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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

In situ high-temperature 3D imaging of the damage evolution in a SiC nuclear fuel cladding material

Silicon carbide (SiC)-based nuclear fission fuel rod cladding has been considered as one of the possible designs for accident tolerant fuels. It is in the form of a SiC fibre reinforced SiC matrix composite tube (SiC f -SiC m ) with monolithic SiC outer and/or inner coating layers. This study focuses on the deformation and fracture processes in this material using in situ X-ray micro-computed tomography (XCT) at room temperature (RT) and 1200 °C in an inert gas environment in a C-ring compression loading configuration. Prior to testing, local properties and residual stresses were characterised using nanoindentation and Raman spectroscopy since they can impact the mechanical behaviour of the material. The 3D strain distribution, crack formation and propagation processes including the toughening mechanisms (e.g., crack deflection, micro-cracking, crack bridging and bifurcation) are investigated in the coating and underlying composites at RT and 1200 °C. There is no particular sequence which toughening mechanism occurs first – this is very different from the conventional toughening theory in ceramic-matrix composites under uniaxial tension loading. Indeed, no evidence of fibre pull-out or fibre fracture was observed in this SiC f -SiC m nuclear cladding material in the current C-ring compression configuration. The correlation between local measurements and bulk mechanical behaviour are discussed.

3D imaging↗
DOE OSTI2023

Phonon-assisted optical absorption of SiC polytypes from first principles

Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have existed for more than 50 years, theoretical investigations of phonon-assisted absorption have been hampered by their excessive computational cost. Here, in this work, we calculate the phonon-assisted temperature-dependent optical absorption spectra of the commonly occurring SiC polytypes (3C, 2H, 4H, 6H, and 15R), using first-principles approaches based on density functional theory and related techniques. We show that our results agree with experimentally determined absorption coefficients in the spectral region between the direct and indirect band gaps. The temperature dependence of the spectra can be well predicted with taking the temperature dependence of the band gaps into account. Lastly, we compare the spectra obtained with second-order perturbation theory to those determined by the special displacement method and we show that the full consideration of the electronic energy renormalization due to temperature is important to further improve the prediction of the phonon-assisted absorption in SiC. Our insights can be applied to predict the optical spectra of the less common SiC polytypes and other indirect-gap semiconductors in general.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Highly Integrated Wide Bandgap Power Module for Next Generation Plug-In Vehicles (Final Report)

Wide bandgap devices are key enablers for high power density traction inverters. A highly integrated wide bandgap (WBG) power module enables higher temperature operation, higher inverter efficiency and overall smaller die area with the same power delivery. However, it requires careful design of the power module to take advantage of all the superior material properties that silicon carbide (SiC) provides over conventional silicon (Si) Insulated Gate Bipolar Transistor (IGBT) based design. This project developed an efficient and densely packed SiC power module for an automotive traction inverter application. Extensive study was performed to select the best performing SiC die considering a wide range of temperature variation, suitability to integrate into target packaging, robust body diode performance and overall high electrical efficiency. Multiple design ideas were explored to achieve lower stray inductance for both power loop and signal loop, uniform current distribution, compact form factor, and very high thermal performance. The final power module package includes all six inverter switches in the same module (six-pack) with die sintered at both bottom and top surfaces utilizing high performance substrate to achieve high electrical and thermal performance. Two power module variants were developed using 900 V and 1200 V devices for operating at two different high voltage levels (> 600 V HV battery). Both power modules were comprehensively characterized, and high efficiency operation of the inverter was confirmed through analysis. Finally, a complete functional inverter was built with the 1200V power modules using other essential components (HV capacitors, gate driver board, controller board, current sensor, connectors etc.) and tested using GM’s standard test procedure. There are several challenges associated with adopting WBG devices for high voltage operation. In order to assess and mitigate those challenges, GM and subrecipients of this project have conducted multiple detailed studies. This includes phase current reconstruction using integrated Rogowski coil, device junction temperature estimation using on-state gate resistance, modeling and testing the effect of high voltage and fast switching on motor insulation and bearings, partial discharge inception voltage measurement under different environmental conditions. Findings of all these studies are summarized in this report.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Busbar Design and Optimization for Voltage Overshoot Mitigation of a Silicon Carbide High-Power Three-Phase T-Type Inverter

