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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Integrated-Circuit Broadband Infrared Sources

Microscopic devices consume less power, run hotter, and are more reliable. Simple, compact, lightweight, rapidly-responding reference sources of broadband infrared radiation made available by integrated-circuit technology. Intended primarily for use in calibration of remote-sensing infrared instruments, devices eventually replace conventional infrared sources. New devices also replace present generation of miniature infrared sources. Self-passivating nature of poly-crystalline silicon adds to reliability of devices. Maximum operating temperature is 1,000 K, and power dissipation is only one-fourth that of prior devices.

Lamb, G.↗

Electronic Components and Systems for Cryogenic Space Applications

Electronic components and systems capable of operation at cryogenic temperatures are anticipated in many future NASA space missions such as deep space probes and planetary surface exploration. For example, an unheated interplanetary probe launched to explore the rings of Saturn would reach an average temperature near Saturn of about - 183 C. In addition to surviving the deep space harsh environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing payload development and launch costs. Terrestrial applications where components and systems must operate in low temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. An on-going research and development program at the NASA Glenn Research Center focuses on the development of reliable electronic devices and efficient power systems capable of surviving in low temperature environments. An overview of the program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained from in-house component testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Patterson, R. L.↗

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Neudeck, P. G.↗

Nanotube Production Devices Expand Research Capabilities

In order for the Hubble Space Telescope to take incredible, never-seen-before shots of celestial bodies and then send them back to Earth, the spacecraft needs power. While in orbit, Hubble cannot plug into an electrical outlet or stop at a store for some batteries. One of the ways NASA supplies power aboard a spacecraft is by harnessing energy from the most powerful entity in the solar system: the Sun. Since the 1960s, photovoltaic technology, or technology that converts sunlight into electricity, has been instrumental in the exploration of space. To build upon existing photovoltaic technology, NASA s Glenn Research Center has worked on a variety of innovative designs and materials to incorporate into photovoltaic cells, the building blocks of solar power systems. One of these materials is the carbon nanotube - a tiny structure about 50,000 times finer than the average human hair, with notably high electrical and thermal conductivity and an extreme amount of mechanical strength. Such properties give carbon nanotubes great potential to enhance the reliability of power generation and storage devices in space and on Earth. Dennis J. Flood, the branch chief of the photovoltaic division at Glenn in the 1990s, was looking into using carbon nanotubes to improve the efficiency of solar cells when he ran into a major roadblock - high-quality carbon nanotubes were not readily available. To address this problem, one of the chemists in Flood s group came up with a process and system for growing them. A senior chemist at Glenn, Aloysius F. Hepp, devised an injection chemical vapor deposition process using a specific organometallic catalyst in a two-zone furnace. Hepp's group found the unique process produced high-quality carbon nanotubes with less than 5 percent metal impurity. In addition, the process was more efficient than existing techniques, as it eliminated pre-patterning of the substrate used for growing the nanotubes, a timely and cost-prohibitive step.

Source record↗

Development of high frequency low weight power magnetics for aerospace power systems

A dominant design consideration in the development of space type power mangetic devices is the application of reliable thermal control methods to prevent device failure which is due to excessive temperature rises and hot temperatures in critical areas. The resultant design must also yield low weight, high efficiency, high reliability and maintainability, and long life. The weight savings and high efficiency that results by going to high frequency and unique thermal control techniques is demonstrated by the development of a 25 kVA, 20 kHz space type transformer under the power magnetics technology program. Work in the area of power rotary transformer is also discussed.

Schwarze, G. E.↗

Development of high frequency low weight power magnetics for aerospace power systems

A dominant design consideration in the development of space type power magnetic devices is the application of reliable thermal control methods to prevent device failure which is due to excessive temperature rises and hot temperatures in critical areas. The resultant design must also yield low weight, high efficiency, high reliability and maintainability, and long life. The weight savings and high efficiency that results by going to high frequency and unique thermal control techniques is demonstrated by the development of a 25 kVA, 20 kHz space type transformer under the power magnetics technology program. Work in the area of power rotary transformer is also discussed.

Schwarze, G. E.↗

Cyclic and low temperature effects on microcircuits

Cyclic temperature and low temperature operating life tests, and pre-/post-life device evaluations were used to determine the degrading effects of thermal environments on microcircuit reliability. Low power transistor-transistor-logic gates and linear devices were included in each test group. Device metallization systems included aluminum metallization/aluminum wire, aluminum metallization/gold wire, and gold metallization/gold wire. Fewer than 2% electrical failures were observed during the cyclic and low temperature life tests and the post-life evaluations revealed approximately 2% bond pull failures. Reconstruction of aluminum die metallization was observed in all devices and the severity of the reconstruction appeared to be directly related to the magnitude of the temperature excursion. All types of bonds except the gold/gold bonds were weakened by exposure to repeated cyclic temperature stress.

Weissflug, V. A.↗

Particulate Sensor Technology Development at NASA Glenn Research Center

GRC has developed multiple innovative particulate sensor technologies for spacecraft cabin environmental monitoring, spacecraft fire safety, and lunar dust characterization. This has been driven by lack of commercial (COTS) devices to meet the volume, mass, power, reliability, and measurement requirements of any given application.

