Search NASA⌕ Search

SEARCH · Search NASA

Results for “Power Devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

Preliminary design development of 100 KW rotary power transfer device

Contactless power transfer devices for transferring electrical power across a rotating spacecraft interface were studied. A power level of 100 KW was of primary interest and the study was limited to alternating current devices. Rotary transformers and rotary capacitors together with the required dc to ac power conditioning electronics were examined. Microwave devices were addressed. The rotary transformer with resonant circuit power conditioning was selected as the most feasible approach. The rotary capacitor would be larger while microwave devices would be less efficient. A design analysis was made of a 100 KW, 20 kHz power transfer device consisting of a rotary transformer, power conditioning electronics, drive mechanism and heat rejection system. The size, weight and efficiency of the device were determined. The characteristics of a baseline slip ring were presented. Aspects of testing the 100 KW power transfer device were examined. The power transfer device is a feasible concept which can be implemented using presently available technologies.

Weinberger, S. M.↗

Micro-grid for Future Planetary Surface Needs

Under the current Artemis Program, the National Aeronautics and Space Administration (NASA) will send its next set of astronauts (first woman and next man) to the Moon by 2024 and establish a sustainable presence on the lunar surface by 2028. The challenge of creating a sustained lunar surface presence is significantly different than previous efforts. Lunar surface operations will require access to continuous and highly reliable power to support mission needs, such as to support ISRU operations. Adding to this challenge, the lunar surface operations are not going to be established over a single effort, rather the system and operations will evolve and grow over time (years). The first initial loads that arrive on the lunar surface will be integrated to their own dedicated power sources. As the lunar surface operations grow, so will the demand for power and at some point these individual loads will require more power than can be generated with any single power device. This power demand drives the need for inter-connecting the loads and power devices to share power between them, resulting in a micro-grid. One of the advantages of developing a lunar surface micro-grid is that allows lunar surface operations to resemble electrical utility operations on Earth; it allows power to be generated where it is convenient and allows power to be consumed where it is convenient, rather than negotiating between generation and consumption. The micro-grid concept also provides another benefit of affording the ability to increase overall system reliability by integrating dissimilar power generation and energy storage devices together, for example modifying the power generation strategy to include both solar arrays and nuclear. Creating a lunar surface micro-grid has its advantages, however there are significant challenges associated with an evolvable micro-grid concept. The challenges include how to efficiently transmit large amounts of power (10kW+) long distances (1kW+), how to effectively integrate dissimilar power generation and energy storage devices to maximize power consumption and minimize downtime, and how to physically connect these devices together with a connector that can survive the lunar environment (dust, extreme cold temperatures) and is capable of both astronaut and robotic operation. The basic components of the micro-grid have to be designed to ensure the system is sustainable, modular, and reconfigurable. An interface to the micro-grid has to be designed that allows for additional technologies, some of which may not yet be fully designed, to easily integrate into the micro-grid concept. This presentation discusses these lunar challenges in some more depth and offers a path forward in designing an evolvable micro-grid to meet the needs of the lunar surface operations and proposes a Universal Micro-grid Interface Converter to connect these dissimilar power sources and mission loads to the micro-grid.

Jeffrey Csank↗

A Thermal and Electrical Analysis of Power Semiconductor Devices

The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

Vafai, Kambiz↗

Power semiconductor device with negative thermal feedback

Composite power semiconductor avoids second breakdown and provides stable operation. It consists of an array of parallel-connected integrated circuits fabricated in a single chip. The output power device and associated low-level amplifier are closely coupled thermally, so that they have a predetermined temperature relationship.

Borky, J. M.↗

Electronic load for testing power generating devices

Instrument tests various electric power generating devices by connecting the devices to the input of the load and comparing their outputs with a reference voltage. The load automatically adjusts until voltage output of the power generating device matches the reference.

Friedman, E. B.↗

Materials and Device Optimization for High Power SiGe HBT Amplifiers at X-Band Frequencies

The driving force behind SiGe development is the potential for high frequency and high power devices that provide comparable functionality as more expensive semiconductors such as InP and GaAs, but at a much lower cost. Additional advantages are the potential for incorporating SiGe devices onto monolithic Si chips and fabricating entire systems, such as receiver front-ends or RF power amplifiers, on a single chip. The work reported in this paper summarizes the materials and simulation aspects of a much larger project, which will eventually lead to SiGe HBT amplifiers with output powers greater than 1 W and over 35 dB gain at X-band frequencies. To achieve these goals, accurate analysis of the materials properties, especially in the base region, and highly refined amplifier design procedures must be established. In this paper we report the precision that may be obtained using optical ellipsometry to monitor the base and emitter thicknesses and Ge content of the base. We also report the extent of crystalline degradation in state-of-the-art SiGe films with high Ge contents. The objective of this work is to access the materials quality of HBT structures, and then use this data to model how various defects impact device performance, and which defects are most likely to limit high power and/or high frequency performance.

