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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Machine learning pipeline for denoising low signal-to-noise ratio and out-of-distribution transmission electron microscopy datasets

High-resolution transmission electron microscopy (HRTEM) is crucial for observing material’s structural and morphological evolution at Angstrom scales, but the electron beam can alter these processes. Devices such as CMOS-based direct-electron detectors operating in electron-counting mode can be utilized to substantially reduce the electron dosage. However, the resulting images often lead to a low signal-to-noise ratio, which requires frame integration that sacrifices temporal resolution. Several machine learning (ML) models have been recently developed to successfully denoise HRTEM images. Yet, these models are often computationally expensive, and their inference speeds on GPUs are outpaced by the imaging speed of advanced detectors, precluding in situ analysis. Furthermore, the performance of these denoising models on datasets with imaging conditions that deviate from the training datasets has not been evaluated. To mitigate these gaps, we propose a new self-supervised ML denoising pipeline specifically designed for time-series HRTEM images. This pipeline integrates a blind-spot convolution neural network with pre-processing and post-processing steps, including drift correction and low-pass filtering. Results demonstrate that our model outperforms various other ML and non-ML denoising methods in noise reduction and contrast enhancement, leading to improved visual clarity of atomic features. Additionally, the model is drastically faster than U-Net-based ML models and demonstrates excellent out-of-distribution generalization. The model’s computational inference speed is in the order of milliseconds per image, rendering it suitable for application in in-situ HRTEM experiments.

36 MATERIALS SCIENCE↗

Mixed Linear/Square-Root Encoded Single Slope Ramp Provides a Fast, Low Noise Analog to Digital Converter with Very High Linearity for Focal Plane Arrays

An analog-to-digital converter (ADC) converts pixel voltages from a CMOS image into a digital output. A voltage ramp generator generates a voltage ramp that has a linear first portion and a non-linear second portion. A digital output generator generates a digital output based on the voltage ramp, the pixel voltages, and comparator output from an array of comparators that compare the voltage ramp to the pixel voltages. A return lookup table linearizes the digital output values.

Wrigley, Christopher James↗

15 cut-off 128x128 Quantum Well Infrared Photodetectors (QWIPS) Camera

We discuss the development and the performance of a very long wavelength (13.5 - 15 128x128 AlGaAs/GaAs multiquantum well infrared imaging system. Highly uniform, high-yield QWIP focal plane array was hybridized to a CMOS multiplexer operating in a direct injection mode. For efficient light coupling an integral random scattering reflector (Random Grating) was incorporated. Due to the high uniformity, excellent imagery, low noise as well as a noise equivalent temperature difference (NE T) of less than 30 mK were obtained when operating around 45 K. Therefore, high image contrast signal to noise ratio has been achieved.

128x128 Photodetectors↗

CMOS active pixel sensor type imaging system on a chip

A single chip camera which includes an .[.intergrated.]. .Iadd.integrated .Iaddend.image acquisition portion and control portion and which has double sampling/noise reduction capabilities thereon. Part of the .[.intergrated.]. .Iadd.integrated .Iaddend.structure reduces the noise that is picked up during imaging.

Fossum, Eric R.↗

Precision of FLEET Velocimetry Using High-speed CMOS Camera Systems

Femtosecond laser electronic excitation tagging (FLEET) is an optical measurement technique that permits quantitative velocimetry of unseeded air or nitrogen using a single laser and a single camera. In this paper, we seek to determine the fundamental precision of the FLEET technique using high-speed complementary metal-oxide semiconductor (CMOS) cameras. Also, we compare the performance of several different high-speed CMOS camera systems for acquiring FLEET velocimetry data in air and nitrogen free-jet flows. The precision was defined as the standard deviation of a set of several hundred single-shot velocity measurements. Methods of enhancing the precision of the measurement were explored such as digital binning (similar in concept to on-sensor binning, but done in post-processing), row-wise digital binning of the signal in adjacent pixels and increasing the time delay between successive exposures. These techniques generally improved precision; however, binning provided the greatest improvement to the un-intensified camera systems which had low signal-to-noise ratio. When binning row-wise by 8 pixels (about the thickness of the tagged region) and using an inter-frame delay of 65 micro sec, precisions of 0.5 m/s in air and 0.2 m/s in nitrogen were achieved. The camera comparison included a pco.dimax HD, a LaVision Imager scientific CMOS (sCMOS) and a Photron FASTCAM SA-X2, along with a two-stage LaVision High Speed IRO intensifier. Excluding the LaVision Imager sCMOS, the cameras were tested with and without intensification and with both short and long inter-frame delays. Use of intensification and longer inter-frame delay generally improved precision. Overall, the Photron FASTCAM SA-X2 exhibited the best performance in terms of greatest precision and highest signal-to-noise ratio primarily because it had the largest pixels.