Fischer, David G.↗

Microgrid for Lunar Surface Power

Sustained lunar surface operations will require access to continuous and highly reliable power to support mission needs and an ability to evolve and grow over time (years). The first initial loads that arrive on the lunar surface will contain their own dedicated power sources. Over time, as the lunar surface operations and power demands grow, these individual power loads will require more power than can be generated with any single power device. This demand drives the need for inter-connecting loads and power devices to share power between them, resulting in a micro-grid. One advantage of developing a lunar surface micro-grid is that it will allow lunar surface operations to resemble electrical utility operations on Earth; it allows power to be generated where it is convenient and allows power to be consumed where it is convenient and required. The micro-grid concept also provides another benefit of affording the ability to increase overall system reliability by integrating dissimilar power generation and energy storage devices together, for example modifying the power generation strategy to include both solar arrays and nuclear. This talk provides an overview of NASA’s interest in developing a lunar microgrid and provides areas where external entities can play a role in developing futuristic power needs.

Jeffrey Csank↗

A Perspective on Multi-Source Energy Harvesting Technology Using Piezoelectric and Thermoelectric Materials

Energy harvesting using various locally available energy sources such as vibration energy, heat, sound, or magnetic field have become attractive topics for supplying power to modular electronic devices making them run independently in extreme environments. In this paper, we will be discussing the perspectives on thermoelectric (TE) and piezoelectric materials and devices, and then the concept of multi-source energy harvester using piezoelectric and thermoelectric devices and integration of them into a reliable and independent power source. TE materials having low thermal conductivity and high figure-of-merit ( zT ) are developed to convert even a small temperature gradient efficiently into electrical energy with the state-of-the-art conversion efficiency of ~15% and output power of ~56 W from single device. The piezoelectric device architecture is configured using high performance piezoelectric ceramics (Cu-Mn-PIN-PMN-PT). These ceramics exhibit high piezoelectric coefficient with high mechanical quality factor and low dielectric loss factor. Using these piezoelectric materials, power density as high a 2 mW/cm 2 is demonstrated in 1-1.5 g vibration environments. The piezoelectric device is attached on the surface of TE module to capture both the vibration and thermal energy sources to realize dual mode energy harvester. The multi-energy transfer strategy opens opportunities for a future generation of wireless and modular electronic devices. These devices would be useful in powering wearable electronic devices, micro sensor chargers, etc. in extreme environmental conditions using body heat/thermal sources and induced motion/vibrations.

Piezoelectric↗

Micro-grid for Future Planetary Surface Needs

Under the current Artemis Program, the National Aeronautics and Space Administration (NASA) will send its next set of astronauts (first woman and next man) to the Moon by 2024 and establish a sustainable presence on the lunar surface by 2028. The challenge of creating a sustained lunar surface presence is significantly different than previous efforts. Lunar surface operations will require access to continuous and highly reliable power to support mission needs, such as to support ISRU operations. Adding to this challenge, the lunar surface operations are not going to be established over a single effort, rather the system and operations will evolve and grow over time (years). The first initial loads that arrive on the lunar surface will be integrated to their own dedicated power sources. As the lunar surface operations grow, so will the demand for power and at some point these individual loads will require more power than can be generated with any single power device. This power demand drives the need for inter-connecting the loads and power devices to share power between them, resulting in a micro-grid. One of the advantages of developing a lunar surface micro-grid is that allows lunar surface operations to resemble electrical utility operations on Earth; it allows power to be generated where it is convenient and allows power to be consumed where it is convenient, rather than negotiating between generation and consumption. The micro-grid concept also provides another benefit of affording the ability to increase overall system reliability by integrating dissimilar power generation and energy storage devices together, for example modifying the power generation strategy to include both solar arrays and nuclear. Creating a lunar surface micro-grid has its advantages, however there are significant challenges associated with an evolvable micro-grid concept. The challenges include how to efficiently transmit large amounts of power (10kW+) long distances (1kW+), how to effectively integrate dissimilar power generation and energy storage devices to maximize power consumption and minimize downtime, and how to physically connect these devices together with a connector that can survive the lunar environment (dust, extreme cold temperatures) and is capable of both astronaut and robotic operation. The basic components of the micro-grid have to be designed to ensure the system is sustainable, modular, and reconfigurable. An interface to the micro-grid has to be designed that allows for additional technologies, some of which may not yet be fully designed, to easily integrate into the micro-grid concept. This presentation discusses these lunar challenges in some more depth and offers a path forward in designing an evolvable micro-grid to meet the needs of the lunar surface operations and proposes a Universal Micro-grid Interface Converter to connect these dissimilar power sources and mission loads to the micro-grid.

Jeffrey Csank↗

DSP/FPGA Design for a High-Speed Programmable S-Band Space Transceiver

Traditional command uplink receivers are very limited in performance capability, take a long time to acquire, cannot operate on both uplink bands (NASA & AFSCN), and only support low-rate communications. As a result, transceivers end up on many programs critical paths, even though they should be a standard purchased spacecraft subsystem. Also, many missions are impacted by the low effective uplink throughput. In order to tackle these challenges, a transceiver was developed that will provide on-site frequency agility, support of high uplink rates, and operation on both NASA and AFSCN frequency bands. The device is a low-power, high-reliability, and high-performance digital signal processing (DSP) demodulator for an on-orbit programmable command receiver.

