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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Plume characteristics of MPD thrusters - A preliminary examination

A diagnostics facility for MPD thruster plume measurements has been built and is currently undergoing testing. The facility includes electrostatic probes for electron temperature and density measurements, Hall probes for magnetic field and current distribution mapping, and an imaging system to establish the global distribution of plasma species. Preliminary results for MPD thrusters operated at power levels between 30 and 60 kW with solenoidal applied magnetic fields show that the electron density decreases exponentially from 1 x 10 to the 20th/cu m to 2 x 10 to the 18th/cu m over the first 30 cm of the expansion, while the electron temperature distribution is relatively uniform, decreasing from approximately 2.5 eV to 1.5 eV over the same distance. The radiant intensity of the ArII 4879 A line emission follows similar patterns. Current distribution measurements indicate that significant fraction of the discharge current is blown into the plume region, and that its distribution depends on the magnitudes of both the discharge current and the applied magnetic field.

Myers, R. M.↗
NASA NTRS1979

Titanium in silicon as a deep level impurity

Titanium inserted in silicon by diffusion or during Czochralski ingot growth is electrically active to a concentration level of about 4 x 10 to the 14th per cu cm. It is reported that Hall measurements after diffusion show conversion of lightly doped p-type Si to n-type due to a Ti donor level at E sub c -0.22 eV. In addition, in DLTS measurements of n(+)p structures this level shows as an electron (minority carrier) trap at E sub c -0.26 eV with an electron capture cross section of about 3 x 10 to the -15th per sq cm at 300 K. Finally, a Ti electrically active concentration of about 1.35 x 10 to the 13th per cu cm in p type Si results in a minority carrier (electron) lifetime of 50 nsec at 300 K.

Chen, J.-W.↗
NASA NTRS1983

Residual double acceptors in bulk GaAs

By using infrared absorption, photoluminescence, and Hall measurements we have observed an additional level associated with a residual acceptor in liquid encapsulated Czochralski GaAs. These results indicate that the defect is a double acceptor with levels 78 and 200 meV above the valence band.

Elliott, K. R.↗
NASA NTRS1984

Segregation of Impurities in Directionally Solidified Silicon

Hall measurements and four-point probe resistivity measurements are used to determine the concentration profile of boron and iron in doped semi-conductor silicon ingots grown by the Bridgman technique. The concentration profiles are fitted to the normal segregation equation and the effective segregation coefficient, K sub eff, is calculated. The average value of K sub eff, is 0.803 for boron. For iron, K sub eff, is concentration dependent and is in the range 0.00008 to 0.00012.

Ravishankar, P. S.↗
NASA NTRS1986

Compensation in epitaxial cubic SiC films

Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on SiC substrates are reported. The temperature dependent carrier concentrations indicate that the samples are highly compensated. Donor ionization energies, E sub D, are less than one half the values previously reported. The values for E sub D and the donor concentration N sub D, combined with results for small bulk platelets with nitrogen donors, suggest the relation E sub D (N sub D) = E sub D(O) - alpha N sub N sup 1/3 for cubic SiC. A curve fit gives alpha is approx 2.6x10/5 meV cm and E sub D (O) approx 48 meV, which is the generally accepted value of E sub D(O) for nitrogen donors in cubic SiC.

Segall, B.↗
NASA NTRS1986

Compensation in epitaxial cubic SiC films

Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on (100) Si substrates are presented, and the temperature-dependent carrier concentrations are analyzed. Samples are found to be highly compensated (greater than 90 percent) contrary to the assumption made in previously published work, and the donor ionization energies, E(D), are shown to be less than one-half the values quoted previously. New E(D) and donor concentration values, however, provide evidence for identifying the donors as nitrogen in cubic SiC.

Segall, B.↗
NASA NTRS1987

Growth and characterization of cubic SiC single-crystal films on Si

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Powell, J. Anthony↗
NASA NTRS1991

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗
NASA NTRS1993

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Xing, G. C.↗
NASA NTRS1993

Growth of ZnTe by Physical Vapor Transport and Traveling Heater Method

ZnTe crystals were grown by horizontal physical vapor transport (PVT) and a Te-solution vertical traveling heater method (THM). The grown crystals were examined by X-ray Laue diffraction technique and Hall measurements to determine the growth orientation and the electrical properties of the crystals. They were also characterized by low temperature infrared (IR) absorption measurements. Several sets of distinct peaks were observed in the IR absorption spectra for the THM samples and were identified as resulting from CU(2+) impurities. Similar measurements on vapor grown ZnTe showed featureless absorption spectra. Chemical analyses were carried out to measure the impurity content in various ZnTe samples and synchrotron radiation topography was used to Study crystalline microstructure of the (111) ZnTe single crystals grown by PVT.

