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DOE OSTI · 1848496

Analysis of the negative charges injected into a SiO 2 /SiN x stack using plasma charging technology for field-effect passivation on a boron-doped silicon surface

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Min, Kwan Hong, Hwang, Jeong‐Mo, Cho, Eunwan, Song, Hee‐eun, Park, Sungeun, Rohatgi, Ajeet, Kim, Donghwan, Lee, Hae‐Seok, Kang, Yoonmook, Ok, Young‐Woo, Kang, Min Gu. 2020-10-04. Analysis of the negative charges injected into a SiO 2 /SiN x stack using plasma charging technology for field-effect passivation on a boron-doped silicon surface. https://doi.org/10.1002/pip.3340

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