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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Deep Optical Switching on Subpicosecond Timescales in an Amorphous Ge Metamaterial

Active nanostructured optical components show promise as potential building blocks for novel light-based computing and data processing architectures. However, nanoscale all-optical switches that have low activation powers and high-contrast ultrafast switching have been elusive so far. Here, pump–probe measurements performed on amorphous-Ge-based micro-resonator metasurfaces that exhibit strong resonant modes in the mid-infrared are reported. Relative change is observed in transmittance of ΔT/T ≈ 1 with picosecond (down to τ ≈ 0.5 ps) free carrier relaxation rates, obtained with very low pump fluences of 50 μJ cm –2 . In this work, these observations are attributed to efficient free carrier promotion, affecting light transmittance via high quality-factor optical resonances, followed by an increased electron–phonon scattering of free carriers due to the amorphous crystal structure of Ge. Full-wave simulations based on a permittivity model that describes free-carrier damping through crystal structure disorder find excellent agreement with the experimental data. These findings offer an efficient and robust platform for all-optical switching at the nanoscale.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Reversible Morphology Switching of Colloidal Particles

A facile method has been discovered that enables switching of non-cross-linked poly(styrene) (Nx-PS) colloidal particle morphologies, including spherical and anisotropic convex- convex, plano-convex, and concave-convex. The anisotropic morphologies can be achieved readily from spherical Nx-PS particles through control of annealing time at elevated temperatures or surfactant concentration. These anisotropic morphologies can be reversed to spherical at lower temperatures, and reversible morphology switching between any pair of anisotropic morphologies also can be attained. This approach to particle morphology switching establishes a straightforward method for the synthesis of designer anisotropic particles using commercially available spherical particles as starting materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Switch Opening and Exchange Method for Stochastic Distribution Network Reconfiguration

The purpose of distribution network reconfiguration (DNR) is to determine the optimal topology of an electricity distribution network, which is an efficient measure to reduce network power losses. Electricity load demand and photovoltaic (PV) output are uncertain and vary with time of day, and will affect the optimal network topology. Single-hour deterministic DNR is incapable of handling this uncertainty and variability. Therefore, this paper proposes to solve a multi-hour stochastic DNR (SDNR). Existing solution methods for DNR are either inaccurate or excessively time-consuming, and are therefore incapable of solving multi-hour SDNRs for large distribution networks. In this regard, a switch opening and exchange (SOE) method is proposed. Starting from a looped network with all switches closed, the SOE consists of three steps. The first step is to sequentially open the switches until all of the loops are opened. The second and third steps modify the status of branches obtained in the first step to obtain better radial topologies. Five test systems are used to validate the accuracy and fast solution speed of the SOE and the superiority of multi-hour SDNR over single-hour deterministic DNR.

distribution network reconfiguration↗
DOE OSTI2021

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies

Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CDFQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1.17x larger turn-on loss compared to the CS-FQS, while the CS-FQS exhibited a 1.52x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.

Silicon Carbide, Bidirectional Switch, Switching P↗
DOE OSTI2015

Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate

Mg doped lithium niobate (Mg:LN) exhibits several advantages over undoped LN such as resistance to photorefraction, lower coercive fields, and p-type conductivity that is particularly pronounced at domain walls and opens up a range of applications, e.g., in domain wall electronics. Engineering of precise domain patterns necessitates well founded knowledge of switching kinetics, which can differ significantly from that of undoped LN. In this work, the role of humidity and sample composition in polarization reversal has been investigated under application of the same voltage waveform. Control over domain sizes has been achieved by varying the sample thickness and initial polarization as well as atmospheric conditions. In addition, local introduction of proton exchanged phases allows for inhibition of domain nucleation or destabilization, which can be utilized to modify domain patterns. Polarization dependent current flow, attributed to charged domain walls and band bending, demonstrates the rectifying ability of Mg:LN in combination with suitable metal electrodes that allow for further tailoring of conductivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Dual-wavelength Q-switched laser based on a lens-shaped Nd : YAG active element and a Cr{sup 4+}: YAG passive Q-switch

