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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
DOE OSTI2025

A Performance Model of In-Situ Techniques

The computational capacity of High-Performance Computing (HPC) systems increases continuously with the rapid development of central processing units (CPUs) and graphic processing units (GPUs), while the in-/output (IO) subsystem develops relatively slowly and storage capacity is also limited. Data-intensive applications, which are designed to leverage the high computational capacity of HPC resources, typically generate a considerable amount of data for post-processing visualizations and data analytics. The limited IO speed and storage space could lead to constraints in the actual performance of these applications and, therefore, scientific discovery. In-situ techniques, where data is visualized/analysed while still in memory rather than through disk, can contribute to alleviating these problems as they can reduce or even fully avoid data writing/reading through the IO subsystem to/from storage. However, the overall efficiency of insitu techniques crucially depends on the characteristics of both the in-situ tasks and the applications, and the resource distribution among them. Therefore, choosing the right in-situ approach (synchronous, asynchronous, or hybrid) and resource allocation is essential to minimize overhead and maximize the benefits of concurrent execution. In this paper, we present a performance model of in-situ techniques to find the most beneficial in-situ approach and the preferred resource configuration. We verify the high accuracy of our approach with over 6800 measurements and provide use cases with different applications.

Ju, Yi [Max Planck Computing and Data Facility, Ga↗
DOE OSTI2024

Grid-Forming Inverters for Stability Improvements in Bulk Power Systems with High Inverter-Based Resources Penetration

The grid-forming inverter (GFM) has been considered recently as a means to enhance grid stability in areas with Inverter-based Resources (IBRs) concentration. This paper assesses the potential improvements the GFM can bring to Bulk-power Systems (BPS) through two distinct studies. The first study was conducted on West Texas in ERCOT with presence of more than 35GW of IBRs, the Grid-Following (GFL) batteries were replaced with GFM batteries. The results demonstrate that the GFM significantly improved the voltage profile and active power injection during and after a fault. The second study focused on a local area within ERCOT grid. In this case, a battery operating as GFL within the local study area was replaced with a GFM battery. The findings clearly illustrate that GFM can strengthen the area and allow a higher IBRs power generation and a higher power export from the local study area.

Quedan, Amro↗
DOE OSTI2022

WfBench: Automated Generation of Scientific Workflow Benchmarks

The prevalence of scientific workflows with high computational demands calls for their execution on various distributed computing platforms, including large-scale leadership-class high-performance computing (HPC) clusters. To handle the deployment, monitoring, and optimization of workflow executions, many workflow systems have been developed over the past decade. There is a need for workflow benchmarks that can be used to evaluate the performance of workflow systems on current and future software stacks and hardware platforms.We present a generator of realistic workflow benchmark specifications that can be translated into benchmark code to be executed with current workflow systems. Our approach generates workflow tasks with arbitrary performance characteristics (CPU, memory, and I/O usage) and with realistic task dependency structures based on those seen in production workflows. We present experimental results that show that our approach generates benchmarks that are representative of production workflows, and conduct a case study to demonstrate the use and usefulness of our generated benchmarks to evaluate the performance of workflow systems under different configuration scenarios.

Coleman, Taina↗
DOE OSTI2020

Processing Full-Scale Square Kilometre Array Data on the Summit Supercomputer

This work presents a workflow for simulating and processing the full-scale low-frequency telescope data of the Square Kilometre Array (SKA) Phase 1. The SKA project will enter the construction phase soon, and once completed, it will be the world’s largest radio telescope and one of the world’s largest data generators. The authors used Summit to mimic an endto-end SKA workflow, simulating a dataset of a typical 6 hour observation and then processing that dataset with an imaging pipeline. This workflow was deployed and run on 4,560 compute nodes, and used 27,360 GPUs to generate 2.6 PB of data. This was the first time that radio astronomical data were processed at this scale. Results show that the workflow has the capability to process one of the key SKA science cases, an Epoch of Reionization observation. This analysis also helps reveal critical design factors for the next-generation radio telescopes and the required dedicated processing facilities.

