Mid-IR distributed feedback interband cascade lasers and their application for detection of CH4
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semiconductor superlattices↗
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Low threshold interband cascade lasers operating above room temperature
Mid-IR type-II interband cascade lasers were demonstrated in pulsed mode at temperatures up to 325 K and in continuous mode up to 200 K. At 80 K, the threshold current density was 8.9 A/cm2 and a cw outpout power of ~140 mW/facet was obtained.
interband cascade lasers GaSb molecular beam epita↗
Frequency conversion system
Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.
Sanders, Steven↗
Mid-infrared solid-state lasers and laser materials
An account is given of NASA-Langley's objectives for the development of advanced lasers and laser materials systems applicable to remote sensing in the mid-IR range. Prominent among current concerns are fiber-optic spectroscopy, eye-safe solid-state lasers for both Doppler sensing and mid-IR wavelength-generation laser pumping, and nonlinear optics generating tunable mid-IR radiation. Ho:YAG lasers are noted to exhibit intrinsic advantages for the desired applications, and are pumpable by GaAlAs laser diodes with a quantum efficiency approaching 2.
Barnes, Norman P.↗
Near-IR diode laser absorption for measurement of tropospheric HO2
The possibility of using tunable lead salt diode lasers in the infrared for measurement of tropospheric HO2 has been frequently considered. Although the sensitivity of diode laser absorption has been improved through the use of high frequency detection techniques, nature has been unkind in that the HO2 absorption cross sections are weak. Even using the most optimistic assumptions about attainable path length and detectable absorbance, measurement of tropospheric HO2 by diode laser absorption in the mid-IR appears marginal. A possible alternative method for measuring HO2 is by absorption at near-infrared wavelengths. Several absorption bands of HO2 occur in the wavelength region between 1.2 and 1.6 micron due to electronic transitions and overtones of the fundamental vibrational modes. InGaAsP diode lasers operate in this wavelength region and can be used for high resolution spectroscopy in a manner analogous to the lead salt lasers. A diode laser system in the near-IR offers some advantages.
Stanton, Alan C.↗
Integration and compaction of optical systems in the mid-infrared
Problems in the design of optical systems for use with mid-IR (MIR; 10.6-micron) lasers are reviewed. The cryogenically operated lead-chalcogenide tunable diode lasers currently used as sources emit complex far-field patterns and require sophisticated beam collection, shaping, and guide optics. Since conventional optics using large mirrors and Ge lenses are often awkward to use and sensitive to vibration, and since optical fibers for the MIR have not been perfected, current research concentrates on hollow flexible rectangular metallic pipes. These pipes are shown to provide transmission of 95 percent or better over a 1-m length, with beam shaping and polarization control. The low transmission losses and wideband IR transmission of single-crystal alkali halides suggest the feasibility of their use in MIR optical fibers and waveguides.
Yu, C.↗
Diode laser absorption sensors for gas-dynamic and combustion flows
Recent advances in room-temperature, near-IR and visible diode laser sources for tele-communication, high-speed computer networks, and optical data storage applications are enabling a new generation of gas-dynamic and combustion-flow sensors based on laser absorption spectroscopy. In addition to conventional species concentration and density measurements, spectroscopic techniques for temperature, velocity, pressure and mass flux have been demonstrated in laboratory, industrial and technical flows. Combined with fibreoptic distribution networks and ultrasensitive detection strategies, compact and portable sensors are now appearing for a variety of applications. In many cases, the superior spectroscopic quality of the new laser sources compared with earlier cryogenic, mid-IR devices is allowing increased sensitivity of trace species measurements, high-precision spectroscopy of major gas constituents, and stable, autonomous measurement systems. The purpose of this article is to review recent progress in this field and suggest likely directions for future research and development. The various laser-source technologies are briefly reviewed as they relate to sensor applications. Basic theory for laser absorption measurements of gas-dynamic properties is reviewed and special detection strategies for the weak near-IR and visible absorption spectra are described. Typical sensor configurations are described and compared for various application scenarios, ranging from laboratory research to automated field and airborne packages. Recent applications of gas-dynamic sensors for air flows and fluxes of trace atmospheric species are presented. Applications of gas-dynamic and combustion sensors to research and development of high-speed flows aeropropulsion engines, and combustion emissions monitoring are presented in detail, along with emerging flow control systems based on these new sensors. Finally, technology in nonlinear frequency conversion, UV laser materials, room-temperature mid-IR materials and broadly tunable multisection devices is reviewed to suggest new sensor possibilities.
