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34 records · Page 2

High-Performance Thermoelectric Semiconductors

Figures of merit almost double current state-of-art thermoelectric materials. IrSb3 is semiconductor found to exhibit exceptional thermoelectric properties. CoSb3 and RhSb3 have same skutterudite crystallographic structure as IrSb3, and exhibit exceptional transport properties expected to contribute to high thermoelectric performance. These three compounds form solid solutions. Combination of properties offers potential for development of new high-performance thermoelectric materials for more efficient thermoelectric power generators, coolers, and detectors.

Fleurial, Jean-Pierre↗

Skutterudite Compounds For Power Semiconductor Devices

New semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.

Fleurial, Jean-Pierre↗

Skutterudites: An Update

Materials with the skutterudite crystal structure possess attractive transport properties and have a good potential for achieving ZT values substantially larger than for state-of-the-art thermoelectric materials.

properties ternary compounds heavily Doped n-type ↗

Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques

Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

Fleurial, Jean-Pierre↗

High performance thermoelectric materials and methods of preparation

Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.), and low thermal conductivities (as low as 15 mW/cmK). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a two fold increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

Fleurial, Jean-Pierre↗

Skutterudites: An Update

Explore the source record for details and available documents.

skutterudite crystal structure ZT values p-type co↗

Filled Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) Skutterudites: Processing and Thermoelectric Properties

Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3 or CoAs3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) system has been investigated as both a p- and n-type thermoelectric material, and is stable up to 200 degrees Centigrade. Yb, Ce, and Dy fillers have been introduced into the skutterudite to study the influence of both the type and the quantity of fillers on processing conditions and thermoelectric properties. The system was processed through a multi-step technique that includes solidification, mechano-chemical alloying, and hot pressing which will be discussed along with thermoelectric transport properties.

Thermoelectricity↗

Filled Nd(sub z) Fe(sub x) Co(sub 4-x) Sb(sub 12-y) Ge(sub y) Skutterudites: Processing and Thermoelectric Properties

Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Nd (sub z) Fe (sub x) Co (sub 4-x) Sb (sub 12-y)Ge (sub y) system has been investigated as a p-type thermoelectric material, and is stable up to 600 degrees Centigrade. The influence of Fe and Ge content, along with filler Nd, was investigated on thermoelectric transport properties. In addition to the chemical influence on properties, some processing details of the system will also be addressed.

Electical Conductivity↗

Filled Nd(z)Fe(x)Co(4-x)Sb(12-y)Ge(y) Skutterudites: Processing and Thermoelectric Properties

Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Nd(z)Fe(x)Co(4-x)Sb(12-y)Ge(y) system has been investigated as a p-type thermoelectric material, and is stable up to 600 C. The influence of Fe and Ge content, along with filler Nd, was investigated on thermoelectric transport properties. In addition to the chemical influence on properties, some processing details of the system will also be addressed.

Thermoelectric↗

Co(x)Ni(4-x)Sb(12-y)Sn(y) Ternary Skutterudites: Processing and Thermoelectric Properties

Skutterudites have proven to be a useful thermoelectric system as a result of their high figure of merit, favorable mechanical properties, and good thermal stability. Binary skutterudites have received the majority of interest in recent years, as a result of successful double and triple filling schemes. Ternary skutterudites, such as Ni4Sb7Sn5, also demonstrate good thermoelectric performance, with high power factor and low thermal conductivity. Ternary skutterudites, as contrasted to binary systems, provide more possibility for tuning electronic structure as substitutions can be studied on three elements. The Co(x)Ni(4-x)Sb(12-y)Sn(y) system has been investigated as both a p- and n-type thermoelectric material, stable up to 200 C. The system is processed through a combination of solidification, mechanical alloying, and hot pressing steps. Rietveld structure refinement has revealed an interesting occupancy of Sn on both the 24g Wyckoff position with Sb as well as the 2a position as a rattler. In addition to thermoelectric properties, detailed processing routes have been investigated on the system.

