PERT simulation of experimental design work
The basic principles of constructing the models and rules for their application in the development of PERT charts are discussed.
Kurmanaliyev, T. I.↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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PERTS: A Prototyping Environment for Real-Time Systems
PERTS is a prototyping environment for real-time systems. It is being built incrementally and will contain basic building blocks of operating systems for time-critical applications, tools, and performance models for the analysis, evaluation and measurement of real-time systems and a simulation/emulation environment. It is designed to support the use and evaluation of new design approaches, experimentations with alternative system building blocks, and the analysis and performance profiling of prototype real-time systems.
Liu, Jane W. S.↗
Pert and procurement policy
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Hayya, J. C.↗
PERT TIME III
System utilizing time oriented network structure is automated aid for monitoring and scheduling various activities within particular project. Program provides management with means to evaluate accurately status of project and helps control time, cost, and manpower.
Source record↗
PERT activity description list, abbreviated
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Source record↗
(U) Using the MCNP6 Perturbation Capability for Source Nuclide Density Sensitivities
The Taylor series (differential operator) perturbation method, as implemented in the PERT capability in MCNP6 (Ref. 1), can be used for first- and second-order sensitivity analyses in fixed-source problems. Unfortunately, the PERT capability does not yet work with point-detector (F5) or pulse-height (F8) tallies. Also, the second-order Taylor series term lacks the cross terms that would allow the calculation of mixed sensitivities. Finally, the PERT capability does not compute any sensitivities involving the source in a fixed-source problem. When neutrons or gamma rays are emitted due to radioactive decay, the source rate density depends intrinsically on the nuclide densities in the source material. When the PERT capability in MCNP6 is used to compute sensitivities of a response to nuclide and material densities, those sensitivities do not include the effect of the source.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
New Global Electron Density Observations from GPS-RO in the D- and E-Region Ionosphere
A novel retrieval technique is developed for electron density (N(sub e)) in the D- and E-region (80-120 km) using the high-quality 50-Hz GPS radio occultation (GPS-RO) phase measurements. The new algorithm assumes a slow, linear variation in the F-region background when the GPS-RO passes through the D- and E-region, and extracts the N(sub e) profiles at 80-130 km from the phase advance signal caused by N(sub e). Unlike the conventional Abel function, the new approach produces a sharp N(sub e) weighting function in the lower ionosphere, and the N(sub e) retrievals are in good agreement with the IRI (International Reference Ionosphere) model in terms of monthly maps, zonal means and diurnal variations. The daytime GPS-RO N(sub e) profiles can be well characterized by the alpha-Chapman function of three parameters (N(sub mE), h(sub mE) and H), showing that the bottom of E-region is deepening and sharpening towards the summer pole. At high latitudes the monthly GPS-RO N(sub e) maps at 80-120 km reveal clear enhancement in the auroral zones, more prominent at night, as a result of energetic electron precipitation (EEP) from the outer radiation belt. The D-/E-region auroral N(sub e) is strongly correlated with K(sub p) on a daily basis. The new N(sub e) data allow further comprehensive analyses of the sporadic E (E(sub s)) phenomena in connection with the background N(sub e) in the E-region. The layered (2-10 km) and fluctuated (less than 2 km) E(sub s) components, namely N(sub e_Layer) than N(sub e_Pert), are extracted with respect to the background N( sub e_Region) on a profile-by-profile basis. The N(sub e_Layer) component has a strong but highly-refined peak at approximately 105 km, with an amplitude smaller than N(sub e_Region) approximately by an order of magnitude. The N(sub e_Pert) component, which was studied extensively in the past, is approximately 2 orders of magnitude weaker than N(sub e_Layer). Both N(sub e_Layer) and N(sub e_Pert) are subject to significant diurnal and semidiurnal variations, showing downward progression with local time in amplitude. The 11-year solar cycle dominates the N(sub e) interannual variations, showing larger N(sub e_Region) and N(sub e_Layer) but smaller N(sub e_Pert) amplitudes in the solar maximum years. Enhanced Ne profiles are often observed in the polar winter, showing good correlation with solar proton events (SPEs) and geomagnetic activity. The new methodology offers great potential for retrieving low N(sub e) in the D-region, where radio propagation and communication blackouts can occur due to enhanced ionization. For space weather applications it is recommended for GPSRO operations to raise the top of high-rate data acquisition to approximately 140 km in the future.
