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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Diffusion in liquid metal systems

Physical properties of twenty liquid metals are reported; some of the data on such liquid metal properties as density, electrical resistivity, thermal conductivity, and heat capacity are summarized in graphical form. Data on laboratory handling and safety procedure are summarized for each metal; heat-transfer-correlations for liquid metals under various conditions of laminar and turbulent flow are included. Where sufficient data were available, temperature equations of properties were obtained by the method of least-squares fit. All values of properties given are valid in the given liquid phase ranges only. Additional tabular data on some 40 metals are reported in the appendix. Included is a brief description of experiments that were performed to investigate diffusion in liquid indium-gallium systems.

Ukanwa, A. O.↗
NASA NTRS1982

The measurement of heats of solution of high melting metallic systems in an electromagnetic levitation field

A method was tested for measuring the enthalpies of mixing of liquid metallic alloying systems, involving the combination of two samples in the electromagnetic field of an induction coil. The heat of solution is calculated from the pyrometrically measured temperature effect, the heat capacity of the alloy, and the heat content of the added sample. The usefulness of the method was tested experimentally with iron-copper and niobium-silicon systems. This method should be especially applicable to high-melting alloys, for which conventional measurements have failed.

Frohberg, M. G.↗
NASA NTRS1993

Clear evidence for the presence of O VI absorption in QSO metal systems

We have detected O VI 1031.93 A, 1037.62 A doublet absorption in a composite QSO spectrum formed from a large number of intervening C IV absorption systems. The detections constitute the first firm evidence for the presence of O VI in intervening QSO metal absorption systems. The equivalent width of the detected O VI absorption implies an O VI column density N(O VI) not less than 2.8 x 10 exp 14/sq cm. This value, together with the nondetection of the N V 1238.82 A, 1242.80 A doublet absorption, suggests that N(O VI)/N(N V) not less than 4.4. For collisionally ionized gas with a solar O to N abundance ratio in thermal equilibrium the above ratio requires a temperature T not less than 2.5 x 10 exp 5 K. It is found that C IV systems which show low-ionization species and those which do not both have associated O VI absorption, suggesting that O VI is probably present in all C IV systems. We also find that C IV systems which show low-ionization species on average have stronger high-ionization absorption lines than those which do not. A simple interpretation was given to explain this trend.

Lu, Limin↗
NASA NTRS1975

Studies on the Al2O3-Ti-Mo-Au metallization system

The behavior of Ti-Mo-Au metallization on Al2O3 and C has been investigated by backscattering spectrometry. Results show that Mo-Au bimetal films typically mix during deposition. Diffusion of Ti in Mo film occurs at 600 C, but is inhibited by the presence of oxygen in the Ti film. Even 1000 A of Mo is not a barrier against interdiffusion of Ti and Au during 20-min anneals at 600 C. The amount of mixing observed also depends on the nature of the substrate which supports the Ti-Mo-Au metallization.

Harris, J. M.↗
NASA NTRS1984

Amorphous metallic films in silicon metallization systems

The general objective was to determine the potential of amorphous metallic thin films as a means of improving the stability of metallic contacts to a silicon substrate. The specific objective pursued was to determine the role of nitrogen in the formation and the resulting properties of amorphous thin-film diffusion barriers. Amorphous metallic films are attractive as diffusion barriers because of the low atomic diffusivity in these materials. Previous investigations revealed that in meeting this condition alone, good diffusion barriers are not necessarily obtained, because amorphous films can react with an adjacent medium (e.g., Si, Al) before they recrystallize. In the case of a silicon single-crystalline substrate, correlation exists between the temperature at which an amorphous metallic binary thin film reacts and the temperatures at which the films made of the same two metallic elements react individually. Amorphous binary films made of Zr and W were investigated. Both react with Si individually only at elevated temperatures. It was confirmed that such films react with Si only above 700 C when annealed in vacuum for 30 min. Amorphous W-N films were also investigated. They are more stable as barriers between Al and Si than polycrystalline W. Nitrogen effectively prevents the W-Al reaction that sets in at 500 C with polycrystalline W.

Nicolet, M. A.↗
NASA NTRS1976

Effect of adsorbed films on friction of Al2O3-metal systems

The kinetic friction of polycrystalline Al2O3 sliding on Cu, Ni, and Fe in ultrahigh vacuum was studied as a function of the surface chemistry of the metal. Clean metal surfaces were exposed to O2, Cl2, C2H4, and C2H3Cl, and the change in friction due to the adsorbed species was observed. Auger electron spectroscopy assessed the elemental composition of the metal surface. It was found that the systems exposed to Cl2 exhibited low friction, interpreted as the van der Waals force between the Al2O3 and metal chloride. The generation of metal oxide by oxygen exposures resulted in an increase in friction, interpreted as due to strong interfacial bonds established by reaction of metal oxide with Al2O3 to form the complex oxide (spinel). The only effect of C2H4 was to increase the friction of the Fe system, but C2H3Cl exposures decreases friction in both Ni and Fe systems, indicating the dominance of the chlorine over the ethylene complex on the surface

Pepper, S. V.↗
NASA NTRS1981

Development of an all-metal thick film cost effective metallization system for solar cells

The objectives of the investigation were to provide all-metal screenable pastes using economical base metals, suitable for application to low-to-high conductivity silicon of either conductivity type and possibly to aluminum surfaces. Experiments were conducted with variations in paste parameters, firing conditions, including gas ambients, furnace furniture, silicon surface and others. A liquid medium, intended to provide transport during the carbon fluoride decomposition was incorporated in the paste with promising results.