Janicik, Jeffrey↗

Space Application Requirements for Organic Avionics

The NASA Marshall Space Flight Center is currently evaluating polymer based components for application in launch vehicle and propulsion system avionics systems. Organic polymers offer great advantages over inorganic corollaries. Unlike inorganics with crystalline structures defining their sensing characteristics, organic polymers can be engineered to provide varying degrees of sensitivity for various parameters including electro-optic response, second harmonic generation, and piezoelectric response. While great advantages in performance can be achieved with organic polymers, survivability in the operational environment is a key aspect for their practical application. The space environment in particular offers challenges that must be considered in the application of polymer based devices. These challenges include: long term thermal stability for long duration missions, extreme thermal cycling, space radiation tolerance, vacuum operation, low power operation, high operational reliability. Requirements for application of polymer based devices in space avionics systems will be presented and discussed in light of current polymer materials.

Watson, Michael D.↗

High-power single-element pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for pumping Er-doped fiber amplifiers

A 980-nm-ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well laser with a maximum single-ended output power of 240 mW from a facet-coated device is fabricated from a graded-index separate-confinement heterostructure grown by molecular-beam epitaxy. The laser oscillates in the fundamental spatial mode, allowing 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. Life testing at an output power of 30 mW per facet from uncoated devices reveals a superior reliability to GaAs/AlGaAs quantum-well lasers but also the need for protective facet coatings for long term reliability at power levels required for pumping Er-doped fiber amplifiers.

Larsson, A.↗

Thermophotovoltaic Cell Technology Transferred to the Department of Energy Laboratory and a Commercial Manufacturer

Researchers in the NASA Lewis Research Center's Photovoltaic Branch have developed novel photovoltaic device, called a Monolithically Interconnected Module (MIM), for use in thermophotovoltaic (TPV) power systems. TPV power systems function by heating an emitter to produce light. This light is then converted into electricity by a photovoltaic device or a solar cell. Possible heat sources for the system include concentrated solar energy, the combustion of various fuels, and nuclear decay. NASA has an interest in TPV systems for deep space (nuclear-powered) and near-Sun (solar-powered) missions. There also are many commercial and military applications for TPV, given its potential for high efficiency, low noise, and reliable power. The Monolithically Interconnected Module consists of many small solar cells that are series-interconnected on a common substrate. The cells are fabricated from indium gallium arsenide (InGaAs), which can convert the near-infrared portion of the emitter output spectrum into electricity. The InGaAs devices are deposited on an indium phosphide (InP) substrate that provides electrical isolation. On the bottom the InP substrate is an infrared reflector that returns all the photons that are not converted by the InGaAs device back to the emitter where they are absorbed. This process helps maintain the emitter temperature and dramatically improves the system efficiency. Monolithically Interconnected Module InGaAs thermophotovoltaic cell developed by Lewis. Compared with conventional TPV cells, this TPV device has higher output voltages and lower resistive losses, higher output power density, simplified thermal management, improved reliability, and higher efficiency. The Monolithically Interconnected Module was initially developed under an internally funded effort (Director's Discretionary Fund). Development is now being funded by another government agency, and prototype devices are being produced by a commercial solar cell manufacturer.

Wilt, David M.↗

Highly Efficient Multilayer Thermoelectric Devices

Multilayer thermoelectric devices now at the prototype stage of development exhibit a combination of desirable characteristics, including high figures of merit and high performance/cost ratios. These devices are capable of producing temperature differences of the order of 50 K in operation at or near room temperature. A solvent-free batch process for mass production of these state-of-the-art thermoelectric devices has also been developed. Like prior thermoelectric devices, the present ones have commercial potential mainly by virtue of their utility as means of controlled cooling (and/or, in some cases, heating) of sensors, integrated circuits, and temperature-critical components of scientific instruments. The advantages of thermoelectric devices for such uses include no need for circulating working fluids through or within the devices, generation of little if any noise, and high reliability. The disadvantages of prior thermoelectric devices include high power consumption and relatively low coefficients of performance. The present development program was undertaken in the hope of reducing the magnitudes of the aforementioned disadvantages and, especially, obtaining higher figures of merit for operation at and near room temperature. Accomplishments of the program thus far include development of an algorithm to estimate the heat extracted by, and the maximum temperature drop produced by, a thermoelectric device; solution of the problem of exchange of heat between a thermoelectric cooler and a water-cooled copper block; retrofitting of a vacuum chamber for depositing materials by sputtering; design of masks; and fabrication of multilayer thermoelectric devices of two different designs, denoted I and II. For both the I and II designs, the thicknesses of layers are of the order of nanometers. In devices of design I, nonconsecutive semiconductor layers are electrically connected in series. Devices of design II contain superlattices comprising alternating electron-acceptor (p)-doped and electron-donor (n)-doped, nanometer- thick semiconductor layers.

Boufelfel, Ali↗