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At least 37 records · Page 2

Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.

degradation↗

Direct Mercury Detection in Landfill Leachate Using a Novel AuNP-Biopolymer Carbon Screen-Printed Electrode Sensor

A novel Au nanoparticle (AuNP)-biopolymer coated carbon screen-printed electrode (SPE) sensor was developed through the co-electrodeposition of Au and chitosan for mercury (Hg) ion detection. This new sensor showed successful Hg2+ detection in landfill leachate using square wave anodic stripping voltammetry (SWASV) with an optimized condition: a deposition potential of −0.6 V, deposition time of 200 s, amplitude of 25 mV, frequency of 60 Hz, and square wave step voltage of 4 mV. A noticeable peak was observed at +0.58 V associated with the stripping current of the Hg ion. The sensor exhibited a good sensitivity of ~0.09 μA/μg (~0.02 μA/nM) and a linear response over the concentration range of 10 to 100 ppb (50–500 nM). The limit of detection (LOD) was 1.69 ppb, which is significantly lower than the safety limit defined by the United States Environmental Protection Agency (USEPA). The sensor had an excellent selective response to Hg2+ in landfill leachate against other interfering cations (e.g., Zn2+, Pb2+, Cd2+, and Cu2+). Fifteen successive measurements with a stable peak current and a lower relative standard deviation (RSD = 5.1%) were recorded continuously using the AuNP-biopolymer-coated carbon SPE sensor, which showed excellent stability, sensitivity and reproducibility and consistent performance in detecting the Hg2+ ion. It also exhibited a good reliability and performance in measuring heavy metals in landfill leachate.

Hwang, Jae-Hoon (ORCID:0000000220100864)↗

Evaluation of phenolic antioxidant capacity in beverages based on laccase immobilized on screen-printed carbon electrode modified with graphene nanoplatelets and gold nanoparticles

A simple and highly sensitive electrochemical biosensor based on laccase immobilized onto a gold nanoparticles/graphene nanoplatelets-modified screen-printed carbon electrode (LACC/AuNP/GNPl/SPCE) was developed for the determination of hydroquinone (HQ) and other phenolic compounds. The biosensor shows excellent electro-catalytic activity towards oxidation of hydroquinone at a potential of -0.05 V (vs Ag/AgCl, 3 M KCl) in phosphate buffer as supporting electrolyte (0.1 M, pH 7.0) using hydrodynamic amperometry. Analytical characteristics uncover that the LACC/AuNP/GNPl/SPCE comprises a wide linear range for the dependence of the signal on HQ concentrations from 4 to 130 µM with a detection limit (3σ) of 1.5 µM. The repeatability (5 measurements, 100 µM hydroquinone) is ±2% and the reproducibility (5 biosensors, 100 µM hydroquinone) is ±3%. Interference studies of most common compounds with the determination of hydroquinone demonstrated negligible effects. Finally, the biosensor and the analytical method were applied to the determination of phenolic antioxidant capacity (AOC) in wine and blueberry syrup based on Trolox (6‑hydroxy‑2,5,7,8-tetramethylchromane-2-carboxylic acid) and hydroquinone equivalents. The results were evaluated by using their calibration curves which were satisfactory and agreed well with the results obtained by the reference method Trolox Equivalent Antioxidant Capacity assay (TEAC-Assay).

60 APPLIED LIFE SCIENCES↗

Screen printed interdigitated back contact solar cell

Interdigitated back contact solar cells are made by screen printing dopant materials onto the back surface of a semiconductor substrate in a pair of interdigitated patterns. These dopant materials are then diffused into the substrate to form junctions having configurations corresponding to these patterns. Contacts having configurations which match the patterns are then applied over the junctions.

