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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

A CCD scanned (Hg, Cd)Te array for earth viewing applications

A 9 channel demonstration of 10 micrometer photoconductive mercury cadmium telluride detector array, bipolar preamplifiers, and a Si CCD multiplexer, integrated into a focal plane assembly and operating at 105 K and at 17 Hz is reported. The result of a direct coupling experiment between a 5-micrometer photovoltaic mercury cadmium telluride photodiode and a CCD is revealed. No appreciable degradation in the signal-to-noise ratio was experienced.

Iwasa, S.↗
NASA NTRS2020

Development of Global Operational Snow Analysis at the US Air Force 557th Weather Wing

The outdated SNODEP snow depth retrieval algorithm is replaced by the Foster et al. (1997; 2005) approach, which considers the effects of variations in forest cover. The simple blending algorithm (IDW) is replaced by the Bratseth scheme, a successive correction algorithm that converges to the solution provided by Optimal Interpolation (OI). Outdated quality control datasets are updated and quality control algorithms are reorganized to ensure the performance of the snow analysis. The spatial resolution of snow and ice estimates are increased from 25-km to 10-km.USAF-SI are fully integrated into the global operational land analysis configuration at the USAF 557th WW.

Yoon, Yeosang↗
NASA NTRS2007

An Overview of Integration and Test of the James Webb Space Telescope Integrated Science Instrument Module

The James Webb Space Telescope (JWST) is a 6.6m diameter, segmented, deployable telescope for cryogenic IR space astronomy (approx.40K). The JWST Observatory architecture includes the Optical Telescope Element (OTE) and the Integrated Science Instrument Module (ISIM) element that contains four science instruments (SI) including a Guider. The SIs and Guider are mounted to a composite metering structure with outer dimensions of 2.1x2.2x1.9m. The SI and Guider units are integrated to the ISIM structure and optically tested at NASA/Goddard Space Flight Center as an instrument suite using a high-fidelity, cryogenic JWST telescope simulator that features a 1.5m diameter powered mirror. The SIs are integrated and aligned to the structure under ambient, clean room conditions. SI performance, including focus, pupil shear and wavefront error, is evaluated at the operating temperature. We present an overview of the ISIM integration within the context of Observatory-level construction. We describe the integration and verification plan for the ISIM element, including an overview of our incremental verification approach, ambient mechanical integration and test plans and optical alignment and cryogenic test plans. We describe key ground support equipment and facilities.

Drury, Michael↗
NASA NTRS2016

Optical Testing and Verification Methods for the James Webb Space Telescope Integrated Science Instrument Module Element

NASA's James Webb Space Telescope (JWST) is a 6.6m diameter, segmented, deployable telescope for cryogenic IR space astronomy (~40K). The JWST Observatory includes the Optical Telescope Element (OTE) and the Integrated Science Instrument Module (ISIM) that contains four science instruments (SI) and the fine guider. The SIs are mounted to a composite metering structure. The SI and guider units were integrated to the ISIM structure and optically tested at the NASA Goddard Space Flight Center as a suite using the Optical Telescope Element SIMulator (OSIM). OSIM is a full field, cryogenic JWST telescope simulator. SI performance, including alignment and wave front error, were evaluated using OSIM. We describe test and analysis methods for optical performance verification of the ISIM Element, with an emphasis on the processes used to plan and execute the test. The complexity of ISIM and OSIM drove us to develop a software tool for test planning that allows for configuration control of observations, associated scripts, and management of hardware and software limits and constraints, as well as tools for rapid data evaluation, and flexible re-planning in response to the unexpected. As examples of our test and analysis approach, we discuss how factors such as the ground test thermal environment are compensated in alignment. We describe how these innovative methods for test planning and execution and post-test analysis were instrumental in the verification program for the ISIM element, with enough information to allow the reader to consider these innovations and lessons learned in this successful effort in their future testing for other programs.

spaceborne telescopes↗
NASA NTRS2016

Jwst from Below: An Overview of the Construction of the James Webb Space Telescope, Interesting Metrology, and Cryogenic-Vacuum Testing