Ross, B.↗
NASA NTRS1981

Molybdenum-tin as a solar cell metallization system

The operations of solar cell manufacture are briefly examined. The formation of reliable, ohmic, low-loss, and low-cost metal contacts on solar cells is a critical process step in cell manufacturing. In a commonly used process, low-cost metallization is achieved by screen printing a metal powder-glass frit ink on the surface of the Si surface and the conductive metal powder. A technique utilizing a molybdenum-tin alloy for the metal contacts appears to lower the cost of materials and to reduce process complexity. The ink used in this system is formulated from MoO3 with Sn powder and a trace amount of titanium resonate. Resistive losses of the resulting contacts are low because the ink contains no frit. The MoO3 is finally melted and reduced in forming gas (N2+H2) to Mo metal. The resulting Mo is highly reactive which facilitates the Mo-Si bonding.

Boyd, D. W.↗
NASA NTRS1985

Theoretical Studies of the Surface Tension of Liquid Metal System

A major goal of this project is to understand the surface tension and other thermophysical properties of liquid metals and alloys from a fundamental viewpoint. The approach is to calculate these quantities by a first principles technique which combines the statistical-mechanical theory of the liquid state with an electronic pseudopotential theory of electrons in metals. The inhomogeneity of the surface is treated using an ionic-density-functional formalism developed with the support of NASA. Of particular interest are the variation of surface tension with temperature and impurity concentration: such variations strongly influence the types of convection which make take place in a low-gravity environment. Some progress has already been achieved in computing the reduction of surface tension due to the presence of low-surface-tension impurities, and the corresponding surface segregation of such impurities. In the coming year, it is planned to concentrate on the surface properties of materials of particular interest to the MSA program: Si, Ga and GaSn alloys. An additional goal is to gain some theoretical understanding of the high temperature thermophysical properties of liquid metals, particularly high melting point materials which have not been studied extensively from a theoretical viewpoint.

Stroud, D. G.↗
NASA NTRS2008

Joining and Integration of Advanced Carbon-Carbon Composites to Metallic Systems for Thermal Management Applications

Recent research and development activities in joining and integration of carbon-carbon (C/C) composites to metals such as Ti and Cu-clad-Mo for thermal management applications are presented with focus on advanced brazing techniques. A wide variety of carbon-carbon composites with CVI and resin-derived matrices were joined to Ti and Cu-clad Mo using a number of active braze alloys. The brazed joints revealed good interfacial bonding, preferential precipitation of active elements (e.g., Ti) at the composite/braze interface. Extensive braze penetration of the inter-fiber channels in the CVI C/C composites was observed. The chemical and thermomechanical compatibility between C/C and metals at elevated temperatures is assessed. The role of residual stresses and thermal conduction in brazed C/C joints is discussed. Theoretical predictions of the effective thermal resistance suggest that composite-to-metal brazed joints may be promising for lightweight thermal management applications.

Singh, M.↗
NASA NTRS1983

Development of an all-metal thick film cost effective metallization system for solar cells

Improved thick film solar cell contacts for the high volume production of low cost silicon solar arrays are needed. All metal screenable pastes made from economical base metals and suitable for application to low to high conductivity silicon were examined. Silver fluoride containing copper pastes and fluorocarbon containing copper pastes were discussed. The effect of hydrogen on the adhesion of metals to silicon was investigated. A cost analysis of various paste materials is provided.

Ross, B.↗
NASA NTRS1981

Development of an all-metal thick film cost affective metallization system for solar cells

An economical thick film solar cell contact for high volume production of low cost silicon solar array modules was investigated. All metal screenable pastes using base metals were studied. Solar cells with junction depths varying by a factor of 3.3, with and without a deposited oxide coating were used. Cells were screened and fired by a two step firing process. Adhesion and metallurgical results are unsatisfactory. No electrical information is obtained due to inadequate contact adhesion.

Ross, B.↗
NASA NTRS1985

Amorphous metallic films in silicon metallization systems

Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.

So, F.↗
NASA NTRS1982

An accelerated stress testing program for determining the reliability sensitivity of silicon solar cells to encapsulation and metallization systems

The use of accelerated testing methods in a program to determine the reliability attributes of terrestrial silicon solar cells is discussed. Different failure modes are to be expected when cells with and without encapsulation are subjected to accelerated testing and separate test schedules for each are described. Unencapsulated test cells having slight variations in metallization are used to illustrate how accelerated testing can highlight different diffusion related failure mechanisms. The usefulness of accelerated testing when applied to encapsulated cells is illustrated by results showing that moisture related degradation may be many times worse with some forms of encapsulation than with no encapsulation at all.

Lathrop, J. W.↗