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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Process Research on Polycrystalline Silicon Material (PROPSM)

Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

Culik, J. S.↗
NASA NTRS1983

Multiwavelength analyzer for the determination of diffusion lengths

The minority carrier diffusion length Ln in the base or substrate region is an important parameter which governs a solar cell's performance. The present investigation is concerned with the development of a multiwavelength analyzer (MWA) technique for the nondestructive spatial testing of polycrystalline solar cells. The MWA method is based on the utilization of the short-circuit current generated by two or more light-emitting diodes (LEDs) operating at different wavelengths and modulated 180 deg out-of-phase. For a determination of Ln by the MWA technique, it is necessary to know the value of the absorption coefficient.

Stafsudd, O. M.↗
NASA NTRS1986

Transit time and charge storage measurements in heavily doped emitters

A first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer is reported. The value was obtained by a high-frequency conductance method recently developed and used for low-doped Si. The transit time coupled with the steady-state current enables the determination of the quasi-static charge stored in the emitter and the quasi-static emitter capacitance. Using a transport model, from the measured transit time, the value for the minority-carrier diffusion coefficient and mobility is estimated. The measurements were done using a heavily doped emitter of the Si p(+)-n-p bipolar transistor. The new result indicates that the position-averaged minority-carrier diffusion coefficients may be much smaller than the corresponding majority-carrier values for emitters having a concentration ranging from about 3 x 10 to the 19th per cu cm to 10 to the 20th per cu cm.

Neugroschel, A.↗
NASA NTRS1986

Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon

Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities.

Swirhun, S. E.↗
NASA NTRS1979

Transport of majority and minority carriers in 2-micron-diameter Pt-GaAs Schottky barriers

An experimental study of small area (2-micron diameter) Pt-GaAs Schottky barrier diodes has been made, by using a wafer chip with a matrix of these diodes lying within approximately a minority carrier diffusion length of one another. Using one diode as collector and another as emitter, transistor measurements indicated that the dominant contribution to the current is the majority-carrier thermionic field emission current for large forward-bias voltage of the emitter junction (V-EB no less than about 0.4 V), whereas the smaller forward-bias (V-EB no greater than about 0.4 V) recombination in the space-charge region was most important. The minority carrier injection ratio is measurable only for large forward-bias voltages, decreasing from about 0.02 to 0.00001 as VEB increases from 0.5 to 1.0 V. The minority carrier diffusion length was measured to be about 1.3 microns. These results are of considerable significance for the understanding and optimization of the performance of these devices as classical detectors and mixers.

Chan, E. Y.↗
NASA NTRS1978

Mechanisms of photon-induced changes in silicon solar cell parameters

Reversible changes in solar cell performance were induced by AM1 illumination and evaluated by measuring short-circuit current, weak light spectral response, and minority carrier diffusion length. In n(+)p cells the change manifests itself as a reduced short-circuit current, a loss of the red response, and a reduction in minority carrier diffusion length. In p(+)n cells there are two-photon induced effects: (1) enhancement of the blue spectral response, presumably occurring in the p(+) layer and (2) degradation in open-circuit voltage at low light levels due to increased leakage occurring only after the junction edge is exposed to bright light. Most of these photon effects are attributed to defects in the silicon.

Cheng, L. J.↗
NASA NTRS1984

Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

Culik, J. S.↗
NASA NTRS1981

Projected performance of III-V epitaxial multijunction solar cells in space

The monolithic epitaxial multijunction stack, to be fabricated from III-V quaternary alloys, has been analyzed for use in space with a detailed computer model. AlGaInAs and AlGaAsSb three-junction cells, each having an AlAsSb window, were modeled as functions of temperature, concentration, minority carrier diffusion length, etc., as were AlGaAs/GaAs and AlGaAsSb/InP two-junction cells. Cell efficiencies for one expected operating point in space (50 suns, 125 C) were around 20% for the two-junction cells and around 23-24% for the three-junction cells, using projected minority carrier diffusion lengths of 1.5 microns. Longer diffusion lengths in the III-V alloys (approaching those of GaAs) would allow the three-junction cells to reach 30% efficiency, if such conditions as 100 suns, 50 C can be achieved. The major technological challenges facing the high-efficiency multijunction cell are summarized and discussed in light of the modeling results.

Maloney, T. J.↗
NASA NTRS1984

Backside damage-gettering in cast polycrystalline silicon

The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.

