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At least 37 records · Page 2

Physics of failure analysis of Xilinx Flip Chip CCGA packages: effects of mission environments on properties of LP2 underfill and ATI lid adhesive materials

The Xilinx Virtex 4QV and 5QV (V4 and V5) are next-generation field-programmable gate arrays (FPGAs) for space applications. However, there have been concerns within the space community regarding the non-hermeticity of V4/V5 packages; polymeric materials such as the underfill and lid adhesive will be directly exposed to the space environment. In this study, reliability concerns associated with the non-hermeticity of V4/V5 packages were investigated by studying properties and behavior of the underfill and the lid adhesvie materials used in V4/V5 packages.

Suh, Jong-ook↗

Aeroflex Technology as Class-Y Demonstrator

Modern space field programmable gate array (FPGA) devices with increased functional density and operational frequency, such as Xilinx Virtex 4 (V4) and S (V5), are packaged in non-hermetic ceramic flip chip forms. These next generation space parts were not qualified to the MIL-PRF-38535 Qualified Manufacturer Listing (QML) class-V when they were released because class-V was only intended for hermetic parts. In order to bring Xilinx V5 type packages into the QML system, it was suggested that class-Y be set up as a new category. From 2010 through 2014, a JEDEC G12 task group developed screening and qualification requirements for Class-Y products. The Document Standardization Division of the Defense Logistics Agency (DLA) has completed an engineering practice study. In parallel with the class-Y efforts, the NASA Electronic Parts and Packaging (NEPP) program has funded JPL to study potential reliability issues of the class-Y products. The major hurdle of this task was the absence of adequate research samples. Figure 1-1 shows schematic diagrams of typical structures of class-Y type products. Typically, class-Y products are either in ceramic flip chip column grid array (CGA) or land grid array (LGA) form. In class-Y packages, underfill and heat spread adhesive materials are directly exposed to the spacecraft environment due to their non-hermeticity. One of the concerns originally raised was that the underfill material could degrade due to the spacecraft environment and negatively impact the reliability of the package. In order to study such issues, it was necessary to use ceramic daisy chain flip chip package samples so that continuity of flip chip solder bumps could be monitored during the reliability tests. However, none of the commercially available class-Y daisy chain parts had electrical connections through flip chip solder bumps; only solder columns were daisy chained, which made it impossible to test continuity of flip chip solder bumps without using extremely costly functional parts. Among space parts manufacturers who were interested in producing class-Y products, Aeroflex Microelectronic Solutions-HiRel had been developing assembly processes using their internal R&D classy type samples. In early 2012, JPL and Aeroflex initiated a collaboration to study reliability of the Aeroflex technology as a class-Y demonstrator.

Suh, Jong-ook↗

Reliability Assessment of Advanced Flip-clip Interconnect Electronic Package Assemblies under Extreme Cold Temperatures (-190 and -120 C)

Flip-chip interconnect electronic package boards have been assembled, underfilled, non-destructively evaluated and subsequently subjected to extreme temperature thermal cycling to assess the reliability of this advanced packaging interconnect technology for future deep space, long-term, extreme temperature missions. In this very preliminary study, the employed temperature range covers military specifications (-55 C to 100 C), extreme cold Martian (-120 C to 115 C) and asteroid Nereus (-180 C to 25 C) environments. The resistance of daisy-chained, flip-chip interconnects were measured at room temperature and at various intervals as a function of extreme temperature thermal cycling. Electrical resistance measurements are reported and the tests to date have not shown significant change in resistance as a function of extreme temperature thermal cycling. However, the change in interconnect resistance becomes more noticeable with increasing number of thermal cycles. Further research work has been carried out to understand the reliability of flip-chip interconnect packages under extreme temperature applications (-190 C to 85 C) via continuously monitoring the daisy chain resistance. Adaptation of suitable diagnostic techniques to identify the failure mechanisms is in progress. This presentation will describe the experimental test results of flip-chip testing under extreme temperatures.