The silicon carbide (SiC) devices have faster switching speed than that of the conventional silicon (Si) devices, which however may cause excessive device voltage overshoot. Larger gate resistance can help to restrain the overshoot, it however slows down the switching speed and increases switching losses. There are other methods that can mitigate the voltage overshoot, e.g., using low-inductance busbars, adding snubber circuits, etc. In this article, the busbar design for a 250-kW SiC three-level T-type inverter is investigated. The current commutation loops (CCLs) are first analyzed using a single-phase equivalent circuit. Then the detailed busbar design methods, especially a 3-D busbar design concept, are proposed to select the optimal stacking order for the multilayer laminated busbar and to address constraints posed by the physical terminal arrangements of SiC modules and dc-link capacitors. The stray inductance in each CCL is extracted via a finite element analysis and validated on the actual inverter busbar prototypes using an impedance analyzer. To further minimize the busbar stray inductance, a hybrid busbar structure with printed circuit board based buffer circuit using high-frequency decoupling capacitors is designed and evaluated in this article. Lastly, the effectiveness of the designed busbars as well as the buffer circuit are validated using experimental studies.

42 ENGINEERING↗
DOE OSTI2024

Emerging continuous SiC fibers for high-temperature applications

Silicon carbide (SiC) fibers are responsible for the ultimate strength and toughness of SiC-fiber reinforced composites in harsh environments. The development of a new generation of continuous SiC fibers continues to advance the mechanical properties of composite materials. Tyranno™ SA4 fiber was recently released as a successor of Tyranno™ SA3 fiber. Laser-driven chemical vapor deposition (LCVD) has been adopted as an alternative fiber processing route to synthesizing high-strength SiC fiber with tailorable small diameters and chemical compositions. Both Tyranno™ SA4 and laser-driven CVD fibers show very high tensile strength, about 4 GPa in the as-fabricated condition. The degradation of thermal stability and strength due to annealing in an inert environment were similar for Tyranno™ SA3 and SA4 fibers because of their similar carbon-rich, crystalline microstructure. Silicon-rich fibers produced by LCVD possessed heterogeneous crystallinity, which was attributed to laser power distribution and showed microstructural instability at 1500 °C and above. Finally, the new SiC fibers demonstrated an increase in as-fabricated strength but faced the same challenges in environmental resistance as the traditional SiC fibers do.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A New Class of SiC Power MOSFETs with Record-Low Resistance

Silicon carbide (SiC) power transistors are used in the main traction inverter of electric vehicles (EVs). Tesla began installing SiC power MOSFETs in 2017, and has now produced 4.8 million EVs containing over 169 million SiC power MOSFETs. Looking ahead, the worldwide EV market is projected to exceed 50 million vehicles per year by 2030 (Reuters, Oct. 25, 2022). This will create a demand for over two billion SiC power MOSFETs per year. Our program aims to double the efficiency of today's commercial power MOSFETs. This will cut the number of MOSFETs per EV in half, reducing cost, simplifying assembly, decreasing weight, and increasing vehicle reliability through reduced parts count. Our approach is to apply innovative design and advanced processing to increase the density of current-controlling channels in SiC power MOSFET. We have developed two new MOSFET devices, each of which increases the channel density by a factor of six over today's best commercial MOSFETs. This required implementing new fabrication processes, creating new device designs, and integrating the processing steps and device designs into a manufacturable technology. In this project we have developed two innovative devices: (i) a novel three-dimensional structure, the "tri-gate MOSFET," and (ii) a deeply-scaled, fully self-aligned trench MOSFET, the "IMOSFET". Both products were experimentally demonstrated during this project and meet the program goals of increased efficiency relative to the current state-of-the art commercial products. In the process we have generated significant IP, with two US patents issued and three applications pending. We have also published three journal articles and given reports on this technology at seven international conferences. The success of this program has led to significant follow-on funding from industry. In May 2023 Purdue University signed a five-year R&D contract with GlobalFoundries to transfer our novel technology to commercial production. With headquarters in Malta, NY, Global Foundries is one of the largest pure-play silicon foundries in the world, with annual revenue of $\$$8.1B. Their SiC foundry will be built around the next-generation 200-mm diameter SiC wafers, which will double the number of die per wafer and reduce per-die production cost.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2020

Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.

42 ENGINEERING↗
DOE OSTI2023

Medium-Voltage Isolated Auxiliary Power Supply Design for High Insulation Capability, Ultra-Low Coupling Capacitance, and Small Size

To fully utilize the benefits of medium-voltage (MV) silicon carbide (SiC)-based converter and achieve high power density, the isolated auxiliary power supply (IAPS) needs to be as small as possible. However, the high insulation and low coupling capacitance requirements, considering the high voltage and high dv / dt , are constraints of size reduction. This article proposes an MV IAPS design for high insulation capability, ultra-low coupling capacitance, and small size. The topology selection, efficiency, load regulation, coupling capacitance, and size reduction considerations are discussed. A 2.5 W MV IAPS is designed and built for a 10 kV SiC mosfet -based 13.8 kV/100 kW three-phase converter, achieving a partial discharge (PD) inception voltage of higher than 15 kV rms, ultra-low coupling capacitance of 1.03 pF, and smaller size than that of the commercial products as well as the state-of-art research prototypes. Experimental results of PD test, 10 kV SiC mosfet -based half-bridge test, and 13.8 kV/100 kVA three-phase converter full rating test are conducted for design validation.

42 ENGINEERING↗
DOE OSTI2021

Properties of SiC-Si made via binder jet 3D printing of SiC powder, carbon addition, and silicon melt infiltration

In this work, we report the physical and mechanical properties of ceramic composite materials fabricated by binder jet 3D printing (BJ3DP) with silicon carbide (SiC) powders, followed by phenolic resin infiltration and pyrolysis (IP) to generate carbon, and a final reactive silicon melt infiltration step. After two phenolic resin infiltration and pyrolysis cycles; porosity was less than 2%, Young's modulus was close to 300 GPa, and the flexural strength was 517.6 ± 24.8 MPa. However, diminishing returns were obtained after more than two phenolic resin infiltration and pyrolysis cycles as surface pores in carbon were closed upon the formation of SiC, resulting in reaction choking and residual-free carbon and porosity. The instantaneous coefficient of thermal expansion of the composite was found to be independent of the number of phenolic IP cycles and had values of between 4.2 and 5.0 ppm/°C between 300 and 100°C, whereas the thermal conductivity was found to have a weak dependence on the number of phenolic IP cycles. While the manufacturing procedures described here yielded highly dense, gas impermeable, siliconized SiC composites with properties comparable to those of bulk siliconized silicon carbide processed according to conventional techniques, BJ3DP enables the manufacture of objects with complex shape, unlike conventional techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Determination of neutron irradiation temperatures of SiC using electrical resistivity method

The irradiation temperature of silicon carbide (SiC) was determined post-irradiation by examination of the recovery of the electrical resistivity due to thermal annealing in a rapid heating/cooling optical furnace. High-purity, high-resistivity grade SiC is routinely used as a passive temperature monitor in neutron irradiation studies at the High Flux Isotope Reactor (HFIR), and this paper presents an alternative automated technique for determination of the irradiation temperature the SiC experienced. Neutron collisions with the atoms results in displaced lattice atoms (interstitials) that act as electron donors yielding a significant decrease in electrical resistivity. The irradiation defects become thermodynamically unstable and start to recombine, when annealed above the irradiation temperature, resulting in a recovery of the electrical resistivity. The resistivity is measured at a fixed elevated temperature above ambient, which is below the target irradiation temperature. When the resistivity is plotted as a function of annealing temperatures, a clear increase is observed due to the recovery of irradiation defects. We have demonstrated that this electrical resistivity measurement of SiC is effective to determine irradiation temperature of SiC. In conclusion, energy levels of various defects in SiC were calculated from Arrhenius plots of electrical conductivity versus inverse temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2023