NASA's James Webb Space Telescope (JWST) is a 6.6m diameter, segmented, deployable telescope for cryogenic IR space astronomy (40K). The JWST Observatory includes the Optical Telescope Element (OTE) and the Integrated Science Instrument Module (ISIM) that contains four science instruments (SI) and the guider. The SIs are mounted to a composite metering structure. The SI and guider units are integrated to the ISIM structure and optically tested at NASA Goddard Space Flight Center as a suite using a telescope simulator (Optical Telescope Element SIMulator; OSIM). OSIM is a full field, cryogenic JWST telescope simulator. SI performance, including alignment and wavefront error, is evaluated using OSIM. This is an overview presentation to undergraduate students and other personnel at the University of Richmond, planned for 12 Oct, 2016. It uses material previously released by NASA on the Internet (e.g., via Flickr) or at engineering conferences (e.g., SPIE). This presentation provides an overview of the status of the project, with an emphasis on optics and measurement.

instrument development↗
NASA NTRS2008

Recent Developments in the Alignment and Test Plans for the James Webb Space Telescope Integrated Science Instrument Module

The James Webb Space Telescope (JWST) is a 6.6m diameter, segmented, deployable telescope for cryogenic IR space astronomy (approximately 40K). The JWST Observatory architecture includes the Optical Telescope Element (OTE) and the Integrated Science Instrument Module (ISIM) element that contains four science instruments (SI) including a Guider. The SIs and Guider are mounted to a composite metering structure with outer dimensions of 2.1 x 2.2 x 1.9m. The SI and Guider units are integrated to the ISIM structure and optically tested at NASA/Goddard Space Flight Center as an instrument suite using an OTE SIMulator (OSIM). OSIM is a high-fidelity, cryogenic JWST telescope simulator that features a approximately 1.5m diameter powered mirror. The SIs are aligned to the structure's coordinate system under ambient, clean room conditions using laser tracker and theodolite metrology. Temperature-induced mechanical SI alignment and structural changes are measured using a photogrammetric measurement system at ambient and cryogenic temperatures. OSIM is aligned to the ISIM mechanical coordinate system at the cryogenic operating temperature via internal mechanisms and feedback from alignment sensors in six degrees of freedom. SI performance, including focus, pupil shear and wavefront error, is evaluated at the operating temperature using OSIM. We present an updated plan for the assembly and ambient and cryogenic optical alignment, test and verification of the ISIM element.

Ohl, Raymond↗
NASA NTRS1994

Highly ionized gas in the Galactic disk: The l = 295 deg, b,= 0 deg interarm direction

I present new high-resolution measurements of ultraviolet interstellar absorption lines toward three distant stars in the Galactic disk in the general direction l = 295 deg, b = 0 deg. The high ionization lines of Si IV and C IV toward HD 100276, HD 103779, and HD 104705 show substantial variations on angular scales of less than 1 deg, or about 50-100 pc at the distance of the stars. The Si IV and C IV midplane densities derived for HD 100276 and HD 103779 are N(sub o) (Si IV) approximately = 1.3 x 10(exp -9) cm(exp -3) and n(sub o)(C IV) approximately = 4.5 x 10(exp -9) cvm(exp -3), approximately a factor of 2-3 lower than the Galactic averages. Toward HD 104705, the Si IV midplane density is near the average value, but the C IV midplane density is a factor of 3 higher than average. The integrated C IV and Si IV ratios along the HD 100276 and HD 100379 sight lines are similar to the N(C IV)/N(Si IV) = 3.6 +/- 1.3 ratio for a sample of halo stars. For the HD 104705 sight line, N(C IV)/N(Si IV) = 11 and N(C IV)/N(N V) greater than 10. Turbulent mixing layers provide a possible source for the observed absorption along the three sight lines as does gas associated with cooling flows. If mixing layers are the primary source of the absorption along the disk sight lines, then the entrainment velocity of the hot gas is approximately 100 km/s and the post mixed gas temperature is approximately 2 x 10(exp 5) K; same differences may exist for these mixing layers compared to those inferred for gas toward the Galactic poles. Current models of cooling, hot gas in supernova remnants, and magnetized conduction fronts do not accurately describe the high ion properties toward the disk stars in this study.