Baraona, C. R.↗

Screen-Printed SHJ Solar Cells with Complex Silver Inks

Metallization using complex metal inks has gained significant research interest due to its cost-effectiveness and ability to achieve performance comparable to traditional nanoparticle pastes. This study introduces the use of complex silver (Ag) inks applied via industrial screen-printing for silicon heterojunction (SHJ) solar cell metallization. The printed Ag lines exhibit a contact resistivity on SHJ tin-doped indium oxide (ITO) surfaces as low as approximately 0.2-12 mO cm2. Photoluminescence imaging reveals minimal surface passivation degradation (iVoc < 3.5 mV), while scanning electron microscopy (SEM) shows a denser structure compared to Ag layer from nanoparticle pastes. The printed Ag grid features thin (approximately 1 micrometer), continuous fingers approximately 100-120 micrometer wide, significantly thinner than conventional approximately 20-30 micrometer fingers produced with nanoparticle-based pastes. Double printing achieves SHJ device efficiencies exceeding 20%, the highest reported for industrial solar cell precursors using this technology. These findings highlight the potential of complex Ag inks as a sustainable alternative to particle-based pastes, reducing Ag consumption and processing temperatures without compromising efficiency.

14 SOLAR ENERGY↗

Large-Scale Synthesis of Semiconducting Cu(In,Ga)Se2 Nanoparticles for Screen Printing Application

During the last few decades, the interest over chalcopyrite and related photovoltaics has been growing due the outstanding structural and electrical properties of the thin-film Cu(In,Ga)Se2 photoabsorber. More recently, thin film deposition through solution processing has gained increasing attention from the industry, due to the potential low-cost and high-throughput production. To this end, the elimination of the selenization procedure in the synthesis of Cu(In,Ga)Se2 nanoparticles with following dispersion into ink formulations for printing/coating deposition processes are of high relevance. However, most of the reported syntheses procedures give access to tetragonal chalcopyrite Cu(In,Ga)Se2 nanoparticles, whereas methods to obtain other structures are scarce. Herein, we report a large-scale synthesis of high-quality Cu(In,Ga)Se2 nanoparticles with wurtzite hexagonal structure, with sizes of 10–70 nm, wide absorption in visible to near-infrared regions, and [Cu]/[In + Ga] ≈ 0.8 and [Ga]/[Ga + In] ≈ 0.3 metal ratios. The inclusion of the synthesized NPs into a water-based ink formulation for screen printing deposition results in thin films with homogenous thickness of ≈4.5 µm, paving the way towards environmentally friendly roll-to-roll production of photovoltaic systems.

36 MATERIALS SCIENCE↗

Synthesis and characterization of high-T(sub c) screen-printed Y-Ba-Cu-O films on alumina

Thick films of YBa2Cu3O(sub 7-x) have been deposited on highly polished alumina substrates by the screen printing technique. To optimize the post-printing heat treatment, the films were baked at various temperatures for different lengths of time and oxygen-annealed at a lower temperature. The resulting films were characterized by electrical resistivity measurements, x-ray diffraction, and optical and scanning electron microscopy. Properties of the films were found to be highly sensitive to the post-printing thermal treatment. Films baked for 15 min at 1000 C in oxygen were hard, adherent, near single phase, and superconducting with T(sub c)(onset) approx 96 K, T(sub c)(zero) approx 66 K and Delta T sub c (10 to 90 percent) approx 10 K.

Bansal, Narottam P.↗

Synthesis and characterization of high-T(c) screen-printed Y-Ba-Cu-O films on alumina

Thick films of YBa2Cu3O(sub 7-x) have been deposited on highly polished alumina substrates by the screen printing technique. To optimize the post-printing heat treatment, the films were baked at various temperatures for different lengths of time and oxygen-annealed at a lower temperature. The resulting films were characterized by electrical resistivity measurements, X-ray diffraction, and optical and scanning electron microscopy. Properties of the films were found to be highly sensitive to the post-printing thermal treatment. Films baked for 15 min at 1000 C in oxygen were hard, adherent, near single phase, and superconducting with T(sub c) (onset) approx 96 KK, T(sub c) (zero) approx 66 K and Delta T sub c (10 to 90 percent) approx 10 K.

