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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

A Fast-Response High-Accuracy Overvoltage Protection Circuit for Soft-Switching Current-Source Converters

Although voltage-source converters (VSCs) have been a focus of research for decades and are widely applied in numerous applications, they face great challenges in short-circuit failures, high dv/dt and electromagnetic interference (EMI), especially using wide bandgap devices. Instead, current-source converters (CSCs) are attracting increasing attention in recent years owing to their friendliness to short-circuit faults, improved EMI, etc. For CSCs, overvoltage is the most catastrophic failure since the semiconductor devices can hardly withstand an overvoltage for a short pulse. In this paper, a fast-response high-accuracy overvoltage protection (OVP) circuit is proposed to protect CSCs from overvoltage damage. It also features a small form factor, good noise-immunity, friendly retrofit capability, and no need for active switches. In this paper, the operating principle and design guideline of the proposed OVP circuit is introduced. Its effectiveness is validated in soft-switching solid-state transformer (S4T) at 500 V. In experiments, the voltage detection error of less than 5% and a propagation delay of fewer than 400 ns have been achieved.

30 DIRECT ENERGY CONVERSION↗
NASA NTRS1995

Trends in Device SEE Susceptibility from Heavy Ions

The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.

single event effects latchup radiation hardening↗
DOE OSTI2021

Relationship between the contact force strength and numerical inaccuracies in piecewise-smooth systems

This work studies the different types of behavior and inaccuracies that can occur when contact is not adequately accounted for in a dynamical system with freeplay, as the strength of the contact stiffness increases. The MATLAB® ode45 time integration solver, with the built-in Event Location capability, is first validated using past experimental data from a forced Duffing oscillator with freeplay. Next, numerical results utilizing event location are compared to results neglecting event location in order to highlight possible numerical errors and effects on multistable dynamical responses. Inaccuracies tend to occur in two different ways. First, neglecting event location can affect the boundaries between basins of attraction. Second, neglecting event location has little effect on the behaviors of the attractor solutions themselves besides merely resembling poorly converged solutions. Errors are less pronounced at the limits of soft or hard contact stiffness. Finally, this study shows the importance of accurately solving piecewise-smooth systems and the existing correlation between the strength of the contact force and possible numerical inaccuracies.

42 ENGINEERING↗
NASA NTRS1999

Modeling of polychromatic attenuation using computed tomography reconstructed images

This paper presents a procedure for estimating an accurate model of the CT imaging process including spectral effects. As raw projection data are typically unavailable to the end-user, we adopt a post-processing approach that utilizes the reconstructed images themselves. This approach includes errors from x-ray scatter and the nonidealities of the built-in soft tissue correction into the beam characteristics, which is crucial to beam hardening correction algorithms that are designed to be applied directly to CT reconstructed images. We formulate this approach as a quadratic programming problem and propose two different methods, dimension reduction and regularization, to overcome ill conditioning in the model. For the regularization method we use a statistical procedure, Cross Validation, to select the regularization parameter. We have constructed step-wedge phantoms to estimate the effective beam spectrum of a GE CT-I scanner. Using the derived spectrum, we computed the attenuation ratios for the wedge phantoms and found that the worst case modeling error is less than 3% of the corresponding attenuation ratio. We have also built two test (hybrid) phantoms to evaluate the effective spectrum. Based on these test phantoms, we have shown that the effective beam spectrum provides an accurate model for the CT imaging process. Last, we used a simple beam hardening correction experiment to demonstrate the effectiveness of the estimated beam profile for removing beam hardening artifacts. We hope that this estimation procedure will encourage more independent research on beam hardening corrections and will lead to the development of application-specific beam hardening correction algorithms.

NASA Discipline Musculoskeletal↗
NASA NTRS1983

Microcircuit radiation effects databank

Radiation test data submitted by many testers is collated to serve as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. Total dose damage information and single event upset cross sections, i.e., the probability of a soft error (bit flip) or of a hard error (latchup) are presented.

Source record↗
DOE OSTI2026

Development of combined function dipole-quadrupole PMQs magnets for NSLS-II upgrade

This paper focuses on the R&D performed for the development of permanent magnets-based dipoles-quadrupoles combined function magnets (PMQs) for the future NSLSII upgrade “complex bend” lattice (CB). This new lattice uses PMQs that provide both bending (dipole) and strong focusing (quadrupole) magnetic field on the electron beam. The permanent magnet (PM) technology is suitable for the high magnetic field strengths (0.5 T, 130 T/m) required for such combine function magnets. PM technology leads to a compact magnet design that is essential in realizing the complex bend lattice concept, as well as a passive magnet solution which does not require electrical power supply reducing power consumption by ~ 80% (from 1.7 MW to 0.3 MW for NSLS-II). Two PMQs magnets designs are under consideration: A hybrid design that use both PM and soft iron poles, and Halbach type that is a pure PM design. Both PMQs designs present challenges in achieving the specified magnetic field quality due to their higher sensitivity to errors (mechanical tolerances and PM properties). This paper presents cost-effective designs and prototypes results for hybrid and Halbach PMQs, addressing various technical challenges while meeting the field requirements of the complex bend lattice for the NSLS-II upgrade.

