NASA NTRS · 20010058890
Coupling Between Microstrip Lines Embedded in Polyimide Layers for 3D-MMICs on Si
Abstract
Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/millimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented.
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Ponchak, George E., Tentzeris, Emmanouil M., Papapolymerou, John. 2001-01-01. Coupling Between Microstrip Lines Embedded in Polyimide Layers for 3D-MMICs on Si. https://ntrs.nasa.gov/citations/20010058890
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