Peters, Christopher J.↗

Precision of FLEET Velocimetry Using High-Speed CMOS Camera Systems

Femtosecond laser electronic excitation tagging (FLEET) is an optical measurement technique that permits quantitative velocimetry of unseeded air or nitrogen using a single laser and a single camera. In this paper, we seek to determine the fundamental precision of the FLEET technique using high-speed complementary metal-oxide semiconductor (CMOS) cameras. Also, we compare the performance of several different high-speed CMOS camera systems for acquiring FLEET velocimetry data in air and nitrogen free-jet flows. The precision was defined as the standard deviation of a set of several hundred single-shot velocity measurements. Methods of enhancing the precision of the measurement were explored such as digital binning (similar in concept to on-sensor binning, but done in post-processing), row-wise digital binning of the signal in adjacent pixels and increasing the time delay between successive exposures. These techniques generally improved precision; however, binning provided the greatest improvement to the un-intensified camera systems which had low signal-to-noise ratio. When binning row-wise by 8 pixels (about the thickness of the tagged region) and using an inter-frame delay of 65 microseconds, precisions of 0.5 meters per second in air and 0.2 meters per second in nitrogen were achieved. The camera comparison included a pco.dimax HD, a LaVision Imager scientific CMOS (sCMOS) and a Photron FASTCAM SA-X2, along with a two-stage LaVision HighSpeed IRO intensifier. Excluding the LaVision Imager sCMOS, the cameras were tested with and without intensification and with both short and long inter-frame delays. Use of intensification and longer inter-frame delay generally improved precision. Overall, the Photron FASTCAM SA-X2 exhibited the best performance in terms of greatest precision and highest signal-to-noise ratio primarily because it had the largest pixels.

Peters, Christopher J.↗

A CMOS Imager with Focal Plane Compression using Predictive Coding

This paper presents a CMOS image sensor with focal-plane compression. The design has a column-level architecture and it is based on predictive coding techniques for image decorrelation. The prediction operations are performed in the analog domain to avoid quantization noise and to decrease the area complexity of the circuit, The prediction residuals are quantized and encoded by a joint quantizer/coder circuit. To save area resources, the joint quantizerlcoder circuit exploits common circuitry between a single-slope analog-to-digital converter (ADC) and a Golomb-Rice entropy coder. This combination of ADC and encoder allows the integration of the entropy coder at the column level. A prototype chip was fabricated in a 0.35 pm CMOS process. The output of the chip is a compressed bit stream. The test chip occupies a silicon area of 2.60 mm x 5.96 mm which includes an 80 X 44 APS array. Tests of the fabricated chip demonstrate the validity of the design.

Leon-Salas, Walter D.↗

A 24-Channel Digitizer With a JESD204B-Compliant Serial Interface for High-Speed Detectors

In this report a 24-channel application-specific integrated circuit (ASIC) for the readout of high-speed CMOS active pixel sensors for charged particle detection is presented. The chip comprises 24 preamplifiers, 24 distinct 12-bit, 25 MSPS Pipelined analog-to-digital converters (ADCs) with self-calibration, an internal phase-locked loop (PLL), and a 3 Gbps serial interface that conforms to the JESD204B standard. To simplify interfacing with a variety of sensors, the ASIC also includes an automatic offset calibration loop. The high level of integration of the ASIC reduces overall system cost and area, and exploiting the signal characteristics of the image sensor allows the ADC to be optimized for reduced power dissipation. The use of an integrated serializer and an industry standard protocol simplifies integration of the ASIC into a complete camera system. The ASIC, called the High-Speed Image Preprocessor Targeted for Electron Readout, or HIPSTER, with a die area of 64.26 mm 2 , is packaged in a 480-ball grid array (BGA) and is fabricated in 180-nm CMOS technology. HIPSTER achieves typical differential nonlinearity (DNL) < 0.55 LSB, input-referred thermal noise of $114.5 μV-rms, and a bit error rate (BER) of better than 10-14. The power dissipation is 98 mW/channel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

A Cryogenic readout integrated circuit with analog pile-up and in-Pixel ADC for high frame rate Skipper CCD-in-CMOS Sensors

