SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Strain sensors that can be switched on and off were fabricated from p-channel IGFET on thin filament n-type silicon crystals with silicon dioxide layer sputtered over transistor for passivation. Applications include integration with microelectronic circuits for multiplexing.
Explore the source record for details and available documents.
The derivation of the circuitry of a field effect transistor (FET) model, the procedure for adapting the model to automated statistical analysis program (ASAP), and the results of applying ASAP on this model are described.
The development of a push-pull frequency-modulated oscillator employing field-effect transistors is described. The advantages of field-effect transistors for use in a frequency-stable oscillator are presented. Linearization of the frequency deviation was accomplished by utilizing the square-law characteristic of an FET used as a modulating amplifier. The push-pull oscillator model produced a linear frequency deviation of more than 10 MHz at a center frequency of approximately 100 MHz. Output power is within 0.6 db of a nominal +8.5 dBm over the desired frequency range, and the modulation bandwidth is dc to 10 MHz. Frequency variation with temperature after compensation with a negative-temperature-coefficient capacitor is within + or - 0.05% from 0 to 60 C.
Field-effect transistors, with their high impedance and low noise, can effectively measure very low currents. To bring the FET up to electrometer standards (so that it can measure currents of, say, 10 (sup -13) amp) the designer must know where the noise is and what to do about it.
Miniaturized circuit improves measurement of radiation dose absorbed in a scintillation crystal. The temperature coefficient of the field-effect transistor gate-source voltage in the isolation amplifier can be readily controlled.
Filter is devised by using insulated-gate field-effect transistors for remote control. Transistors are P-channel devices that operate in enhancement mode and are commercially available.
A full-wave modulator-demodulator apparatus is described including an operational amplifier having a first input terminal coupled to a circuit input terminal, and a second input terminal alternately coupled to the circuit input terminal. A circuit is ground by a switching circuit responsive to a phase reference signal and the operational amplifier is alternately switched between a non-inverting mode and an inverting mode. The switching circuit includes three field-effect transistors operatively associated to provide the desired switching function in response to an alternating reference signal of the same frequency as an AC input signal applied to the circuit input terminal.
A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.
A jet aircraft noise and sonic boom measuring device which converts sound pressure into electric current is described. An electric current proportional to the sound pressure level at a condenser microphone is produced and transmitted over a cable, amplified by a zero drive amplifier and recorded on magnetic tape. The converter is comprised of a local oscillator, a dual-gate field-effect transistor (FET) mixer and a voltage regulator/impedance translator. A carrier voltage that is applied to one of the gates of the FET mixer is generated by the local oscillator. The microphone signal is mixed with the carrier to produce an electrical current at the frequency of vibration of the microphone diaphragm by the FET mixer. The voltage of the local oscillator and mixer stages is regulated, the carrier at the output is eliminated, and a low output impedance at the cable terminals is provided by the voltage regulator/impedance translator.
Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.
Improved instrumentation suitable for measuring aircraft noise and sonic booms is described. An electric current proportional to the sound pressure level at a condenser microphone is produced and transmitted over a cable and amplified by a zero drive amplifier. The converter consists of a local oscillator, a dual-gate field-effect transistor mixer, and a voltage regulator/impedance translator. The improvements include automatic tuning compensation against changes in static microphone capacitance and means for providing a remote electrical calibration capability.
An oriented piezoelectric film incorporated in the insulator region of a silicon insulated-gate field-effect transistor (FET) results in a sensitive high-frequency strain transducer. Theory governing the transducer properties of the piezoelectric insulator FET transducer is presented. Equations are developed which relate the drain current of the device to induced polarizations of the piezoelectric layer. The highest frequency of surface strains to which the FET transducer can respond is determined by the FET frequency response - ultimately by the channel transit time. This frequency can extend to the GHz range. The low-frequency response to applied strain is determined by the dielectric relaxation frequency of the piezoelectric layer.
There are a number of applications in which linear noise models are inappropriate. In the paper, the use of bilinear noise models in circuits and devices is considered. Several physical problems are studied in this framework. These include circuits involving varying parameters (such as variable resistance circuits constructed using field-effect transistors), the effect of switching jitter on sampled data system performance and communication systems involving voltage-controlled oscillators and phase-lock loops. In addition, several types of analytical techniques for stochastic bilinear systems are considered. Specifically, the moment equations of Brockett for bilinear systems driven by white noise are discussed, and closed-form expressions for certain bilinear systems (those that evolve an Abelian or solvable Lie groups) driven by white or colored noise are derived. In addition, an approximate statistical technique involving the use of harmonic expansions is described.
Circuit allows minimization of thermal-drift errors, low power consumption, operation over wide dynamic range, improved sensitivity and stability with metaloxide-semiconductor field-effect transistor sensors.
Active voltage divider applies different logic signals to field-effect transistor switches to generate various voltage levels at output. Circuit is compact and reduces errors from drifting component values.
Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.
Coverings for solar cells are evaluated conveniently with alumina ceramic circuit board holding three pairs of cells and three field-effect translator (FET) chips overlaid with candidate encapsulant. With fixture, solar cells and encapsulants are exposed to Sunlight and weather, either natural or artificial, to provide pertinent measurement and performance data.