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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
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NASA NTRS1993

Laboratory experiments in integrated circuit fabrication

The objectives of the experiment are fourfold: to provide practical experience implementing the fundamental processes and technology associated with the science and art of integrated circuit (IC) fabrication; to afford the opportunity for the student to apply the theory associated with IC fabrication and semiconductor device operation; to motivate the student to exercise engineering decisions associated with fabricating integrated circuits; and to complement the theory of n-channel MOS and diffused devices that are presented in the classroom by actually fabricating and testing them. Therefore, a balance between theory and practice can be realized in the education of young engineers, whose education is often criticized as lacking sufficient design and practical content.

Jenkins, Thomas J.↗
NASA NTRS1992

Quartz/fused silica chip carriers

The primary objective of this research and development effort was to develop monolithic microwave integrated circuit (MMIC) packaging which will operate efficiently at millimeter-wave frequencies. The packages incorporated fused silica as the substrate material which was selected due to its favorable electrical properties and potential performance improvement over more conventional materials for Ka-band operation. The first step towards meeting this objective is to develop a package that meets standard mechanical and thermal requirements using fused silica and to be compatible with semiconductor devices operating up to at least 44 GHz. The second step is to modify the package design and add multilayer and multicavity capacity to allow for application specific integrated circuits (ASIC's) to control multiple phase shifters. The final step is to adapt the package design to a phased array module with integral radiating elements. The first task was a continuation of the SBIR Phase 1 work. Phase 1 identified fused silica as a viable substrate material by demonstrating various plating, machining, and adhesion properties. In Phase 2 Task 1, a package was designed and fabricated to validate these findings. Task 2 was to take the next step in packaging and fabricate a multilayer, multichip module (MCM). This package is the predecessor to the phased array module and demonstrates the ability to via fill, circuit print, laminate, and to form vertical interconnects. The final task was to build a phased array module. The radiating elements were to be incorporated into the package instead of connecting to it with wire or ribbon bonds.

Source record↗
NASA NTRS1993

A multigrid solver for the semiconductor equations

We present a multigrid solver for the exponential fitting method. The solver is applied to the current continuity equations of semiconductor device simulation in two dimensions. The exponential fitting method is based on a mixed finite element discretization using the lowest-order Raviart-Thomas triangular element. This discretization method yields a good approximation of front layers and guarantees current conservation. The corresponding stiffness matrix is an M-matrix. 'Standard' multigrid solvers, however, cannot be applied to the resulting system, as this is dominated by an unsymmetric part, which is due to the presence of strong convection in part of the domain. To overcome this difficulty, we explore the connection between Raviart-Thomas mixed methods and the nonconforming Crouzeix-Raviart finite element discretization. In this way we can construct nonstandard prolongation and restriction operators using easily computable weighted L(exp 2)-projections based on suitable quadrature rules and the upwind effects of the discretization. The resulting multigrid algorithm shows very good results, even for real-world problems and for locally refined grids.

Bachmann, Bernhard↗
NASA NTRS1994

Cryogenic probe station for use in automated microwave and noise figure measurements

A cryogenic measurement system capable of performing on-wafer RF testing of semiconductor devices and circuits has been developed. This 'CryoProbe Station' can wafer-probe devices and circuits at cryogenic temperatures, thus eliminating the need for wire bonds. The system operates under vacuum created by a sorption pump. It uses an open cycle cooling system that can be cooled with either liquid nitrogen or liquid helium. Presently, it can reach temperatures, as low as 80 K and 37 K for each of the coolants, respectively. The temperature can be raised using a heater and it is stabilized to within 0.2 K by use of a temperature controller. The CryoProbe Station features a 1 by 2 inch stage that can hold large circuits and calibration standards simultaneously. The system is used with a Hewlett Packard 8510C Automatic Network Analyzer (ANA) to obtain S-parameter data over the frequency range 0.045-26.5 GHz. S-parameter data on HEMT (high electron mobility transistors) devices has been obtained with this station. With the use of DEEMBED software from NIST, detailed transmission line studies have been performed. Although the CryoProbe Station is designed for frequencies up to 26.5 GHz, useful transmission line data has been obtained for frequencies as high as 40 GHz. The CryoProbe station has also been used with the ATN noise figure measurement system to perform automatic, temperature dependent noise figure measurements.

