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Results for “On-wafer measurements”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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28 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

High-Temperature RF Probe Station For Device Characterization Through 500 deg C and 50 GHz

A high-temperature measurement system capable of performing on-wafer microwave testing of semiconductor devices has been developed. This high temperature probe station can characterize active and passive devices and circuits at temperatures ranging from room temperature to above 500 C. The heating system uses a ceramic heater mounted on an insulating block of NASA shuttle tile material. The temperature is adjusted by a graphical computer interface and is controlled by the software-based feedback loop. The system is used with a Hewlett-Packard 8510C Network Analyzer to measure scattering parameters over a frequency range of 1 to 50 GHz. The microwave probes, cables, and inspection microscope are all shielded to protect from heat damage. The high temperature probe station has been successfully used to characterize gold transmission lines on silicon carbide at temperatures up to 540 C.

Schwartz, Zachary D.↗
NASA NTRS1994

Cryogenic probe station for use in automated microwave and noise figure measurements

A cryogenic measurement system capable of performing on-wafer RF testing of semiconductor devices and circuits has been developed. This 'CryoProbe Station' can wafer-probe devices and circuits at cryogenic temperatures, thus eliminating the need for wire bonds. The system operates under vacuum created by a sorption pump. It uses an open cycle cooling system that can be cooled with either liquid nitrogen or liquid helium. Presently, it can reach temperatures, as low as 80 K and 37 K for each of the coolants, respectively. The temperature can be raised using a heater and it is stabilized to within 0.2 K by use of a temperature controller. The CryoProbe Station features a 1 by 2 inch stage that can hold large circuits and calibration standards simultaneously. The system is used with a Hewlett Packard 8510C Automatic Network Analyzer (ANA) to obtain S-parameter data over the frequency range 0.045-26.5 GHz. S-parameter data on HEMT (high electron mobility transistors) devices has been obtained with this station. With the use of DEEMBED software from NIST, detailed transmission line studies have been performed. Although the CryoProbe Station is designed for frequencies up to 26.5 GHz, useful transmission line data has been obtained for frequencies as high as 40 GHz. The CryoProbe station has also been used with the ATN noise figure measurement system to perform automatic, temperature dependent noise figure measurements.

Taub, Susan R.↗
NASA NTRS1992

Temperature independent quantum well FET with delta channel doping

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.

Young, P. G.↗
NASA NTRS2014

Challenges and Techniques in Measurements of Noise, Cryogenic Noise and Power in Millimeter-Wave and Submillimeter-Wave Amplifiers

We will present the topic of noise measurements, including cryogenic noise measurements, of Monolithic Microwave Integrated Circuit (MMIC) and Sub-Millimeter-Wave Monolithic Microwave Integrated Circuit (S-MMIC) amplifiers, both on-wafer, and interfaced to waveguide modules via coupling probes. We will also present an overview of the state-of-the-art in waveguide probe techniques for packaging amplifier chips, and discuss methods to obtain the lowest loss packaging techniques available to date. Linearity in noise measurements will be discussed, and experimental methods for room temperature and cryogenic noise measurements will be presented. We will also present a discussion of power amplifier measurements for millimeter-wave and submillimeter-wave amplifiers, and the tools and hardware needed for this characterization.

Samoska, Lorene↗
NASA NTRS1998

On-Wafer Characterization of Millimeter-Wave Antennas for Wireless Applications

The paper demonstrates a de-embedding technique and a direct on-substrate measurement technique for fast and inexpensive characterization of miniature antennas for wireless applications at millimeter-wave frequencies. The technique is demonstrated by measurements on a tapered slot antenna (TSA). The measured results at Ka-Band frequencies include input impedance, mutual coupling between two TSAs and absolute gain of TSA.

Simons, Rainee N.↗
NASA NTRS1993

RF Properties of Epitaxial Lift-Off HEMT Devices

Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

Young, Paul G.↗
NASA NTRS2008

HEMT Amplifiers and Equipment for their On-Wafer Testing

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

Fung, King man↗
NASA NTRS1995

On-wafer, cryogenic characterization of ultra-low noise HEMT devices

Significant advances in the development of high electron-mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting insulator superconducting front ends in the 1- to 100-GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's are accurate and repeatable device measurements at cryogenic temperatures. This article describes the design and operation of a cryogenic coplanar waveguide probe system for the characterization and modeling of advanced semiconductor transistors at cryogenic temperatures. Results on advanced HEMT devices are presented to illustrate the utility of the measurement system.

Bautista, J. J.↗
NASA NTRS2017

Sub-20-K Noise Temperature LNA for 67-90 GHz Frequency Band

Indium Phosphide MMIC LNAs are enabling new capabilities in instrument development. The development of arrays of hundreds of cryogenically-cooled millimeter wave receivers has previously been challenging, but is now achievable with highly repeatable MMIC processes and advances in cryogenic on-wafer testing of LNAs. We have developed InP HEMT LNA MMICs for the 67-90 GHz frequency band that is the last missing receiver system from the ALMA. These MMICs provided average performance of less than 22.5 K noise temperature over the frequency band and minimum noise temperature of 17.5 K at 72 GHz. These LNAs achieve NT=220K (NF=2.4dB) at 90 GHz for Earth remote sensing instrument on Sentinel-6. Our HRMR (High Resolution Microwave Radiometer) achieves NEDT < 0.05K enabling Sentinel-6 to measure coastal ocean topography at 3 km resolution with better than 1 cm accuracy.

Vorenen, Mikko↗