Dual-wavelength Q-switched lasing at wavelengths of 1047 and 1053 nm is achieved in a longitudinally diode-pumped laser with a lens-shaped Nd:YLF active element and a Cr{sup 4+} : YAG passive Q-switch. Dual-wavelength lasing is achieved as a result of transverse mode locking due to the choice of a cavity length corresponding to the close-to-semiconfocal configuration, which provides identical gains for the two laser wavelengths. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Safety Related Concerns with Installation and Use of Switch-Rated Plug/Receptacle Combinations in Lieu of Metal-Enclosed Disconnect Switches

The manufacturers of Nationally Recognized Testing Laboratory (NRTL) listed, switch-rated, plug and receptacle combinations tout their convenience, reliability, efficiency, and compliance with both the National Fire Protection Association (NFPA) 70®, National Electric Code (NEC), and National Fire Protection Association 70E®, The Standard for Electrical Safety in the Workplace, as advantages to using these products in lieu of traditional metal-enclosed disconnect switches. The purpose of this paper is to raise awareness of several unintended consequences that can result when replacement involves high energy cord and plug connected equipment. This paper describes several possible issues in complying with the NFPA 70 Articles 110 and 400 and NFPA 70E Articles 110 and 130 that should be considered when using load rated plug/receptacle combinations. This paper is intended to address high energy circuits typically associated with 480 volt pin and sleeve type connections in applications where incident energy levels may exceed 1.2 calories/centimeter² (cal/cm²).

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2016

Controlled Generation of Singlet Oxygen in Living Cells with Tunable Ratios of the Photochromic Switch in Metal–Organic Frameworks

Abstract Development of a photosensitizing system that can reversibly control the generation of singlet oxygen ( 1 O 2 ) is of great interest for photodynamic therapy (PDT). Recently several photosensitizer–photochromic‐switch dyads were reported as a potential means of the 1 O 2 control in PDT. However, the delivery of such a homogeneous molecular dyad as designed (e.g., optimal molar ratio) is extremely challenging in living systems. Herein we show a Zr‐MOF nanoplatform, demonstrating energy transfer‐based 1 O 2 controlled PDT. Our strategy allows for tuning the ratios between photosensitizer and the switch molecule, enabling maximum control of 1 O 2 generation. Meanwhile, the MOF provides proximal placement of the functional entities for efficient intermolecular energy transfer. As a result, the MOF nanoparticle formulation showed enhanced PDT efficacy with superior 1 O 2 control compared to that of homogeneous molecular analogues.

Park, Jihye↗
DOE OSTI2016

Evaluation of a commercially available passively Q-switched Nd:YAG laser with LiF:F-2(-) saturable absorber for laser-induced breakdown spectroscopy

Interest in passively Q-switched microchip lasers as a means for miniaturization of laser-induced breakdown spectroscopy (LIBS) apparatus has rapidly grown in the last years. To explore the possibility of using a comparatively UV-Vis transparent absorber, we herein present the first report on the evaluation of a commercially available flash lamp-pumped passively Q-switched Nd:YAG laser with LiF:F 2 - saturable absorber as an excitation source in LIBS. Quantitative measurements of barium, strontium, rubidium and lithium in granite, rhyolite, basalt and syenite whole-rock glass samples were performed. Ablation craters produced on a rock glass sample were characterized using a computerized X-ray tomography. Using a gated intensified benchtop spectrometer, limits of detection of 0.97, 23, 37, and 144 ppm were obtained for Li, Sr, Rb, and Ba, respectively. Finally, we discuss the advantages of using such a laser unit for LIBS applications in terms of ablation efficiency, analytical performances, output energy, and standoff capabilities.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Femtosecond optical polarization switching using a cadmium oxide-based perfect absorber

Ultrafast control of the polarization state of light may enable a plethora of applications in optics, chemistry and biology. However, conventional polarizing elements, such as polarizers and waveplates, are either static or possess only gigahertz switching speeds. Here, with the aid of high-mobility indium-doped cadmium oxide (CdO) as the gateway plasmonic material, we realize a high-quality factor Berreman-type perfect absorber at a wavelength of 2.08 μm. On sub-bandgap optical pumping, the perfect absorption resonance strongly redshifts because of the transient increase of the ensemble-averaged effective electron mass of CdO, which leads to an absolute change in the p-polarized reflectance from 1.0 to 86.3%. As a result, by combining the exceedingly high modulation depth with the polarization selectivity of the perfect absorber, we experimentally demonstrate a reflective polarizer with a polarization extinction ratio of 91 that can be switched on and off within 800 fs.

