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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Low blow Charpy impact of silicon carbides

The room-temperature impact resistance of several commercial silicon carbides was examined using an instrumented pendulum-type machine and Charpy-type specimens. Energy balance compliance methods and fracture toughness approaches, both applicable to other ceramics, were used for analysis. The results illustrate the importance of separating the machine and the specimen energy contributions and confirm the equivalence of KIc and KId. The material's impact energy was simply the specimen's stored elastic strain energy at fracture.

Abe, H.↗
NASA NTRS1972

Infrared response measurements on radiation-damaged Si/Li/ detectors.

The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.

Sher, A. H.↗
NASA NTRS1989

HgCdTe 256x256 NWIR FPA

Researchers developed a HgCdTe 256x256 focal plane array (FPA) which operates in the 1 to 5 micron band. This is presently the largest demonstrated HgCdTe FPA. The detector material is HgCdTe on sapphire (PACE-1 technology) which has a low thermal expansion mismatch with silicon. The multiplexer is a CMOS FET-switch device processed through a commercial silicon foundry. The multiplexer input is direct injection and the charge capacity is about 2 times 10 to the 7th power electrons. The kTC limited read noise is 400 electrons. Researchers demonstrated high background imaging using the device. The broadband quantum efficiency is measured to be 59 percent. Dark currents less than 0.1 pA were measured at 77 K for detectors processed on PACE-1 material with 4.9 microns cutoff. The dark currents decrease as the temperature is lowered, and researchers are presently studying the T less than 77 K characteristics. The interconnect yield is greater than 95 percent. The devices are available for astronomical applications.

Vural, Kadri↗
NASA NTRS1980

Effect of milling and leaching on the structure of sintered silicon

The effects of attrition milling and acid leaching on the sintering behavior and the resultant structures of two commercial silicon powders were investigated. Sintering was performed in He for 16 hours at 1200, 1250, and 1300 C. Compacts of as-received Si did not densify during sintering. Milling reduced the average particle size to below 0.5 microns and enhanced densification (1.75 g/cc). Leaching milled Si further enhanced densification (1.90 g/cc max.) and decreased structural coarsening. After sintering, the structure of the milled and leached powder compacts appears favorable for the production of reaction bonded silicon nitride.

Yeh, H. C.↗
NASA NTRSDate not supplied

Investigation of Ionic Liquids Isolated Iron for Ductile Iron Castings

As research continues for missions beyond low-Earth orbit, in-situ resource utilization (ISRU) methods are critical. To colonize the Lunar or Martian surface, the ability to manufacture mechanical and structural components with local resources is essential. Ionic liquids are being studied at NASA Marshall Space Flight Center (MSFC) to harvest elemental metals from meteorites and oxides in regolith. In this investigation, the viability of casting ductile iron using ionic liquids sourced iron and nickel was explored given ductile iron’s range of applications and performance as an as-cast alloy. Small ingots were produced using commercial silicon, manganese, and magnesium with carbon sourced from the by-products of a life support system currently being tested at MSFC. Samples were cast and compared to commercial ductile iron with phase transformation diagrams, microstructures, and hardness. Results showed ionic liquids sourced elements are a viable source of elemental alloying materials for a range of ductile iron alloys.