N'gotta, Patrick [Brookhaven]↗
DOE OSTI2022

HSC-XXL: Baryon budget of the 136 XXL groups and clusters

Abstract We present our determination of the baryon budget for an X-ray-selected XXL sample of 136 galaxy groups and clusters spanning nearly two orders of magnitude in mass (M500 ∼ 1013–1015 M⊙) and the redshift range 0 ≲ z ≲ 1. Our joint analysis is based on the combination of Hyper Suprime-Cam Subaru Strategic Program (HSC-SSP) weak-lensing mass measurements, XXL X-ray gas mass measurements, and HSC and Sloan Digital Sky Survey multiband photometry. We carry out a Bayesian analysis of multivariate mass-scaling relations of gas mass, galaxy stellar mass, stellar mass of brightest cluster galaxies (BCGs), and soft-band X-ray luminosity, by taking into account the intrinsic covariance between cluster properties, selection effect, weak-lensing mass calibration, and observational error covariance matrix. The mass-dependent slope of the gas mass–total mass (M500) relation is found to be $1.29_{-0.10}^{+0.16}$, which is steeper than the self-similar prediction of unity, whereas the slope of the stellar mass–total mass relation is shallower than unity; $0.85_{-0.09}^{+0.12}$. The BCG stellar mass weakly depends on cluster mass with a slope of $0.49_{-0.10}^{+0.11}$. The baryon, gas mass, and stellar mass fractions as a function of M500 agree with the results from numerical simulations and previous observations. We successfully constrain the full intrinsic covariance of the baryonic contents. The BCG stellar mass shows the larger intrinsic scatter at a given halo total mass, followed in order by stellar mass and gas mass. We find a significant positive intrinsic correlation coefficient between total (and satellite) stellar mass and BCG stellar mass and no evidence for intrinsic correlation between gas mass and stellar mass. All the baryonic components show no redshift evolution.

Akino, Daichi↗
NASA NTRS1974

Soft X-ray bremsstrahlung and fluorescent line production in the atmosphere by low energy electrons

The effect of low energy quasi-trapped or precipitating electrons which impact on the counter windows of soft X-ray detectors are discussed. The errors caused by X-rays produced in the residual atmosphere above a rocket-borne detector because of the resemblance to X-rays of cosmic origin are examined. The design and development of counter windows which make it possible to identify the atmospherically produced X-rays are described. Curves are presented to show the following: (1) preliminary low energy electron data from Atmospheric Explorer C, (2) X-ray flux in electron-excited nitrogen and oxygen, (3) typical proportional counter response to low energy cosmic rays, and (4) proportional counter response to X-radiation produced by electrons incident upon a gas of oxygen to nitrogen number of 0.4.

Kraushaar, W. L.↗
NASA NTRS1984

Fault-tolerant system considerations for a redundant strapdown inertial measurement unit

The development and evaluation of a fault-tolerant system for the Redundant Strapdown Inertial Measurement Unit (RSDIMU) being developed and evaluated by the NASA Langley Research Center was continued. The RSDIMU consists of four two-degree-of-freedom gyros and accelerometers mounted on the faces of a semi-octahedron which can be separated into two halves for damage protection. Compensated and uncompensated fault-tolerant system failure decision algorithms were compared. An algorithm to compensate for sensor noise effects in the fault-tolerant system thresholds was evaluated via simulation. The effects of sensor location and magnitude of the vehicle structural modes on system performance were assessed. A threshold generation algorithm, which incorporates noise compensation and filtered parity equation residuals for structural mode compensation, was evaluated. The effects of the fault-tolerant system on navigational accuracy were also considered. A sensor error parametric study was performed in an attempt to improve the soft failure detection capability without obtaining false alarms. Also examined was an FDI system strategy based on the pairwise comparison of sensor measurements. This strategy has the specific advantage of, in many instances, successfully detecting and isolating up to two simultaneously occurring failures.

Motyka, P.↗
NASA NTRS2017

Single Event Effect Testing of the Analog Devices ADV212

The Analog Devices ADV212 was initially tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in July of 2013. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI), soft data errors classified as single event upsets (SEU), and, of particular concern, single event latch-ups (SEL). All error types occurred so frequently as to make accurate measurements of the exposure time, and thus total particle fluence, challenging. To mitigate some of the risk posed by single event latch-ups, circuitry was added to the electrical design to detect a high current event and automatically recycle power and reboot the device. An additional heavy-ion test was scheduled to validate the operation of the recovery circuitry and the continuing functionality of the ADV212 after a substantial number of latch-up events. As a secondary goal, more precise data would be gathered by an improved test method, described in this test report.

single event latch-ups (SEL)↗
NASA NTRS2010

Scaled CMOS Technology Reliability Users Guide

The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. A methodology on how to accomplish this and techniques for deriving the expected product-level reliability on commercial memory products are provided.Competing mechanism theory and the multiple failure mechanism model are applied to the experimental results of scaled SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope (beta)=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and their key parameters.