Sembach, Kenneth R.↗
NASA NTRS1991

Ultraviolet interstellar absorption toward HD 156359, a halo star at 11 kiloparsecs in the direction l = 329 deg and b = -15 deg

Results based on high-quality multiple IUE high-dispersion spectra are presented for the HD 156359 sight line in the direction l = 328.7 deg and b = -14.5 deg. The UV stellar spectrum of HD 156359 is consistent with an MK classification of O9.7 Ib-II. The high-ionization UV interstellar absorption line in the star's UV spectrum are very broad with negative velocity extensions. Comparison of apparent column density profiles Na(v) for lines within each doublet indicates that there is no significant unresolved saturated structure in the Si IV or N V profiles. Direct integration of the Na(v) profiles for Si IV, C IV, and N V over velocities from -150 km/s to +40 km/s yields total column densities of log N = 14.10, 14.77, and 14.09, respectively. The definite detection of N V absorption lines with profile shapes similar to the Si IV and C IV profiles favors a common origin for all three species.

Sembach, Kenneth R.↗
NASA NTRS2005

Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power

A collaborative research effort at MIT, Ohio State University and NASA has resulted in the demonstration of record quality gallium arsenide (GaAs) based single junction photovoltaic devices on silicon (Si) substrates. The ability to integrate highly efficient, radiation hard III-V based devices on silicon offers the potential for dramatic reductions in cell mass (approx.2x) and increases in cell area. Both of these improvements offer the potential for dramatic reductions in the cost of on-orbit electrical power. Recently, lattice matched InGaP/GaAs and metamorphic InGaP/InGaAs dual junction solar cells were demonstrated by MBE and OMVPE, respectively. Single junction GaAs on Si devices have been integrated into a space flight experiment (MISSES), scheduled to be launched to the International Space Station in March of 2005. I-V performance data from the GaAs/Si will be collected on-orbit and telemetered to ground stations daily. Microcracks in the GaAs epitaxial material, generated because of differences in the thermal expansion coefficient between GaAs and Si, are of concern in the widely varying thermal environment encountered in low Earth orbit. Ground based thermal life cycling (-80 C to + 80 C) equivalent to 1 year in LEO has been conducted on GaAs/Si devices with no discernable degradation in device performance, suggesting that microcracks may not limit the ability to field GaAs/Si in harsh thermal environments. Recent advances in the development and testing of III-V photovoltaic devices on Si will be presented.

Wilt, David M.↗
NASA NTRS2001

Coupling Between Finite Ground Coplanar Waveguides Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/mm-wave integrated circuits on low resistivity Si wafers. However, the closely spaced transmission lines are susceptible to high levels of cross-coupling, which degrades the overall circuit performance. In this paper, theoretical and experimental results on coupling of Finite Ground Coplanar (FGC) waveguides embedded in polyimide layers are presented for the first time. These results show that FGC lines have approximately 8 dB lower coupling than coupled Coplanar Waveguides. Furthermore, it is shown that the forward and backward coupling characteristics for FGC lines do not resemble the coupling characteristics of other transmission lines such as microstrip.

Ponchak, George E.↗
NASA NTRS2007

Toward a III-V Multijunction Space Cell Technology on Si

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Ringel, S. A.↗
NASA NTRS1997

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Ponchak, George E.↗
NASA NTRS2000

High-Q X-Band and K-Band Micromachined Spiral Inductors for Use in Si-Based ICs

A micromachined structure with reduced parasitics is proposed to enhance the resonant frequency and the quality factor (Q) of a spiral inductor. Inductors with various etch depths have been fabricated on a high resistivity Si substrate. Two-port S-parameters measurement is taken to characterize the performance of the inductors. With an etch depth of 20 micron, a fabricated 1.8 nH spiral inductor achieves a maximum resonant frequency of 25.6 GHz and a maximum Q of 20.2 at 14.5 GHz. This technology is compatible with SiGe/Si HBT technology, and the spiral inductors are especially suitable for Si-based monolithic microwave integrated circuit (MMIC) applications.

