SEARCH · Search NASA
Results for “Power Devices”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices
Not provided.
Development of Vertical GaN Power Devices for Use in Electric Vehicle Drivetrains (invited).
Abstract not provided.
Implosion Dynamics and X-ray Characteristics of Mid-Atomic-Number Materials on University-Scale Pulsed Power Devices.
Abstract not provided.
Progress in Fabrication and Characterization of Vertical GaN Power Devices (invited).
Abstract not provided.
A Co-Design Approach to Understanding the Impact of Ultra-Wide-Bandgap Semiconductor Material Properties on Power Device Performance (invited).
Abstract not provided.
Ultrawide Bandgap Semiconductors: Influence of Material Properties on Power Device Performance.
Abstract not provided.
Reliability of GaN power devices: Current status and Future challenges.
Abstract not provided.
Ultrawide Bandgap Semiconductors: Influence of Material Properties on Power Device Performance.
Abstract not provided.
Progress in Medium-Voltage Vertical GaN Power Devices
Explore the source record for details and available documents.
Development of Medium-Voltage High-Current Vertical GaN Power Devices
Explore the source record for details and available documents.
Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices
Explore the source record for details and available documents.
Modeling Heat Flow Across a Compression Bonded GaN-Diamond Interface for Vertical Power Devices
Explore the source record for details and available documents.
Reduction of Defects at or near ALD-Al2O3/GaN Interfaces for Improved Electrical Performance of GaN Power Devices
Explore the source record for details and available documents.
Current Source Gate Driver for dV/dt Testing of SiC Power Devices.
Abstract not provided.
Low-leakage regrown GaN p-n junctions for GaN power devices
Fabricating a regrown GaN p-n junction includes depositing a n-GaN layer on a substrate including n + -GaN, etching a surface of the n-GaN layer to yield an etched surface, depositing a p-GaN layer on the etched surface, etching a portion of the n-GaN layer and a portion of the p-GaN layer to yield a mesa opposite the substrate, and passivating a portion of the p-GaN layer around an edge of the mesa. The regrown GaN p-n junction is defined at an interface between the n-GaN layer and the p-GaN layer. The regrown GaN p-n junction includes a substrate, a n-GaN layer on the substrate having an etched surface, a p-GaN layer on the etched surface, a mesa defined by an etched portion of the n-GaN layer and an etched portion of the p-GaN layer, and a passivated portion of the p-GaN layer around an edge of the mesa.