Non-NASA Center↗
Application of Tunable Diode Laser Spectrometry for Isotopic Analysis
Lead-salt tunable diode lasers are now commercially available with operating temperatures above 77 K and excellent single-mode characteristics which make them very useful for spectroscopy in the mid-IR spectral range. Using these lasers for absorption measurements in the 4.3 micrometer spectral region we have made accurate measurements of isotopic abundances in CO2. The method involves assembly language controlled data acquisition of spectra of selected adjacent isotopic rotational lines, an etalon spectral frequency calibration technique, the fitting of multiple Voigt profiles to the data, and the ratioing of absorbances from simultaneously acquired sample and reference data scans. The accuracy achieved is better than 0.4% for the C-13/C-12 ratio and 1% for the O-18/O-16 ratio. Higher accuracy is expected from improvements now being implemented.
Sauke, T. B.↗
Interchange for Joint Research Entitled: Miniature Laser Spectrometer for Stable Isotope Measurements
As a first step in successfully measuring carbon isotopes optically we have previously demonstrated the measurement of C-13/C-12 to a precision of 0.1% using a tunable diode laser and CO2 spectral lines in the 2300/cm spectral region. This precision of 0.1% (1 per mil) for carbon isotopes is a value sufficiently precise to provide important isotopic data of interest to astrobiologists. The precision presently attainable in gases is sufficient to permit our instrument to be used in the measurement of isotopic ratios of interest to astrobiologists as well as geologists and planetary scientists. A small stable isotope laser spectrometer with a 10 cm path gas cell was designed and constructed. The cell was integrated with a liquid nitrogen cooled tunable diode laser and indium antimonide detector for evaluation. Using the small gas cell, preliminary measurements of 13C/12C in CO2 were made employing single-beam sequential acquisitions of the required spectral data. The results indicate an accuracy of 0.1% which is sufficiently high to make meaningful measurements of martian samples. In addition, improvements in the spectrometer gas handling system have been made to markedly reduce C-13/C-12 isotopic fractionation during sample gas cell loading which we expect will lead to further improvements in precision and accuracy. An important part of making isotopic ratio measurements in solid samples using diode lasers is the conversion of the elements of interest to molecules that have absorption spectra in the mid-ir spectral range accessible by tunable diode lasers. In this project we have investigated the necessary sample preparation procedures to extract carbon, an element of astrobiological importance, from model soil compounds and to convert it to CO2, a molecule with appropriate optical absorption characteristics for reliable laser spectrometer isotopic ratio measurements of 13C/12C. We have considered calcium carbonate as a model for a component of the martian regolith, and we have formulated a simple heating protocol for extracting carbon in the form of CO2.
Becker, J. F.↗
Tunable solid-state lasers - An emerging technology for remote sensing of planetary atmospheres
The present development status and prospective (1990s) performance-improvement evaluation of tunable solid-state laser technology notes recent trends toward spectrum coverage over the 0.20-14.0 microns range, in addition to dramatic increases in efficiency, service life, and reliability. It is judged that the Ti:Al2O3 laser and the AgGaSe2 optical parametric oscillator pumped by a Ho:YAG laser could cover the near-IR and mid-IR regions of the spectrum. Laser diodes operating at 0.78 microns should provide an excellent pump for a Ho:YAG laser.
Barnes, Norman P.↗
Tunable diode laser IR spectrometer for in situ measurements of the gas phase composition and particle size distribution of Titan's atmosphere
A new instrument, the Probe Infrared Laser Spectrometer (PIRLS), is described for in situ sensing of the gas composition and particle size distribution of Titan's atmosphere on the NASA/ESA Cassini mission. For gas composition measurements, several narrow-band (0.0001/cm) tunable lead-salt diode lasers operating near 80 K at selected mid-IR wavelengths are directed over a path length defined by a small reflector extending over the edge of the probe spacecraft platform; volume mixing ratios of 10 to the -9th should be measurable for several species of interest. A cloud-particle-size spectrometer using a diode laser source at 780 nm shares the optical path and deployed reflector; a combination of imaging and light scattering techniques is used to determine sizes of haze and cloud particles and their number density as a function of altitude.
