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At least 37 records · Page 2

Organic electronic devices using phthalimide compounds

Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

14 SOLAR ENERGY↗

Organic electronic devices using phthalimide compounds

Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

14 SOLAR ENERGY↗

Methods for synchronizing a countdown routine of a timer key and electronic device

A timer key relating to monitoring a countdown time of a countdown routine of an electronic device is disclosed. The timer key comprises a processor configured to respond to a countdown time associated with operation of the electronic device, a display operably coupled with the processor, and a housing configured to house at least the processor. The housing has an associated structure configured to engage with the electronic device to share the countdown time between the electronic device and the timer key. The processor is configured to begin a countdown routine based at least in part on the countdown time, wherein the countdown routine is at least substantially synchronized with a countdown routine of the electronic device when the timer key is removed from the electronic device. A system and method for synchronizing countdown routines of a timer key and an electronic device are also disclosed.

47 OTHER INSTRUMENTATION↗

Energetic potting materials, electronic devices potted with the energetic potting materials, and related methods

A potted electronic device comprises an electronic device at least partially encapsulated by an energetic potting material. The energetic potting material comprises a halogenated urethane binder and a metal fuel dispersed within the halogenated urethane binder. Related energetic potting materials and methods of forming electronic devices at least partially encapsulated with the energetic potting materials are also disclosed.

36 MATERIALS SCIENCE↗

Bi-directional magnetic resonance based wireless power transfer for electronic devices

In order to power or charge electronic devices wirelessly, a bi-directional wireless power transfer method has been proposed and experimentally investigated. In the proposed design, two receiving coils are used on both sides of a transmitting coil along its central axis to receive the power wirelessly from the generated magnetic fields through strongly coupled magnetic resonance. It has been observed experimentally that the maximum power transfer occurs at the operating resonant frequency for optimum electric load connected across the receiving coils on both side. The optimum wireless power transfer efficiency is 88% for the bi-directional power transfer technique compared 84% in the one side receiver system. By adopting the developed bi-directional power transfer method, two electronic devices can be powered up or charged simultaneously instead of a single device through usual one side receiver system without affecting the optimum power transfer efficiency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

47 OTHER INSTRUMENTATION↗

System and method for organic electronic device patterning

A method for fabricating an organic electronic device comprises providing a plurality of photoresist structures on a substrate, the substrate having a first electrode layer, the photoresist structures having a bottom surface attached to the substrate and a top surface opposite the bottom surface, the top surface having a dimension greater than a dimension of the bottom surface, positioning a mask over the structures, the mask having a plurality of openings, and depositing an emissive material over the substrate through at least one of the plurality of openings to form at least one emissive element. An organic electronic device and a method of fabricating an organic electronic component are also described.

Forrest, Stephen R.↗

Networked Control and Optimization for Widescale Integration of Power Electronic Devices in Residential Homes

Power electronics devices are emerging at residential houses, including electric vehicles, energy storage systems, solar photovoltaic systems, and variable-speed air conditioners. Little work has been done on scalable and end-to-end architectures for integrating and engaging large number of residential behind-the-meter assets to provide grid services. In this paper, a framework for integration of a demand management system, home energy management system, and residential smart inverters is presented. Full measured results of inverter response to control signals is also presented.

Starke, Michael↗

Wide temperature range electronic device with lead attachment

A electronic device including lead attachment structure which permits operation of the devices over a wide temperature range is reported. The device comprises a core conductor having a thin coating of metal thereon whereby only a limited amount of coating material is available to form an alloy which bonds the core conductor to the device electrode, the electrode composition thus being affected only in the region adjacent to the lead.

