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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Numerical Modeling of the Effects of Coating Plates on Terminal Ballistic Performance

This report deals with the development and evaluation of a numerical model to examine applied coating to a metal substrate subjected to a ballistic impact. The numerical model will be used to examine the benefit of the coating in resisting penetration due to the impact. For a detailed examination the Retch-Ipson curve is used as a metric. The numerical data is plotted and then fit to the Retch-Ipson curve and error calculations are used to compare the difference between the numerical output and the experimental data. This initial study is an examination of a few shortcomings of the standard material models used, and demonstrate the future work that is needed to understand the ballistic behavior of materials.

36 MATERIALS SCIENCE↗
DOE OSTI2026

A comprehensive framework for validating simulation models of power system equipment using terminal measurements

Accurate simulation of power-plants is essential to the planning and operation of modern power grids. The current methods used to periodically check power-plant simulation models have many open questions about their limitations and accuracy. The research in this project explored using Monte-Carlo Experimentation (MCE) as a means for answering these important questions.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation

In this work, we demonstrate a vertical 2T-nC FeRAM with a back-end-of-line (BEOL) read transistor (T R ) for 4F 2 string and propose a selector design to mitigate polarization disturb in passive capacitor crossbar arrays. Key contributions include: 1) successful integration and operation composed of a Si MOSFET write transistor (T W ), 3-layer cylindrical ferroelectric capacitors, and Si-doped In 2 O 3 BEOL T R , demonstrating the feasibility of 4F 2 2T−nC string; 2) introducing nonlinearity into the capacitor stack to suppress ferroelectric voltage drop under inhibition biases while maintaining sufficient write voltage, reducing disturbance; 3)modeling and experimental validation of inserting a metalsemiconductor (a-Si)-metal (MSM) selector into the capacitor in mitigating the disturb, particularly achieving 9x reduction of disturb after 10 6 cycles in the V W /2 scheme.

42 ENGINEERING↗