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Results for “Semiconductor device fabrication”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Better Ohmic Contacts For InP Semiconductor Devices

Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

Weizer, Victor G.↗
NASA NTRS1978

Effects of ultrathin oxides in conducting MIS structures on GaAs

Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

Childs, R. B.↗
NASA NTRS1978

Vapor phase growth technique of III-V compounds utilizing a preheating step

In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

Olsen, Gregory Hammond↗
NASA NTRS1995

Method for fabricating an interconnected array of semiconductor devices

A method of forming an array of interconnected solar cells. A flexible substrate carrying semiconductor and conductive layers is divided into individual devices by slitting the substrate along the web length. The individual devices are then connected with one another in series by laminating the substrate onto an insulating backing and by depositing conducting interconnection layers which join the lower conductor of one device with the top conductor of the adjoining device.

Grimmer, Derrick P.↗
NASA NTRS2009

Linear Actuator Has Long Stroke and High Resolution

The term precision linear actuator, direct drive ( PLADD ) refers to a robust linear actuator designed to be capable of repeatedly performing, over a lifetime of the order of 5 to 10 years, positioning maneuvers that include, variously, submicron increments or slews of the order of a centimeter. The PLADD is capable of both long stroke (120 mm) and high resolution (repeatable increments of 20 nm). Unlike precise linear actuators of prior design, the PLADD contains no gears, levers, or hydraulic converters. The PLADD, now at the prototype stage of development, is intended for original use as a coarse-positioning actuator in a spaceborne interferometer. The PLADD could also be adapted to terrestrial applications in which there are requirements for long stroke and high resolution: potential applications include medical imaging and fabrication of semiconductor devices. The PLADD (see figure) includes a commercially available ball-screw actuator driven directly by a commercially available three-phase brushless DC motor. The ball-screw actuator comprises a spring-preloaded ball nut on a ball screw that is restrained against rotation as described below. The motor is coupled directly (that is, without an intervening gear train) to a drive link that, in turn, is coupled to the ball nut. By eliminating the gear train, the direct-drive design eliminates the complexity, backlash, and potential for misalignment associated with a gear train. To prevent inadvertent movement, there is a brake that includes flexured levers compressed against the drive link by preload springs. This is a power-off brake: There are also piezoelectric stacks that can be activated to oppose the springs and push the levers away from the drive link. Hence, power must be applied to the piezoelectric stacks to release the drive link from braking. To help ensure long operational life, all of the mechanical drive components are immersed in an oil bath within hermetically sealed bellows. The outer end of the bellows holds the outer end of the ball screw, thereby preventing rotation of the ball screw. Positioning is controlled by an electronic control system that includes digital and analog subsystems that interact with the motor and brake and with two sensor/encoder units: a Hall-effect-sensor rotation encoder and a linear glass-scale encoder. This system implements a proportional + integral + derivative control algorithm that results in variation of voltage commands to each of the three pairs of windings of the brushless DC motor. In one of two alternative control modes, the voltages are applied to the windings in a trapezoidal commutation scheme on the basis of timing signals obtained from the Hall-effect sensors; this scheme yields relatively coarse positioning - 24 steps per motor revolution. The second control mode involves a sinusoidal commutation scheme in which the output of the linear glass-scale encoder is transposed to rotational increments to yield much finer position feedback - more than 400,000 steps per revolution.

Cook, Brant T.↗
NASA NTRS2009

NASA Tech Briefs, July 2009

Topics covered include: Dual Cryogenic Capacitive Density Sensor; Hail Monitor Sensor; Miniature Six-Axis Load Sensor for Robotic Fingertip; Improved Blackbody Temperature Sensors for a Vacuum Furnace; Wrap-Around Out-the-Window Sensor Fusion System; Wide-Range Temperature Sensors with High-Level Pulse Train Output; Terminal Descent Sensor Simulation; A Robust Mechanical Sensing System for Unmanned Sea Surface Vehicles; Additive for Low-Temperature Operation of Li-(CF)n Cells; Li/CFx Cells Optimized for Low-Temperature Operation; Number Codes Readable by Magnetic-Field-Response Recorders; Determining Locations by Use of Networks of Passive Beacons; Superconducting Hot-Electron Submillimeter-Wave Detector; Large-Aperture Membrane Active Phased-Array Antennas; Optical Injection Locking of a VCSEL in an OEO; Measuring Multiple Resistances Using Single-Point Excitation; Improved-Bandwidth Transimpedance Amplifier; Inter-Symbol Guard Time for Synchronizing Optical PPM; Novel Materials Containing Single-Wall Carbon Nanotubes Wrapped in Polymer Molecules; Light-Curing Adhesive Repair Tapes; Thin-Film Solid Oxide Fuel Cells; Zinc Alloys for the Fabrication of Semiconductor Devices; Small, Lightweight, Collapsible Glove Box; Radial Halbach Magnetic Bearings; Aerial Deployment and Inflation System for Mars Helium Balloons; Steel Primer Chamber Assemblies for Dual Initiated Pyrovalves; Voice Coil Percussive Mechanism Concept for Hammer Drill; Inherently Ducted Propfans and Bi-Props; Silicon Nanowire Growth at Chosen Positions and Orientations; Detecting Airborne Mercury by Use of Gold Nanowires; Detecting Airborne Mercury by Use of Palladium Chloride; Micro Electron MicroProbe and Sample Analyzer; Nanowire Electron Scattering Spectroscopy; Electron-Spin Filters Would Offer Spin Polarization Greater than 1; Subcritical-Water Extraction of Organics from Solid Matrices; A Model for Predicting Thermoelectric Properties of Bi2Te3; Integrated Miniature Arrays of Optical Biomolecule Detectors; A Software Rejuvenation Framework for Distributed Computing; Kurtosis Approach to Solution of a Nonlinear ICA Problem; Robust Software Architecture for Robots; R4SA for Controlling Robots; Bio-Inspired Neural Model for Learning Dynamic Models; Evolutionary Computing Methods for Spectral Retrieval; Monitoring Disasters by Use of Instrumented Robotic Aircraft; Complexity for Survival of Living Systems; Using Drained Spacecraft Propellant Tanks for Habitation; Connecting Node; and Electrolytes for Low-Temperature Operation of Li-CFx Cells.

