An investigation of superconductive techniques for broadband traveling-wave masers
Multicoil superconducting magnets for broadband traveling wave masers
BROADBAND AMPLIFIER↗
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A study of scattering, production, and stimulated emission of sound by vortex flows
The basic theory of aeroacoustics of homentropic fluid media is applied to the problems of sound scattering, production, and stimulated emission. A general theory of scattering from low speed three-dimensional vortex flows is presented. Specific results are given for the horseshoe vortex and vortex ring. The noise of an elementary corotating vortex pair in various flows is calculated. It is shown that a potential flow and shear flow can substantially increase the basic pair noise. Small reverse shears can annihilate vortex pairs and eliminate the pair noise mechanism. The pair results are used to explain qualitatively the operation of noise suppression devices. The stimulated emission of a single vortex pair and four and six vortex arrays is demonstrated. The results for six vortices illustrate how external pure tones can amplify the broadband noise of a jet in agreement with recent experimental evidence.
Yates, J. E.↗
Broadband coplanar-waveguide-based impedance-transformed Josephson parametric amplifier
Quantum-limited Josephson parametric amplifiers play a pivotal role in advancing the field of circuit quantum electrodynamics by enabling the fast and high-fidelity measurement of weak microwave signals. Therefore, it is necessary to develop robust parametric amplifiers with low noise, broad bandwidth, and reduced design complexity for microwave detection. However, current broadband parametric amplifiers either have degraded noise performance or rely on complex designs. Here, we present a device based on the broadband impedance-transformed Josephson parametric amplifier that integrates a hornlike coplanar waveguide transmission line, which significantly decreases the design and fabrication complexity while keeping comparable performance. The device shows an instantaneous bandwidth of 700 (200) MHz for 15 (20) dB gain with an average input saturation power of − 110 dBm and near quantum-limited added noise. The operating frequency can be tuned over 1.4 GHz using an external flux bias. We further demonstrate the negligible backaction from our device on a transmon qubit. The amplification performance and simplicity of our device promise its wide adaptation in quantum metrology, quantum communication, and quantum information processing. Published by the American Physical Society 2024
Qing, Bingcheng (ORCID:0000000345227017)↗
Broadband spectral combining of three pulse-shaped fiber amplifiers with 42fs compressed pulse duration
We demonstrate ultra-broadband spectral combining of ultrashort pulses from Yb-doped fiber amplifiers, with coherently spectrally synthesized pulse shaping, to achieve tens-of-fs pulses. This method can fully compensate for gain narrowing and high order dispersion over broad bandwidth. We produce 42fs pulses by spectrally synthesizing three chirped-pulse fiber amplifiers and two programmable pulse shapers across an 80nm overall bandwidth. To the best of our knowledge, this is the shortest pulse duration achieved from a spectrally combined fiber system at one-micron wavelength. This work provides a path toward high-energy, tens-of-fs fiber chirped-pulse amplification systems.
43 PARTICLE ACCELERATORS↗
An efficient, broad-band, switching-mode amplifier with isolated output, part 2 Annual report
Breadboard model of broadband pulse width modulated amplifier
Dunmyer, W. D.↗
32-GHz cryogenically cooled HEMT low-noise amplifiers
The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz high electron mobility transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.
Duh, K. H. George↗
On 32-GHz cryogenically cooled HEMT low-noise amplifiers
The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz High Electron Mobility Transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 K to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.
Bautista, J. J.↗
Broadband linearisation of high-efficiency power amplifiers
A feedforward-based amplifier linearization technique is presented which is capable of yielding significant improvements in both linearity and power efficiency over conventional amplifier classes (e.g. class-A or class-AB). Theoretical and practical results are presented showing that class-C stages may be used for both the main and error amplifiers yielding practical efficiencies well in excess of 30 percent, with theoretical efficiencies of much greater than 40 percent being possible. The levels of linearity which may be achieved are required for most satellite systems, however if greater linearity is required, the technique may be used in addition to conventional pre-distortion techniques.
Kenington, Peter B.↗
Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios
The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitrate (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6, and Drain Efficiency (DE) of 48.9 under continuous wave (CW) operation.
Cognitive↗
Multiband Reconfigurable Harmonically Tuned Gallium Nitride (GaN) Solid-State Power Amplifier (SSPA) for Cognitive Radios
The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse Class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6 percent, and Drain Efficiency (DE) of 48.9 percent under continuous wave (CW) operation.