Farrell, R.↗

Calcium chloride electron injection/extraction layers in organic electronic devices

Nontoxic calcium chloride (CaCl{sub 2}) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5 nm CaCl{sub 2} was 3.5 V and 21 960 cd/m{sup 2}, respectively. OLED with 1.5 nm CaCl{sub 2} possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5 nm CaCl{sub 2} was comparable to that of the control device with LiF. Therefore, CaCl{sub 2} has the potential to be used as the CBL for organic electronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Forecasting of electronic devices lifetime on the basis of activation models of functional parameters drift

We propose a model of functional parameters drift for electronic devices, allowing predicting their lifetime. The method of model parameters estimation is developed. The developed model allows optimizing the accelerated tests modes, taking into account the complex impact of stress factors. The results are applicable for modern electronic devices with a failure rate less than 1 FIT. The results are applicable if the physical and chemical processes leading to electronic devices degradation have an activation mechanism; the activation process is due to the temperature.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Cumulative Interference to Aircraft Radios from Multiple Portable Electronic Devices

Cumulative interference effects from portable electronic devices (PEDs) located inside a passenger cabin are conservatively estimated for aircraft radio receivers. PEDs' emission powers in an aircraft radio frequency band are first scaled according to their locations' interference path loss (IPL) values, and the results are summed to determine the total interference power. The multiple-equipment-factor (MEF) is determined by normalizing the result against the worst case contribution from a single device. Conservative assumptions were made and MEF calculations were performed for Boeing 737's Localizer, Glide-slope, Traffic Collision Avoidance System, and Very High Frequency Communication radio systems where full-aircraft IPL data were available. The results show MEF for the systems to vary between 10 and 14 dB. The same process was also used on the more popular window/door IPL data, and the comparison show the multiple-equipment-factor results came within one decibel (dB) of each other.

Nguyen, Truong X.↗

Scanning method for screening of electronic devices

A visualization method for screening electronic devices is provided. In accordance with the disclosed method, a probe is applied to a grid of multiple points on the circuit, and an output produced by the circuit in response to the stimulus waveform is monitored for each of multiple grid points where the probe is applied. A power spectrum analysis (PSA) produces a power spectrum amplitude, in each of one or more frequency bins, on the monitored output for each of the multiple grid points. The PSA provides a respective pixel value for each of the multiple grid points. An image is displayed, in which image portions representing the multiple grid points are displayed with the respective pixel values.

47 OTHER INSTRUMENTATION↗

Simulation of Ultra-Small Electronic Devices: The Classical-Quantum Transition Region

Concern is increasing about how quantum effects will impact electronic device operation as down-scaling continues along the SIA Roadmap through 2010. This document describes part of a new semiconductor device modeling (SDM) program at NAS to investigate these concerns by utilizing advanced NAS and third-party numerical computation software to rapidly implement and investigate electronic device models including quantum effects. This SDM project will investigate quantum effects in devices in the classical-quantum transition region, especially sub-0.1 mm MOSFETs. Specific tasks planned for this project include the use of quantum corrections to the classical drift-diffusion and hydrodynamic models of electron transport, arid the use of nominally quantum models including significant scattering.

Biegel, Bryan A.↗

Towards reproducible, scalable lateral molecular electronic devices

An approach to reproducibly fabricate molecular electronic devices is presented. Lateral nanometer-scale gaps with high yield are formed in Au/Pd nanowires by a combination of electromigration and Joule-heating-induced thermomechanical stress. The resulting nanogap devices are used to measure the electrical properties of small numbers of two different molecular species with different end-groups, namely 1,4-butane dithiol and 1,5-diamino-2-methylpentane. Fluctuations in the current reveal that in the case of the dithiol molecule devices, individual molecules conduct intermittently, with the fluctuations becoming more pronounced at larger biases.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

A Comprehensive Review toward the State-of-the-Art in Failure and Lifetime Predictions of Power Electronic Devices

This paper discusses various types of failure mechanisms, precursor parameters, and accelerated aging- based procedures to estimate the remaining life of power electronic devices. Special attention has been given to summarize the different techniques typically used for measuring the junction temperature, because it plays a vital role during accelerated aging and condition monitoring. We reviewed more than 250 papers, and the references list 139 of them in order to explain and address the advantages and disadvantages of various techniques towards the reliability prognosis. Thus, this paper can be considered as an expedient reference to conduct future research on lifetime prediction of existing power electronic devices.

42 ENGINEERING↗