36 MATERIALS SCIENCE↗
DOE OSTI2016

A microbial sensor for organophosphate hydrolysis exploiting an engineered specificity switch in a transcription factor

A whole-cell biosensor utilizing a transcription factor (TF) is an effective tool for sensitive and selective detection of specialty chemicals or anthropogenic molecules, but requires access to an expanded repertoire of TFs. Using homology modeling and ligand docking for binding pocket identification, assisted by conservative mutations in the pocket, we engineered a novel specificity in an Acinetobacter TF, PobR, to ‘sense’ a chemical p-nitrophenol (pNP) and measured the response via a fluorescent protein reporter expressed from a PobR promoter. Out of 107 variants of PobR, four were active when dosed with pNP, with two mutants showing a specificity switch from the native effector 4-hydroxybenzoate (4HB). One of the mutants, pNPmut1 was then used to create a smart microbial cell responding to pNP production from hydrolysis of an insecticide, paraoxon, in a coupled assay involving phosphotriesterase (PTE) enzyme expressed from a separate promoter. We show the fluorescence of the cells correlated with the catalytic efficiency of the PTE variant expressed in each cell. High selectivity between similar molecules (4HB versus pNP), high sensitivity for pNP detection (~2 μM) and agreement of apo- and holo-structures of PobR scaffold with predetermined computational models are other significant results presented in this work.

Jha, Ramesh K.↗
DOE OSTI2022

Electronegative metal dopants improve switching variability in Al 2 ⁢O 3 resistive switching devices

Resistive random-access memories are promising for nonvolatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In this paper, we show that doping an oxide electrolyte, Al 2 ⁢O 3 , with electronegative metals makes resistive switching significantly more reproducible, surpassing the reproducibility requirements for obtaining reliable hardware neuromorphic circuits. Based on density functional theory calculations, the underlying mechanism is hypothesized to be the ease of creating oxygen vacancies in the vicinity of electronegative dopants due to the capture of the associated electrons by dopant midgap states and the weakening of Al-O bonds. These oxygen vacancies and vacancy clusters also bind significantly to the dopant, thereby serving as preferential sites and building blocks in the formation of conducting paths. Throughout this work, we validate this theory experimentally by implanting different dopants over a range of electronegativities in devices made of multiple alternating layers of Al 2 ⁢O 3 and WN and find superior repeatability and yield with highly electronegative metals, Au, Pt, and Pd. These devices also exhibit a gradual SET transition, enabling multibit switching that is desirable for analog computing.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Neutron and X-ray investigations of the Jahn–Teller switch in partially deuterated ammonium copper Tutton salt, (NH 4 ) 2 [Cu(H 2 O) 6 ](SO 4 ) 2

The structural phase transition accompanied by a Jahn–Teller switch has been studied over a range of H/D ratios in (NH 4 ) 2 [Cu(H 2 O) 6 ](SO 4 ) 2 (ACTS). In particular, single-crystal neutron diffraction investigations of crystals with deuteration in the range 50 to 82% are shown to be consistent with previous electron paramagnetic resonance (EPR) experiments exhibiting a phase boundary at 50% deuteration under ambient pressure. Polycrystalline samples show that the two phases can co-exist. In addition, single-crystal neutron and polycrystalline X-ray diffraction pressure experiments show a shift to lower pressure at 60% deuteration versus previous measurements at 100% deuteration.

deuterium isotope phase transition↗
DOE OSTI2024

High-temperature quantum valley Hall effect with quantized resistance and a topological switch

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Science & Technology - Other Topics↗