Cognitive↗
THz Instrumentation for the Herschel Space Observatory's Heterodyne Instrument for Far Infrared
The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory utilizes a variety of novel RF components in its five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, high power W-bapd Isolators, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration through the Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the local oscillators oscillators for the three highest frequency receivers as well as W-band power amplifiers, high power W-band isolators, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. This paper presents an update of the performance and the current state of development.
local oscillators↗
High-gain, broadband traveling wave maser Patent
Comb type traveling wave maser amplifier for improved high gain broadband output
Clauss, R. C.↗
Lineshape characterization of excitons in monolayer WS 2 by two-dimensional electronic spectroscopy
The optical properties of monolayer transition metal dichalcogenides (TMDCs), an important family of two-dimensional (2D) semiconductors for optoelectronic applications, are dominated by two excitons A (XA) and B (XB) located at K/K's valleys. The lineshape of the excitons is an indicator of the interaction of the excitons with other particles and also largely determines the performance of TMDC-based optoelectronic devices. In this work, we apply 2D electronic spectroscopy (2DES), which enables separation of the intrinsic homogeneous linewidth and the extrinsic inhomogeneous linewidth, to dissect the lineshape of XA in monolayer WS 2 . With a home-built broadband optical parametric amplifier, the 2D spectra give the exciton linewidth values for extensive ranges of excitation densities and temperatures, reflecting inter-exciton and exciton–phonon interactions. Meanwhile, the time-domain evolution of the lineshape reveals a similar rate of spectral diffusion to that in quantum wells (QWs) based on III–V semiconductors.
36 MATERIALS SCIENCE↗
W-band system-on-chip electron cyclotron emission imaging system on DIII-D
Monolithic, millimeter wave “system-on-chip” (SoC) technology has been employed in heterodyne receiver integrated circuit radiometers in a newly developed Electron Cyclotron Emission Imaging (ECEI) system on the DIII-D tokamak for 2D electron temperature profile and fluctuation evolution diagnostics. Here, a prototype module operating in E-band (72-80 GHz) was first employed in a 2 x 10 element array that demonstrated significant improvements over the previous quasi-optical Schottky diode mixer arrays during the 2018 operational campaign of the DIII-D tokamak. For compatibility with International Thermonuclear Experimental Reactor (ITER) relevant scenarios on DIII-D, the SoC ECEI system was upgraded with 20 horn-waveguide receiver modules. Each individual module contains a University of California at Davis designed W-band (75 -110 GHz) receiver die that integrates a broadband low noise amplifier (LNA), a double balanced down-converting mixer, and a x4 multiplier on the local oscillator (LO) chain. A x2 multiplier and two IF amplifiers are packaged and selected to further boost the signal strength as well as downconvert the signal frequency. The upgraded W-band array exhibits > 30 dB additional gain and 20x improvement in noise temperature comparing with the previous Schottky diode radio frequency (RF) mixer input systems; an internal 8 times multiplier chain is used to bring down the LO frequency below 12 GHz, thereby obviating the need for a large aperture for quasi-optical LO coupling and replacing it with coaxial connectors. The horn-waveguide shielding housing avoids out-of-band noise interference on each individual module. The upgraded ECEI system plays an important role for absolute electron temperature evolution and fluctuation measurements for edge and core region transport physics studies.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Broadband stable power multiplier Patent
Solid state broadband stable power amplifier
Lutes, G. F., Jr.↗
Broadband Continuous Single-mode Tuning of a Short-cavity Quantum-cascade VECSEL
Changing the length of a laser cavity is a simple technique for continuously tuning the wavelength of a laserbutis rarelyused for broad fractional tuning, with a notable exception of the diode laser VCSEL1,2. This is because, to avoid mode hopping, the cavity must be keptopticallyshort to ensure a large free-spectral-range (FSR) compared to the gain bandwidth of the amplifying material. Terahertz quantum-cascade (QC) lasers are ideal candidates for such a short cavity scheme as they demonstrate exceptional gain bandwidths (up to octave spanning) and can be integrated with broadband amplifying metasurfaces. We present such a QC-metasurface based vertical-external-cavity surface-emitting-laser (VECSEL) that exhibits over 20% continuous fractional tuning of a single laser mode. Such tuning is possible because the metasurface has sub-wavelength thickness which allows lasing on low-order Fabry-Pérot cavity modes. Good beam quality and high output power are simultaneously obtained.
Christopher A Curwen↗
0.5 W 2-21 GHz monolithic GaAs distributed amplifier
A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented for a distributed amplifier design. It has significantly increased the gate width of the amplifier with a resultant increase of the broadband output power and efficiency. A monolithic GaAs distributed amplifier using 6 x 300-micron FETs has achieved a record output power of 0.5 W over the 2 to 21 GHz frequency band with at least 4 dB gain. The power-added efficiency was 14 percent. The linear gain was 5 plus or minus 1 dB over the same frequency band.
Kim, B.↗
Recent advances concerning an understanding of sound transmission through engine nozzles and jets
Experiments on the interaction between a turbulent jet and pure tone sound coming from inside the jet nozzle are reported. This is a model representing the sound transmission from sound sources in jet engines through the nozzle and the jet flow into the far field. It is shown that pure tone sound at low frequencies is considerably attenuated by the jet flow, whereas it is conserved at higher frequencies. On the other hand, broadband jet noise can be amplified considerably by a pure tone excitation. Both effects seem not to be interdependent. Knowledge on how they are created and on relevant parameter dependences allow new considerations for the development of sound attenuators.
Bechert, D.↗