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Dr. Hlavka addresses three aspects of the treatment of temperature dependent photovoltage effects in photoemission spectroscopy of Schottky barrier formation which were first published in references 1 and 2.
The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.
Theoretical and experimental investigations on CdS single crystals and CuxS:CdS photovoltaic cells prepared from CdS single crystals by a chemical-dip procedure are described. The studies are aimed at clarifying cell mechanisms which affect key cell properties (efficiency, reliability, and lifetime) by examining the properties of intrinsic and extrinsic defects in the junction and surface regions and their effects on carrier transport through these regions. The experimental research described includes studies of thermal, infrared, and field quenching of acceptor-doped CdS crystals; investigation of optical and electrical properties of CuxS:CdS photovoltaic cells (current-voltage characteristics, spectral distribution of photocurrent and photovoltage) and the dependence of these properties on temperature and light intensity; measurement of changes, as a result of heat treatment in ultrahigh vacuum, in the spectral distribution of photoconductivity at room temperature and liquid nitrogen temperature, the luminescence spectrum at liquid nitrogen temperature, and the thermally stimulated current curves of CdS crystals; determination of the effect of irradiation with 150 keV (maximum) X-rays on the spectral distribution of photoconductivity and thermally-stimulated current of CdS crystals; and studies of the effect of growth conditions on the photoconductive properties of CdS crystals.
The utility of X-rays as a stimulus for screening high reliability semiconductor microcircuits was studied. The theory of the interaction of X-rays with semiconductor materials and devices was considered. Experimental measurements of photovoltages, photocurrents, and effects on specified parameters were made on discrete devices and on microcircuits. The test specimens included discrete devices with certain types of identified flaws and symptoms of flaws, and microcircuits exhibiting deviant electrical behavior. With a necessarily limited sample of test specimens, no useful correlation could be found between the X-ray-induced electrical response and the known or suspected presence of flaws.
A study to determine the influence of fabrication processes and bulk material properties on the behavior of back surface field (BSF) cells is reported. It is concluded that a photovoltage is generated at the p(+), p back junction of the cell. The concept of majority carrier collection is proposed as a possible mechanism for this generation. Advantages accruing to the advent of BSF cells are outlined.
Specific power output and radiation resistance characteristics developed for thin film silicon solar cells are reported. The technological base for fabricating these high efficiency cells and limitations of cell photovoltage are included. In addition, optical and electronic measurement instrumentation and mathematical analyses aids are included. Antireflection coatings for these cells are discussed.
Optical microscopy, electron microscopy, and X-ray diffraction were utilized to characterize silicon ribbon structure. Complex twin formation was observed in nearly all ribbons examined. Twins formed in the 110-plane 112-line ribbon orientation appear stable, and this orientation may be preferable when the ribbon is utilized for solar cells. In addition to twinning, grain boundaries and other structural defects were observed in the ribbon material. Hall effect, resistivity, spreading resistance, surface photovoltage, and solar cell electrical/optical measurements were performed on ribbon samples and correlated with structural and ribbon growth characteristics. Only those ribbon samples with either single-crystal structure or with 'parallel' twin formations were capable of solar-cell performance approaching that of Czochralski material.
The electron and proton damage coefficients for low resistivity p-type boron-doped silicon were determined from minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. The bulk samples were irradiated with electrons at three energy levels (0.5, 1.5, and 2.5 MeV) using a Dynamitron. Lifetime measurements were made with a steady-state photoconductivity apparatus, and comparison measurements of diffusion length were obtained using the steady-state surface photovoltage method (Goodman, 1961). The diffusion-length damage coefficients increased with decreasing resistivity for boron-doped silicon; this dependence can be qualitatively accounted for using a two-level Hall-Shockley-Read model. The damage coefficients for solar cells were larger than for their bulk-material counterparts. The damage coefficient was apparently independent of the dislocation density in the 0.1 ohm-cm bulk samples and solar cells investigated.
Development, fabrication and applications of CdS solar cells are reviewed in detail. The suitability of CdS cells for large solar panels and microcircuitry, and their low cost, are emphasized. Developments are reviewed by manufacturer-developer. Vapor phase deposition of thin-film solar cells, doping and co-evaporation, sputtering, chemical spray, and sintered layers are reviewed, in addition to spray deposition, monograin layer structures, and silk screening. Formation of junctions by electroplating, evaporation, brushing, CuCl dip, and chemiplating are discussed, along with counterelectrode fabrication, VPD film structures, the Cu2S barrier layer, and various photovoltaic effects (contact photovoltage, light intensity variation, optical enhancement), and various other CdS topics.
Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.