Webster, Christopher R.↗
Development of an automated diode-laser-based multicomponent gas sensor
The implementation and application of a portable fiber-coupled trace-gas sensor for the detection of several trace gases, including CO2, CH4, and H2CO, are reported. This particular sensor is based on a cw fiber-amplified near-infrared (distributed Bragg reflector) diode laser and an external cavity diode laser that are frequency converted in a periodically poled lithium niobate crystal to the mid-IR spectroscopic fingerprint region (3.3-4.4 micrometers). A continuous absorption spectrum of CH4 and H2CO from 3.37 to 3.10 micrometers with a spectral resolution of 40 MHz (approximately 0.0013 cm-1) demonstrated the spectral performance that can be achieved by means of automated wavelength tuning and phase matching with stepper motor control. Autonomous long-term detection of ambient CO2 and CH4 over a 3- and 7-day period was also demonstrated.
NASA Discipline Environmental Health↗
Mid Infrared Hydrogen Recombination Line Emission from the Maser Star MWC 349A
We have detected and spectrally resolved the mid-IR hydrogen recombination lines H6(alpha)(12.372 micrometers), H7(alpha)(19.062 micrometers), H7(beta)(l1.309 micrometers) and H8(gamma)(12.385 micrometers) from the star MWC349A. This object has strong hydrogen maser emission (reported in the millimeter and submillimeter hydrogen recombination lines from H36(alpha) to H21(alpha)) and laser emission (reported in the H15(alpha), H12(alpha) and H10(alpha) lines). The lasers/masers are thought to arise predominantly in a Keplerian disk around the star. The mid-IR lines do not show evident signs of lasing, and can be well modeled as arising from the strong stellar wind, with a component arising from a quasi-static atmosphere around the disk, similar to what is hypothesized for the near IR (less than or equal to 4 micrometers) recombination lines. Since populations inversions in the levels producing these mid-IR transitions are expected at densities up to approximately 10(exp 11)/cu cm, these results imply either that the disk does not contain high-density ionized gas over long enough path lengths to produce a gain approximately 1, and/or that any laser emission from such regions is small compared to the spontaneous background emission from the rest of the source as observed with a large beam. The results reinforce the interpretation of the far-IR lines as true lasers.
Smith, Howard A.↗
Methods for forming group III-V arsenide-nitride semiconductor materials
Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Major, Jo S.↗
III-V arsenide-nitride semiconductor
III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Major, Jo S.↗
Methods for forming group III-arsenide-nitride semiconductor materials
Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Major, Jo S.↗
III-V aresenide-nitride semiconductor materials and devices
III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Major, Jo S.↗
Stable isotope laser spectroscopy
Recent advances in semiconductor laser technology have produced a reliable lightweight device ideally suited for a spacecraft high resolution molecular spectrometer. Lead-salt tunable diode lasers (TDL) emit in several spectral modes, each with a very narrow linewidth of -0.0003/cm. This spectral resolution is much narrower than typical Doppler broadened molecular linewidths in the mid-IR range. Thus it is possible to detect individual rotational lines within the vibrational band and measure their intensity, which can be used to determine gas concentration. The narrow spectral lines of any impurity gas tend to lie between the narrow lines of the gas of interest. This represents a major advantage over the accepted gas chromatograph mass spectrometer (GCMS) technique for measuring gas concentrations and isotope ratios. The careful and extensive gas purification procedures required to remove impurities for reliable GCMS measurements will not be required for an IR laser gas analysis. The infrared laser gas analysis technique is being developed to measure stable isotopic ratios of gases such as CO2, CH4, N2O, and NH3. This will eventually lead to development of instruments capable of in situ istopic measurements on planets such as Mars. The carbon (C-12, C-13) isotope ratio is indicative of the type of carbon fixation mechanisms (e.g., photosynthesis, respiration) in operation on a planet, while the nitrogen (N-14, N-15) isotope ratio can probably be used to date nitrogen-bearing Martian samples. The absorbance ratio of two adjacent lines of CO2 in the 2300/cm (4.3 micron) region of the spectrum was measured. The precision of the measurement is presently better than 1 percent and significant improvement is anticipated as rapid sweep-integration techniques and computer controlled data acquistion capabilities are incorporated.
Becker, J. F.↗