Wang, Ruonan↗
DOE OSTI2024

Enabling Low-Overhead HT-HPC Workflows at Extreme Scale using GNU Parallel

GNU Parallel is a versatile and powerful tool for process parallelization widely used in scientific computing. This paper demonstrates its effective application in high-performance computing (HPC) environments, particularly focusing on its scalability and efficiency in executing large-scale high-throughput high-performance computing (HT-HPC) workflows. Through real-world examples, we highlight GNU Parallel’s performance across various HPC workloads, including GPU computing, container-based workloads, and node-local NVMe storage. Our results on two leading supercomputers, OLCF’s Frontier and NERSC’s Perlmutter, showcase GNU Parallel’s rapid process dispatching ability and its capacity to maintain low overhead even at extreme scales. We explore GNU Parallel’s application in massive parallel file transfers using a scheduled Data Transfer Node (DTN) cluster, emphasizing its broad utility in diverse scientific workflows. Beyond its direct application as a viable workflow manager, GNU Parallel can be employed in conjunction with other workflow systems as a "last-mile" parallelizing driver and as a quick prototyping tool to design and extract parallel profiles from application executions. We then argue that the potential for GNU Parallel to transform workflow management at extreme scales is substantial, paving the way for more efficient and effective scientific discoveries.

Maheshwari, Ketan↗
DOE OSTI2020

Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter

High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the reliability and safety of the gate driver for power semiconductor devices. This article focuses on the design of a high-voltage-insulated GDPS for the 10-kV silicon carbide MOSFET in medium-voltage (MV) application. Design considerations, including insulation scheme, high-voltage-insulated transformer design, and load voltage regulation scheme, are proposed. In addition, the performance of the secondary-side-regulated (SSR) GDPS and that of the primary-side-regulated (PSR) GDPS are compared for several aspects, including interwinding capacitance, load voltage regulation rate, conversion efficiency, and hardware complexity. Finally, an SSR GDPS and a PSR GDPS, with an insulation voltage of 20 kV, are built in the lab. Furthermore, the test results demonstrate that the PSR GDPS is more preferable because of lower interwinding capacitance, lower load voltage regulation rate, higher conversion efficiency, and simpler control circuit.

42 ENGINEERING↗
DOE OSTI2020

Customizable Scale-Out Key-Value Stores

Enterprise KV stores are often not well suited for HPC applications, and thus cumbersome end-to-end KV design customization is required to meet the needs of modern HPC applications. To this end, in this article we present bespoKV, an adaptive, extensible, and scale-out KV store framework. bespoKV decouples the KV store design into the control plane for distributed management and the data plane for local data store. For the control plane, bespoKVprovides pre-built modules, called controlets, supporting common distributed functionalities (e.g., replication, consistency, and topology) and their various combinations. This decoupling allows bespoKV to take a user-provided single-server KV store, called a datalet, and transparently enables a scalable and fault-tolerant distributed KV store service. The resulting distributed stores are also adaptive to consistency or topology requirement changes and can be easily extended for new types of services. Such specializations enable innovative uses of KV stores in HPC applications, especially for emerging applications that utilize KV-friendly workloads. We evaluate bespoKV in a local testbed as well as in a public cloud settings. Experiments show that bespoKV-enabled distributed KV stores scale horizontally to a large number of nodes, and performs comparably and sometimes 1.2× to 2.6× better than the state-of-the-art systems.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Flux Balancing Control of Ungapped Nanocrystalline Core-Based Transformer in Dual Active Bridge Converters