Ferroelectric films of barium titanate were synthesized on silicon and quartz substrates, and the photoelectric effect in the structure consisting of metal deposited ferroelectric barium titanate film silicon was studied. A photovoltage with polarity that depends on the direction of the remanent polarization was observed. The deposition of BaTiO3 on silicon and fused quartz substrates was accomplished by an rf sputtering technique. A series of experiments to study the growth of ferroelectric BaTiO3 films on single crystal silicon and fused quartz substrates were conducted. The ferroelectric character in these films was found on the basis of evidence from the polarization electric field hysteresis loops, capacitance voltage and capacitance temperature techniques and from X-ray diffraction studies.
The ceramic structure was simulated in a form that is more tractable to correlation between experiment and theory. Single crystals (of barium titanate) were fabricated in a simple corrugated structure in which the pedestals of the corrugation simulated the grain while the intervening cuts could be filled with materials simulating the grain boundaries. The observed photovoltages were extremely small (100 mv).
The basic mechanism associated with the photovoltaic phenomena observed in the R.F. sputtered BaTiO3/silicon system is presented. Series of measurements of short circuit photocurrents and open circuit photovoltage were made. The composition depth profiles and the interface characteristics of the BaTiO3/silicon system were investigated for a better understanding of the electronic properties. A Scanning Auger Microprobe combined with ion in depth profiling were used.
A review of the major techniques for measuring minority carrier diffusion lengths in solar cells is given. Limits of applicability are indicated for each method, as relevant to indirect bandgap materials such as silicon, and direct bandgap materials like gallium arsenide. A discussion and bibliography is presented for the following techniques: uniform generation, electron beam induced current, Schottky barrier (and other steady-state) photocurrent, surface photovoltage, transient decay, and luminescence.
The development of an organic semiconductor solar cell and the effects of the recrystallization of metal free phthalocyanine (H2PC) on the characteristics of NESA/H2PC-PVK/Au sandwich cells were investigated. Alfa-H2PC sandwich cells showed photovoltage and photocurrent in a two direction opposite to that shown y as supplied H2PC cells, which consists mainly of beta-H2PC. Some difference was observed in the response times of the two cells. It is suggested that photocharacteristics change with the specific resistance of the H2PC, which is related to its crystal forms. In the cells with low resistance H2PC carriers are generated in H2PC by illumination, while in high resistance H2PC cells, carriers are generated in PVK which is sensitized with H2PC.
Photoelectron spectroscopy is frequently used to study band bending in semiconductors due to charge stored in surface or interface states. This paper examines how such experimental results are modified by photovoltages generated within the band-bending region not only by ambient light sources, but by the incident X-rays themselves. Recent experiments which have suggested dopant-dependent and reversible temperature-dependent band bending in the initial stages of formation of the metal-GaAs(110) interface are used as an example. It is shown that the reported dependence derives from a photovoltaic effect.
It is shown here that much of the recent photoelectron spectroscopy literature describing the onset of pinning in adsorbate-semiconductor systems at low temperature must be reinterpreted in light of surface photovoltaic effects. Two sources of surface charging are discussed, both of which are strongly enhanced at low temperature. The surface photovoltage resulting from separation of electron-hole pairs by the electric field in the depletion region is usually the dominant source of surface potential shifts, and causes flattening of the semiconductor bands. In addition, surface charging due to photoemission into the vacuum may reverse bias a p-type diode at low temperatures, causing increase band bending.
Eight In(AI)GaAs PN junctions grown epitaxially on the semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4V photovoltage per typical In(Al)GaAs junction to over 3 volts for the 1 sq cm laser power converted (LPC) chip. Advantages of multijunction LCP designs include the need for less circuitry for power reconditioning and the potential for lower I(sup 2)R power loss. As an example, these LPC's have a responsivity of approximately 1 amp/watt. With a single junction LPC, 100 watts/sq cm incident power would lead to about 100 A/sq cm short-circuit current at approximately 0.4V open-cicuit voltage. One disadvantage is the large current would lead to a large I(sup 2)R loss which would lower the fill factor so that 40 watts/sq cm output would not be obtained. Another is that few circuits are designed to work at 0.4 volts, so DC-DC power conversion circuitry would be necessary to raise the voltage to a reasonable level. The multijunction LPC being developed in this program is a step toward solving these problems. In the above example, an eight-junction LPC would have eight times the voltage, approximately 3V, so that DC-DC power conversion may not be needed in many instances. In addition, the multijunction LPC would have 1/8 the current of a single-junction LPC, for only 1/64 the I(sup 2)R loss if the series resistance is the same. Working monolithic multijunction laser power converters (LPC's) were made in two different compositions of the In(x)Al(y)Ga(1-x-y)As semiconductor alloy, In(0.53)Ga(0.47)As (0.74 eV) and In(0.5)Al(0.1)Ga(0.4)As (0.87 eV). The final 0.8 sq cm LPC's had output voltages of about 3 volts and output currents up to about one-half amp. Maximum 1.3 micron power conversion efficiencies were approximately 22 percent. One key advantage of multijunction LPC's is that they have higher output voltages, so that less DC-DC power conversion circuitry is needed in applications.