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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

AlGaN/GaN↗
NASA NTRS1984

Deep diode arrays for X-ray detection

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Zemel, J. N.↗
NASA NTRS2008

Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

Phillips, Thomas A.↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗
NASA NTRS1970

Low-power integrated-circuit driver for ferrite-memory word lines

Composite circuit uses both n-p-n bipolar and p-channel MOS transistors /BIMOS/. The BIMOS driver provides 1/ ease of integrated circuit construction, 2/ low standby power consumption, 3/ bidirectional current pulses, and 4/ current-pulse amplitudes and rise times independent of active device parameters.

Katz, S.↗
NASA NTRS1983

The damage equivalence of electrons, protons, alphas and gamma rays in rad-hard MOS devices

This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.

Stassinopoulos, E. G.↗
NASA NTRS1999

The Circumstellar Environment of Low Mass Star Forming Regions

The final technical report of the NASA grant project is presented. The goals of the grant were to: (1) analyze the data from the Far-Infrared (FIR) Camera on board the Kuiper Airborne Observatory (KAO); (2) acquire additional data at other wavelengths for models and (4) to develop source models for the Young stellar objects (YSOs)under study. The complete Spectral Energy Distribution (SED) from 10 microns out to 1.3 mm for all sources being studied have been obtained. The FIR imaging data was processed to reveal the maximum angular resolution possible, which allows us to model the disk. To model the disk we have the high resolution millimeter interferometry data. In summary the results to date are: (1) the vast majority of embedded YSOs in Taurus are compact at 100 microns. The models mos consistent with our data and other observations are either dominated by disk emissions, or envelopes that have relatively steep density gradients; (2) the submillimeter/millimeter photometer suggests that models are very successful. Disk emission plays an important role and must be considered when predicting the overall emission. (3) in the two cases, where we seem to have extended emission, we have to investigate other possible source models than a Shu collapse.

Butner, Harold M.↗
NASA NTRS1974

Basic memory module

Construction and electrical characterization of the 4096 x 2-bit Basic Memory Module (BMM) are reported for the Space Ultrareliable Modular Computer (SUMC) program. The module uses four 2K x 1-bit N-channel FET, random access memory chips, called array chips, and two sense amplifier chips, mounted and interconnected on a ceramic substrate. Four 5% tolerance power supplies are required. At the Module, the address, chip select, and array select lines require a 0-8.5 V MOS signal level. The data output, read-strobe, and write-enable lines operate at TTl levels. Although the module is organized as 4096 x 2 bits, it can be used in a 8196 x 1-bit application with appropriate external connections. A 4096 x 1-bit organization can be obtained by depopulating chips.

Tietze, F. C.↗
NASA NTRS1982

Electron lithography STAR design guidelines. Part 2: The design of a STAR for space applications

The STAR design system developed by NASA enables any user with a logic diagram to design a semicustom digital MOS integrated circuit. The system is comprised of a library of standard logic cells and computr programs to place, route, and display designs implemented with cells from the library. Also described is the development of a radiation-hard array designed for the STAR system. The design is based on the CMOS silicon gate technology developed by SANDIA National Laboratories. The design rules used are given as well as the model parameters developed for the basic array element. Library cells of the CMOS metal gate and CMOS silicon gate technologies were simulated using SPICE, and the results are shown and compared.

Trotter, J. D.↗
NASA NTRS1985

Physics and design of advanced IR bolometers and photoconductors

The state-of-the-art in photoconductors and bolometers is reviewed, centering on the materials development and concepts of extrinsic Si and Ge devices. It is suggested that in the field of 2-D detector arrays the hybrid circuits containing a photoconductor or a photodiode array, bonded with In solder to a switched MOS readout device with up to 60 x 60 elements, will produce superior performance. Other systems discussed include charge-coupled devices, developed for visible-light imaging and adapted to IR imaging, and charge-injection devices, a monolithic combination of a standard photoconductor and a metal-insulator-semiconductor capacitor. Finally, it is pointed out that a nonequilibrium theory of bolometer noise demonstrates the possibility of reducing the traditionally accepted noise limits by 60 percent for Johnson noise and 30 percent for the noise from phonons in the thermal link of the bolometer.