Blake Stewart↗
NASA NTRS2011

Automated Cryocooler Monitor and Control System

A system was designed to automate cryogenically cooled low-noise amplifier systems used in the NASA Deep Space Network. It automates the entire operation of the system including cool-down, warm-up, and performance monitoring. The system is based on a single-board computer with custom software and hardware to monitor and control the cryogenic operation of the system. The system provides local display and control, and can be operated remotely via a Web interface. The system controller is based on a commercial single-board computer with onboard data acquisition capability. The commercial hardware includes a microprocessor, an LCD (liquid crystal display), seven LED (light emitting diode) displays, a seven-key keypad, an Ethernet interface, 40 digital I/O (input/output) ports, 11 A/D (analog to digital) inputs, four D/A (digital to analog) outputs, and an external relay board to control the high-current devices. The temperature sensors used are commercial silicon diode devices that provide a non-linear voltage output proportional to temperature. The devices are excited with a 10-microamp bias current. The system is capable of monitoring and displaying three temperatures. The vacuum sensors are commercial thermistor devices. The output of the sensors is a non-linear voltage proportional to vacuum pressure in the 1-Torr to 1-millitorr range. Two sensors are used. One measures the vacuum pressure in the cryocooler and the other the pressure at the input to the vacuum pump. The helium pressure sensor is a commercial device that provides a linear voltage output from 1 to 5 volts, corresponding to a gas pressure from 0 to 3.5 MPa (approx. = 500 psig). Control of the vacuum process is accomplished with a commercial electrically operated solenoid valve. A commercial motor starter is used to control the input power of the compressor. The warm-up heaters are commercial power resistors sized to provide the appropriate power for the thermal mass of the particular system, and typically provide 50 watts of heat. There are four basic operating modes. "Cool " mode commands the system to cool to normal operating temperature. "Heat " mode is used to warm the device to a set temperature near room temperature. "Pump " mode is a maintenance function that allows the vacuum system to be operated alone to remove accumulated contaminants from the vacuum area. In "Off " mode, no power is applied to the system.

Britcliffe, Michael J.↗
NASA NTRS1974

Thick film silicon growth techniques

One inch wide silicon ribbons up to 14 inches long have been produced from graphite dies. Several different techniques have been employed to improve the semiconductor purity of silicon. This has resulted in a general increase in quality although the techniques involved have not been optimized. The power factor of uncoated ribbon solar cells produced for material evaluation has increased to approximately 75% of those evaluation cells made from commercial silicon. The present limitation is believed due to low lifetime. Additional work has continued with new die materials; however, only composite dies of SiO2 and C show significant potential at this time.

Bates, H. E.↗
DOE OSTI2026

Linear viscoelastic measurements of commerical therapy putties for design and intuition

This dataset complements the publication Mapping Linear Viscoelasticity for Design and Tactile Intuition (Corman & Ewoldt, 2019). It contains rigorous shear rheometry measurements for six commercial silicone putties, including creep recovery, SAOS, LAOS, and stress relaxation. Additional, unpublished data was generated as part of a graduate rheology course taught by Randy Ewoldt at University of Illinois Urbana-Champaign. Together, these datasets provide a comprehensive example of linear viscoelasticity of a commercial material. The collection is intended both as a pedagogical resource for developing physical intuition in linear viscoelasticity and as a reference dataset for data interpretation, model fitting, and comparative rheological analysis.

C. Marsh, Maxwell↗
DOE OSTI2023

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1988

A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers

A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers is described. This method consists of a wet chemical treatment (surface cleaning, oxidation in solution, and measurement in HF solution) to passivate the silicon surfaces, a laser diode array for carrier excitation, and a microwave bridge measuring system which is more sensitive than the microwave systems used previously for lifetime measurement. Representative experimental data are presented to demonstrate this technique. The result reveals that this method is useful for the determination of bulk lifetime of commercial silicon wafers.

Luke, Keung L.↗
DOE OSTI2023

On the 3D printability of silicone-based adhesives via viscous paste extrusion

Silicone, a commonly used household and construction adhesive, filler, or sealant, is also known for its flexibility, thermal stability, and insulating properties. It is viable as a conformally 3D-printed elastomeric matrix for flexible electronics and biomedical applications. Since most of the popular 3D printing methods use precise print specifications and defined resolution, this study explored the 3D printability of commercial silicone adhesives via a paste extrusion setup. Its viscoelastic and composition properties including the dimensional accuracy and mechanical properties of printed objects using controlled print parameters have been investigated. Finally, these experimental processes in 3D printing should pave the way in using materials originally intended for household use.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Inverse-Designed Photonics for Semiconductor Foundries

Silicon photonics is becoming a leading technology in photonics, displacing traditional fiber optic transceivers and enabling new applications. Further improving the density and performance of silicon photonics, however, has been challenging due to the large size and limited performance of traditional semianalytically designed components. Automated optimization of photonic devices using inverse design is a promising path forward but has, until now, faced difficulties in producing designs that can be fabricated reliably at scale. In this paper we experimentally demonstrate four inverse-designed devices made successfully in a commercial silicon photonics foundry: a spatial mode multiplexer, wavelength demultiplexer, 50–50 directional coupler, and 3-way power splitter. These devices are efficient, robust to fabrication variability, and compact, with footprints only a few micrometers across. They pave the way forward for the widespread practical use of inverse design.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Improved toughness of refractory compounds