Lu, Liang-Hung↗
NASA NTRS2010

Pupil Alignment Measuring Technique and Alignment Reference for Instruments or Optical Systems

A technique was created to measure the pupil alignment of instruments in situ by measuring calibrated pupil alignment references (PARs) in instruments. The PAR can also be measured using an alignment telescope or an imaging system. PAR allows the verification of the science instrument (SI) pupil alignment at the integrated science instrument module (ISIM) level of assembly at ambient and cryogenic operating temperature. This will allow verification of the ISIM+SI alignment, and provide feedback to realign the SI if necessary.

Hagopian, John G.↗
NASA NTRS2001

Coupling Between Microstrip Lines Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/millimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented.

Ponchak, George E.↗
NASA NTRS1994

Highly ionized gas absorption in the disk and halo toward HD 167756 at 3.5 kilometers per second resolution

High-resolution spectra of interstellar Si IV, C IV, and N V absorption lines along the 4 kpc path to the inner Galaxy star HD 167756 at z = -0.85 kpc are presented. The spectra were obtained with the echelle mode of Goddard High Resolution Spectrograph (GHRS) aboard the Hubble Space Telescope (HST) and have signal-to-noise ratios ranging from 23 to 38. The high resolution of the measurements full width at half maximum (FWHM = 3.5 km/s) results in fully resolved line profiles for the highly ionized gas absorption. The measurements provide information on the column density per unit velocity, N(v), as a function of velocity for Si IV, C IV, and N V. The C IV and N V profiles extend from -70 to +70 km/s, while the Si IV profiles extend from -40 to +70 km/s. The integrated logarithmic column densities are long N(Si IV) = 13.09 +/- 0.02, log N(C IV) = 13.83 +/- 0.02, and log N(N V) = 13.56 +/- 0.03. The N V profile is broad, asymmetric, and featureless, while the Si IV profile contains narrow absorption components near V(sub LSR) = -19, 0, +20, and +52 km/s with Doppler spread parameters, b about = 10-12 km/s. The C IV profile contains both broad and narrow structure. The high ion feature near +52 km/s is also detected in the low-ionization lines of Ca II, O I, Si II, and Fe II. The other narrow Si IV and C IV components occur within several km/s of components seen in low-ionization species. The sight line contains at least two types of highly ionized gas. One type gives rise to a broad N V profile, and the other results in the more structured Si IV profile. The C IV profile contains contributions from both types of highly ionized gas. The broad but asymmetric N V profile is well represented by a large Galactic scale height gas which is participating in Galactic rotation and has a combination of thermal and turbulent broadening with b(sub tot) about = 42 km/s. The C IV to N V abundance ratio of 1.0 +/- 0.3 for the gas implies T about 1.6 x 10(exp 5) K or about 8 x 10(exp 5) K if the gas is in collisional ionization equilibrium and has a solar carbon to nitrogen abundance ratio. This absorption may be associated with cooling hot gas situated in Galactic shells and supershells along the sight line. The gas producing the narrow Si IV and C IV absorption components has line widths that are compatible with origins in conductive interfaces between the warm and hot interstellar medium. Kinematic flows associated with the photoionized edges of clouds might also produce Si IV and C IV lines with Doppler spread parameters similar to those observed, but the C IV to Si IV ratio in this gas is 3.5, which leads us to favor the conductive interface interpretation.

Savage, Blair D.↗
NASA NTRS2001

Coupling between Microstrip Lines Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing SilSiGe monolithic microwavdmillimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented. A discussion of the electric and magnetic field distributions for the coupled microstrip lines is presented to provide a physical rationale for the presented results.

Ponchak, George E.↗