Bansal, Narottam P.↗

High Tc screen-printed YBa2Cu3O(7-x) films - Effect of the substrate material

Thick films of YBa2Cu3O(7-x) have been deposited on highly polished alumina, magnesia spinel, nickel aluminum titanate (Ni-Al-Ti), and barium tetratitanate (Ba-Ti) substrates by the screen printing technique. Properties of the films were found to be highly sensitive to the choice of the substrate material. The film on Ba-Ti turned green after firing, due to a reaction with the substrate and were insulating. A film on Ni-Al-Ti had a Tc (onset) of about 95 K and lost 90 percent of its resistance by about 75 K. However, even at 4 K it was not fully superconducting, possibly due to a reaction between the film and the substrate and interdiffusion of the reaction products. The film on alumina had Tc (onset) of about 96 K, Tc (zero) of about 66 K, and Delta Tc of about 10 K. The best film was obtained on spinel and had Tc (onset) of about 94 K, zero resistance at 81 K, and a transition width of about 7 K.

Bansal, Narottam P.↗

Development of Low-Cost, Crack-Tolerant Metallization Using Screen Printing

One of the ways to reduce the cost of solar electricity to 3/kWh, thus reaching parity with fossil-fuel-based generation, is to reduce the degradation rate of solar modules and extend their lifetime well beyond 30 years. The extended module lifetime in turn can positively influence the financial model and the bankability of utility-scale PV projects. Today, the highest-riskpriority solar module degradation mechanism is what is known as hot spots, often induced by cell cracks. In order to address this degradation mechanism, we make use of low-cost, multi-walled carbon nanotubes embedded in commercial screen-printable silver pastes. When the carbon nanotubes are properly functionalized and appropriately incorporated into commercial silver pastes, the resulting metal contacts on solar cells, after screen-printing and firing, show exceptional fracture toughness. These composite metal contacts possess increased ductility, electrical gap-bridging capability up to 50 um, and 'self-healing' to regain electrical continuity even after cycles of complete electrical failure under extreme strain.

14 SOLAR ENERGY↗

Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation

The efficiency potential of double-side tunnel oxide passivated contact (DS-TOPCon) solar cells is limited by parasitic absorption in the front poly-Si layer, despite excellent passivation and high V OC . The use of patterned poly-Si only under the front metal grid lines can significantly reduce the parasitic absorption loss without sacrificing voltage. In this work, we demonstrate a simple, manufacturing-friendly method of patterning the front poly-Si using a nanosecond UV (355 nm) laser. We found that with laser powers ≥3 W at a 400 mm/s scan speed, an estimated 1–4 nm thick stoichiometric SiO 2 layer was grown on TOPCon. This served as a mask for KOH-etching of 200 nm poly-Si, allowing for patterning of poly-Si fingers required for selective TOPCon. While laser powers above 3 W caused substantial deterioration in passivation quality, the resulting damage in J 0 was largely recovered by subsequent PECVD SiN x deposition. At 3 W, the full area J 0 was found to be 36.8 fA·cm –2 . Furthermore, this translates to 1.68 fA·cm –2 for 4.48% coverage from the wing area of the polyfinger lines (100 lines–100 μm wide and 30 μm metal) contributing to a total front J 0 of ~10 fA·cm –2 , well suited for 25% efficient solar cells

42 ENGINEERING↗

Investigation of Local Parameters of PERC Solar Cells Metallized with Screen Printed Cu-Paste

For 40 TW of PV required to transition our planet to 100% renewables, the silver (Ag) should disappear from PV production. Advantages of copper (Cu) over silver (Ag) include: 1) bulk Cu has a similar conductivity to Ag (1.7 one millionth O-cm for Cu, 1.6 one millionth O-cm for Ag, and 2) Cu is -100 times cheaper than Ag, making it an excellent potential replacement. Problems associated with copper contacts include: 1) easy oxidation, and 2) diffusion into the Si cell and recombination activity. To summarize: 1) Rs map shows some regions with very high Rs, indicating no contact in those areas; 2) the histogram shows the peak Rs -5 ohm.cm2, which explains the high FF loss due to Rs; and 3) DLIT indicates non-uniformity in J01 and J02.