The concept of grain-boundary-engineering through elimination of the grain-boundary silicate phase in silicon nitride was developed. The process involved removal of the silica from the nitride powder via a thermal treatment coupled with the use of nitride additives to compensate the remaining oxygen. Magnesium and aluminum nitrides are found to be the most effective additive for use as oxygen compensators. Strength decreases at elevated temperatures are not observed in the alumina containing material. The creep rate of a dual additive sialon composition was two orders of magnitude lower at 1400 C than commercial silicon nitride. A cursory analysis of the creep mechanism indicate that grain-boundary sliding is avoided through elimination of the grain-boundary silicate phase.

Wright, T. R.↗
DOE OSTI2024

Binary Cation Matrix Electrolyte and Its Effect on Solid Electrolyte Interphase Suppression and Evolution of Si Anode

An unstable solid electrolyte interphase (SEI) has been recognized as one of the biggest challenges to commercializing silicon (Si) anodes for high-energy-density batteries. This work thoroughly investigates a binary cation matrix of Mg 2+ +Li + electrolyte and its role in SEI development, suppression, and evolution of a Si anode. Findings demonstrate that introducing Mg ions dramatically reduces the SEI growth before lithiation occurs, primarily due to the suppression of solvent reduction, particularly ethylene carbonate (EC) reduction. The Mg 2+ alters the Li + cation solvation environment as EC preferably participates in the oxophyllic Mg 2+ solvation sheath, thereby altering the solvent reduction process, resulting in a distinct SEI formation mechanism. The initial SEI formation before lithiation is reduced by 70% in the electrolyte with the presence of Mg 2+ cations. While the SEI continues to develop in the postlithiation, the inclusion of Mg ions results in an approximately 80% reduction in the postlithiation SEI growth. Continuous electrochemical cycling reveals that Mg 2+ plays a crucial role in stabilizing the deep-lithiated Si phases, which effectively mitigates side reactions, resulting in controlled SEI growth and stable interphase while eliminating complex Li x Si y formation. Mg ions promote the development of a notably more rigid and homogeneous SEI, characterized by a reduced dissipation (ΔD) in the Mg 2+ +Li + ion matrix compared to the solely Li + system. In conclusion, this report reveals how the Mg 2+ +Li + ion matrix affects the SEI evolution, viscoelastic properties, and electrochemical behavior at the Si interface in real time, laying the groundwork for devising strategies to enhance the performance and longevity of Si-based next-generation battery systems.

25 ENERGY STORAGE↗
DOE OSTI2022

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

42 ENGINEERING↗
DOE OSTI2023

Self-powered perovskite photon-counting detectors

Metal-halide perovskites (MHPs) have been successfully exploited for converting photons to charges or vice versa in applications of solar cells, light-emitting diodes and solar fuels for which all these applications involve strong light. Here we show that self-powered polycrystalline perovskite photodetectors can rival the commercial silicon photomultipliers (SiPMs) for photon counting. The photon-counting capability of perovskite photon-counting detectors (PCDs) is mainly determined by shallow traps, despite that deep traps also limit charge-collection efficiency. Two shallow traps with energy depth of 5.8 ± 0.8 millielectronvolts (meV) and 57.2 ± 0.1 meV are identified in polycrystalline methylammonium lead triiodide, which mainly stay at grain boundaries and the surface, respectively. We show that these shallow traps can be reduced by grain-size enhancement and surface passivation using diphenyl sulfide, respectively. It greatly suppresses dark count rate (DCR) from >20,000 counts per second per square millimetre (cps mm –2 ) to 2 cps mm –2 at room temperature, enabling much better response to weak light than SiPMs. The perovskite PCDs can collect γ-ray spectra with better energy resolution than SiPMs and maintain performance at high temperatures up to 85 °C. The zero-bias operation of perovskite detectors enables no drift of noise and detection property. Finally, this study opens a new application of photon counting for perovskites that uses their unique defect properties.

47 OTHER INSTRUMENTATION↗