expendable) FFMs would be deployed into a targeted region to gather multiprobe vector magnetic field data. The FFMs would be ejected from a parent spacecraft at a speed of a few m/sec and would cover spatial volumes of order tens of kilometers for times of order one hour. The parent spacecraft would carry a sufficient number of FFMs for multiple deployments. Additional information is contained in the original extended abstract.

Eyre, F. B.↗