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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Total dose effect on soft error rate for dynamic metal-oxide-semiconductor memory cells

A simple model for the soft error rate for dynamic metal-oxide-semiconductor random access memories due to normal galactic radiation was devised and then used to calculate the rate of decrease of the single-event-upset rate with total radiation dose. The computation shows that the decrease in the soft error rate is less than 10 percent per day if the shielding is 0.5 g/sq cm and the spacecraft is in a geosynchronous orbit. The decrease is considerably less in a polar orbiting device.

Benumof, Reuben↗

Compiled Data On Single-Event Effects Caused By Heavy Ions

Report presents test data on susceptibility of new set of digital integrated circuits and other semiconductor products to single-event effects (soft errors and latchups) caused by heavy ions incident at high energies. Data used to develop generalizations for protecting electronic equipment from single-event effects. In some cases, tested parts selected as candidates for use in specific applications.

Nichols, Donald K.↗

Scaling and technology issues for soft error rates

Th effects of device technology and scaling on soft error rates are discussed, using information obtained from both the device and space communities as a guide to determine the net effect on soft errors.

soft error rate space radiation high-energy proton↗

Ground-Truth Prediction to Accelerate Soft-Error Impact Analysis for Iterative Methods

Understanding the impact of soft errors on applications can be expensive. Often, it requires an extensive error injection campaign involving numerous runs of the full application in the presence of errors. In this paper, we present a novel approach to arriving at the ground truth--the true impact of an error on the final output--for iterative methods by observing a small number of iterations to learn deviations between normal and error-impacted execution. We develop a machine learning based predictor for three iterative methods to generate ground-truth results without running them to completion for every error injected. We demonstrate that this approach achieves greater accuracy than alternative prediction strategies, including three existing soft error detection strategies. We demonstrate the effectiveness of the ground truth prediction model in evaluating vulnerability and the effectiveness of soft error detection strategies in the context of iterative methods.

iterative methods, failure prediction, Soft error ↗

Accelerated Nuclear Radiation Effects on the Raspberry Pi 3B+ and Pi 4

Raspberry Pi™ computers running Linux and embedded benchmarks are subjected to radiation testing in the neutron beam at LANSCE. The ARM® Cortex®-A53 in the Raspberry Pi 3B+ versus ARM® Cortex®-A72 in the Raspberry Pi 4, single-core versus multi-core, and small versus large array SBU cross sections are compared. Results for the A53 and the A72 are similar. The results of one process on one of four cores and four identical processes on four cores are presented. The results of the array size show that there is more going on than just an increase in size. Linux is helpful in relating some errors that would have been classified as SEFI to an upset in a single bit.

36 MATERIALS SCIENCE↗

Measured Energy-Dependent Neutron Attenuation Through the Stacked Printed Circuit Boards

Engineers often stack printed circuit boards (PCBs), populated with semiconductor devices, one behind the other in neutron beams to improve the error statistics in radiation-effects tests. As the neutron beam traverses through the boards, the neutron flux is both attenuated and the energy spectrum changes, which may have a significant impact on the results of such tests. In this work, we have developed a technique to measure the energy-dependent neutron attenuation due to the PCBs and to determine the energy-dependent effective cross section of neutron interactions with a single PCB. With this effective cross section, engineers can calculate the change in the neutron energy spectrum and the total neutron attenuation after any number of identical PCBs in the stack. This information will allow test engineers to partially correct inaccuracies in soft error tests.

42 ENGINEERING↗

Comments on the gamma-ray burst catalog of Mazets et al. /1981a/

A correlation has been discovered between the Venera spacecraft locations and the gamma-ray burst positions reported in the KONUS catalog (Mazets et al., 1981a). The reason for the correlation is not clear, but it could be due to spatial selection effects and/or large localization errors for weak or soft bursts. Whatever the cause, it seems likely that this systematic bias might significantly affect catalog results pertaining to gamma burst locations, intensity distributions, and spectra. For example, it can explain why the KONUS galactic latitude distribution is peaked significantly south of the galactic equator. Apparent discrepanices between the KONUS and Los Alamos gamma burst data bases are noted.

Laros, J. G.↗

Bipolar junction transistor models for circuit simulation of cosmic-ray-induced soft errors

This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.

Benumof, R.↗

Cosmic ray-induced soft errors in static MOS memory cells

Previous analytical models were extended to predict cosmic ray-induced soft error rates in static MOS memory devices. The effect is due to ionization and can be introduced by high energy, heavy ion components of the galactic environment. The results indicate that the sensitivity of memory cells is directly related to the density of the particular MOS technology which determines the node capacitance values. Hence, CMOS is less sensitive than e.g., PMOS. In addition, static MOS memory cells are less sensitive than dynamic ones due to differences in the mechanisms of storing bits. The flip-flop of a static cell is inherently stable against cosmic ray-induced bit flips. Predicted error rates on a CMOS RAM and a PMOS shift register are in general agreement with previous spacecraft flight data.