Transformer flux dc bias is a critical issue, impacting the reliable operation of dual active bridge (DAB) converters especially when ungapped high permeability nanocrystalline core is used. Steady state current dc bias can easily saturate ungapped nanocrystalline transformers, and it is even more dangerous in transient conditions. A dc bias model is proposed to analyze steady state dc bias in different load conditions. The magnetizing current detection is necessary for closed-loop control of dc bias; conductors' position is shown to impact sensor noise, and it is analyzed in detail. To deal with both steady state and transient dc bias, a unified flux balancing control (UFBC) is proposed introducing a predictive bias suppression (PBS) method with closed-loop flux balancing control (CFBC). With the proposed PBS, both primary/secondary current balance and flux balance can be achieved within one switching cycle using UFBC. Power characteristics and interaction between power control and flux balancing control of DAB converters are analyzed, and the CFBC needs to work in a low bandwidth due to sensor bandwidth limitation and interaction between power control and flux balancing control. Lastly, the UFBC is verified on a 300-kW cascaded DAB converter prototype.

42 ENGINEERING↗
DOE OSTI2020

A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter

Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. Furthermore, the proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm.

42 ENGINEERING↗
DOE OSTI2020

Modular Multilevel Converter (MMC) Modeling Considering Submodule Voltage Sensor Noise

The modular multilevel converter (MMC) is a popular topology in medium- and high-voltage applications, and many efforts have been spent on MMC modeling. However, the impact of submodule voltage sensor noise (SVSN), which becomes more severe due to increasing switching speed of power semiconductors and compact submodule design, has not been considered in conventional models. In this letter, the SVSN is introduced by coupling capacitances between the sensor and power stage in an MMC switching model. Furthermore, the SVSN impact is considered in an MMC average model based on derivation of the relationship between the SVSN and the duty cycle. Here, the proposed MMC switching model and average model considering the SVSN are validated by comparing simulations with experimental results in an MMC prototype using 10-kV SiC MOSFETS.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

High-Bandwidth Low-Inductance Current Shunt for Wide-Bandgap Devices Dynamic Characterization

High bandwidth sensors are required to measure the wide-bandgap devices' transient behavior because of their fast switching speed. In addition to high bandwidth, the current sensor must introduce little extra parasitic inductance to the switching power loop. The analysis of conventional shunt resistors shows the key to high bandwidth is the coaxial structure and its parasitic inductance is proportional to its transient heat energy rating. Additionally, by combining the structure of coaxial shunt resistor and alumina substrate surface mount thin film resistors, a novel surface mount coaxial shunt resistor is introduced. Experimental measurement verifies its capability of achieving very high bandwidth while introducing very low parasitic inductance. The design can achieve up to 2.23-GHz measurement bandwidth while keeping its parasitic inductance as low as 0.12 nH. Application in gallium nitride heterojunction-field-effect-transistors double pulse test shows it can faithfully capture the transient current waveform while introducing little interference to the switching behavior.

42 ENGINEERING↗
DOE OSTI2021

Instability Issue of Paralleled Dies in an SiC Power Module in Solid-State Circuit Breaker Applications

Paralleled dies in a power module could have instability issues during high current switching transients. Here, the instability is caused by the differential-mode oscillation among paralleled MOSFETs. Conventional analyses of paralleled MOSFETs’ stability are normally limited to a single operating point, which ignores the influences of the switching trajectory and nonlinear device parameters on stability. This article reveals that the switching trajectory can significantly influence parallel stability. The analysis is improved by solving eigenvalues of state-space modeling system matrices of all operating points that the switching trajectory goes through considering nonlinear device parameters. Higher voltage and current stresses result in greater real parts of complex eigenvalues, which explains why the paralleled MOSFETs are more unstable with higher voltage and current stresses. To improve stability in solid-state circuit breaker applications, we propose a method to manipulate the switching trajectory to avoid the unstable region where the conventional hard switching trajectory normally goes through. Experimental results show that the turn- off current capability can be increased from ~five times of rated current with the gate oscillation using the conventional turn- off trajectory to ~ten times of rated current without the gate oscillation using the optimal turn- off trajectory.

42 ENGINEERING↗