Su, Ching-Hua↗
NASA NTRS2004

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

In the case of unsealed melt growth of an array of II-VI compounds, namely, CdTe, CdZnTe and ZnSe, there is a tremendous amount of experimental data describing the correlations between melt conditions and crystal quality. The results imply that the crystallinity quality can be improved if the melt was markedly superheated or long-time held before growth. It is speculated that after high superheating the associated complex dissociate and the spontaneous nucleation is retarded. In this study, crystals of CdTe were grown from melts which have undergone different thermal history by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWSXT), infrared microscopy, chemical analysis by glow discharge mass spectroscopy (GDMS), electrical conductivity and Hall measurements.

Su, Ching-Hua↗
NASA NTRS2016

Laser Induced Fluorescence Measurements in a Hall Thruster Plume as a Function of Background Pressure

A set of Laser Induced Fluorescence (LIF) measurements in the near-field region of the NASA- 173M Hall thruster plume is presented at four background pressure conditions varying from 9.4 x 10(exp -6) torr to 3.3 x 10(exp -5) torr. The xenon ion velocity distribution function was measured simultaneously along the axial and radial directions. An ultimate exhaust velocity of 19.6+/-0.25 km/s achieved at a distance of 20 mm was measured, and that value was not sensitive to pressure. On the other hand, the ion axial velocity at the thruster exit was strongly influenced by pressure, indicating that the accelerating electric field moved inward with increased pressure. The shift in electric field corresponded to an increase in measured thrust. Pressure had a minor effect on the radial component of ion velocity, mainly affecting ions exiting close to the channel inner wall. At that radial location the radial component of ion velocity was approximately 1000 m/s greater at the lowest pressure than at the highest pressure. A reduction of the inner magnet coil current by 0.6 A resulted in a lower axial ion velocity at the channel exit while the radial component of ion velocity at the channel inner wall location increased by 1300 m/s, and at the channel outer wall location the radial ion velocity remained unaffected. The ultimate exhaust velocity was not significantly affected by the inner magnet current.

Facility Effects↗
NASA NTRS2001

Hall Thruster Plume Measurements On-Board the Russian Express Satellites

The operation of North-South and East-West station-keeping Hall thruster propulsion systems on-board two Russian Express-A geosynchronous communication satellites were investigated through a collaborative effort with the manufacturer of the spacecraft. Over 435 firings of 16 different thrusters with a cumulative run time of over 550 hr were reported with no thruster failures. Momentum transfer due to plume impingement was evaluated based on reductions in the effective thrust of the SPT-100 thrusters and induced disturbance torques determined based on attitude control system data and range data. Hall thruster plasma plume effects on the transmission of C-band and Ku-band communication signals were shown to be negligible. On-orbit ion current density measurements were made and subsequently compared to predictions and ground test data. Ion energy, total pressure, and electric field strength measurements were also measured on-orbit. The effect of Hall thruster operation on solar array performance over several months was investigated. A subset of these data is presented.

Manzella, David↗
NASA NTRS1993

Faster Hall-Effect Current-Measuring Circuit

Current-measuring circuit operates on Hall-effect-sensing and magnetic-field-nulling principles similar to those described in article, "Nulling Hall-Effect Current-Measuring Circuit" (LEW-15023), but simpler and responds faster. Designed without feedback loop, and analog pulse-width-modulated output indicates measured current. Circuit measures current at frequency higher than bandwidth of its Hall-effect sensor.

Sullender, Craig C.↗
NASA NTRS1993

Nulling Hall-Effect Current-Measuring Circuit

Circuit measures electrical current via combination of Hall-effect-sensing and magnetic-field-nulling techniques. Known current generated by feedback circuit adjusted until it causes cancellation or near cancellation of magnetic field produced in toroidal ferrite core by current measured. Remaining magnetic field measured by Hall-effect sensor. Circuit puts out analog signal and digital signal proportional to current measured. Accuracy of measurement does not depend on linearity of sensing components.

Sullender, Craig C.↗
NASA NTRS2008

Preliminary Results of Performance Measurements on a Cylindrical Hall-Effect Thruster with Magnetic Field Generated by Permanent Magnets

The performance of a low-power cylindrical Hall thruster, which more readily lends itself to miniaturization and low-power operation than a conventional (annular) Hall thruster, was measured using a planar plasma probe and a thrust stand. The field in the cylindrical thruster was produced using permanent magnets, promising a power reduction over previous cylindrical thruster iterations that employed electromagnets to generate the required magnetic field topology. Two sets of ring-shaped permanent magnets are used, and two different field configurations can be produced by reorienting the poles of one magnet relative to the other. A plasma probe measuring ion flux in the plume is used to estimate the current utilization for the two magnetic configurations. The measurements indicate that electron transport is impeded much more effectively in one configuration, implying a higher thrust efficiency. Preliminary thruster performance measurements on this configuration were obtained over a power range of 100-250 W. The thrust levels over this power range were 3.5-6.5 mN, with anode efficiencies and specific impulses spanning 14-19% and 875- 1425 s, respectively. The magnetic field in the thruster was lower for the thrust measurements than the plasma probe measurements due to heating and weakening of the permanent magnets, reducing the maximum field strength from 2 kG to roughly 750-800 G. The discharge current levels observed during thrust stand testing were anomalously high compared to those levels measured in previous experiments with this thruster.

Polzin, K. A.↗