Culik, J.↗
NASA NTRS1986

Stress and efficiency studies in EFG

The goals of this program were: (1) to define minimum stress configurations for silicon sheet growth at high speeds; (2) to quantify dislocation electrical activity and their limits on minority carrier diffusion length in deformed silicon; and (3) to study reasons for degradation of lifetime with increases in doping level in edge-defined film-fed growth (EFG) materials. A finite element model was developed for calculating residual stress with plastic deformation. A finite element model was verified for EFG control variable relationships to temperature field of the sheet to permit prediction of profiles and stresses encountered in EFG systems. A residual stress measurement technique was developed for finite size EFG material blanks using shadow Moire interferometry. Transient creep response of silicon was investigated in the temperature range between 800 and 1400 C in strain and strain regimes of interest in stress analysis of sheet growth. Quantitative relationships were established between minority carrier diffusion length and dislocation densities using Electron Beam Induced Current (EBIC) measurement in FZ silicon deformed in four point bending tests.

Source record↗
NASA NTRS2014

Interaction Between the Broad-Lined Type Ic Supernova 2012ap and Carriers of Diffuse Interstellar Bands

The diffuse interstellar bands (DIBs) are absorption features observed in optical and near-infrared spectra that are thought to be associated with carbon-rich polyatomic molecules in interstellar gas. However, because the central wavelengths of these bands do not correspond with electronic transitions of any known atomic or molecular species, their nature has remained uncertain since their discovery almost a century ago. Here we report on unusually strong DIBs in optical spectra of the broad- lined Type Ic supernova SN2012ap that exhibit changes in equivalent width over short (. 30 days) timescales. The 4428 A and 6283 A DIB features get weaker with time, whereas the 5780 A feature shows a marginal increase. These nonuniform changes suggest that the supernova is interacting with a nearby source of the DIBs and that the DIB carriers possess high ionization potentials, such as small cations or charged fullerenes. We conclude that moderate-resolution spectra of supernovae with DIB absorptions obtained within weeks of outburst could reveal unique information about the mass-loss environment of their progenitor systems and provide new constraints on the properties of DIB carriers.

broad↗
NASA NTRS1992

On ionized napthalene (C10H8(+)) as a carrier of diffuse interstellar bands

A recent laboratory study of ionized napthalene (C10H8(+)) has led to the suggestion that some of the unidentified diffuse interstellar bands may be formed by this molecular ion in the diffuse interstellar medium. In particular, there is a close match between a laboratory feature at 6741 A and a weak diffuse band at 6742 A, and some near-coincidences at other wavelengths. The same laboratory data show that other diffuse bands may be found, including one at 6151 A, if indeed C10H8(+) is responsible. This paper reports a search for the 6151 A feature, with negative results. The derived upper limits appear to be in conflict with the C10H8(+) hypothesis, but may not be, due to uncertainties in the expected width of the predicted interstellar feature, and due to the fact that the observations do not include data on the 6742 A band, so it is not known whether this putative C10H8(+) feature is present in the observed clouds.

Snow, Theodore P.↗
NASA NTRS1991

Charge collected by diffusion from an ion track under mixed boundary conditions

Charge-carrier diffusion from an ion track in a silicon substrate at least a few hundred microns thick is analyzed. The substrate upper surface is treated as reflective except for a small section, intended to represent a reverse-biased junction, which is treated as a sink. Total charge collected by the sink is calculated by assuming transport to be governed by an ambipolar diffusion equation with temporally constant and spatially uniform carrier lifetime and diffusion coefficient. Present results apply to a normally incident track but could easily be generalized to arbitrary track direction. The collected charge is found to depend on track length and on the electrostatic capacitance, rather than the area, of the sink. Theoretical predictions are compared to the results of a numerical simulation called the Poisson and Continuity Equation Solver (PISCES) for three cases and are found to agree within a factor of two in the worst case.

Edmonds, Larry D.↗
NASA NTRS1978

Diffusion lengths in amphoteric GaAs heteroface solar cells

Minority-carrier diffusion lengths in amphoteric GaAs:Si were investigated. Electron and hole diffusion lengths in p- and n-type, respectively, were determined to be 13 microns and 7 microns. Preliminary efficiency measurements on heteroface structures based on amphoteric GaAs:Si p-n junctions indicated that these devices should make excellent solar cells.

Ashley, K. L.↗
NASA NTRS1981

Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

Von Roos, O.↗
NASA NTRS1978

Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency

A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.

Kressel, Henry↗
NASA NTRSDate not supplied

Electron Irradiation Study of Metamorphic 1.7 eV GaAsP Solar Cells

We investigated the effects of 1 MeV electron irradiation on metamorphic ~1.7 eV GaAsP solar cells on GaP and on GaP/Si. Effects of junction polarity, base thickness, and threading dislocation density on radiation hardness were investigated using the AM0 solar simulator at NASA Glenn Research Center. Degradation of solar cell efficiency after irradiation was dominated by reduced minority carrier diffusion length in the base, leading to loss of long-wavelength carrier collection. Designs with higher base diffusion length or thinner base were favored, and accordingly, devices with n+/p junction polarity were more radiation-hard than those with p+/n junction polarity.

Ryan D Hool↗