Taub, Susan R.↗
NASA NTRS1994

High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

Hoffman, Richard W., Jr.↗
NASA NTRS1995

Properties And Potential Applications Of NiAI

Report provides critical assessment of literature on nickel aluminide. High melting temperature and high thermal conductivity make NiAI useful as coating on turbine blades and vanes. Candidate for replacement of conventional superalloys in jet engines, and NiAI interconnections being embedded in semiconductor devices.

Noebe, Ronald D.↗
NASA NTRS1995

Sinterless Formation Of Contacts On Indium Phosphide

Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

Weizer, Victor G.↗
NASA NTRS1995

Measuring Traces Of Oxygen By Resonant Electron Attachment

Method of detecting trace amounts of oxygen based on dissociative attachment of electrons to oxygen molecules followed by measurement of resulting flux of negative oxygen ions in mass spectrometer. High sensitivity achieved in method by exploiting resonance in dissociative attachment of electrons to oxygen molecules: electron-attachment cross section rises to high peak at incident electron kinetic energy of 6.2 eV. Relative concentrations below 1 ppb detected. Devised to increase sensitivity of detection of oxygen in processing chambers in which oxygen regarded as contaminant; for example, chambers used in making semiconductor devices and in growing high-purity crystals.

Man, Kin Fung↗
NASA NTRS1996

Simultaneous Use Of Zr And Mg Anodes In XPS

Improved x-ray source for x-ray photoelectron spectroscopy (XPS) contains both zirconium anode with beryllium window and magnesium anode with aluminum window. Previously unresolvable peaks of electron-energy spectrum become resolvable. Developed specifically for use in analyzing distributions of chemical constituents in surface layers of specimens of 2219 aluminum alloy and in determining the depths of surface oxide layers and relative proportions of aluminum and oxide in layers. Also used to study chemical constituents of surface layers in other material systems - for example, thin oxide films on silicon-based semiconductor devices, oxide films on alloys, and surface layers affecting adhesion of paints or bonding materials.

Allgeyer, D. F.↗
NASA NTRS1996

Technology Directions for the 21st Century, volume 1

For several decades, semiconductor device density and performance have been doubling about every 18 months (Moore's Law). With present photolithography techniques, this rate can continue for only about another 10 years. Continued improvement will need to rely on newer technologies. Transition from the current micron range for transistor size to the nanometer range will permit Moore's Law to operate well beyond 10 years. The technologies that will enable this extension include: single-electron transistors; quantum well devices; spin transistors; and nanotechnology and molecular engineering. Continuation of Moore's Law will rely on huge capital investments for manufacture as well as on new technologies. Much will depend on the fortunes of Intel, the premier chip manufacturer, which, in turn, depend on the development of mass-market applications and volume sales for chips of higher and higher density. The technology drivers are seen by different forecasters to include video/multimedia applications, digital signal processing, and business automation. Moore's Law will affect NASA in the areas of communications and space technology by reducing size and power requirements for data processing and data fusion functions to be performed onboard spacecraft. In addition, NASA will have the opportunity to be a pioneering contributor to nanotechnology research without incurring huge expenses.

Crimi, Giles F.↗
NASA NTRS1996

A Parallel Multilevel Spectral Element Scheme

A parallel multilevel strategy is developed using spectral (p) finite elements. Hierarchic bases are particularly well suited since the element matrices and vectors are nested and the multilevel projections easiliy performed. Since the basis degree is used to specify the multigrid level, an EBE strategy is natural br the multilevel technique. Results are presented for two candidate nonlinear elliptic transport problems: the augmented drift-diffusion equations of semiconductor device modeling and the stream function-vorticity equations of incompressible fluid dynamics.

Davis, M. B.↗
NASA NTRS1996

Dopant Incorporation Efficiency in CVD Silicon Carbide Epilayers

In order to ensure reproducible and reliable SiC semiconductor device characteristics, controlled dopant incorporation must be accomplished. Some of the many factors which greatly influence dopant incorporation are the site-competition effect, SiC(0001) substrate polarity, substrate temperature, and the dopant-source reactor concentration. In this paper, dopant incorporation is considered and compared for various dopants in the context of dopant incorporation efficiency. By using secondary ion mass spectrometry (SIMS), the relative dopant incorporation efficiencies were calculated by dividing the SIMS determined dopant concentration in the resulting epitaxial layer by the intentional gas phase dopant concentration used during the SiC CVD. Specifically, the relative magnitudes of dopant incorporation efficiencies for nitrogen, phosphorus, and boron in 6H-SiC (0001) Si-face epitaxial layers are compared as a function of the site-competition effect and the dopant-source reactor concentrations. This serves as a first approximation for comparison of the relative 'doping potencies' of some common dopants used in SiC CVD epitaxial growth.