An Effective Current Balancing Method for Inverters With Paralleled Silicon Carbide Power Modules

Silicon carbide (SiC) MOSFET has many superior characteristics in high power applications. Paralleling the SiC devices is an effective approach to increase the current capacity of the system, which also leads to current sharing issues. In this article, both transient and steady-state current sharing issues are studied for the high-power grid-tied inverters with paralleled SiC modules with an effective current balancing strategy proposed to address both issues simultaneously. The steady-state imbalance current due to the parameter mismatch is suppressed by the self-inductance of power cables used for paralleling connection. With the elimination of steady-state imbalance current, the transient imbalance current sensing is much simplified and can be realized by using low-cost current sensors. With the sensed imbalance current, a closed-loop control approach is proposed to adjust the modulation reference signal for each module to mitigate the remaining transient imbalance current. Furthermore, the proposed method is straightforward to implement with enhanced compatibility and flexibility compared to existing methods. Experimental studies are performed using inverters with 2 and 4 power modules paralleled in each phase to demonstrate the effectiveness of the proposed method.

42 ENGINEERING↗
DOE OSTI2025

Investigating Grain Structure and Microcracking in SiCf-SiCm Composites Using 4D-STEM

Silicon carbide (SiC) fiber-reinforced SiC matrix composites (SiCf-SiCm) are promising materials for accident-tolerant fuel (ATF) cladding in light water reactors. This paper, using four-dimensional scanning transmission electron microscopy (4D-STEM), studied the microstructure of SiCf-SiCm at nanoscale and provided grain statistics at the CVI/fiber region. Here, the results reveal that CVI region mainly contain irregular sub-micron grains (115 nm to 1800 nm) with a preferred orientation, while the fiber region has nano equiaxed grains (21 nm to 78 nm) with random orientations. Centered dark field imaging over the fiber regions verified the grain size measurement by 4D-STEM. Through 4D-STEM virtual dark field imaging and orientation mapping, intragranular propagation was identified as the fracture mechanism for a microcrack observed within the CVI region. The amorphous pyrolytic carbon layer was also shown to effectively arrest the microcrack.

4D-STEM↗
DOE OSTI2026

Pitfalls in parameters: practical process development in chemical vapor processing of SiC

Vapor processing of high-value materials, such as silicon carbide (SiC), is of interest for many industries, including aerospace and energy production. Chemical vapor infiltration (CVI) of additively manufactured components is an especially attractive manufacturing process currently in development. Here, a novel development workflow is demonstrated with the H 2 –CH 3 SiCl 3 gas system for SiC to accelerate the process optimization of CVI SiC. A combination of calculated thermodynamics and high-throughput experimental chemical vapor deposition (CVD) coatings substantially reduced the experiments required with slow CVI processes. The computational results accurately predicted changes in the thermodynamic conditions tested, while CVD coatings – characterized by Raman spectroscopy – addressed changes in kinetic parameters. This workflow is also applicable to other vapor-processing systems, such as pyrolytic carbon, ZrC, or Si 3 N 4 .