Haller, E. E.↗
NASA NTRS2014

A Multifaceted Approach to Modernizing NASA's Advanced Multi-Mission Operations System (AMMOS) System Architecture

The Advanced Multi-Mission Operations Systems (AMMOS) is NASA's premier space mission operations product line offering for use in deep-space robotic and astrophysics missions. The general approach to AMMOS modernization over the course of its 29-year history exemplifies a continual, evolutionary approach with periods of sponsor investment peaks and valleys in between. Today, the Multimission Ground Systems and Services (MGSS) office-the program office that manages the AMMOS for NASA-actively pursues modernization initiatives and continues to evolve the AMMOS by incorporating enhanced capabilities and newer technologies into its end-user tool and service offerings. Despite the myriad of modernization investments that have been made over the evolutionary course of the AMMOS, pain points remain. These pain points, based on interviews with numerous flight project mission operations personnel, can be classified principally into two major categories: 1) information-related issues, and 2) process-related issues. By information-related issues, we mean pain points associated with the management and flow of MOS data across the various system interfaces. By process-related issues, we mean pain points associated with the MOS activities performed by mission operators (i.e., humans) and supporting software infrastructure used in support of those activities. In this paper, three foundational concepts-Timeline, Closed Loop Control, and Separation of Concerns-collectively form the basis for expressing a set of core architectural tenets that provides a multifaceted approach to AMMOS system architecture modernization intended to address the information- and process-related issues. Each of these architectural tenets will be further explored in this paper. Ultimately, we envision the application of these core tenets resulting in a unified vision of a future-state architecture for the AMMOS-one that is intended to result in a highly adaptable, highly efficient, and highly cost-effective set of multimission MOS products and services.

Estefan, Jeff A.↗
NASA NTRS2003

X-ray QPOs from the Ultra-luminous X-ray Source in M82: Evidence Against Beaming

We report the discovery with the European Photon Imaging Camera (EPIC) CCD cameras onboard XMM-Newton of a 54 mHz quasiperiodic oscillation (QPO) in the greater than 2 keV X-ray flux from the ultra-luminous X-ray source (ULX) X41.4+60 in the starburst galaxy M82. This is the first detection of a QPO in the X-ray flux from an extra-Galactic ULX, and confirms that the source is a compact object. The QPO is detected in the combined PN and MOS data at the approx. 6sigma level, and separately at lower significances in both the PN and MOS instruments. It had a centroid frequency of 54.3 +/- 0.9 mHz, a coherence Q is identical with nu(sub 0)/Delta nu(sub fwhm) is approx. 5, and an amplitude (rms) in the 2 - 10 keV band of 8.5%. Below about 0.2 Hz the power spectrum can be described by a power-law with index approx. 1, and integrated amplitude (rms) of 13.5%. The X-ray spectrum requires a curving continuum, with a disk-blackbody (diskbb) at T = 3.1 keV providing an acceptable, but not unique, fit. A broad Fe line centered at 6.55 keV is required in all fits, but the equivalent width (EW) of the line is sensitive to the choice of continuum model. There is no evidence of a reflection component. The implied bolometric luminosity is approx. 4 - 5 x 10(exp 40) ergs/s. Data from several archival Rossi X-ray Timing Explorer (RXTE) pointings at M82 also show evidence for QPOs in the 50 - 100 mHz frequency range. Several Galactic black hole candidates (BHCs), including GRS 1915+105, GRO J1655-40, and XTE 1550-564, show QPOs in the same frequency range as the 50 - 100 mHz QPOs in X41.4+60, which at first glance suggests a possible connection with such objects. However, strong, narrow QPOs provide solid evidence for disk emission, and thus present enormous theoretical difficulties for models which rely on either geometrically or relativistically beamed emission to account for the high X-ray luminosities. We discuss the implications of our findings for models of the ULX sources.