The Skipper CCD-in-CMOS Parallel Read-Out Circuit V2 (SPROCKET2) is designed to enable high frame rate readout of Skipper CCD-in-CMOS image sensors. The SPROCKET2 pixel is fabricated in a 65 nm CMOS process and occupies a 60$\mu$m $\times$ 60$\mu$m footprint. SPROCKET2 is intended to be heterogeneously integrated with a pixelated Skipper CCD-in-CMOS sensor, such that one readout pixel is connected to a multiplexed array of 16 active image sensor pixels, to match their spatial geometry. Our design benefits from the Skipper CCD-in-CMOS sensor's non-destructive readout capability to achieve exceptionally low noise through multi-sampling and averaging while optimizing for total power consumption. The pixel readout utilizes correlated double sampling to minimize 1/f noise and includes "pile-up" of ten successive samples in the analog domain before digitizing at a rate of 66.7 ksps. Measurement results of in-pixel serial SAR ADC show DNL and INL of ~0. 44 LSB and 0.58 LBS respectively. A large area array of 20,000 SPROCKET2 ADC pixels (multiplexed 1:16 to 320,000 sensor pixels) is currently under test. By reading out data over a 10 Gbps optical link, this pixel design enables a frame rate of $\sim$ 4 kfps for large sensing areas with minimal sensing deadtime. In the highest gain mode, the pixelated ADC has an input-referred resolution of 10$\mu$V with a simulated power consumption of 50$\mu$W. The pixel operates with constant current draw to minimize power-rail crosstalk.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Billion-pixel x-ray camera (BiPC-X)

The continuing improvement in quantum efficiency (above 90% for single visible photons), reduction in noise (below 1 electron per pixel), and shrink in pixel pitch (less than 1 μm) enable billion-pixel x-ray cameras (BiPC-X) based on commercial complementary metal–oxide–semiconductor (CMOS) imaging sensors. We describe BiPC-X designs and prototype construction based on flexible tiling of commercial CMOS imaging sensors with millions of pixels. Device models are given for direct detection of low energy x rays (<10 keV) and indirect detection of higher energies using scintillators. Modified Birks’s law is proposed for light yield non-proportionality in scintillators as a function of x-ray energy. Single x-ray sensitivity and spatial resolution have been validated experimentally using a laboratory x-ray source and the Argonne Advanced Photon Source. Possible applications include wide field-of-view or large x-ray aperture measurements in high-temperature plasmas, the state-of-the-art synchrotron, x-ray free electron laser, and pulsed power facilities.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

On-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz

The world s first silicon-based complementary metal oxide/semiconductor (CMOS) integrated-circuit voltage-controlled oscillator (VCO) operating in a frequency range around 324 GHz has been built and tested. Concomitantly, equipment for measuring the performance of this oscillator has been built and tested. These accomplishments are intermediate steps in a continuing effort to develop low-power-consumption, low-phase-noise, electronically tunable signal generators as local oscillators for heterodyne receivers in submillimeter-wavelength (frequency > 300 GHz) scientific instruments and imaging systems. Submillimeter-wavelength imaging systems are of special interest for military and law-enforcement use because they could, potentially, be used to detect weapons hidden behind clothing and other opaque dielectric materials. In comparison with prior submillimeter- wavelength signal generators, CMOS VCOs offer significant potential advantages, including great reductions in power consumption, mass, size, and complexity. In addition, there is potential for on-chip integration of CMOS VCOs with other CMOS integrated circuitry, including phase-lock loops, analog- to-digital converters, and advanced microprocessors.

Samoska, Lorene↗

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

This paper describes ongoing research and development of CMOS active pixel image sensors for low cost commercial applications. A number of sensor designs have been fabricated and tested in both p-well and n-well technologies. Major elements in the development of the sensor include on-chip analog signal processing circuits for the reduction of fixed pattern noise, on-chip timing and control circuits and on-chip analog-to-digital conversion (ADC). Recent results and continuing efforts in these areas will be presented.

active pixel image sensors CMOS signal processing ↗

A comparison of imaging methods for use in an array biosensor

An array biosensor has been developed which uses an actively-cooled, charge-coupled device (CCD) imager. In an effort to save money and space, a complementary metal-oxide semiconductor (CMOS) camera and photodiode were tested as replacements for the cooled CCD imager. Different concentrations of CY5 fluorescent dye in glycerol were imaged using the three different detection systems with the same imaging optics. Signal discrimination above noise was compared for each of the three systems.