Lamm, Benjamin W. [Oak Ridge National Laboratory (↗
DOE OSTI2025

Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001)

Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide (SiC) [Zhao, J. Nature 2024, 625 (7993), 60−65, 10.1038/s41586-023-06811-0] provided an important step toward integration of the graphene-based system into active components in postsilicon micro- and nanoelectronics. However, the exact atomic-scale structure and complex bonding configurations of the first epitaxial graphene carbon layer (C buffer ) remain an open problem. Our recent report [Kolmer, M. Communications Physics 2024, 7 (1), 16, 10.1038/s42005-023-01515-3] has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the C buffer –SiC bonds was observed. Here, using scanning tunneling microscopy and spectroscopy (STM and STS), we present direct evidence of silicon (Si) vacancies at the interface and provide their distribution at the topmost reconstructed SiC(0001) layer. Bias voltage and epitaxial graphene thickness-dependent characterization of the collective C buffer –SiC interface showed that “Si” vacancy sites beneath C buffer are stable under STM electric fields. Moreover, the vacancies introduce localized electronic states below the Fermi level, thereby enhancing the charge-transfer phenomenon across the interface.

Thupakula, Umamahesh [Ames Laboratory (AMES), Ames↗
DOE OSTI2020

Understanding the interface interaction between U3Si2 fuel and SiC cladding

Abstract Triuranium disilicide (U 3 Si 2 ) fuel with silicon carbide (SiC) composite cladding is being considered as an advanced concept/accident tolerant fuel for light water reactors thus, understanding their chemical compatibility under operational and accident conditions is paramount. Here we provide a comprehensive view of the interaction between U 3 Si 2 and SiC by utilizing density functional theory calculations supported by diffusion couple experiments. From the calculated reaction energies, we demonstrate that triuranium pentasilicide (U 3 Si 5 ), uranium carbide (UC), U 20 Si 16 C 3 , and uranium silicide (USi) phases can form at the interface. A detailed study of U 3 Si 2 and SiC defect formation energies of the equilibrated materials yielding the interfacial phases U 20 Si 16 C 3 , U 3 Si 5 and UC reveal a thermodynamic driving force for generating defects in both fuel and cladding. The absence of either the U 3 Si 2 or SiC phase, however, causes the defect formation energies in the other phase to be positive, removing the driving force for additional interfacial reactions. The diffusion couple experiments confirm the conclusion with demonstrated restricted formation of U 3 Si 5 , UC, and U 20 Si 16 C 3 /USi phases at the interface. The resulting lack of continuous interaction between the U 3 Si 2 and SiC, reflects the diminishing driving force for defect formation, demonstrating the substantial stability of this fuel-cladding system.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter

Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. Furthermore, the proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm.

42 ENGINEERING↗
DOE OSTI2024

Silicon-On-Silicon Carbide Platform for Integrated Photonics

Silicon carbide (SiC)'s nonlinear optical properties and applications to quantum information have recently brought attention to its potential as an integrated photonics platform. However, despite its many excellent material properties, such as large thermal conductivity, wide transparency window, and strong optical nonlinearities, it is generally a difficult material for microfabrication. Here, it is shown that directly bonded silicon-on-silicon carbide can be a high-performing hybrid photonics platform that does not require the need to form SiC membranes or directly pattern in SiC. The optimized bonding method yields defect-free, uniform films with minimal oxide at the silicon–silicon–carbide interface. Ring resonators are patterned into the silicon layer with standard, complimentary metal–oxide–semiconductor (CMOS) compatible (Si) fabrication and measure room-temperature, near-infrared quality factors exceeding 10 5 . The corresponding propagation loss is 5.7 dB cm -1 . The process offers a wafer-scalable pathway to the integration of SiC photonics into CMOS devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

SiC as a core-edge integrated wall solution in DIII-D

Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation. To assess SiC as a main wall material in DIII-D, simulations with TRIM.SP and DIVIMP are performed on a well-diagnosed L-mode discharge. The effective charge, Z eff , across the separatrix is used as a figure of merit in comparing SiC to the current graphite walls. It is found that SiC is expected to reduce Z eff , potentially by as much as ~50%. It is discussed how SiC may be expected to "self-condition" and create wall conditions similar to siliconization, further lowering Z eff due to efficient oxygen gettering. Furthermore, the potential benefits are reviewed and a path towards SiC walls in DIII-D is presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