GSP-R↗
A Verification of Flux Sensitivity Estimates Using the MCNP Tally Perturbation Tool
Nuclear data is commonly used in applications such as nuclear nonproliferation, safeguards, and criticality safety. More specifically, nuclear data is used in predictive simulation codes like the Monte-Carlo N-Particle (MCNP ® ) transport code, Serpent, and similar radiation transport codes. The improvement of nuclear data enables more precise and accurate simulations, which result in higher fidelity designs and reduced operational/procedural costs. Therefore, the improvement of nuclear data is of paramount importance across the nuclear community. Nuclear data is improved and validated through integral benchmark experiments. The design of benchmark experiments is an extensive process; therefore, these experiments are often optimized on multiple characteristics, including sensitivity to the nuclear data, during the design process. Sensitivity is a measure of how much a quantity changes due to changes in independent variables such as experimental configuration. An experimental design that has a larger sensitivity to the nuclear data of interest will have a larger impact on the accuracy and precision of the validated data. Past integral benchmark experiments have primarily used the effective multiplication factor ($k_{eff}$) as the predominant measured quantity; however, experiments designed with other quantities in mind would be able to optimize on validating different areas of the nuclear data. A primary goal of the EUCLID project is to design, constrain, and reduce compensating errors in experiments focused on quantities other than $k_{eff}$ to better validate nuclear data across the board. Currently, there is a capability in MCNP to easily calculate the sensitivity of $k_{eff}$ to specific nuclear data of numerous reactions types and isotopes (KSEN card); however, the sensitivity of other quantities must be estimated in more strenuous manners. For example, the perturbation feature (PERT card) of MCNP can be used to estimate first-order sensitivities of some response in fixed source simulations. A recent announcement revealed that the first- and second-order perturbation features in previous releases of MCNP contained a bug. It was identified that particles were being scored into the wrong energy bin. The bug is in the most recent public release (MCNP6.2); however, a patch has been added to the most up to date version (MCNP6.2.2) that has not been released publicly. A direct comparison of the PERT card results for an F4 (neutron flux averaged over a cell) tally before and after the patch are shown in figure 1. All simulations used in the sensitivity estimates in this report were performed with MCNP6.2.2. This work verifies the patched MCNP perturbation tool by comparing first order sensitivities made using the PERT card to estimates made using manual perturbation of the compact ENDF (ACE) files.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Assessing UV-Induced Degradation in Bifacial Modules of Different Cell Technologies
Bifacial technology enables solar cells to offer higher power output and lower levelized cost of energy compared to their monofacial counterparts. Here, we examined the adverse effects of ultraviolet-induced degradation (UVID) on a variety of high-efficiency silicon wafer-based bifacial cell technologies, including silicon heterojunction (SHJ), interdigitated back contact (IBC), passivated emitter rear contact (PERC), and passivated emitter rear totally-diffused (PERT). Both the front and rear sides of bifacial cells without any encapsulation were exposed to an artificially accelerated UV exposure test. After 2000 h of UV irradiation, the bifacial cells exhibited greater power loss with backside exposure indicating potential sensitivity of the rear passivation to UV. The highest power degradation is observed in SHJ cells, followed by p-PERC and n-PERT cell technologies. The degradation in SHJ cells is attributed to the reduction in V oc and FF, while the degradation in p-PERC and n-PERT cells is correlated with a significant drop in I sc . This suggests that each cell type/make degrades via different degradation pathways.