Sivo, L. L.↗

Update on parts SEE suspectibility from heavy ions

JPL and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given.

Nichols, D. K.↗

Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design

Alpha particles are known to be a major source of particles creating soft errors in semiconductor devices, such as content flipping in Static Random-Access Memory (SRAM). Recent advancements in transistor nodes have led to the introduction of Gate-All-Around Field Effect Transistors (GAA-FETs), which have better gate control, thus better electrostatics. Moreover, the introduction of bottom dielectric isolation (BDI) eliminates substrate leakage and thus is expected to enhance its radiation hardness. It is thus important to explore if one can design an SRAM that is completely radiation-hard to alpha particles. In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design an SRAM using GAA-FET technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LET max , for the alpha particle in Si and Si x Ge 1-x . Based on that, by de signing a sub-7nm GAA-FET-based SRAM with BDI, we show that the SRAM does not flip even if the particle strike is in the worst-case scenario for LET > LET max .

42 ENGINEERING↗

Proton Effects and Test Issues for Satellite Designers: Ionization Effects - Section 4

This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies. A crude, but nevertheless telling, indication of the level of concern for proton effects follows from surveying the themes treated in papers presented at this conference. The table lists themes found in the IEEE Transaction on Nuclear Science (TNS) December issue from the past year and compares them with the December issue's content a decade earlier. Ten years ago there were nine papers, or about 10% of the total, dealing with the four indicated topics. At that time, single event effects from protons were the primary concern, and these were thought to be possible only when a nuclear reaction initiated energetic recoil atoms. This is shown in the table as the 'traditional" SEE subject. A decade later, submissions addressing this topic had doubled, while papers devoted to displacement damage studies had increased from one to nine! More importantly, displacement damage effects in the natural space environments have become a concern for degradation in modern devices (other than solar cells), and this was not so ten years earlier.

Marshall, Paul W.↗

Space vehicle Viterbi decoder

The design and fabrication of an extremely low-power, constraint-length 7, rate 1/3 Viterbi decoder brassboard capable of operating at information rates of up to 100 kb/s is presented. The brassboard is partitioned to facilitate a later transition to an LSI version requiring even less power. The effect of soft-decision thresholds, path memory lengths, and output selection algorithms on the bit error rate is evaluated. A branch synchronization algorithm is compared with a more conventional approach. The implementation of the decoder and its test set (including all-digital noise source) are described along with the results of various system tests and evaluations. Results and recommendations are presented.

Source record↗

Real-time optimal guidance for orbital maneuvering.

A new formulation for soft-constraint trajectory optimization is presented as a real-time optimal feedback guidance method for multiburn orbital maneuvers. Control is always chosen to minimize burn time plus a quadratic penalty for end condition errors, weighted so that early in the mission (when controllability is greatest) terminal errors are held negligible. Eventually, as controllability diminishes, the method partially relaxes but effectively still compensates perturbations in whatever subspace remains controllable. Although the soft-constraint concept is well-known in optimal control, the present formulation is novel in addressing the loss of controllability inherent in multiple burn orbital maneuvers. Moreover the necessary conditions usually obtained from a Bolza formulation are modified in this case so that the fully hard constraint formulation is a numerically well behaved subcase. As a result convergence properties have been greatly improved.

Cohen, A. O.↗

1999 NSREC Short Course: Proton Effects and Test Issues for Satellite Designers: Displacement Effects

This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies.

Marshall, Cheryl J.↗

Single Event Effect Testing of the Micron MT46V128M8

The Micron MT46V128M8 was tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in June of 2017. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI) and possible soft data errors classified as single event upsets (SEU).

Single Event Functional Interrupts (SEFI)↗

A Fast-Response High-Accuracy Overvoltage Protection Circuit for Soft-Switching Current-Source Converters

Although voltage-source converters (VSCs) have been a focus of research for decades and are widely applied in numerous applications, they face great challenges in short-circuit failures, high dv/dt and electromagnetic interference (EMI), especially using wide bandgap devices. Instead, current-source converters (CSCs) are attracting increasing attention in recent years owing to their friendliness to short-circuit faults, improved EMI, etc. For CSCs, overvoltage is the most catastrophic failure since the semiconductor devices can hardly withstand an overvoltage for a short pulse. In this paper, a fast-response high-accuracy overvoltage protection (OVP) circuit is proposed to protect CSCs from overvoltage damage. It also features a small form factor, good noise-immunity, friendly retrofit capability, and no need for active switches. In this paper, the operating principle and design guideline of the proposed OVP circuit is introduced. Its effectiveness is validated in soft-switching solid-state transformer (S4T) at 500 V. In experiments, the voltage detection error of less than 5% and a propagation delay of fewer than 400 ns have been achieved.

30 DIRECT ENERGY CONVERSION↗

Trends in Device SEE Susceptibility from Heavy Ions

The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.

single event effects latchup radiation hardening↗