Seebeck effect↗

Infrared spectra of some sulfides and their analogs of binary composition in the long-wave region

The far infrared spectra (500-60/cm) of some simple sulfides and their analogs were studied. In all, 22 minerals with different structure types were investigated, out of which 14 are sulfides (galena, alabandite, pyrrhotite, sphalerite, wurtzite, cinnabar, realgar, orpiment, getchelite antimonite, molybdenite, pyrite, marcasite and heazlewoodite) 6 arsenides (niccolite, domeykite, arsenopyrite, lollingite, rammelsbergite and skutterudite), one telluride (tetradymite) and native arsenic. The main bands of infrared absorption spectra of the minerals are compared with the relative strength of the interatomic bonds and their interpretation is given.

Povarennykh, A. S.↗

Progress Status of Skutterudite-Based Segmented Thermoelectric Technology Development

Young's modulus, bulk density, fracture strength, and fracture toughness of alpha silicon carbide manufactured by extrusion and by isopressing were measured at room and elevated temperature in order to determine material feasibility as augers for the Tile Overlay Repair attachment. The measured properties of extruded and isopressed materials differ significantly, with the extruded material exhibiting marked strength anisotropy and lower density. The measurements were made between July and September 2006 at Glenn Research Center (GRC), in order to obtain design data for use in structural and thermal mathematical models.

Seqmented Thermoelectric Technoloqy (STE)↗

Aerogels for Thermal Insulation of Thermoelectric Devices

Silica aerogels have been shown to be attractive for use as thermal-insulation materials for thermoelectric devices. It is desirable to thermally insulate the legs of thermoelectric devices to suppress lateral heat leaks that degrade thermal efficiency. Aerogels offer not only high thermal- insulation effectiveness, but also a combination of other properties that are especially advantageous in thermoelectric- device applications. Aerogels are synthesized by means of sol-gel chemistry, which is ideal for casting insulation into place. As the scale of the devices to be insulated decreases, the castability from liquid solutions becomes increasingly advantageous: By virtue of castability, aerogel insulation can be made to encapsulate devices having any size from macroscopic down to nanoscopic and possibly having complex, three-dimensional shapes. Castable aerogels can permeate voids having characteristic dimensions as small as nanometers. Hence, practically all the void space surrounding the legs of thermoelectric devices could be filled with aerogel insulation, making the insulation highly effective. Because aerogels have the lowest densities of any known solid materials, they would add very little mass to the encapsulated devices. The thermal-conductivity values of aerogels are among the lowest reported for any material, even after taking account of the contributions of convection and radiation (in addition to true thermal conduction) to overall effective thermal conductivities. Even in ambient air, the contribution of convection to effective overall thermal conductivity of an aerogel is extremely low because of the highly tortuous nature of the flow paths through the porous aerogel structure. For applications that involve operating temperatures high enough to give rise to significant amounts of infrared radiation, opacifiers could be added to aerogels to reduce the radiative contributions to overall effective thermal conductivities. One example of an opacifier is carbon black, which absorbs infrared radiation. Another example of an opacifier is micron- sized metal flakes, which reflect infrared radiation. Encapsulation in cast aerogel insulation also can help prolong the operational lifetimes of thermoelectric devices that must operate in vacuum and that contain SiGe or such advanced skutterudite thermoelectric materials as CoSb3 and CeFe3.5Co0.5Sb12. The primary cause of deterioration of most thermoelectric materials is thermal decomposition or sublimation (e.g., sublimation of Sb from CoSb3) at typical high operating temperatures. Aerogel present near the surface of CoSb3 can impede the outward transport of Sb vapor by establishing a highly localized, equilibrium Sb vapor atmosphere at the surface of the CoSb3.

