Analytical studies of contact of nominally flat surfaces - Effect of previous loading
Previous plastic loading deformation effect on contact area, print number, size distribution and thermal conductivity for flat surfaces
Mikic, B.↗
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Application of a one-strip integral method to the unsteady supersonic aerodynamics of an inclined flat surface
The method of integral relations is applied in a one-strip approximation to the perturbation equations governing small motions of an inclined, sharp-edged, flat surface about the mean supersonic steady flow. Algebraic expressions for low reduced-frequency aerodynamics are obtained and a set of ordinary differential equations are obtained for general oscillatory motion. Results are presented for low reduced-frequency aerodynamics and for the variation of the unsteady forces with frequency. The method gives accurate results for the aerodynamic forces at low reduced frequency which are in good agreement with available experimental data. However, for cases in which the aerodynamic forces vary rapidly with frequency, the results are qualitatively correct, but of limited accuracy. Calculations indicate that for a range of inclination angles near shock detachment such that the flow in the shock layer is low supersonic, the aerodynamic forces vary rapidly both with inclination angle and with reduced frequency.
Bennett, R. M.↗
A leading edge heating array and a flat surface heating array: Final design
A heating array is described for testing full-scale sections of the leading edge and lower fuselage surfaces of the shuttle. The heating array was designed to provide a tool for development and acceptance testing of leading edge segments and large flat sections of the main body thermal protection system. The array was designed using a variable length module concept to meet test requirements using interchangeable components from one test configuration in another configuration. Heat generating modules and heat absorbing modules were employed to achieve the thermal gradient around the leading edge. A support was developed to hold the modules to form an envelope around a variety of leading edges; to supply coolant to each module; the support structure and to hold the modules in the flat surface heater configuration. An optical pyrometer system mounted within the array was designed to monitor specimen surface temperatures without altering the test article's surface.
Source record↗
Atomically Flat Surfaces Developed for Improved Semiconductor Devices
New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.
Powell, J. Anthony↗
Improved Silicon Carbide Crystals Grown From Atomically Flat Surfaces
The NASA Glenn Research Center is demonstrating that atomically flat (i.e., step-free) silicon carbide (SiC) surfaces are ideal for realizing greatly improved wide bandgap semiconductor films with lower crystal defect densities. Further development of these improved films could eventually enable harsh-environment electronics beneficial to jet engine and other aerospace and automotive applications, as well as much more efficient and compact power distribution and control. The technique demonstrated could also improve blue-light lasers and light-emitting-diode displays.
Neudeck, Philip G.↗
Infrared emission from a V-shaped metal groove compared with that from a flat surface of the same metal.
Continuous IR radiation source using electrically heated Mo ribbon, comparing emission from V shape and flat portions
Burkhard, D. G.↗
An empirical equation for the coefficient of heat transfer to a flat surface from a plane heated-air jet directed tangentially to the surface
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Selna, J.↗
Flow characteristics of an air jet impinging on a flat surface
Survey develops adequate heat transfer correlations for design use. Flow characteristics studies include - potential core length, velocity and pressure distribution through the jet, and spread of jet and velocity decay along jet axis.
Gauntner, J. W.↗
A leading edge heating array and a flat surface heating array - operation, maintenance and repair manual
A general description of the leading edge/flat surface heating array is presented along with its components, assembly instructions, installation instructions, operation procedures, maintenance instructions, repair procedures, schematics, spare parts lists, engineering drawings of the array, and functional acceptance test log sheets. The proper replacement of components, correct torque values, step-by-step maintenance instructions, and pretest checkouts are described.
Source record↗
On the impingement of supersonic jet on a normal flat surface
An improved method, based on one strip approximation of the method of integral relations which was reported originally by Belov, Ginzburg and Shub (1973), is presented for the calculation of flow parameters in the impingement region of a supersonic, underexpanded jet striking a normal surface located within the first cell. The results are presented for two impingement conditions and found to be in good agreement with the experimental data.
Pamadi, B. N.↗
Effects of Ground Proximity on the Thrust of a Simple Downward-directed Jet Beneath a Flat Surface
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Spreemann, Kenneth P↗
Investigation of Jet Effects on a Flat Surface Downstream of the Exit of a Simulated Turbojet Nacelle at a Free-stream Mach Number of 1.39
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Bressette, Walter E↗
An Empirical Equation for the Coefficient of Heat Transfer to a Flat Surface from a Plane Heated-air Jet Directed Tangentially to the Surface
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HEAT TRANSMISSION↗
Experimental Studies of Spray Deposition on a Flat Surface in a Vacuum Environment
Cooling of spacecraft components in the space environment is an on-going research effort. The electronics used in modern spacecraft are always changing and the heat flux is increasing. New, one-of-a-kind missions require new approaches to thermal control. In this research, under vacuum conditions, a pulsed water spray impinged on a small disc, while a high speed data acquisition system recorded the temperature histories of this copper disc. The water droplets froze quickly and accumulated on the disc as the spray continued. After the spray stopped, the frozen water that remained on the disc then sublimated into the vacuum environment and cooled the disc. This paper examines two important aspects of this process: 1) the difference in spray start up and shutdown in a vacuum environment versus in a standard atmospheric pressure environment, and 2) the water utilization efficiency in a vacuum environment due to the effects of drop trajectories and drop bouncing on the surface. Both phenomena play a role during spray cooling in a vacuum. This knowledge should help spacecraft designers plan for spray cooling as an option to cool spacecraft electronics, human metabolic generated heat, and heat from other sources.
Spray Cooling↗
Self-Healing Polymer Materials for Wire Insulation, Polyimides, Flat Surfaces, and Inflatable Structures
Materials based on low melt polyimide, polyurea, or polyurethane chemistry have been developed which exhibit self-healing properties. These high performance polymers can be utilized either by themselves or in combination with microcapsule technology to deliver self-healing properties to electrical wire insulation or in other high performance, thin wall technologies such as inflatable structures.
Jolley, Scott T.↗
Accurate stratospheric particle size distributions from a flat plate collection surface
Flat plate particle collections have revealed the presence of a remarkable variety of both terrestrial and extraterrestrial material in the stratosphere. It is found that the ratio of terrestrial to extraterrestrial material and the nature of the material collected may vary significantly over short time scales. These fluctuations may be related to massive injections of volcanic ash, emissions from solid fuel rockets, or variations in the micrometeoroid flux. The variations in particle number density can be of great importance to the earth's atmospheric radiation balance, and, therefore, its climate. With the objective to assess the number density of solid particles in the stratosphere, an examination has been conducted of all particles exceeding 1 micron in average diameter for a representative suite of particles obtained from a single flat plate collection surface. Attention is given to solid particle size distributions in the stratosphere, and the origin of important stratospheric particle types.
Zolensky, M. E.↗
Electrical characterization of GaAs single crystal in direct support of M555 flight experiment
The exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out during the period ending May 1974. Two methods of obtaining the microwave skin depth, one for the mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space-related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.
Castle, J. G.↗
Electrical characterization of GaAs single crystal in direct support of M555 flight experiment
An exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out. Two methods of obtaining the microwave skin depth, one for mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.
Castle, J. G.↗