Holographic microscopy for the determination of failure mechanisms in monolithic circuits
Holographic microscopy for performance prediction and quality control of semiconductor devices and integrated circuits
Van Ligten, R. F.↗
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Voltage controlled monolithic oscillator Final report, Jun. 1967 - Mar. 1969
Solid state voltage controlled oscillator using two silicon integrated circuit chips and thin film resistor chip
Colvson, L. V.↗
Feasibility study and analysis of the use of computers to prepare monolithic integrated circuits for GSE Final report
Computerized design of photographic masks for integrated circuit fabrication
Source record↗
Validation of monolithic circuit test standards through an integrated COS/MOS multiplexer Final report, 25 Jun. 1968 - 31 Dec. 1969
Validating test standards for process control and testing of integrated circuits
Feryszka, R.↗
Development of chip passivated monolithic complementary MISFET circuits with beam leads
Fabrication method is described for alumina passivated silicon MISFET arrays. Technique involves total passivation beam-lead approach and provides completely sealed chip with double level interconnect capability. Refractory metal alloy is used to form interconnect system and obtain metal contacts that withstand temperatures of 873 K for short periods of time.
Ragonese, L. J.↗
Monolithic parallel processor, phase 1A
A four-bit parallel processor LSI array was designed and fabricated using COS/MOS integrated-circuit technology. The design features include the provision for interconnecting groups of parallel-processor chips to form an expanded processor of any desired word length. This 800-transistor "computer on a chip' circuit has the logic capability of a medium-size, medium-speed, general-purpose computer suitable for sophisticated scientific data processing. The ability to fabricate this device repetitively was demonstrated.
Source record↗
Development of chip passivated monolithic complementary MISFET circuits with beam leads
The results are presented of a program to demonstrate the processes for fabricating complementary MISFET beam-leaded circuits, which, potentially, are comparable in quality to available bipolar beam-lead chips that use silicon nitride passivation in conjunction with a platinum-titanium-gold metal system. Materials and techniques, different from the bipolar case, were used in order to be more compatible with the special requirements of fully passivated complementary MISFET devices. Two types of circuits were designed and fabricated, a D-flip-flop and a three-input NOR/NAND gate. Fifty beam-leaded chips of each type were constructed. A quality and reliability assurance program was performed to identify failure mechanisms. Sample tests and inspections (including destructive) were developed to measure the physical characteristics of the circuits.
Ragonese, L. J.↗
Transparent laminated and monolithic windows
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Schwartz, S.↗
Monolithic four-quadrant multiplier
Integrated configuration for "differential" sequential processor is less susceptible to noise than one using discrete components. Accuracy of version is unaffected by sample-and-hold (S/H) acquisition speed, S/H droop rate, and stray pickup by separate card-mounted parts.
Lampe, D. R.↗
Surface acoustic waves/silicon monolithic sensor processor
Progress is reported in the creation of a two dimensional Fourier transformer for optical images based on the zinc oxide on silicon technology. The sputtering of zinc oxide films using a micro etch system and the possibility of a spray-on technique based on zinc chloride dissolved in alcohol solution are discussed. Refinements to techniques for making platinum silicide Schottky barrier junctions essential for constructing the ultimate convolver structure are described.
Kowel, S. T.↗
Infrared-Responsive Monolithic MOS Circuit
Lead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.
Jhabvala, Muzban D.↗
A monolithic lead sulfide-silicon MOS integrated-circuit structure
A technique is developed for directly integrating infrared photoconductive PbS detector material with MOS transistors. A layer of chromium, instead of aluminum, is deposited followed by a gold deposition in order to ensure device survival during the chemical deposition of the PbS. Among other devices, a structure was fabricated and evaluated in which the PbS was directly coupled to the gate of a PMOS. The external bias, load, and source resistors were connected and the circuit was operated as a source-follower amplifier. Radiometric evaluations were performed on a variety of different MOSFETs of different geometry. In addition, various detector elements were simultaneously fabricated to demonstrate small element capability, and it was shown that elements of 25 x 25 microns could easily be fabricated. Results of room temperature evaluations using a filtered 700 K black body source yielded a detectivity at peak wavelength of 10 to the 11th cm (root Hz)/W at 100 Hz chopping frequency.
Jhabvala, M. D.↗
Control of mutual phase locking of monolithically integrated semiconductor lasers
The degree of phase locking between the individual laser apertures is the major issue in phase-locked laser arrays. A description is presented of a series of experiments in which the mutual coherence of two laser apertures is characterized by measuring the visibility of the far-field interference fringes. Attention is given to an approach which makes it possible to control continuously the degree of coherence by means of a separate contact configuration. An investigation was conducted of the far-field radiation patterns of pairs of lasers obtained under various conditions. The results of the present study demonstrate the feasibility of controlling the mutual phase locking between semiconductor lasers by varying the gain distribution between their pumped stripes.
Kapon, E.↗
Surface acoustic wave/silicon monolithic sensor/processor
A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.
Kowel, S. T.↗
Monolithic silicon bolometers
A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.
Downey, P. M.↗
Configuration study for a 30 GHz monolithic receive array, volume 1
Gregorian, Cassegrain, and single reflector systems were analyzed in configuration studies for communications satellite receive antennas. Parametric design and performance curves were generated. A preliminary design of each reflector/feed system was derived including radiating elements, beam-former network, beamsteering system, and MMIC module architecture. Performance estimates and component requirements were developed for each design. A recommended design was selected for both the scanning beam and the fixed beam case. Detailed design and performance analysis results are presented for the selected Cassegrain configurations. The final design point is characterized in detail and performance measures evaluated in terms of gain, sidelobe level, noise figure, carrier-to-interference ratio, prime power, and beamsteering. The effects of mutual coupling and excitation errors (including phase and amplitude quantization errors) are evaluated. Mechanical assembly drawings are given for the final design point. Thermal design requirements are addressed in the mechanical design.
Nester, W. H.↗
Monolithic, unidirectional single-mode Nd:YAG ring laser
A new solid-state laser has been designed which achieves high single-mode output power by using a unidirectional nonplanar resonator constructed from a single Nd:YAG crystal. When placed in a magnetic field, the laser provides a pump-limited, single-axial-mode output of 163 mW at 1064 nm. The laser has been specifically developed as an oscillator for a long-range coherent Doppler anemometer. Other applications include coherent communications, coherent optical radar, and inertial rotation sensing.
Kane, T. J.↗
Monolithic Isolated Single-Mode Ring Laser
MISER uses four-sided ring to lase nonreciprocally. Laser concept provides very-compact, efficient, and stable source of coherent radiation. Lasers of single, very-stable frequency desirable for number of purposes. Frequency stability makes possible coherent detection of laser radiation with low-bandwidth detector, useful for communications. Allows very-high-resolution spectroscopy. Any application where desired to use laser in way microwaves used traditionally enhanced if frequency very stable.
Kane, T. J.↗