Mueller, C. H.↗

Microfabricated thermoelectric power-generation devices

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Fleurial, Jean-Pierre↗

Microfabricated thermoelectric power-generation devices

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Fleurial, Jean-Pierre↗

Application of copper-carbon fiber composites to power semiconductor devices

Copper-carbon composite electrodes are used in a series of power semiconductor devices, i.e., resin molded diodes, button-type diodes, stud-type diodes, power modules, and integrated circuit igniter modules. The properties of these power semiconductor devices compare favorably with those conventional devices using Mo or W electrodes. In thermal fatigue tests, no degradation in the electrical and mechanical characteristics of these devices are observed. The new composite electrode with carbon fibers satisfies all of the major requirements for the electrodes in power semiconductor devices.

Kuniya, Keiichi↗

Procedure for pressure contact on high-power semiconductor devices free of thermal fatigue

To eliminate thermal fatigue, a procedure for manufacturing semiconductor power devices with pure pressure contact without solid binding was developed. Pressure contact without the use of a solid binding to avoid a limitation of the maximum surface in the contact was examined. A silicon wafer covered with a relatively thick metal layer is imbedded with the aid of a soft silver foil between two identically sized hard contact discs (molybdenum or tungsten) which are rotationally symmetrical. The advantages of this concept are shown for large diameters. The pressure contact was tested successfully in many devices in a large variety of applications.

Knobloch, J.↗

Power Switching Device

The MOS-Controlled Thyristor is a new type of power switching device for faster and more efficient control and management of power electronics. It enables power electronic switching at frequencies of 50 to 100 thousand times a second with much lower power losses than other semiconductor devices. Advantages include electric power savings and smaller space. The device is used in motor and power controllers, AC & DC motor drives and induction heating. Early development was supported by Lewis Research Center (LEW) and other agencies. General Electric''s power semiconductor operation, the initial NASA contractor, was later purchased by Harris Semiconductor.

Source record↗

The Effect of Cosmic Rays on MSI Devices

Low-power devices susceptible to cosmic-ray particles. Five MSI device technologies, including TTL, low power TTL, Schottky, CMOS, and low-power Schottky, subjected to 120-MeV krypton-ion beam from cyclotron and monitored for single-event upset. Results find terrestrial application for radiation hardening of electronic devices and systems.

Nichols, D. K.↗

Hybrid Power Management (HPM)

The NASA Glenn Research Center s Avionics, Power and Communications Branch of the Engineering and Systems Division initiated the Hybrid Power Management (HPM) Program for the GRC Technology Transfer and Partnership Office. HPM is the innovative integration of diverse, state-of-the-art power devices in an optimal configuration for space and terrestrial applications. The appropriate application and control of the various power devices significantly improves overall system performance and efficiency. The advanced power devices include ultracapacitors and fuel cells. HPM has extremely wide potential. Applications include power generation, transportation systems, biotechnology systems, and space power systems. HPM has the potential to significantly alleviate global energy concerns, improve the environment, and stimulate the economy. One of the unique power devices being utilized by HPM for energy storage is the ultracapacitor. An ultracapacitor is an electrochemical energy storage device, which has extremely high volumetric capacitance energy due to high surface area electrodes, and very small electrode separation. Ultracapacitors are a reliable, long life, maintenance free, energy storage system. This flexible operating system can be applied to all power systems to significantly improve system efficiency, reliability, and performance. There are many existing and conceptual applications of HPM.

Eichenberg, Dennis J.↗

Method for remotely powering a device such as a lunar rover

A method of supplying power to a device such as a lunar rover located on a planetary surface is provided. At least one, and preferably three, laser satellites are set in orbit around the planet. Each satellite contains a nuclear reactor for generating electrical power. This electrical power is converted into a laser beam which is passed through an amplifying array and directed toward the device such as a lunar rover. The received laser beam is then converted into electrical power for use by the device.

Deyoung, Russell J.↗

Space station power management and distribution

The power system architecture is presented by a series of schematics which illustrate the power management and distribution (PMAD) system at the component level, including converters, controllers, switchgear, rotary power transfer devices, power and data cables, remote power controllers, and load converters. Power distribution options, reference power management, and control strategy are also outlined. A summary of advanced development status and plans and an overview of system test plans are presented.

Teren, F.↗

Multicomponent droplet combustion and soot formation in microgravity

Most practical fuels which are burned in combustion-powered devices, stationary power plants, and incinerators are multicomponent in nature. The differing properties of fuels effects the combustion behavior of the blend. Blending can be useful to achieve desired ends, such as increasing burning rates and reducing extinction diameter and soot formation. Of these, particulate emissions is one of the most important concerns because of its impact on the environment. It is also the least understood and most complicated aspect of droplet combustion. Because of this fact, a well characterized flow field and simplified flame shape can improve the understanding of soot formation during droplet combustion. The simplest flame shape to analyze for a droplet, while still maintaining the integrity of the droplet geometry with its inherent unsteadiness, is spherical with its associated one-dimensional flow field. This project will concern soot formation in microgravity droplet flames and some parameters that effect it. Because the project has not yet begun, this paper will briefly review some related results on this subject.

Avedisian, C. Thomas↗