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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

CMS HGCAL ECON-D ASIC : Impact of CMOS fabrication process tuning on performance and radiation tolerance

The CMS experiment’s High Granularity Calorimeter (HGCAL) upgrade will replace CMS’s existing endcap calorimeters in preparation for the High Luminosity LHC. To effectively use over 6 million channels of this “imaging”calorimeter, CMS has developed two novel Endcap Concentrator (ECON) ASICs to perform data compression/selection on detector. The ECON-D ASIC operates on the 750kHz data path, and the ECON-T ASIC on the 40MHz trigger path. These 65 nm CMOS ASICs are radiation tolerant to 200 Mrad and low power, operating at less than 2.5 mW/channel. The first full-functionality prototype ECONs were produced and characterized in 2021-23, and an initial engineering run was performed in 2024. ECON-D radiation testing for the engineering run revealed that the chip’s internal SRAMs produce intermittent read errors for a non-negligible fraction of chips. Further investigation indicated that the SRAM performance is highly sensitive to the exact parameters of the CMOS fabrication process. To both study this process sensitivity and mitigate SRAM performance issues, twenty ECON wafers were produced in 2025 with a range of doping concentrations designed to tune the underlying transistor threshold voltage by 0%, 5%, 10%, and 15% from nominal. This talk will present first measurements of ECON-D performance, power consumption, and radiation tolerance for these four variations of CMOS process.

Syal, Chinar [Fermilab]↗
NASA NTRS2018

Robust, Radiation Tolerant Command and Data Handling and Power System Electronics for SmallSats

In today's budgetary environment, there is significant interest within the National Aeronautics and Space Administration (NASA) to enable small robotic science missions that can be executed faster and cheaper than previous larger missions. To help achieve this, focus has shifted from using exclusively radiation-tolerant or radiation-hardened parts to using more commercial-off-the-shelf (COTS) components for NASA small satellite missions that can last at least one year in orbit. However, there are some portions of a spacecraft's avionics, such as the Command and Data Handling (C&DH) subsystem and the Power System Electronics (PSE) that need to have a higher level of reliability that goes beyond what is attainable with currently available COTS parts. While there are a number of COTS components that can withstand a total ionizing dose (TID) of tens or hundreds of kilorads, there is still a great deal of concern about tolerance to and mitigation of single-event effects (SEE).

6U satellite↗
NASA NTRS2022

Radiation Tolerance and Mitigation for Neuromorphic Processors

Neuromorphic processors are designed to execute Deep Neural Networks (DNNs) at very high speed using only a fraction of the electrical power needed to run a DNN on a traditional CPU or GPU. This unique capability makes Neuromorphic processors a prime candidate for space systems, where advanced computational tasks like image analysis, depth map reconstruction, or rover control need to be executed in a power-starved environment. In contrast to the growing number of applications of Neuromorphic processors in smart phones, the automotive and robotics domain, the space environment is unforgiving because of extreme temperatures and high levels of radiation. Any space system, operating beyond LEO requires computing hardware that is resilient against radiation effects. However, Neuromorphic processors have not yet been designed or tested for their radiation tolerance. In this report, we consider traditional methods of detection of radiation events and mitigation via redundancy and gauge their effectiveness on DNNs. In contrast to traditional flight software, however, neural networks represent a statistical algorithm, which might affect its resilience against radiation events. We will focus on the analysis of the tolerance of DNNs with respect to radiation events and discuss techniques to detect radiation hits using on-chip triple modular redundancy (TMR) on an Intel Loihi neuromorphic processor and to mitigate radiation damage. We describe an architecture for on-chip TMR for the Intel Loihi and present results of initial experiments.