bifacial cells↗
Perl Tools for Automating Satellite Ground Systems
The freeware scripting language Pert offers many opportunities for automating satellite ground systems for new satellites as well as older, in situ systems. This paper describes a toolkit that has evolved from of the experiences gained by using Pert to automate the ground system for the Compton Gamma Ray Observatory (CGRO) and for automating some of the elements in the Earth Observing System Data and Operations System (EDOS) ground system at Goddard Space Flight Center (GSFC). CGRO is an older ground system that was forced to automate because of fund cuts. Three 8 hour shifts were cut back to one 8 hour shift, 7 days per week. EDOS supports a new mission called Terra, launched December 1999 that requires distribution and tracking of mission-critical reports throughout the world. Both of these ground systems use Pert scripts to process data and display it on the Internet as well as scripts to coordinate many of the other systems that make these ground systems work as a coherent whole. Another task called Automated Multimodal Trend Analysis System (AMTAS) is looking at technology for isolation and recovery of spacecraft problems. This effort has led to prototypes that seek to evaluate various tools and technology that meet at least some of the AMTAS goals. The tools, experiences, and lessons learned by implementing these systems are described here.
McLean, David↗
UV + Damp Heat Induced Power Losses in Fielded Utility N-Type Si PV Modules
A recent trend in commercial PV modules is a transition to n-type silicon cells, including passivated emitter rear totally diffused (n-PERT), tunnel oxide passivated contact (TOPCon), and silicon heterojunction (SHJ). There is evidence via lab studies that some of these cells are more susceptible to UV induced degradation (UVID), yet there is a lack of confirmation that such degradation occurs in the field. Current IEC standards designed to screen for early module failures require only minimal UV exposure (15 kWh/m2 280-400 nm, ~2-3 months equivalent outdoor exposure). Here, we investigate fielded n-PERT silicon (Si) modules from a commercial utility that show power losses of ~2%/year. We present a comprehensive picture of the physics and chemistry of degradation supported by both module and cell electronic characterization (EL, PL, IV, EQE, and DLIT) and materials-level morphological and chemical analysis (SEM, EDS, XPS, FTIR, and HPLC). All sampled site modules show short circuit current (Isc) and open circuit voltage (Voc) losses when compared to unfielded spares, with the most severely degraded also having losses in fill factor (FF). We identify two different degradation modes contributing to overall power loss: (1) external quantum efficiency (EQE) measurements show losses in the blue range of the spectra, indicative of cell surface recombination losses, and (2) variations in high series resistance (Rs) at the cell level that are correlated with compositional differences in cell metallization. Using unfielded spares, we were able to reproduce Voc, Isc, and EQE losses via a minimum UV stress of 67.5 kWh/m2 (280-400 nm), 4.5x the exposure currently required in IEC 61215-2 (MQT 10). Degradation continued with additional UV dosage equivalent to the fielded modules (405 kWh/m2 total), with power loss leveling out at an average of 6.1%. Subsequent 1000 h of 85% RH/85degrees C damp heat testing showed that cells exposed to UV underwent additional severe series resistance degradation, even those without the susceptible paste composition seen in the field, whereas non-UV exposed cells saw little change. We attribute this to higher concentrations of acetic acid generated on the UV exposed area of the module, leading to degradation of the gridline/cell interface and high Rs. This study is unique in that it reproduces field observed utility scale UVID with an accelerated test and supports the need for standards development for longer UV exposure combined with other stress factors to catch materials interplay within a module package.
14 SOLAR ENERGY↗
UV‐induced degradation of high‐efficiency silicon PV modules with different cell architectures
Abstract Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV‐induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA‐340 fluorescent lamps at 1.24 W·m −2 (at 340 nm) and 45°C through 4.02 MJ·m −2 (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al‐BSF) cells (<−1% on average). The power degradation is largely caused by the decrease in short‐circuit current and open‐circuit voltage. A greater power decrease is observed in bifacial cells with rear‐side exposure compared with those with front‐side exposure, indicating that the rear side is more susceptible to UV damage. Secondary ion mass spectroscopy (SIMS) confirmed an increase in hydrogen concentration near the Si/passivation interface in HJ and IBC cells after UV exposure; the excess of hydrogen could result in hydrogen‐induced degradation and subsequently cause higher recombination losses. Additionally, surface oxidation and hot‐carrier damage were identified in PERT cells. Using a spectral‐based analysis, we obtained an acceleration factor of 5× between unpackaged cells (containing a silicon nitride antireflective coating on the front) in the UV test and an encapsulated module (with the front glass and encapsulant blocking 90% of the UV at 294 nm and 353 nm, respectively) in outdoor conditions. From the analytical calculations, we show that a UV‐blocking encapsulant can reduce UV transmission in the module by an additional factor of ~50.