copper↗

Quantitative Understanding and Implementation of Screen Printed p+ Poly-Si/Oxide Passivated Contact to Enhance the Efficiency of p-PERC Cells

This paper reports on the modeling, optimization and implementation of p-TOPCon (tunnel oxide passivated contacts) on the rear side of a PERC to enhance its efficiency. Local Al-BSF of a traditional PERC was replaced by p+ polySi/oxide passivated contact composed of ~15Å thick chemically grown tunnel oxide, capped with 120-250nm thick p+ poly-Si layer grown by LPCVD. Process optimization resulted in full area unmetallized saturated current density (Jo) of ~ 5fA/cm2 for planar surface, nearly independent of poly-Si thickness in the range. Metallized J0 showed an increase with decreased poly-Si thickness and was found to be 9.6 and ~25fA/cm2 for 250nm and 120 nm polySi, respectively, with 4.6% direct metal-Si contact fraction, suitable for bifacial cells. A 21.4% efficient baseline PERC cell with local BSF was fabricated and analyzed to extract the rear side saturation current density (J0b’) of 66fA/cm2. Model calculations showed that by replacing this local BSF with 250nm TopCon developed in the study showed some Voc enhancement of 7mV, consistent with the observed Voc increase of 10mV. Model calculations also reveal that a more advanced LBSF PERC with better bulk lifetime and emitter saturation current density can extends its potential gain up to 0.4% in cell efficiency from the integration of p-TOPCon.

14 SOLAR ENERGY↗

Quantitative Understanding and Implementation of Screen-printed p+ Poly-Si/Oxide Passivated Contact to Enhance the Efficiency of p-PERC Cells

Investigate the passivation quality of p-TOPCon to evaluate the promise and viability of upgraded p-PERC with p-TOPCon back. Model and simulate the p-PERC and p-TOPCon cells to predict the gain in cell efficiency by implementation of the p-TOPCon Develop a simple process sequence and fabricate p-TOPCon-PERC cell with ≥ 21.0% efficiency

p-TOPCon, P-PERC↗

Development of ~25% Efficient Double Side Screen Printed Poly-Si/SiO x Passivated Contact Solar Cells

This program aims to overcome these challenges and develop high-efficiency (24-25%) double-side (DS) TOPCon solar cells by maximizing passivation on both sides while mitigating light absorption losses. To achieve this, the program will implement either thin (≤ 20 nm) homogeneous n-TOPCon on the entire front surface or selective area thick (≥ 100 nm) n-TOPCon only underneath the front metal contact with ~90% field region composed of dielectric passivated textured n-Si in between the poly-Si/metal grid. The rear side will feature ~250 nm-thick full-area planar p-TOPCon, which functions as the rear junction. Recombination and parasitic absorption losses in the front and rear TOPCon layers will be minimized by tailoring their doping profiles and thickness. Additionally, the device performance will be further enhanced through the optimization of bulk parameters, including the carrier lifetime, resistivity, and thickness of the n-type Si absorber. Finally, advanced metallization techniques, such as fine-line printing, and floating busbar or busbar-less designs, will be employed to reduce recombination, resistive, and optical losses. The program started with the development of a technology roadmap for DS-TOPCon cells to achieve target efficiency.

14 SOLAR ENERGY↗

Mod silver metallization: Screen printing and ink-jet printing

Basic material efforts have proven to be very successful. Adherent and conductive films were achieved. A silver neodecanoate/bismuth 2-ethylhexanoate mixture has given the best results in both single and double layer applications. Another effort is continuing to examine the feasibility of applying metallo-organic deposition films by use of an ink jet printer. Direct line writing would result in a saving of process time and materials. So far, some well defined lines have been printed.

Vest, R. W.↗