Strohmayer, Tod E.↗
NASA NTRS1987

A 9 month long soft X-ray survey of the Large Magellanic Cloud. I - X-ray map at 1/4 keV

Data from the HEAO 1 low energy detector was used to map the diffuse 1/4 keV X-ray background around the LMC. Data was collected over 9 mos in 1977-1978 using detectors sensitive in the range 0.18-2.8 keV. Diffuse emission, rather than absorption, was observed from the LMC, as were two large emission (2 million K) regions with very low surface brightness. The regions coincided with the Shapley III supergiant shell of optical nebulosity and the LMC bar. Higher spatial resolution imagery is required if the emission features are to be confirmed as the same type of phenomena as the X-ray superbubble in Cygnus.

Singh, K. P.↗
NASA NTRS1979

Studies of silicon p-n junction solar cells

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

Neugroschel, A.↗
NASA NTRS1991

Long-term prediction test procedure for most ICs, based on linear response theory

Experimentally, thermal annealing is known to be a factor which enables a number of different integrated circuits (IC's) to recover their operating characteristics after suffering radiation damage in the space radiation environment; thus, decreasing and limiting long term cumulative total-dose effects. This annealing is also known to be accelerated at elevated temperatures both during and after irradiation. Linear response theory (LRT) was applied, and a linear response function (LRF) to predict the radiation/annealing response of sensitive parameters of IC's for long term (several months or years) exposure to the space radiation environment were constructed. Compressing the annealing process from several years in orbit to just a few hours or days in the laboratory is achieved by subjecting the IC to elevated temperatures or by increasing the typical spaceflight dose rate by several orders of magnitude for simultaneous radiation/annealing only. The accomplishments are as follows: (1) the test procedure to make predictions of the radiation response was developed; (2) the calculation of the shift in the threshold potential due to the charge distribution in the oxide was written; (3) electron tunneling processes from the bulk Si to the oxide region in an MOS IC were estimated; (4) in order to connect the experimental annealing data to the theoretical model, constants of the model of the basic annealing process were established; (5) experimental data obtained at elevated temperatures were analyzed; (6) time compression and reliability of predictions for the long term region were shown; (7) a method to compress test time and to make predictions of response for the nonlinear region was proposed; and (8) nonlinearity of the LRF with respect to log(t) was calculated theoretically from a model.

Litovchenko, V.↗
NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗
NASA NTRS1976

High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs.

Bouldin, D. L.↗
NASA NTRS2016

Searching for Decaying Dark Matter in Deep XMM-Newton Observation of the Draco Dwarf Spheroidal

We present results of a search for the 3.5 keV emission line in our recent very long (approx. 1.4 Ms) XMM-Newton observation of the Draco dwarf spheroidal galaxy. The astrophysical X-ray emission from such dark matter-dominated galaxies is faint, thus they provide a test for the dark matter origin of the 3.5 keV line previously detected in other massive, but X-ray bright objects, such as galaxies and galaxy clusters. We do not detect a statistically significant emission line from Draco; this constrains the lifetime of a decaying dark matter particle to tau >(7-9) × 10(exp 27) s at 95% CL (combining all three XMM-Newton cameras; the interval corresponds to the uncertainty of the dark matter column density in the direction of Draco). The PN camera, which has the highest sensitivity of the three, does show a positive spectral residual (above the carefully modeled continuum) at E = 3.54 +/- 0.06 keV with a 2.3(sigma) significance. The two MOS cameras show less-significant or no positive deviations, consistently within 1(sigma) with PN. Our Draco limit on tau is consistent with previous detections in the stacked galaxy clusters, M31 and the Galactic Centre within their 1 − 2(sigma) uncertainties, but is inconsistent with the high signal from the core of the Perseus cluster (which has itself been inconsistent with the rest of the detections). We conclude that this Draco observation does not exclude the dark matter interpretation of the 3.5 keV line in those objects.

dark matter↗