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Results for “Glide resistance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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24 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

In Situ Micro-Pillar Compression to Examine Radiation-Induced Hardening Mechanisms of FeCrAl Alloys

Here, the effects of 5 MeV Fe 2+ ion irradiation at 300°C on the microstructure evolution and deformation behavior of a FeCrAl C26M alloy are presented. It has been found that dislocation loop density increases an order of magnitude from 1 dpa to 16 dpa irradiations, whereas, the dislocation loop size saturates with increasing damage. Micropillars, 600 nm in diameter and 1.3 µm in height, were fabricated and compressed inside grains with <001>, <011> and <111> crystallographic orientations, respectively. {112} <111> has been identified as the primary slip system in both unirradiated and irradiated alloy. The increase in yield stress after irradiation is observed with measurable variation along <001> and <011> vs. along <111>. By applying the Orowan dispersed barrier model, the increase of yield stress is found mainly due to the slip resistance of radiation generated defect loops. Detailed transmission electron microscopy (TEM) studies were performed to quantify the Burgers vector and the distribution of irradiation induced dislocations at elevated strains. It is revealed that localized shear instability is caused by avalanche slip events of ½<111> dislocations gliding out of tested pillars. Simultaneously, a large number of sessile/immobile <100> dislocations formed in the vicinity of slip band, leading to the hardening at elevated strains.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Kink bands promote exceptional fracture resistance in a NbTaTiHf refractory medium-entropy alloy

Single-phase body-centered cubic (bcc) refractory medium- or high-entropy alloys can retain compressive strength at elevated temperatures but suffer from extremely low tensile ductility and fracture toughness. We examined the strength and fracture toughness of a bcc refractory alloy, NbTaTiHf, from 77 to 1473 kelvin. This alloy’s behavior differed from that of comparable systems by having fracture toughness over 253 MPa·m 1/2 , which we attribute to a dynamic competition between screw and edge dislocations in controlling the plasticity at a crack tip. Whereas the glide and intersection of screw and mixed dislocations promotes strain hardening controlling uniform deformation, the coordinated slip of <111> edge dislocations with {110} and {112} glide planes prolongs nonuniform strain through formation of kink bands. These bands suppress strain hardening by reorienting microscale bands of the crystal along directions of higher resolved shear stress and continually nucleate to accommodate localized strain and distribute damage away from a crack tip.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Fatigue damage accumulation in nickel prior to crack initiation

The accumulation of lattice defects during fatigue cycling of nickel was investigated by electrical resistivity measurements, positron annihilation lifetime spectroscopy and transmission electron microscopy. Dislocations and vacancy clusters were found to be the main defect types. During cycling of axial and flexural samples at constant load amplitude, the dislocations form a saturated structure early in the fatigue life. This saturated structure consists of a cellular dislocation matrix, in which persistent slip bands (PSBs) begin to operate after the saturation has been established. Vacancies and vacancy clusters are formed during fatigue as a consequence of repetitive dislocation glide in the PSB structure. When PSBs operate, the matrix is assumed to be dormant, allowing vacancies to accumulate preferentially in the PSBs. The increase in vacancy concentration then accounts for the monotonic accumulation of fatigue damage, which points to the importance of vacancy accumulation as a precursor to crack nucleation.

Grobstein, T. L.↗
NASA NTRS1945

New Method of Determining the Polar Curve of an Airplane in Flight

A fundamental defect of existing methods for the determination of the polar of an airplane in flight is the impossibility of obtaining the thrust or the resistance of the propeller for any type airplane with any type engine. The new method is based on the premise that for zero propeller thrust the mean angle of attack of the blade is approximately the same for all propellers if this angle is reckoned from the aerodynamic chord of the profile section. This angle was determined from flight tests. Knowing the mean angle of the blade setting the angle of attack of the propeller blade at zero thrust can be found and the propeller speed in gliding obtained. The experimental check of the new method carried out on several airplanes gave positive results. The basic assumptions for the construction of the polars and the method of analyzing the flight data are given.

Yegorov, B. N.↗
NASA NTRS1974

Non-equilibrium stagnation region aerodynamic heating of hypersonic glide vehicles

A simple method of predicting aerodynamic heating and corresponding radiation equilibrium surface temperature-time histories for critical locations on space shuttle orbiter-type vehicles is presented. The method is based on a generalization of correlation equations developed earlier by Rosner for predicting the energy transfer and radiation equilibrium temperatures of surfaces with arbitrary catalytic activity and total hemispheric emittance. Recently obtained experimental data for O and N atom recombination probabilities on candidate material surfaces above 1000 K are used to assess nonequilibrium effects for a range of nose radii and a specific space shuttle re-entry trajectory. It is concluded that low catalytic activity will be especially important in locations of large effective nose radii by both increasing oxidation-resistant coating lifetime and reducing energy transfer into the vehicle.

Rosner, D. E.↗
DOE OSTI2023

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

To this day, trapezoidal defects are found in clusters and high counts in wafers representing the industry standard in terms of material quality being produced. This study sheds light on the nature, origin, behavior, and impact of this defect on device yield and reliability. Trapezoidal defects in 4H-SiC epitaxial layers were investigated by photoluminescence (PL) imaging, scanning electron microscopy (SEM), cathodoluminescence spectrum imaging (CLSI), SEM electron beam induced current (EBIC) imaging, and by transmission electron microscopy (TEM) observation. The bar-shaped stacking faults were identified by the PL and CL measurements with a peak emission wavelength of 420 and 450 nm. An optoelectronic behavioral study based on the recombination enhanced dislocation glide mechanism revealed how expanding dislocations and stacking faults interact with each other. Combining the luminescence and microscopy results, the nature of the stacking faults was identified as being a combination of Shockley-type and Frank-type stacking faults. The TEM analysis showed that these defects originate from the substrate and the stacking sequences of some of the faults were determined as (…2, 4, 2…) and (…2, 3, 2…) in the Zhdanov's notation by high-resolution TEM. The origin of this defect is speculated based on our results and previous reports. The EBIC imaging showed that the high density of SFs in these towers is a strong site of carrier recombination, which presumably has an impact on the transfer characteristics of SiC devices. Furthermore, these defects have shown to impact metal oxide semiconductor field effect transistors electrical performance via an increase in the on-state resistance depending on the coverage percentage of the tower of defects in the active area of the device.

4H-SiC↗