thermal cycling↗

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

Zheng, Xinyu↗

Pressure-Sensor Assembly Technique

Nielsen Engineering & Research (NEAR) recently developed an ultrathin data acquisition system for use in turbomachinery testing at NASA Glenn Research Center. This system integrates a microelectromechanical- systems- (MEMS-) based absolute pressure sensor [0 to 50 psia (0 to 345 kPa)], temperature sensor, signal-conditioning application-specific integrated circuit (ASIC), microprocessor, and digital memory into a package which is roughly 2.8 in. (7.1 cm) long by 0.75 in. (1.9 cm) wide. Each of these components is flip-chip attached to a thin, flexible circuit board and subsequently ground and polished to achieve a total system thickness of 0.006 in. (0.15 mm). Because this instrument is so thin, it can be quickly adhered to any surface of interest where data can be collected without disrupting the flow being investigated. One issue in the development of the ultrathin data acquisition system was how to attach the MEMS pressure sensor to the circuit board in a manner which allowed the sensor s diaphragm to communicate with the ambient fluid while providing enough support for the chip to survive the grinding and polishing operations. The technique, developed by NEAR and Jabil Technology Services Group (San Jose, CA), is described below. In the approach developed, the sensor is attached to the specially designed circuit board, see Figure 1, using a modified flip-chip technique. The circular diaphragm on the left side of the sensor is used to actively measure the ambient pressure, while the diaphragm on the right is used to compensate for changes in output due to temperature variations. The circuit board is fabricated with an access hole through it so that when the completed system is installed onto a wind tunnel model (chip side down), the active diaphragm is exposed to the environment. After the sensor is flip-chip attached to the circuit board, the die is underfilled to support the chip during the subsequent grinding and polishing operations. To prevent this underfill material from getting onto the sensor s diaphragms, the circuit board is fabricated with two 25- micrometer-tall polymer rings, sized so that the diaphragms fit inside the rings once the chip is attached.

Pruzan, Daniel A.↗

Thin Film Characterization on Cu/SnAg Solder Interface for 3D Packaging Technologies

Copper is a commonly used interconnect metal in microelectronic interconnects due to its exceptional electrical and thermal properties. Particularly in applications of the 2.5 and 3D integration, Cu is utilized in through-silicon-vias (TSVs) and flip chip interconnects between microelectronic chips for providing miniaturization, lower power and higher performance than current 2D packaging approaches. Furthermore, SnAg capped Cu pillars are a common high-density interconnect technology for flip chip bonding. For these interconnects, specific properties of the Cu surface, such as roughness and cleanliness, are an important factor in the process to ensure quality solder bumps. During electroplating, tight processing parameters must be met so that defects are avoided, and high bump uniformity is achieved. An understanding of the interactions at the solder and Cu pillar interface is needed, based on the electroplating parameters, to determine the best method for populating solder on the wafer surface. In this study, surface treatment techniques such as oxygen plasma cleaning were performed on the Cu surfaces and the SnAg plating chemistry for depositing the solder were evaluated through hull cell testing to qualitatively determine the range of current densities to investigate. It was observed that current density while plating played a large role in solder bump deposition morphology. At the higher current densities greater than 60 mA/cm 2 , bump height non-uniformity and dendritic growth are observed and at lower current densities, less than or equal to 60 mA/cm 2 , uniform, continuous bump height occurred.

36 MATERIALS SCIENCE↗

CSP Manufacturing Challenges and Assembly Reliability

Although the expression of CSP is widely used by industry from suppliers to users, its implied definition had evolved as the technology has matured. There are "expert definition"- package that is up to 1.5 time die- or "interim definition". CSPs are miniature new packages that industry is starting to implement and there are many unresolved technical issues associated with their implementation. For example, in early 1997, packages with 1 mm pitch and lower were the dominant CSPs, whereas in early 1998 packages with 0.8 mm and lower became the norm for CSPs. Other changes included the use of flip chip die rather than wire bond in CSP. Nonetheless the emerging CSPs are competing with bare die assemblies and are becoming the package of choice for size reduction applications. These packages provide the benefits of small size and performance of the bare die or flip chip, with the advantage of standard die packages. The JPL-led MicrotypeBGA Consortium of enterprises representing government agencies and private companies have jointed together to pool in-kind resources for developing the quality and reliability of chip scale packages (CSPs) for a variety of projects. This talk will cover specifically the experience of our consortium on technology implementation challenges, including design and build of both standard and microvia boards, assembly of two types of test vehicles, and the most current environmental thermal cycling test results.

Ghaffarian, Reza↗

Reliability and Qualification of Hardware to Enhance the Mission Assurance of JPL/NASA Projects

Packaging Qualification and Verification (PQV) and life testing of advanced electronic packaging, mechanical assemblies (motors/actuators), and interconnect technologies (flip-chip), platinum temperature thermometer attachment processes, and various other types of hardware for Mars Exploration Rover (MER)/Mars Science Laboratory (MSL), and JUNO flight projects was performed to enhance the mission assurance. The qualification of hardware under extreme cold to hot temperatures was performed with reference to various project requirements. The flight like packages, assemblies, test coupons, and subassemblies were selected for the study to survive three times the total number of expected temperature cycles resulting from all environmental and operational exposures occurring over the life of the flight hardware including all relevant manufacturing, ground operations, and mission phases. Qualification/life testing was performed by subjecting flight-like qualification hardware to the environmental temperature extremes and assessing any structural failures, mechanical failures or degradation in electrical performance due to either overstress or thermal cycle fatigue. Experimental flight qualification test results will be described in this presentation.

