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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Epitaxial growth of Hg/1-x/Cd/x/Te by chemical vapor transport

The chemical vapor transport technique was applied for the first time to the growth of Hg(1-x)Cd(x)Te epitaxial layers on CdTe substrates using a preannealed source material of Hg(0.8)Cd(0.2)Te. The experiment took place in a pretreated ampoule loaded with source material, HgI2 transport agent, and substrate and sealed under a residual pressure of about 10 to the -5th torr. The temperature of the source region was 590 C and that of the deposition zone 535 C with a nearly sigmoidal shaped profile between the end temperatures. The change in appearance of the substrate surface during the experiment is described, and the structures of the surface of the Hg(1-x)Cd(x)Te layer and of the layer itself as revealed by Nomarski contrast illumination and Laue X-ray diffraction, respectively, are discussed.

Wiedemeier, H.↗
NASA NTRS1987

Liquid phase epitaxy growth of GaAs/GaAlAs multi-quantum well structures

Experiments in liquid phase epitaxial fabrication of thin GaAs/GaAlAs layers over a planar substrates have been carried out. Layer thicknesses smaller than 300 A were routinely obtained, with the best result being 120 A. Interface sharpness between the layers is approximately 10 A, which is comparable to OMCVD results, but the layers' thicknesses are usually not uniform. Of the experimental parameters, the growth time and the cooling rate seem to have the largest effect on the obtained layer thickness, while the growth temperature and the substrate crystallographic orientation produce less noticeable effects. Quantum effects in the grown layers were observed by photoluminescence measurements.

Cser, J.↗
NASA NTRS1980

Epitaxial growth of single crystal films

An experiment in gallium arsenide liquid phase epitaxy was performed successfully on the SPAR 6 flight October 17, 1979. The design, fabrication, and testing of the experimental apparatus, and the performance and results of the experiment are discussed.

Lind, M. D.↗
NASA NTRS1974

Epitaxial growth of 6H silicon carbide in the temperature range 1320 C to 1390 C

High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the grown direction perpendicular to the crystal c-axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen at temperatures in the range of 1320 to 1390 C. Epitaxial layers up to 80 microns thick were grown at rates of 0.4 microns/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and X-ray diffraction techniques were used to characterize the grown layers.

Will, H. A.↗
NASA NTRS1988

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Mii, Y. J.↗
NASA NTRS1976

Epitaxial growth of Ga1-xAlxAs on GaP

Technique, suitable for monolithic device fabrication methods, permits growth of LED structures on GaP substrates by liquid-phase epitaxial method, thus obviating needs for growing thick layers and for removing substrates. High efficiency infrared LED's can be developed as pumping sources for Nd:YAG lasers.

Woodall, J. M.↗
NASA NTRS2011

Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal

Hetero-epitaxial semiconductor materials comprising cubic crystalline semiconductor alloys grown on the basal plane of trigonal and hexagonal substrates, in which misfit dislocations are reduced by approximate lattice matching of the cubic crystal structure to underlying trigonal or hexagonal substrate structure, enabling the development of alloyed semiconductor layers of greater thickness, resulting in a new class of semiconductor materials and corresponding devices, including improved hetero-bipolar and high-electron mobility transistors, and high-mobility thermoelectric devices.

Park, Yeonjoon↗
NASA NTRS1988

Electron beam source molecular beam epitaxial growth of analog graded Al(x)Ga(1-x)As ballistic transistors

A new method has been developed for the growth of graded band-gap Al(x)Ga(1-x)As alloys by molecular beam epitaxy which is based upon electron beam evaporation of the group III elements. The metal fluxes are measured and feedback controlled using a modulated ion gauge sensor. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables growth of variable band-gap III-V alloys with arbitrary composition profiles. This new technique is demonstrated by synthesis of analog graded Al(x)Ga(1-x)As unipolar ballistic electron transistors.

Malik, Roger J.↗
NASA NTRS1985

Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures

GaAs/InAs(100) multiple interface structures involving 7.4 percent lattice mismatch have been fabricated via molecular beam epitaxy and examined via transmission electron microscopy. It is found that high-quality, dislocation-free interfaces involving such high lattice mismatch can indeed be experimentally realized for very thin layers provided proper care is given to achieve a balance between the growth kinetics and the thermodynamics leading to the equilibrium ground state of the strained layer. The compressive strain is homogeneously accommodated and a tetragonal distortion is induced in the InAs layer with a perpendicular lattice constant in close agreement with that expected on the basis of the continuum theory and elastic constants of bulk InAs.

Grunthaner, F. J.↗
NASA NTRS1988

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

Benz, R. G., II↗
NASA NTRS1987

Phase equilibria and liquid phase epitaxy growth of PbSnSeTe lattice matched to PbSe

The necessary phase diagram data for growing lattice-matched layers of PbSnSeTe on PbSe are presented. Solid compounds of Pb(1-x)Sn(x)Se(1-y)Te(y) lattice-matched to PbSe were grown from liquid melts consisting of (Pb/1-x/Sn/x/)(1-z)(Se/1-y/Te/y/)(z); phase equilibria data were determined together with liquidus data for values of x(liquid) from 0 to 40 percent and y(liquid) from 0 to 40 percent for temperatures between 450 and 540 C. It was found that relatively large amounts of Te must be added to the melt to achieve lattice matching because of its low segregation coefficient relative to Se. A significant lattice-pulling effect was discovered for the 5-percent Sn case, and a similar effect is expected for the 10- and 20-percent Sn cases.

Mccann, Patrick J.↗
NASA NTRS1990

Atmospheric pressure organometallic vapor-phase epitaxial growth of (Al/x/Ga/1-x/)0.51In0.49P (x from 0 to 1) using trimethylalkyls

This paper describes growth of (Al/x/Ga/1-x)0.51In0.49P layers (with x from 0 to 1) lattice-matched to (001)-oriented GaAs substrates by atmospheric-pressure OMVPE, using trimethylindium, trimethylaluminum, and trimethylgallium and PH3 as source materials in a horizontal reactor. Excellent surface morphologies were obtained over the entire range of Al compositions at a growth temperature of 680 C. Photoluminescence (PL) was observed for all samples with x values not below 0.52, with PL peak energies as high as 2.212 eV. The PL FWHM for Ga(0.51)In(0.49)P was 7.2 meV at 10 K and 35 meV at 300 K. At 10 K, the PL intensity was nearly a constant over the composition range from x = 0 to 0.52.

Cao, D. S.↗
NASA NTRS1998

Energetics and Dynamics of GaAs Epitaxial Growth via Quantum Wave Packet Studies

The dynamics of As(sub 2) molecule incorporation into the flat Ga-terminated GaAs(100) surface is studied computationally. The time-dependent Schrodinger equation is solved on a two-dimensional potential energy surface obtained using density functional theory calculations. The probabilities of trapping and subsequent dissociation of the molecular As(sub 2) bond are calculated as a function of beam translational energy and vibrational quantum number of As(sub 2).

Dzegilenko, Fedor N.↗
NASA NTRS2006

Recent Results from Epitaxial Growth on Step Free 4H-SiC Mesas

This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.

Neudeck, Philip G.↗