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Total ionizing dose and displacement damage testing is performed to characterize and determine the feasibility of candidate electronics for NASA spacecraft and program use. AEROSPACE ENVIRONMENTS
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
This presentation covers the basis and challenges for radiation effects in electronic systems. The three main types of radiation effects in electronics are: 1) total ionizing dose (TID), 2) total non-ionizing dose (TNID) / displacement damage dose (DDD), and 3) single-event effect (SEE). Some content on relevant examples of effects, current concerns, and possible environmental model-driven solutions are also included.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear, and hybrid devices.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Radiation effects in photonic and microelectronic components can impact the performance of high-speed digital optical data link in a variety of ways. This segment of the short course focuses on radiation effects in digital optical data links operating in the MHz to GHz regime. (Some of the information is applicable to frequencies above and below this regime) The three basic component level effects that should be considered are Total Ionizing Dose (TID), Displacement Damage Dose (DDD) and Single Event Effects (SEE). In some cases the system performance degradation can be quantified from component level tests, while in others a more holistic characterization approach must be taken. In Section 2.0 of this segment of the Short Course we will give a brief overview of the space radiation environment follow by a summary of the basic space radiation effects important for microelectronics and photonics listed above. The last part of this section will give an example of a typical mission radiation environment requirements. Section 3.0 gives an overview of intra-satellite digital optical data link systems. It contains a discussion of the digital optical data link and it's components. Also, we discuss some of the important system performance metrics that are impacted by radiation effects degradation of optical and optoelectronic component performance. Section 4.0 discusses radiation effects in optical and optoelectronic components. While each component effect will be discussed, the focus of this section is on degradation of passive optical components and SEE in photodiodes (other mechanisms are covered in segment II of this short course entitled "Photonic Devices with Complex and Multiple Failure Modes"). Section 5.0 will focus on optical data link system response to the space radiation environment. System level SEE ground testing will be discussed. Then we give a discussion of system level assessment of data link performance when operating in the space radiation environment.
NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion-induced single-event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.
The measured degradation of epitaxial shallow homojunction n(+)/p InP solar cells under 1 MeV electron irradiation is correlated with that measured under 3 MeV proton irradiation based on 'displacement damage dose'. The measured data is analyzed as a function of displacement damage dose from which an electron to proton dose equivalency ratio is determined which enables the electron and proton degradation data to be described by a single degradation curve. It is discussed how this single curve can be used to predict the cell degradation under irradiation by any particle energy. The degradation curve is used to compare the radiation response of InP and GaAs/Ge cells on an absolute damage energy scale. The comparison shows InP to be inherently more resistant to displacement damage deposition than the GaAs/Ge.
When determining the best solar cell technology for a particular space flight mission, accurate prediction of solar cell performance in a space radiation environment is essential. The current methodology used to make such predictions requires extensive experimental data measured under both electron and proton irradiation. Due to the rising cost of accelerators and irradiation facilities, such extensive data sets are expensive to obtain. Moreover, with the rapid development of novel cell designs, the necessary data are often not available. Therefore, a method for predicting cell degradation based on limited data is needed. Such a method has been developed at the Naval Research Laboratory based on damage correlation using 'displacement damage dose' which is the product of the non-ionizing energy loss (NIEL) and the particle fluence. Displacement damage dose is a direct analog of the ionization dose used to correlate the effects of ionizing radiations. In this method, the performance of a solar cell in a complex radiation environment can be predicted from data on a single proton energy and two electron energies, or one proton energy, one electron energy, and Co(exp 60) gammas. This method has been used to accurately predict the extensive data set measured by Anspaugh on GaAs/Ge solar cells under a wide range of electron and proton energies. In this paper, the method is applied to InP solar cells using data measured under 1 MeV electron and 3 MeV proton irradiations, and the calculations are shown to agree well with the measured data. In addition to providing accurate damage predictions, this method also provides a basis for quantitative comparisons of the performance of different cell technologies. The performance of the present InP cells is compared to that published for GaAs/Ge cells. The results show InP to be inherently more resistant to displacement energy deposition than GaAs/Ge.
The NASA Electronic Parts and Packaging (NEPP) Program Sensor Technology Commercial Sensor Survey task is geared toward benefiting future NASA space missions with low-cost, short-duty-cycle, visible imaging needs. Such applications could include imaging for educational outreach purposes or short surveys of spacecraft, planetary, or lunar surfaces. Under the task, inexpensive commercial grade CMOS sensors were surveyed in fiscal year 2007 (FY07) and three sensors were selected for total ionizing dose (TID) and displacement damage dose (DDD) tolerance testing. The selected sensors had to meet selection criteria chosen to support small, low-mass cameras that produce good resolution color images. These criteria are discussed in detail in [1]. This document discusses the progress of radiation testing on the Micron and OmniVision sensors selected in FY07 for radiation tolerance testing.
Single Event Transients (SETs) originating in linear bipolar integrated circuits are known to undermine the reliability of electronic systems operating in the radiation environment of space. Ionizing particle radiation produces a variety of SETs in linear bipolar circuits. The extent to which these SETs threaten system reliability depends on both their shapes (amplitude and width) and their threshold energies. In general, SETs with large amplitudes and widths are the most likely to propagate from a bipolar circuit's output through a subsystem. The danger these SET pose is that, if they become latched in a follow-on circuit, they could cause an erroneous system response. Long-term exposure of linear bipolar circuits to particle radiation produces total ionizing dose (TID) and/or displacement damage dose (DDD) effects that are characterized by a gradual degradation in some of the circuit's electrical parameters. For example, an operational amplifier's gain-bandwidth product is reduced by exposure to ionizing radiation, and it is this reduction that contributes to the distortion of the SET shapes. In this paper, we compare SETs produced in a pristine LM124 operational amplifier with those produced in one exposed to ionizing radiation for three different operating configurations - voltage follower (VF), inverter with gain (IWG), and non-inverter with gain (NIWG). Each configuration produces a unique set of transient shapes that change following exposure to ionizing radiation. An important finding is that the changes depend on operating configuration; some SETs decrease in amplitude, some remain relatively unchanged, some become narrower and some become broader.
The NASA Electronic Parts and Packaging (NEPP) Program Sensor Technology Commercial Sensor Survey task is geared toward benefiting future NASA space missions with low-cost, short-duty-cycle, visible-wavelength imaging needs. Such applications could include imaging for educational outreach purposes or short surveys of spacecraft, planetary, or lunar surfaces. Under the task, inexpensive, low-power, commercial grade CMOS sensors were surveyed in fiscal year 2007 (FY07), and three sensors were selected and tested for total ionizing dose (TID) and displacement damage dose (DDD) tolerance in fiscal year 2008 (FY08). The selected sensors had to meet selection criteria chosen to support small, low-mass cameras that produce good resolution color images. The commercial CMOS sensors tested under the task in FY08 showed very promising response to typical outreach and survey camera TID and DDD levels. In fiscal year 2009 (FY09), the survey was broadened to include two additional, similar sensor products. This compendium provides results for all radiation testing performed on the Micron and OmniVision sensors that were selected for radiation tolerance testing in FY08 and FY09.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).
Sensitivity of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
We present basic information on different types of radiation effects, including total ionizing dose, displacement damage, and single-event effects. The content is designed to educate space weather professionals, space operations professionals, and other science and engineering stakeholders.