Larkin, D. J.↗
NASA NTRS1994

Ballistic-Electron-Emission-Microscopy of Strained Si(sub 1-x)Ge(sub x) Layers

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si(sub 1-x)Ge(sub x) alloys. Lifting of the degeneracy of the conduction-band minimum of Si(sub 1-x)Ge(sub x), due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si(sub 1-x)Ge(sub x) layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based oil pseudomorphic Si(sub 1-x)Ge(sub x)/Si material systems.

Bell, L. D.↗
NASA NTRS1999

Nano-Satellite Avionics

Abstract NASA's Goddard Space Flight Center (GSFC) is currently developing a new class of satellites called the nano-satellite (nano-sat). A major objective of this development effort is to provide the technology required to enable a constellation of tens to hundreds of nano-satellites to make both remote and in-situ measurements from space. The Nano-sat will be a spacecraft weighing a maximum of 10 kg, including the propellant mass, and producing at least 5 Watts of power to operate the spacecraft. The electronics are required to survive a total radiation dose rate of 100 krads for a mission lifetime of two years. There are many unique challenges that must be met in order to develop the avionics for such a spacecraft. The first challenge is to develop an architecture that will operate on the allotted 5 Watts and meet the diverging requirements of multiple missions. This architecture will need to incorporate a multitude of new advanced microelectronic technologies. The microelectronics developed must be a modular and scalable packaging of technology to solve the problem of developing a solution to both reduce cost and meet the requirements of various missions. This development will utilize the most cost effective approach, whether infusing commercially driven semiconductor devices into spacecraft applications or partnering with industry to design and develop low cost, low power, low mass, and high capacity data processing devices. This paper will discuss the nano-sat architecture and the major technologies that will be developed. The major technologies that will be covered include: (1) Light weight Low Power Electronics Packaging, (2) Radiation Hard/Tolerant, Low Power Processing Platforms, (3) High capacity Low Power Memory Systems (4) Radiation Hard reconfiguragble field programmable gate array (rFPGA)

Culver, Harry↗
NASA NTRS1999

An Acoustic Charge Transport Imager for High Definition Television

This project, over its term, included funding to a variety of companies and organizations. In addition to Georgia Tech these included Florida Atlantic University with Dr. William E. Glenn as the P.I., Kodak with Mr. Mike Richardson as the P.I. and M.I.T./Polaroid with Dr. Richard Solomon as the P.I. The focus of the work conducted by these organizations was the development of camera hardware for High Definition Television (HDTV). The focus of the research at Georgia Tech was the development of new semiconductor technology to achieve a next generation solid state imager chip that would operate at a high frame rate (I 70 frames per second), operate at low light levels (via the use of avalanche photodiodes as the detector element) and contain 2 million pixels. The actual cost required to create this new semiconductor technology was probably at least 5 or 6 times the investment made under this program and hence we fell short of achieving this rather grand goal. We did, however, produce a number of spin-off technologies as a result of our efforts. These include, among others, improved avalanche photodiode structures, significant advancement of the state of understanding of ZnO/GaAs structures and significant contributions to the analysis of general GaAs semiconductor devices and the design of Surface Acoustic Wave resonator filters for wireless communication. More of these will be described in the report. The work conducted at the partner sites resulted in the development of 4 prototype HDTV cameras. The HDTV camera developed by Kodak uses the Kodak KAI-2091M high- definition monochrome image sensor. This progressively-scanned charge-coupled device (CCD) can operate at video frame rates and has 9 gm square pixels. The photosensitive area has a 16:9 aspect ratio and is consistent with the "Common Image Format" (CIF). It features an active image area of 1928 horizontal by 1084 vertical pixels and has a 55% fill factor. The camera is designed to operate in continuous mode with an output data rate of 5MHz, which gives a maximum frame rate of 4 frames per second. The MIT/Polaroid group developed two cameras under this program. The cameras have effectively four times the current video spatial resolution and at 60 frames per second are double the normal video frame rate.

