Dynamic braking of bidirectional motors
Circuit controls switching of bidirectional motor with dynamic braking.
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Circuit controls switching of bidirectional motor with dynamic braking.
A wireless-controlled smart plug device and methods of use and operation, using a solid state switch to provide electrical power from an outlet to a load, and provide protection against overload, short circuit, ground, arc, or voltage surge faults. The switch includes a bidirectional semiconductor switch with two back-to-back connected transistors, such as silicon power MOSFETs, silicon insulated-gate bipolar transistors (IGBTs), silicon carbide (SiC) transistors, or gallium nitride (GaN) transistors, each configured to control the current flow from the electrical receptacle to the external electrical load.
A novel junction temperature monitoring sensor is proposed and experimentally demonstrated for application in MOS-gate power devices. The sensor is created using the polycide gate electrode layer of the devices to create a temperature-sensitive resistor without any additional fabrication steps. The resistor is located on the field oxide with one end grounded at the device reference terminal to isolate it from the device current and voltage transients. It allows in-situ monitoring of the device junction temperature during active circuit operation. The technology has been implemented to monitor the junction temperature of Silicon Carbide Junction Barrier Schottky Field Effect Transistors (SiC JBSFETs) with the bi-directional FET (BiDFET).
Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated using two discrete SiC power MOSFET bare die chips, packaged within a four-terminal custom-designed module. Static and dynamic characterization has been carried out to inspect the on-state and switching behaviour of the BiDFET. Here, the BiDFET is shown to have a low forward voltage drop of 0.6 V at a current of 10 A, which is more than 2.5x smaller than previous Si IGBT and SiC MOSFET based bidirectional switch implementations.
Materials whose luminescence can be switched by optical stimulation drive technologies ranging from superresolution imaging, nanophotonics, and optical data storage, to targeted pharmacology, optogenetics, and chemical reactivity. Furthermore, these photoswitchable probes, including organic fluorophores and proteins, can be prone to photodegradation and often operate in the ultraviolet or visible spectral regions. Colloidal inorganic nanoparticles can offer improved stability, but the ability to switch emission bidirectionally, particularly with near-infrared (NIR) light, has not, to our knowledge, been reported in such systems. Here, we present two-way, NIR photoswitching of avalanching nanoparticles (ANPs), showing full optical control of upconverted emission using phototriggers in the NIR-I and NIR-II spectral regions useful for subsurface imaging. Employing single-step photodarkening and photobrightening, we demonstrate indefinite photoswitching of individual nanoparticles (more than 1,000 cycles over 7 h) in ambient or aqueous conditions without measurable photodegradation. Critical steps of the photoswitching mechanism are elucidated by modelling and by measuring the photon avalanche properties of single ANPs in both bright and dark states. Unlimited, reversible photoswitching of ANPs enables indefinitely rewritable two-dimensional and three-dimensional multilevel optical patterning of ANPs, as well as optical nanoscopy with sub-Å localization superresolution that allows us to distinguish individual ANPs within tightly packed clusters.
The matrix converter topology for direct ac-to-ac conversion offers elimination of the bulky and unreliable D.C. link capacitors used in the popular Voltage-Source Inverter (VSI) with a front-end rectifier. The resulting more compact and higher efficiency implementation is a desirable solution for a wide variety of applications, such as photovoltaic energy generation, motor drives, and energy storage systems. The development of matrix converters has been hampered by the lack of availability of commercial bidirectional power switches with the ability to block high voltages in the first and third quadrants, carry on state current in both quadrants with low voltage drop, exhibit large forward-biased safe-operating-area (FBSOA), and low switching power losses. Consequently, many implementations have been tried in the past using discrete devices, as listed in Table I. Two implementations utilize commonly available asymmetric blocking IGBTs, while two cases make use of SiC power MOSFETs. They generally have a large parts count (4-6 individual switches) that occupies significant space in the converter where multiple bi-directional switches are required. They also have a high on-state voltage drop that degrades efficiency. As a result, one implementation utilizes symmetric blocking IGBT to achieve a low parts count (2), but its switching losses are unacceptably high.
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A true push-pull switching power amplifier is disclosed utilizing two dc-to-dc converters. Each converter is comprised of two inductances, one inductance in series with a DC source and the other inductor in series with the output load, and an electrical energy transferring device with storage capability, namely storage capacitance, with suitable switching means between the inductances to obtain DC level conversion, where the switching means allows bidirectional current (and power) flow, and the switching means of one dc-to-dc converter is driven by the complement of a square-wave switching signal for the other dc-to-dc converter for true push-pull operation. For reduction of current ripple, the inductances in each of the two converters may be coupled, and with proper design of the coupling, the ripple can be reduced to zero at either the input or the output, but preferably the output.
The MOS-Controlled Thyristor (MCT) is emerging as a powerful switch that combines the better characteristics of existing power devices. A study of switching stresses on an MCT switch under zero voltage resonant switching is presented. The MCT is used as a bidirectional switch in an ac/ac pulse density modulated inverter for induction motor drive. Current and voltage spikes are observed and analyzed with variations in the timing of the switching. Different snubber circuit configurations are under investigation to minimize the effect of these transients. The results will be extended to study and test the MCT switching in a medium power (5 hp) induction motor drive.
—The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.
The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.
Bidirectional thyristor coupled to a series of actuator driven electromechanical contacts generates hybrid electromechanical solid state switch for ac power control. Device is useful in power control applications where zero crossover switching is required.
In this paper, we propose a low-cost bidirectional four-switch inverter that transfers three-phase energy between a permanent magnet synchronous generator (PMSG) driven by a wave energy collector and the power grid or a local ac load. To achieve high control performance, the machine-side inverter uses a high-gain observer for rotor position estimation and a Lyapunov-based approach for torque control. For the gridside inverter control, we estimate the filter capacitor voltage with a model reference adaptive system and control the dc-link voltage with a Lyapunov-based energy function. We also track the maximum power point from the sea waves with an integral control law that actively matches the generator impedance with that of the wave collection device. The proposed system supports both grid-following/forming modes. We validate our control design with simulation results on a 3-kW hardware setup.
Four-terminal network forms a bidirectional valve which will switch or alternate an ac signal without crossover distortion or threshold effect. In this network, an isolated control signal is sufficient for circuit turn-on.
The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.
A mobile remote manipulator system is disclosed for assembly, repair and logistics transport on, around and about a space station square bay truss structure. The vehicle is supported by a square track arrangement supported by guide pins integral with the space station truss structure and located at each truss node. Propulsion is provided by a central push-pull drive mechanism that extends out from the vehicle one full structural bay over the truss and locks drive rods into the guide pins. The draw bar is now retracted and the mobile remote manipulator system is pulled onto the next adjacent structural bay. Thus, translation of the vehicle is inchworm style. The drive bar can be locked onto two guide pins while the extendable draw bar is within the vehicle and then push the vehicle away one bay providing bidirectional push-pull drive. The track switches allow the vehicle to travel in two orthogonal directions over the truss structure which coupled with the bidirectional drive, allow movement in four directions on one plane. The top layer of this trilayered vehicle is a logistics platform. This platform is capable of 369 degees of rotation and will have two astronaut foot restraint platforms and a space crane integral.
A new optimum topology dc-to-dc switching converter is extended to provide bidirectional current flow. The resulting two-quadrant converter can be employed to eliminate the discontinuous current mode in normal unidirectional applications, but is especially suited for spacecraft battery conditioning as a charge-discharge regulator in place of the conventional separate converters. Implementation of the control features and the battery charge current and voltage limits are discussed.