PRTs↗

Measurements of a quantum bulk acoustic resonator using a superconducting qubit

Phonon modes at microwave frequencies can be cooled to their quantum ground state using conventional cryogenic refrigeration, providing a convenient way to study and manipulate quantum states at the single phonon level. Phonons are of particular interest because mechanical deformations can mediate interactions with a wide range of different quantum systems, including solid-state defects, superconducting qubits, and optical photons when using optomechanically active constructs. Phonons, thus, hold promise for quantum-focused applications as diverse as sensing, information processing, and communication. Here, we describe a piezoelectric quantum bulk acoustic resonator (QBAR) with a 4.88 GHz resonant frequency, which, at cryogenic temperatures, displays large electromechanical coupling strength combined with a high intrinsic mechanical quality factor, Q i ≈ 4.3 × 10 4 . Using a recently developed flip-chip technique, we couple this QBAR resonator to a superconducting qubit on a separate die and demonstrate the quantum control of the mechanics in the coupled system. Furthermore, this approach promises a facile and flexible experimental approach to quantum acoustics and hybrid quantum systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Advanced Embedded Active Assemblies for Extreme Space Applications

This work describes the development and evaluation of advanced technologies for the integration of electronic die within membrane polymers. Specifically, investigators thinned silicon die, electrically connecting them with circuits on flexible liquid crystal polymer (LCP), using gold thermo-compression flip chip bonding, and embedding them within the material. Daisy chain LCP assemblies were thermal cycled from -135 to +85degC (Mars surface conditions for motor control electronics). The LCP assembly method was further utilized to embed an operational amplifier designed for operation within the Mars surface ambient. The embedded op-amp assembly was evaluated with respect to the influence of temperature on the operational characteristics of the device. Applications for this technology range from multifunctional, large area, flexible membrane structures to small-scale, flexible circuits that can be fit into tight spaces for flex to fit applications.

lead bonding↗

Ultra-Thin, Flexible Electronics

Thinned die can be used to realize ultra-thin flexible electronics for applications such as conformal and wearable electronics. Three techniques have been developed to achieve this goal using thinned die: die flip chip bonded onto flexible substrates, die laminated onto LCP films, and die embedded in polyimide. A key to achieving each of these techniques is the thinning of die to a thickness of 50 microns or thinner. Conventional CMP processing can be used to thin to 50 microns. At 50 microns, the active die become flexible and must be handled by temporarily bonding them to a holder die, for further processing. Once bonded face down to the holder die, the active die can be further thinned by DRIE etching the exposed backside. The thinned die can then been packaged in or on the flexible substrate.

electronics packaging↗

Evaluation of advanced microelectronic fluxless solder-bump contacts for hybrid microcircuits

Technology for interconnecting monolithic integrated circuit chips with other components is investigated. The advantages and disadvantages of the current flip-chip approach as compared to other interconnection methods are outlined. A fluxless solder-bump contact technology is evaluated. Multiple solder-bump contacts were formed on silicon integrated circuit chips. The solder-bumps, comprised of a rigid nickel under layer and a compliant solder overlayer, were electroformed onto gold device pads with the aid of thick dry film photomasks. Different solder alloys and the use of conductive epoxy for bonding were explored. Fluxless solder-bump bond quality and reliability were evaluated by measuring the effects of centrifuge, thermal cycling, and high temperature storage on bond visual characteristics, bond electrical continuity, and bond shear tests. The applicability and suitability of this technology for hybrid microelectronic packaging is discussed.

Mandal, R. P.↗

Enabling Large Focal Plane Arrays through Mosaic Hybridization

We have demonstrated the hybridization of large mosaics of far-infrared detectors, joining separately fabricated sub-units into a single unit on a single, large substrate. We produced a single detector mockup on a 100mm diameter wafer and four mockup readout quadrant chips from a separate 100mm wafer. The individually fabricated parts were hybridized using a Suss FC150 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion (CTE) match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the mockup mosaic-hybridized detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently demonstrated.

Miller, Timothy M.↗

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Miller, TImothy M.↗

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Miller, Timothy M.↗

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit patbs by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabric.ted parts were hybridized using a Suss FCI50 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Miller, Timothy M.↗

Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon

Achieving high quantum efficiency in long-wavelength LEDs has posed a significant challenge to the solid-state lighting and display industries. In this article, we use V-defect engineering as a technique to achieve higher efficiencies in red InGaN LEDs on (111) Si through lateral injection. We investigate the effects of superlattice structure on the V-defect distribution, the electroluminescence properties, and the external quantum efficiency. Increasing the relative thickness of In in the InGaN/GaN superlattice and the total superlattice thickness correlate with a reduction of active region defects and increased external quantum efficiencies. The highest measured on-chip EQE was 0.15% and based on Monte-Carlo ray tracing simulations for light extraction we project this would correspond to a flip-chip EQE of ~2.5%.

36 MATERIALS SCIENCE↗