Microelectronics Reliability↗
NASA NTRS1991

Multiple single event upsets in CMOS static rams

The occurrence of multiple upset errors during ground tests can contaminate the data and lead to error cross sections which are too high. In space, multiple errors may produce higher upsets than predicted and if they occur in single words they can defeat error detection and correction hardware. This investigation involves data which were taken during an experimental study of dose imprint effects in static memories. The results show that multiple errors occurred mainly for heavy ions with high linear energy transfers and with the majority of these in the soft upset sections of the dose-imprinted memory samples. The percentages of the total number of errors which were singles, doubles, and triplets, were determined as a function of LET, dose, and soft or hard section of the devices. The experimental observations are compared to the predictions of simple binomial statistics.

Stassinopoulos, E. G.↗
DOE OSTI2023

Soft error-mitigating semiconductor design system and associated methods

A soft error-mitigating semiconductor design system and associated methods that tailor circuit design steps to mitigate corruption of data in storage elements (e.g., flip flops) due to Single Events Effects (SEEs). Required storage elements are automatically mapped to triplicated redundant nodes controlled by a voting element that enforces majority-voting logic for fault-free output (i.e., Triple Modular Redundancy (TMR)). Storage elements are also optimally positioned for placement in keeping with SEE-tolerant spacing constraints. Additionally, clock delay insertion (employing either a single global clock or clock triplication) in the TMR specification may introduce useful skew that protects against glitch propagation through the designed device. The resultant layout generated from the TMR configuration may relax constraints imposed on register transfer level (RTL) engineers to make rad-hard designs, as automation introduces TMR storage registers, memory element spacing, and clock delay/triplication with minimal designer input.

Miryala, Sandeep↗
DOE OSTI2024

Soft error-mitigating semiconductor design system and associated methods

A soft error-mitigating semiconductor design system and associated methods that tailor circuit design steps to mitigate corruption of data in storage elements (e.g., flip flops) due to Single Events Effects (SEEs). Required storage elements are automatically mapped to triplicated redundant nodes controlled by a voting element that enforces majority-voting logic for fault-free output (i.e., Triple Modular Redundancy (TMR)). Storage elements are also optimally positioned for placement in keeping with SEE-tolerant spacing constraints. Additionally, clock delay insertion (employing either a single global clock or clock triplication) in the TMR specification may introduce useful skew that protects against glitch propagation through the designed device. The resultant layout generated from the TMR configuration may relax constraints imposed on register transfer level (RTL) engineers to make rad-hard designs, as automation introduces TMR storage registers, memory element spacing, and clock delay/triplication with minimal designer input.

Miryala, Sandeep↗
DOE OSTI2022

ASK: Adversarial Soft k-Nearest Neighbor Attack and Defense

K-Nearest Neighbor (kNN)-based deep learning methods have been applied to many applications due to their simplicity and geometric interpretability. However, the robustness of kNN-based deep classification models has not been thoroughly explored and kNN attack strategies are underdeveloped. In this paper, we first propose an Adversarial Soft kNN (ASK) loss for developing more effective kNN-based deep neural network attack strategies and designing better defense methods against them. Our ASK loss provides a differentiable surrogate of the expected kNN classification error. It is also interpretable as it preserves the mutual information between the perturbed input and the in-class-reference data. We use the ASK loss to design a novel attack method called the ASK-Attack (ASK-Atk), which shows superior attack efficiency and accuracy degradation relative to previous kNN attacks on hidden layers. We then derive an ASK-Defense (ASK-Def) method that optimizes the worst-case ASK training loss. Experiments on CIFAR-10 (ImageNet) show that (i) ASK-Atk achieves ≥13% (≥ 13% ) improvement in attack success rate over previous kNN attacks, and (ii) ASK-Def outperforms the conventional adversarial training method by ≥ 6.9% (≥ 3.5% ) in terms of robustness improvement. Relevant codes are available at https://github.com/wangren09/ASK .

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1998

Overview of Device SEE Susceptibility from Heavy Ions

A fifth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications (1,2,3,4) in December issues for 1985, 1987, 1989, and 1991. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are evaluated.

Nichols, D. K.↗
NASA NTRS1981

Annual Conference on Nuclear and Space Radiation Effects, 18th, University of Washington, Seattle, WA, July 21-24, 1981, Proceedings

Single event upset phenomena are discussed, taking into account cosmic ray induced errors in IIL microprocessors and logic devices, single event upsets in NMOS microprocessors, a prediction model for bipolar RAMs in a high energy ion/proton environment, the search for neutron-induced hard errors in VLSI structures, soft errors due to protons in the radiation belt, and the use of an ion microbeam to study single event upsets in microcircuits. Basic mechanisms in materials and devices are examined, giving attention to gamma induced noise in CCD's, the annealing of MOS capacitors, an analysis of photobleaching techniques for the radiation hardening of fiber optic data links, a hardened field insulator, the simulation of radiation damage in solids, and the manufacturing of radiation resistant optical fibers. Energy deposition and dosimetry is considered along with SGEMP/IEMP, radiation effects in devices, space radiation effects and spacecraft charging, EMP/SREMP, and aspects of fabrication, testing, and hardness assurance.

Tasca, D. M.↗