Sakamoto, Jeffrey↗

Properties of Single Crystalline Semiconducting CoSb3

A study of the thermoelectric properties of the skutterudite compound CoSb3 was carried out on single crystals grown by the Bridgman gradient freeze technique. p- and n-type samples were obtained over a wide range of carrier concentration. Undoped As-grown crystals show p-type conductivity while n-type samples were obtained by addition of Te or Pd. Samples were characterized by x-ray diffractometry, electron microprobe analysis, and density measurements. The physical properties of CoSb3 such as linear thermal expansion coefficient, sound velocity, and Debye temperature were also determined and are presented. Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect measurements were performed between room temperature and about 900 K. Exceptionally high Hall mobilities were obtained on p-type samples with a maximum room-temperature Hall mobility of 3300 sq cm/V.s at a carrier concentration of 1 x 10(exp 17)/cc. The results of the transport property measurements are discussed and are in agreement with some recent predictions based on band structure calculations. The potential of CoSb3 for thermoelectric applications is evaluated.

Caillat, T.↗

A Novel High-Performance Mission-Enabling Multi-Purpose Radioisotope Heat Source

Recent studies indicate science mission concepts targeting access to the sub-surface oceans of icy moons require ice-penetrating cryobots powered by advanced Radioisotope Power Systems (RPS). These systems would deliver waste heat for ice-melting in the range of 10 kW. Minimizing the transit time through the kilometers-thick ice shells to just a few years requires these RPS to utilize heat sources having a higher thermal energy volumetric density than the existing flight-qualified General-Purpose Heat Source (GPHS). A Compact Heat Source (CPHS)has been conceptualized in which the graphite impact shells(GIS) of the existing GPHS are rearranged in a hexagonal aeroshell containing seven GIS per module, as opposed to the standard two per module; offering a thermal energy density of 0.57 W/cm3versus 0.29 W/cm3 offered by the GPHS simply from the repackaging of Technology Readiness Level (TRL)9 subassemblies. Preliminary thermal modeling of the CPHS integrated into a notional radioisotope thermoelectric generator(RTG) structure further suggests that centerline temperatures are well within allowable limits during nominal operation. Given the need for the CPHS for a subset of missions, it is worth exploring the applicability of the CPHS for more general RTG purposes. We discuss herein how the CPHS may be implemented with either heritage or in-development thermoelectric converter technologies into a Next-Generation RTG concept. Due to a higher energy density, the legacy heat rejection fin arrangement must be modified to permit a sufficiently low cold-side temperature. Preliminary finite element analysis suggests fin-root temperatures can be kept as low as 520 K while allowing the generator to fit within the usable dimensions of currently available United States Department of Energy shipping containers. Such temperatures would certainly be compatible with the use of high temperature thermoelectric converter technologies.. A prime candidate is the heritage silicon-germanium (SiGe) unicouple, whose design could be adapted by approximately halving the leg-length, but without changes in hot and cold junction interfaces, which are features critical to the proven performance and reliability of these devices. The estimated Beginning of Life power for a SiGe-based CPHS-RTG using 12 CPHS for a thermal inventory of 10.5 kW is greater than 600 W under deep space operating conditions. Using higher performance segmented couples currently in development that are based on skutterudite,La3−xTe4and 14-1-11 Zintl thermoelectric materials in lieu of the SiGe unicouples would increase the power level to more than1 kW. The high specific power (We/kg) attribute of CPHS-RTGs found in this study could potentially enable Radioisotope Electric Propulsion (REP) mission concepts. Past NASA REP mission concept studies identified specific power needs in excess of 6to 8 We/kg. Based on a GPHS-RTG-like system configuration, we show that at fin root temperatures between 530 K and 570K (deep space environment), specific powers exceeding 10 We/kg are achievable using high performance segmented thermoelectric converters. The compact sizing and power density of the CPHS-RTG would constitute a significant step upgrade in specific power when compared to heritage GPHS-RTG (approximately5.1 We/kg) and off-the-shelf Multi-Mission RTG (approximately 2.6 We/kg).

Nesmith, Bill J.↗