Evaluation Studies↗

Two-Photon-Absorption Scheme for Optical Beam Tracking

A new optical beam tracking approach for free-space optical communication links using two-photon absorption (TPA) in a high-bandgap detector material was demonstrated. This tracking scheme is part of the canonical architecture described in the preceding article. TPA is used to track a long-wavelength transmit laser while direct absorption on the same sensor simultaneously tracks a shorter-wavelength beacon. The TPA responsivity was measured for silicon using a PIN photodiode at a laser beacon wavelength of 1,550 nm. As expected, the responsivity shows a linear dependence with incident power level. The responsivity slope is 4.5 x 10(exp -7) A/W2. Also, optical beam spots from the 1,550-nm laser beacon were characterized on commercial charge coupled device (CCD) and complementary metal-oxide semiconductor (CMOS) imagers with as little as 13.7 microWatts of optical power (see figure). This new tracker technology offers an innovative solution to reduce system complexity, improve transmit/receive isolation, improve optical efficiency, improve signal-to-noise ratio (SNR), and reduce cost for free-space optical communications transceivers.

Ortiz, Gerardo G.↗

CMOS Active-Pixel Image Sensor With Simple Floating Gates

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

Fossum, Eric R.↗

Image processing methods for Rayleigh scattering measurements of diesel spray mixing at high repetition rate

This work describes the diagnostic implementation and image processing methods to quantitatively measure diesel spray mixing injected into a high-pressure, high-temperature environment. We used a high-repetition-rate pulse-burst laser developed in-house, a high-speed CMOS camera, and optimized the optical configuration to capture Rayleigh scattering images of the vaporized fuel jets inside a constant volume chamber. The experimental installation was modified to reduce reflections and flare levels to maximize the images’ signal-to-noise ratios by anti-reflection coatings on windows and surfaces, as well as series of optical baffles. Because of the specificities of the high-speed system, several image processing techniques had to be developed and implemented to provide quantitative fuel concentration measurements. We find that these methods involve various correction procedures such as camera linearity, laser intensity fluctuation, dynamic background flare, as well as beam-steering effects. Image inpainting was also applied to correct the Rayleigh scattering signal from large scatterers (e.g. particulates). The experiments demonstrate that applying planar laser Rayleigh scattering at high repetition rate to quantitatively resolve the mixing of fuel and ambient gases in diesel jets is challenging, but possible. The thorough analysis of the experimental uncertainty and comparisons to past data prove that such measurements can be accurate, whilst providing valuable information about the mixing processes of high-pressure diesel jets.

47 OTHER INSTRUMENTATION↗

HgCdTe 256x256 NWIR FPA

Researchers developed a HgCdTe 256x256 focal plane array (FPA) which operates in the 1 to 5 micron band. This is presently the largest demonstrated HgCdTe FPA. The detector material is HgCdTe on sapphire (PACE-1 technology) which has a low thermal expansion mismatch with silicon. The multiplexer is a CMOS FET-switch device processed through a commercial silicon foundry. The multiplexer input is direct injection and the charge capacity is about 2 times 10 to the 7th power electrons. The kTC limited read noise is 400 electrons. Researchers demonstrated high background imaging using the device. The broadband quantum efficiency is measured to be 59 percent. Dark currents less than 0.1 pA were measured at 77 K for detectors processed on PACE-1 material with 4.9 microns cutoff. The dark currents decrease as the temperature is lowered, and researchers are presently studying the T less than 77 K characteristics. The interconnect yield is greater than 95 percent. The devices are available for astronomical applications.

Vural, Kadri↗

Unfulfilled needs in IR astronomy focal-plane readout electronics

The NOAO's 8-m IR optimized telescope for Mauna Kea and NASA's SIRTF show that from 1 to 200 microns there are a number of unfulfilled needs in readout electronics. These include: extremely low readnoise, less than 10 electrons, stable operation at temperatures as low as 2 K, high well capacity, greater than 1 e 7 electrons, and integration times from 30 msec to over 100 sec. Sensors for adaptive optics systems are required with readnoise less than 10 electrons and response times of 30 msec. They should be highly efficient from 1 to 2.5 microns, but may have small formats. Ground-based imagers at these wavelengths need comparable readnoise but longer integration times, and the largest possible formats are essential. To achieve these goals improved cryogenic MOSFETS are essential and complete cryogenic CMOS circuits are highly desirable. Experimental cryoptimized MFETS promise to exceed the above noise requirements at 77 K and approach the needs at 2 K.

Low, Frank J.↗