Hunt, William D.↗
NASA NTRS1997

A Smoothed Boundary Condition for Reducing Nonphysical Field Effects

In this paper, we examine the problem associated with abruptly mixing boundary conditions in the context of a two-dimensional semiconductor device simulator. Explicitly, this paper addresses the transition between an ohmic-type Dirichlet condition and a passivated Neumann boundary. In the traditional setting, the details or the transition between the two boundary types are not addressed and an abrupt transition is assumed. Subsequently, the calculated observables (most notably the potential) exhibit discontinuous derivatives near the surface at the point where the boundary type switches. This paper proposes an alternative condition which models the progression between the two boundary types through the use of a finite length, smoothed boundary whereby the numerical discontinuities are eliminated. The physical and mathematical basis for this smoothed boundary condition is discussed and examples of the technique's implementation given. It is found that the proposed boundary condition is numerically efficient and can be implemented in pre-existing device simulators with relative ease.

Smith, Arlynn W.↗
NASA NTRS2000

Development of Electronics for Low Temperature Space Missions

The operation of electronic systems at cryogenic temperatures is anticipated for many future NASA space missions such as deep space probes and planetary surface exploration. For example, an unheated interplanetary probe launched to explore the rings of Saturn would reach an average temperature near Saturn of about -183 C. In addition to surviving the deep space harsh environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing payload development and launch costs. Terrestrial applications where components and systems must operate in low temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. An on-going research and development program on low temperature electronics at the NASA Glenn Research Center focuses on the development of efficient power systems capable of surviving and exploiting the advantages of low temperature environments. Inhouse efforts include the design, fabrication, and characterization of low temperature power systems and the development of supporting technologies for low temperature operations, such as dielectric and insulating materials, semiconductor devices, passive power components, opto-electronic devices, as well as packaging and integration of the developed components into prototype flight hardware.

Patterson, Richard L.↗
NASA NTRS1998

A Fresh Look at Coupled-Oscillator Spatial Power Combining

Quasi-optical oscillators were proposed a little more than ten years ago as a means of developing the power levels needed for applications at millimeter frequencies using large numbers of individual semiconductor devices each of which produces only a modest amount of power [J.W. Mink, IEEE Trans. MTT., vol. 34, p. 273, 19861. An operating system was demonstrated soon after [Z.B. Popovic et. al, Int. J. Infrared and Millimeter Waves, v. 9, p. 647, 1988] in the form of a so-called grid oscillator. This device constituted a rectangular array of oscillating devices that are mutually coupled so that they oscillator coherently. The interconnecting lines in one direction serve as radiators so that the oscillators radiate directly, and the radiated fields add. Subsequently, coupled oscillators using resonant transmission line lengths was demonstrated by Mortazawi and Itoh [IEEE Trans. MTT., vol. 38, p. 86,1990). In recent work, coupled-oscillator power combiners have received less attention, with amplifier/combiners receiving more attention. Specific weaknesses of spatial-combining oscillators have motivated this transition. Namely, the oscillators employ low-Q resonators (resulting in low signal quality) and no clear means of modulation has been identified until recently. In this presentation, we review coupled-oscillator combiners in broad terms, indicating the features that make particular systems viable. We indicate how these features can be reconciled to functional requirements for system applications. Comparisons are drawn between two approaches to obtain mutual coupling: One employs low-Q oscillator circuits at each site, with concomitantly high propensity for the oscillators to couple. The other approach employs moderate-Q oscillators at each site with the concomitant requirement to tune the oscillators so that they share a range of frequencies over which they can couple and lock. In either case, precise frequency control and modulation can be achieved through locking to an external frequency source that ensures high quality signals. A recent development in coupled-oscillator arrays provides a means for beam-steering the radiation field of coupled oscillators through de-tuning of the edge elements in the array. This detuning introduces a progressive phase shift across the oscillator array. This 0 suggests architectures that can replace the functionality of a phased array without the cost 0 incurred by phase shifters. A comprehensive theory of the phase interactions among devices in such arrays is under development [e.g., Pogorzelski, York, and Maccarini, 1998 AP-S International Symposium, Atlanta, GA. June, 19981.

Pearson, L.W.↗