Neural Networks↗
DOE OSTI2020

In-Situ Helium Implantation and TEM Investigation of Radiation Tolerance to Helium Bubble Damage in Equiaxed Nanocrystalline Tungsten and Ultrafine Tungsten-TiC Alloy

The use of ultrafine and nanocrystalline materials is a proposed pathway to mitigate irradiation damage in nuclear fusion components. Here, we examine the radiation tolerance of helium bubble formation in 85 nm (average grain size) nanocrystalline-equiaxed-grained tungsten and an ultrafine tungsten-TiC alloy under extreme low energy helium implantation at 1223 K via in-situ transmission electron microscope (TEM). Helium bubble damage evolution in terms of number density, size, and total volume contribution to grain matrices has been determined as a function of He+ implantation fluence. The outputs were compared to previously published results on severe plastically deformed (SPD) tungsten implanted under the same conditions. Large helium bubbles were formed on the grain boundaries and helium bubble damage evolution profiles are shown to differ among the different materials with less overall damage in the nanocrystalline tungsten. Compared to previous works, the results in this work indicate that the nanocrystalline tungsten should possess a fuzz formation threshold more than one order of magnitude higher than coarse-grained tungsten.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Radiation tolerance of boron doped dendritic web silicon solar cells

The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

Rohatgi, A.↗
NASA NTRS1988

Spacecraft electronics design for radiation tolerance

Current design practices are described and future trends in spacecraft electronics which are likely to alter traditional approaches are discussed. A summary of radiation effects and radiation tolerance requirements typically levied on spacecraft designs is provided. Methods of dealing with radiation and testability issues are considered.

Rasmussen, Robert D.↗
NASA NTRS2002

Radiation Tolerant Antifuse FPGA

The total dose performance of the antifuse FPGA for space applications is summarized. Optimization of the radiation tolerance in the fabless model is the main theme. Mechanisms to explain the variation in different products are discussed.

Wang, Jih-Jong↗
NASA NTRS1969

Radiation tolerant silicon nitride insulated gate field effect transistors

Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.

Newman, P. A.↗
NASA NTRS1988

The effect of different module configurations on the radiation tolerance of multijunction solar cells

The effect of different module configurations on the performance of multijunction (MJ) solar cells in a radiation environment was investigated. Module configuration refers to the electrical circuit in which the subcells of the multijunction cell are wired. Experimental data for AlCaAs, GaAs, InGaAs, and silicon single-junction concentrator cells subjected to 1 MeV electron irradiation was used to calculate the expected performance of AlGaAs/InGaAs, AlGa/silicon, GaAs/InGaAs, and GaAs/silicon Mj concentrator cells. These calculations included independent, series, and voltage-matched configurations. The module configuration was found to have a significant impact on the radiation tolerance characteristic of the MJ cells.

Gee, James M.↗
NASA NTRS2011

Radiation-Tolerant Intelligent Memory Stack - RTIMS

This innovation provides reconfigurable circuitry and 2-Gb of error-corrected or 1-Gb of triple-redundant digital memory in a small package. RTIMS uses circuit stacking of heterogeneous components and radiation shielding technologies. A reprogrammable field-programmable gate array (FPGA), six synchronous dynamic random access memories, linear regulator, and the radiation mitigation circuits are stacked into a module of 42.7 42.7 13 mm. Triple module redundancy, current limiting, configuration scrubbing, and single- event function interrupt detection are employed to mitigate radiation effects. The novel self-scrubbing and single event functional interrupt (SEFI) detection allows a relatively soft FPGA to become radiation tolerant without external scrubbing and monitoring hardware

Ng, Tak-kwong↗
DOE OSTI2025

Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance

This study explores the radiation resilience of GaN high-electron-mobility transistors (HEMTs) under various preconditioning treatments—pristine, electro-pulsed, electrically overstressed, and 60 Co gamma-irradiated—with a focus on enhancing survivability in high-radiation environments. Key findings emphasize the gate region’s central role in radiation sensitivity, with increased defect concentrations leading to reduced sensitivity—as determined from reduced single-event transient intensities during pulsed-laser studies—and impacting charge-transport dynamics. Notably, the most sensitive region shifted as a function of bias state, with the drain side of the gate being most sensitive under negative gate bias and the source side under unbiased conditions due to two-dimensional electron gas disruptions. These insights clarify the mechanisms influencing radiation sensitivity in microelectronics and highlight the potential of defect and strain engineering to enhance the radiation hardness of GaN HEMTs across various operational states, providing valuable guidance for applications in space, defense, and other radiation-rich environments.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Radiation tolerance studies of the HV-mux GaNFETs for the HL-LHC ATLAS ITk Strip detector