14 SOLAR ENERGY↗
Atmospheric disturbance model for aircraft and space capable vehicles
An atmospheric disturbance model (ADM) is developed that considers the requirements of advanced aerospace vehicles and balances algorithmic assumptions with computational constraints. The requirements for an ADM include a realistic power spectrum, inhomogeneity, and the cross-correlation of atmospheric effects. The baseline models examined include the Global Reference Atmospheric Model Perturbation-Modeling Technique, the Dryden Small-Scale Turbulence Description, and the Patchiness Model. The Program to Enhance Random Turbulence (PERT) is developed based on the previous models but includes a revised formulation of large-scale atmospheric disturbance, an inhomogeneous Dryden filter, turbulence statistics, and the cross-correlation between Dryden Turbulence Filters and small-scale thermodynamics. Verification with the Monte Carlo approach demonstrates that the PERT software provides effective simulations of inhomogeneous atmospheric parameters.
Chimene, Beau C.↗
Surveyor project status report as of 14 may 1965
Surveyor project progress in flight and ground testing, mission operations and planning, vehicle development, control system, and PERT PROJECT network survey
GROUND TEST↗
An auto-diagrammer
Program to draw flowcharts automatically from PERT, Fortran II, Fortran IV, or FAP cards
PERT PROJECT↗
Adoption of image-driven machine learning for microstructure characterization and materials design: A Perspective
Microstructure characterization enables the development of structure-processing-property relationships critical to several research areas within the broad field of materials science, from alloy design to the assessment of corrosion resistance, and failure analysis. Conventional approaches to material characterization have relied on either qualitative inference by the human ex-pert or software applications that can extract high-level features from images, such as boundary segmentation, average grain diameter, etc. Such approaches rely heavily on subject matter expert user intervention and knowledge of what phases or more generally, what microstructural features, are of interest. The recent surge in the adoption of machine learning techniques to address problems in materials engineering has brought with it an increased interest and application of Image Driven Machine Learning (IDML) approaches. In this work, we review the applications of IDML to the field of materials characterization. A canonical hierarchy of stages is defined, which when put sequentially together completes an IDML study: problem definition, dataset building, model selection and training, model evaluation, and integration with existing instrumentation or simulation workflow. The studies reviewed in this work are analyzed from the perspective of each of these stages. Such a review permits agranular assessment of the field, for example the impact of IDML on materials characterization at the nanoscale, the size of a typical dataset required to train a semantic segmentation model on electron microscopy images, ubiquitousness of transfer learning in the domain, etc. Finally, we discuss the importance of interpretability and explainability in the field of IDML for materials characterization, and provide an overview of two emerging techniques in the field: semantic segmentation and generative adversarial networks.
Baskaran, Arun↗
Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al 2 O 3 with SiN x capping
In this paper, we report on the direct comparison of Al 2 O 3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al 2 O 3 layers with SiN x capping have very similar chemical composition, hydrogen concentration at the Al 2 O 3 /Si interface, and interface defect density (D it ), but the ALD film has slightly higher negative fixed charge (Q f ) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of <5 cm/s on planar and textured un-diffused Si wafers, but the ALD films gave 1 to 8 fA/cm 2 lower emitter saturation current densities (J 0e ) on implanted boron emitters with sheet resistance in the range of 90–180 Ω/. This is attributed to the observed slightly higher negative charge-induced field-effect passivation in the ALD films. However, SiN x /Al 2 O 3 /p + /n/n + passivated emitter rear totally diffused (PERT) cell structures fabricated with 110 and 150 Ω/ emitter in this study showed no appreciable difference in cell efficiency. Device analysis and simulations showed that even for >23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J 0e has negligible effect on cell efficiency. Furthermore, APCVD Al 2 O 3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al 2 O 3 passivated n-type Si solar cells.
14 SOLAR ENERGY↗