Source record↗
NASA NTRS1990

Method of fabricating germanium and gallium arsenide devices

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Jhabvala, Murzban↗
NASA NTRS2005

Improved Method of Manufacturing SiC Devices

The phrase, "common-layered architecture for semiconductor silicon carbide" ("CLASSiC") denotes a method of batch fabrication of microelectromechanical and semiconductor devices from bulk silicon carbide. CLASSiC is the latest in a series of related methods developed in recent years in continuing efforts to standardize SiC-fabrication processes. CLASSiC encompasses both institutional and technological innovations that can be exploited separately or in combination to make the manufacture of SiC devices more economical. Examples of such devices are piezoresistive pressure sensors, strain gauges, vibration sensors, and turbulence-intensity sensors for use in harsh environments (e.g., high-temperature, high-pressure, corrosive atmospheres). The institutional innovation is to manufacture devices for different customers (individuals, companies, and/or other entities) simultaneously in the same batch. This innovation is based on utilization of the capability for fabrication, on the same substrate, of multiple SiC devices having different functionalities (see figure). Multiple customers can purchase shares of the area on the same substrate, each customer s share being apportioned according to the customer s production-volume requirement. This makes it possible for multiple customers to share costs in a common foundry, so that the capital equipment cost per customer in the inherently low-volume SiC-product market can be reduced significantly. One of the technological innovations is a five-mask process that is based on an established set of process design rules. The rules provide for standardization of the fabrication process, yet are flexible enough to enable multiple customers to lay out masks for their portions of the SiC substrate to provide for simultaneous batch fabrication of their various devices. In a related prior method, denoted multi-user fabrication in silicon carbide (MUSiC), the fabrication process is based largely on surface micromachining of poly SiC. However, in MUSiC one cannot exploit the superior sensing, thermomechanical, and electrical properties of single-crystal 6H-SiC or 4H-SiC. As a complement to MUSiC, the CLASSiC five-mask process can be utilized to fabricate multiple devices in bulk single-crystal SiC of any polytype. The five-mask process makes fabrication less complex because it eliminates the need for large-area deposition and removal of sacrificial material. Other innovations in CLASSiC pertain to selective etching of indium tin oxide and aluminum in connection with multilayer metallization. One major characteristic of bulk micromachined microelectromechanical devices is the presence of three-dimensional (3D) structures. Any 3D recesses that already exist at a given step in a fabrication process usually make it difficult to apply a planar coat of photoresist for metallization and other subsequent process steps. To overcome this difficulty, the CLASSiC process includes a reversal of part of the conventional flow: Metallization is performed before the recesses are etched.

Okojie, Robert S.↗
NASA NTRS2006

Selective Plasma Deposition of Fluorocarbon Films on SAMs

A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.

Crain, Mark M., III↗
NASA NTRS1985

Investigation of semiconductor clad optical waveguides

A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.

Batchman, T. E.↗
NASA NTRS1995

The Fundamentals of Using the Digital Micromirror Device (DMD(TM)) for Projection Display

Developed by Texas Instruments (TI) the digital micromirror device (DMD(tm)) is a quickly emerging and highly useful micro-electro-mechanical structures (MEMS) device. Using standard semiconductor fabrication technology, the DMD's simplicity in concept and design will provide advantageous solutions for many different applications. At the rudimentary level, the DMD is a precision, semiconductor light switch. In the initial commercial development of DMD technology, TI has concentrated on projection display and hardcopy. This paper will focus on how the DMD is used for projection display. Other application areas are being explored and evaluated to find appropriate and beneficial uses for the DMD.

Yoder, Lars A.↗
NASA NTRS1996

Porous silicon carbide (SIC) semiconductor device

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Shor, Joseph S.↗
NASA NTRS2013

Dual ohmic contact to N- and P-type silicon carbide

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Okojie, Robert S.↗
NASA NTRS2000

Method For Growth of Crystal Surfaces and Growth of Heteroepitaxial Single Crystal Films Thereon

A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon is discussed. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).

Powell, J. Anthony↗