For the High-Luminosity upgrade of the LHC, the current ATLAS inner detector will be replaced with a new silicon charged-particle tracker, the ITk, which consists of the ITk Pixel and the ITk Strip subdetector. The high voltage multiplexing (HV-Mux) GaNFETs are radiation-tolerant transistors that permit switching off high voltage to malfunctioning sensors on the ITk Strip modules. To ensure the reliability of the GaNFETs in the high radiation environment expected at the HL-LHC, a sample of the production batch was exposed to gamma radiation. Finally, the GaNFETs were characterized pre-irradiation and post-irradiation, and monitored during irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2013

A Multi-Environment Thermal Control System With Freeze-Tolerant Radiator

Future space exploration missions require advanced thermal control systems (TCS) to dissipate heat from spacecraft, rovers, or habitats operating in environments that can vary from extremely hot to extremely cold. A lightweight, reliable TCS is being developed to effectively control cabin and equipment temperatures under widely varying heat loads and ambient temperatures. The system uses freeze-tolerant radiators, which eliminate the need for a secondary circulation loop or heat pipe systems. Each radiator has a self-regulating variable thermal conductance to its ambient environment. The TCS uses a nontoxic, water-based working fluid that is compatible with existing lightweight aluminum heat exchangers. The TCS is lightweight, compact, and requires very little pumping power. The critical characteristics of the core enabling technologies were demonstrated. Functional testing with condenser tubes demonstrated the key operating characteristics required for a reliable, freeze-tolerant TCS, namely (1) self-regulating thermal conductance with short transient responses to varying thermal loads, (2) repeatable performance through freeze-thaw cycles, and (3) fast start-up from a fully frozen state. Preliminary coolant tests demonstrated that the corrosion inhibitor in the water-based coolant can reduce the corrosion rate on aluminum by an order of magnitude. Performance comparison with state-of-the-art designs shows significant mass and power saving benefits of this technology.

Chen, Weibo↗
DOE OSTI2020

100 Gbps Radiation Tolerant Optical Transceiver (Final Technical Report)

The overall technical objective in phase I for the Surface Emitting Laser-Electro-Absorption Modulator (EAM) was to demonstrate feasibility of this approach by designing and building the laser-EAM chips, optimizing the fabrication process for the Laser/EAM in a series of 3 fabrication runs, irradiating Laser/EAM chips from each run and DC testing of the chips post radiation. 100 Gbps/channel testing would be done at the end of the phase II program before and after radiation. The overall technical objective for the driver circuit was to demonstrate the radiation tolerance of a circuit using the same technology as the driver, and to design the appropriate driver circuit.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Proton Radiation Tolerance of Wide and Narrow Band Gap Perovskite Solar Cells

Two different single junction mixed organic-inorganic halide perovskite solar cells (PSCs) were assessed for their tolerance to high energy proton radiation. Both the narrow band gap mixed tin-lead iodide and wide band gap lead iodide-bromide show remarkable tolerance for fluences up to 1x10 11 p/cm 2 . Both materials show a retention of open circuit voltage and decrease in dark current densities indicating minimal effect on SRH recombination that typically plagues traditional III-V based solar cells. Additionally, a control device that was processed without the perovskite absorber layer showed better diode characteristics and lower dark current densities after proton irradiation. The tolerance of these perovskite as a class of materials is promising for multijunction tandem flexible photovoltaic devices.

perovskite↗